Proposal for Graphene-Boron Nitride Heterobilayer-Based Tunnel FET
Data(s) |
2013
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Resumo |
We investigate the gate-controlled direct band-to-band tunneling (BTBT) current in a graphene-boron nitride (G-BN) heterobilayer channel-based tunnel field effect transistor. We first study the imaginary band structure of hexagonal and Bernal-stacked heterobilayers by density functional theory, which is then used to evaluate the gate-controlled current under the Wentzel-Kramers-Brillouin approximation. It is shown that the direct BTBT is probable for a certain interlayer spacing of the G-BN which depends on the stacking orders. |
Formato |
application/pdf |
Identificador |
http://eprints.iisc.ernet.in/47579/1/IEEE_Tran_Nano_12-5__665_2013.pdf Ghosh, Ram Krishna and Mahapatra, Santanu (2013) Proposal for Graphene-Boron Nitride Heterobilayer-Based Tunnel FET. In: IEEE TRANSACTIONS ON NANOTECHNOLOGY, 12 (5). pp. 665-667. |
Publicador |
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC |
Relação |
http://dx.doi.org/10.1109/TNANO.2013.2272739 http://eprints.iisc.ernet.in/47579/ |
Palavras-Chave | #Electronic Systems Engineering (Formerly, (CEDT) Centre for Electronic Design & Technology) |
Tipo |
Journal Article PeerReviewed |