Analysis and Design of Class-E3F and Transmission-Line Class-E3F2 Power Amplifiers

In this paper, analysis and synthesis approach for two new variants within the Class-EF power amplifier (PA) family is elaborated. These amplifiers are classified here as Class-E3 F2 and transmission-line (TL) Class-E3 F 2. The proposed circuits offer means to alleviate some of the major issues faced by existing topologies such as substantial power losses due to the parasitic resistance of the large inductor in the Class-EF load network and deviation from ideal Class-EF operation due to the effect of device output inductance at high frequencies. Both lumped-element and transmission-line load networks for the Class-E 3 F PA are described. The load networks of the Class-E3 F and TL Class-E 3 F2amplifier topologies developed in this paper simultaneously satisfy the Class-EF optimum impedance requirements at fundamental frequency, second, and third harmonics as well as simultaneously providing matching to the circuit optimum load resistance for any prescribed system load resistance. Optimum circuit component values are analytically derived and validated by harmonic balance simulations. Trade-offs between circuit figures of merit and component values with some practical limitations being considered are discussed. © 2010 IEEE.

PRELIMINARY STUDIES OF RADIATION COUPLING BETWEEN REMOTE SOFT-X-RAY LASER-AMPLIFIERS

Coupling of a soft X-ray laser beam with a relaying concave mirror in a sequentially pumped amplifier geometry using the Ne-like Ge system has been studied experimentally. Preliminary observations indicate an increase in the spatial coherence of the amplified relayed beam. In addition, near-field imaging of one of the amplifier plasmas shows a double-lobed intensity pattern of the emergent beam indicating refractive guiding of the amplified beam with components both normal and tangential to the target surface.

Holistic design of 8-way combining transformers in SiGe technology for use in millimetre-wave power amplifiers

This paper presents the design of a novel 8-way power-combining transformer for use in mm-wave power amplifier (PA). The combiner exhibits a record low insertion loss of 1.25 dB at 83.5 GHz. A complete circuit comprised of a power splitter, two-stage cascode PA array, a power combiner and input/output matching elements was designed and realized in SiGe technology. Measured gain of at least 16.8 dB was obtained from 76.4 GHz to 85.3 GHz with a peak 19.5 dB at 83 GHz. The prototype delivered 12.5 dBm OP and 14 dBm saturated output power when operated from a 3.2 V DC supply voltage at 78 GHz. © 2013 IEEE.

High-Efficiency Harmonic-Peaking Class-EF Power Amplifiers with Enhanced Maximum Operating Frequency

The recently introduced Class-EF power amplifier (PA) has a peak switch voltage lower than that of the Class-E PA. However, the value of the transistor output capacitance at high frequencies is typically larger than the required Class-EF optimum shunt capacitance. Consequently, soft-switching operation that minimizes power dissipation during off-to-on transition cannot be achieved at high frequencies. Two new Class-EF PA variants with transmission-line load networks, namely, third-harmonic-peaking (THP) and fifth-harmonic-peaking (FHP) Class-EF PAs are proposed in this paper. These permit operation at higher frequencies at no expense to other PA figures of merit. Analytical expressions are derived in order to obtain circuit component values, which satisfy the required Class-EF impedances at fundamental frequency, all even harmonics, and the first few odd harmonics as well as simultaneously providing impedance matching to a 50- Ω load. Furthermore, a novel open-circuit and shorted stub arrangement, which has substantial practical benefits, is proposed to replace the normal quarter-wave line connected at the transistor's drain. Using GaN HEMTs, two PA prototypes were built. Measured peak drain efficiency of 91% and output power of 39.5 dBm were obtained at 2.22 GHz for the THP Class-EF PA. The FHP Class-EF PA delivered output power of 41.9 dBm with 85% drain efficiency at 1.52 GHz.

Performance Limits of MIMO Systems with Nonlinear Power Amplifiers

The development of 5G enabling technologies brings new challenges to the design of power amplifiers (PAs). In particular, there is a strong demand for low-cost, nonlinear PAs which, however, introduce nonlinear distortions. On the other hand, contemporary expensive PAs show great power efficiency in their nonlinear region. Inspired by this trade-off between nonlinearity distortions and efficiency, finding an optimal operating point is highly desirable. Hence, it is first necessary to fully understand how and how much the performance of multiple-input multiple-output (MIMO) systems deteriorates with PA nonlinearities. In this paper, we first reduce the ergodic achievable rate (EAR) optimization from a power allocation to a power control problem with only one optimization variable, i.e. total input power. Then, we develop a closed-form expression for the EAR, where this variable is fixed. Since this expression is intractable for further analysis, two simple lower bounds and one upper bound are proposed. These bounds enable us to find the best input power and approach the channel capacity. Finally, our simulation results evaluate the EAR of MIMO channels in the presence of nonlinearities. An important observation is that the MIMO performance can be significantly degraded if we utilize the whole power budget.

All-optical processing systems based on semiconductor optical amplifiers

Nesta tese investigam-se e desenvolvem-se dispositivos para processamento integralmente óptico em redes com multiplexagem densa por divisão no comprimento de onda (DWDM). O principal objectivo das redes DWDM é transportar e distribuir um espectro óptico densamente multiplexado com sinais de débito binário ultra elevado, ao longo de centenas ou milhares de quilómetros de fibra óptica. Estes sinais devem ser transportados e encaminhados no domínio óptico de forma transparente, sem conversões óptico-eléctrico-ópticas (OEO), evitando as suas limitações e custos. A tecnologia baseada em amplificadores ópticos de semicondutor (SOA) é promissora graças aos seus efeitos não-lineares ultra-rápidos e eficientes, ao potencial para integração, reduzido consumo de potência e custos. Conversores de comprimento de onda são o elemento óptico básico para aumentar a capacidade da rede e evitar o bloqueio de comprimentos de onda. Neste trabalho, são estudados e analisados experimentalmente métodos para aumentar a largura de banda operacional de conversores de modulação cruzada de ganho (XGM), a fim de permitir a operação do SOA para além das suas limitações físicas. Conversão de um comprimento de onda, e conversão simultânea de múltiplos comprimentos de onda são testadas, usando interferómetros de Mach-Zehnder com SOA. As redes DWDM de alto débito binário requerem formatos de modulação optimizados, com elevada tolerância aos efeitos nefastos da fibra, e reduzida ocupação espectral. Para esse efeito, é vital desenvolver conversores integramente ópticos de formatos de modulação, a fim de permitir a interligação entre as redes já instaladas, que operam com modulação de intensidade, e as redes modernas, que utilizam formatos de modulação avançados. No âmbito deste trabalho é proposto um conversor integralmente óptico de formato entre modulação óptica de banda lateral dupla e modulação óptica de banda lateral residual; este é caracterizado através de simulação e experimentalmente. Adicionalmente, é proposto um conversor para formato de portadora suprimida, através de XGM e modulação cruzada de fase. A interligação entre as redes de transporte com débito binário ultra-elevado e as redes de acesso com débito binário reduzido requer conversão óptica de formato de impulso entre retorno-a-zero (RZ) e não-RZ. São aqui propostas e investigadas duas estruturas distintas: uma baseada em filtragem desalinhada do sinal convertido por XGM; uma segunda utiliza as dinâmicas do laser interno de um SOA com ganho limitado (GC-SOA). Regeneração integralmente óptica é essencial para reduzir os custos das redes. Dois esquemas distintos são utilizados para regeneração: uma estrutura baseada em MZI-SOA, e um método no qual o laser interno de um GC-SOA é modulado com o sinal distorcido a regenerar. A maioria dos esquemas referidos é testada experimentalmente a 40 Gb/s, com potencial para aplicação a débitos binários superiores, demonstrado que os SOA são uma tecnologia basilar para as redes ópticas do futuro.

A Wiener model for memory high power amplifiers using B-spline function approximation

In this paper we introduce a new Wiener system modeling approach for memory high power amplifiers in communication systems using observational input/output data. By assuming that the nonlinearity in the Wiener model is mainly dependent on the input signal amplitude, the complex valued nonlinear static function is represented by two real valued B-spline curves, one for the amplitude distortion and another for the phase shift, respectively. The Gauss-Newton algorithm is applied for the parameter estimation, which incorporates the De Boor algorithm, including both the B-spline curve and the first order derivatives recursion. An illustrative example is utilized to demonstrate the efficacy of the proposed approach.

Tm and Tm-Tb-doped germanate glasses for S-band amplifiers

The mechanism involved in the Tm(3+)((3)F(4)) -> Tb(3+)((7)F(0,1,2)) energy transfer as a function of the Tb concentration was investigated in Tm:Tb-doped germanate (GLKZ) glass. The experimental transfer rate was determined from the best fit of the (3)F(4) luminescence decay due to the Tm -> Tb energy transfer using the Burshtein model. The result showed that the 1700 nm emission from (3)F(4) can be completely quenched by 0.8 mol% of Tb(3+). As a consequence, the (7)F(3) state of Tb(3+) interacts with the (3)H(4) upper excited state of TM(3+) slighting decreasing its population. The effective amplification coefficient beta(cm(-1)) that depends on the population density difference Delta n = n((3)H(4))-n((3)F(4)) involved in the optical transition of Tm(3+) (S-band) was calculated by solving the rate equations of the system for continuous pumping with laser at 792 nm, using the Runge-Kutta numerical method including terms of fourth order. The population density inversion An as a function of Tb(3+) concentration was calculated by computational simulation for three pumping intensities, 0.2, 2.2 and 4.4 kWcm(-2). These calculations were performed using the experimental Tm -> Tb transfer rates and the optical constants of the Tm (0.1 mol%) system. It was demonstrated that 0.2 mol% of Tb(3+) propitiates best population density inversion of Tin(3+) maximizing the amplification coefficient of Tm-doped (0.1 mol%) GLKZ glass when operating as laser intensity amplification at 1.47 mu m. (C) 2007 Elsevier B.V. All rights reserved.

Tm3+ and Tm3+-Ho3+ doped fluorogermanate glasses for S-band amplifiers

Two series of glasses with composition (mol%) 70PbGeO3- 15PbF2-15CdF2, the first one with different Tm 3+ contents (0.2, 0.4, 0.6 and 0.8 mol%) and the second one with 0.2 mol% Tm3+ and different Ho3+ contents (0.1, 0.5, 1.0 and 1.5 mol%), have been prepared and some of their spectroscopic properties studied. Absorption in the visible-near infrared and emission in the near infrared region of the electromagnetic spectrum have been obtained. Concerning emission at the 1.4-1.5 μm region, optimization of rare earth ions content leads to 0.2 and 0.5 mol% for Tm3+ and Ho3+, respectively. We discuss potential application of these compositions. © 2005 Elsevier B.V. All rights reserved.

Effects in the population inversion of3H4 level in Tm, Tm-Tb and Tm-Eu doped germanate glasses for amplifiers applications

The population inversion of the Tm3+ in GLKZ glass involved in the 1470 nm emission (3H4 → 3F 4) as a function of Tb (or Eu) concentration was calculated by computational simulation for a CW laser pumping at 792 nm. These calculations were performed using the experimental Tm→Tb an Tm→Eu transfer rates and the spectroscopic parameters of the Tm (0.1 mol %) system. The result shows that 0.2 mol % (Tb3+) and 0.4 mol % of Eu3+ ions propitiate best population inversion of Tm3+ (0.1 mol %) maximizing the amplification coefficient of germanate (GLKZ) glass when operating as laser intensity amplification at 1470 nm. Besides the effective deactivation of the 3F4 level, the presence of Tb3+ or Eu 3+ ions introduce a depopulation of the 3H4 emitting level by means of a cross relaxation process with Tm3+ ions. In spite of this, the whole effect is verified to be benefic for using Tm-doped GLKZ glass codoped with Tb3+ or Eu3+ as a suitable material for confectioning optical amplifiers that operates in the S-band for telecommunication.

Fabrication of Yb3+/Er3+ codoped Bi2O3-WO3-TeO2 pedestal type waveguide for optical amplifiers

We report, for the first time to our knowledge, experimental results on pedestal waveguides produced with Yb3+/Er3+ codoped Bi2O3-WO3-TeO2 thin films deposited by RF Sputtering for photonic applications. Thin films were deposited using Ar/O-2 plasma at 5 mTorr pressure and RF power of 40 W on substrates of silicon wafers. The definition of the pedestal waveguide structure was made using conventional optical lithography followed by plasma etching. Propagation losses around 2.0 dB/cm and 2.5 dB/cm were obtained at 633 and 1050 nm, respectively, for waveguides in the 20-100 mu m width range. Single-mode propagation was measured for waveguides width up to 10 mu m and 12 mu m, at 633 nm and 1050 nm, respectively; for larger waveguides widths multi-mode propagation was obtained. Internal gain of 5.6 dB at 1530 nm, under 980 nm excitation, was measured for 1.5 cm waveguide length (similar to 3.7 dB/cm). The present results show the possibility of using Yb3+/Er3+ codoped Bi2O3-WO3-TeO2 pedestal waveguide for optical amplifiers. (C) 2014 Elsevier B.V. All rights reserved.

Bromeliads as biodiversity amplifiers and habitat segregation of spider communities in a Neotropical rainforest

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Minimizing the Number of Optical Amplifiers Needed to Support a Multi-Wavelength Optical LAN/MAN

Optical networks based on passive star couplers and employing wavelength-division multiplexing (WDhf) have been proposed for deployment in local and metropolitan areas. Amplifiers are required in such networks to compensate for the power losses due to splitting and attenuation. However, an optical amplifier has constraints on the maximum gain and the maximum output power it can supply; thus optical amplifier placement becomes a challenging problem. The general problem of minimizing the total amplifier count, subject to the device constraints, is a mixed-integer non-linear problem. Previous studies have attacked the amplifier placement problem by adding the “artificial” constraint that all wavelengths, which are present at a particular point in a fiber, be at the same power level. In this paper, we present a method to solve the minimum amplifier- placement problem while avoiding the equally powered- wavelength constraint. We demonstrate that, by allowing signals to operate at different power levels, our method can reduce the number of amplifiers required in several small to medium-sized networks.