不同防冻剂对兔胚胎干细胞慢速冷冻保存的影响

干细胞冷冻保存是干细胞研究和临床应用中的必需技术.为提高兔胚胎干细胞在慢速冻存过程中的保存效果,比较了二甲基亚砜(DMSO)和乙二醇(ethylene glycol,EG)对兔胚胎干细胞冷冻保护效果.对冷冻复苏后的细胞进行台盼蓝染色,并研究其胚胎干细胞分子特性,结果表明DMSO比EG具有更好的冷冻保护效果.再在以10% DMSO为基础的防冻液中添加膜稳定剂海藻糖(trehalose)或谷氨酰胺(glutamine),细胞冷冻复苏后结果显示,谷氨酰胺对兔胚胎干细胞有明显的冷冻保护作用,使细胞存活率从71%提高到83.7%.当谷氨酰胺浓度为0、5、10、20、40 mmol/L分别加入防冻液中后,20 mmol/L的谷氨酰胺具有最佳的冷冻保护效果.以上结果得出兔胚胎干细胞慢速冷冻的防冻液改进配方为:在胚胎干细胞培养液中添加10% DMSO+20 mmol/L谷氨酰胺.

The application of in vitro sperm competition test to evaluate the impact of ZP-derived peptides on fertilization capacity of cat sperm

The present study aimed to establish a sensitive in vitro assay to assess the binding capacity of cat spermatozoa. Cat oocytes and epididymal sperm cells were isolated from gonads and cultured for in vitro fertilization. Before fertilization, the sperm ce

Influence of a building's integrated-photovoltaics on heating and cooling loads

Building integrated photovoltaics (BIPV) has the potential to become a major source of renewable energy in the urban environment. BIPV has significant influence on the heat transfer through the building envelope because of the change of the thermal resistance by adding or replacing the building elements. Four different roofs are used to assess the impacts of BIPV on the building's heating-and-cooling loads; namely ventilated air-gap BIPV, non-ventilated (closed) air-gap BIPV, closeroof mounted BIPV, and the conventional roof with no PV and no air gap. One-dimensional transient models of four cases are derived to evaluate the PV performances and building cooling-and-heating loads across the different roofs in order to select the appropriate PV building integration method in Tianjin, China. The simulation results show that the PV roof with ventilated air-gap is suitable for the application in summer because this integration leads to the low cooling load and high PV conversion efficiency. The PV roof with ventilation air-gap has a high time lag and small decrement factor in comparison with other three roofs and has the same heat gain as the cool roof of absorptance 0.4. In winter, BIPV of non-ventilated air gap is more appropriate due to the combination of the low heating-load through the PV roof and high PV electrical output. © 2005 Elsevier Ltd. All rights reserved.

Study of GaN growth on ultra-thin Si membranes

10 mu m-thick ultra-thin Si (111) membranes for GaN epi-layers growth were successfully fabricated on silicon-on-insulator (SOI) substrate by backside etching the handle Si and buried oxide (BOX) layer. Then 1 mu m-thick GaN layers were deposited on these Si membranes by metal-organic chemical vapor deposition (MOCVD). The crack-free areas of 250 mu m, x 250 mu m were obtained on the GaN layers due to the reduction of thermal stress by using these ultra-thin Si membranes, which was further confirmed by the photoluminescence (PL) spectra and the simulation results from the finite element method calculation by using the software of ANSYS. In this paper, a newly developed approach was demonstrated to utilize micromechanical structures for GaN growth, which would improve the material quality of the epi-layers and facilitate GaN-based micro electro-mechanical system (MEMS) fabrication, especially the pressure sensor, in the future applications. (C) 2008 Elsevier Ltd. All rights reserved.

Photoluminescence and capacitance transients in highly Mg-doped GaN

Behaviors of the photoluminescence blue-band and near-bandgap peak and the relevant thermal ionization energies of the shallow and deep Mg-related acceptors have been studied, respectively. The 2.989 eV blue-band is attributed to the deep donor-acceptor-pair transitions involving a deep Mg-related acceptor at E-v+0.427 eV. The blueshift with increasing excitation power is explained by variation in the contribution of close and distant donor-acceptor-pairs to the luminescence. The redshift with increasing temperature results from thermal release of carriers from close donor-acceptor-pairs. The 3.26 eV near-bandgap peak is attributed to the shallow donor-acceptor-pair transitions involving a shallow Mg-related acceptor at E-v+0.223 eV. The relevant thermal ionization energies of the shallow and deep Mg-related acceptors, being about E-v+0.16 and E-v+0.50eV, are determined from deep-level transient Fourier spectroscopy measurements.

A two-step backoff scheme for improving the performance of the IEEE 802.11 distributed coordination function

This paper describes the binary exponential backoff mechanism of 802.11 distributed coordination function (DCF), and introduces some methods of modifying the backoff scheme. Then a novel backoff scheme, called Two-step Backoff scheme, is presented and illustrated. The simulation process in OPNET environment has been described also. At last, the analysis and simulation results show that the Two-step backoff scheme can enhance the performance of the IEEE 802.11 DCF.

太阳模拟器的热辐射修正

本文讨论了平板集热器室内试验的修正问题，并提出了修正公式。经过修正的室内试验结果同室外试验较好地相符，表明修正的模式是可取的。

ELECTRON-STATES OF A STACKING-FAULT RIBBON IN SILICON

The electronic structure of a bounded intrinsic stacking fault in silicon is calculated. The method used is an LCAO-scheme (Linear Combinations of Atomic Orbitals) taking ten atomic orbitals of s-, p-, and d-type into account. The levels in the band gap are extracted using Lanczos' algorithm and a continued fraction representation of the local density of states. We find occupied states located up to 0.3 eV above the valence band maximum (E(v)). This significantly differs from the result obtained for the ideal infinite fault for which the interface state is located at E(v)+ 0.1 eV.

与标准集成电路工艺兼容的硅基光学器件研究

着重介绍了与标准集成电路工艺兼容的硅基光学器件的最新研究进展,包括硅基光发射器、硅基光波导和调制器件、硅基光电探测器和接收机以及硅基光电子集成回路的工作原理、制作工艺和集成技术.与标准集成电路工艺兼容的硅基光电子集成回路能有效地解决电互连芯片内部串扰、带宽和能耗等问题,并能够充分利用现有成熟的集成电路工艺,实现大规模生产,具有广阔的实用前景.

界面态对AlGaAs/GaAs HEMT直流输出特性的影响

利用高电子迁移率晶体管(HEMT)的直流输出分析模型，首次定量地分析了界面态对AlGaAs/GaAs HEMT直流输出特性的影响。考虑界面态的作用，详细分析了不同界面态密度对HEMT的I-V特性和器件跨导的影响。研究结果表明随着界面态密度的增加，栅极电压对电流的控制能力减小，从而使器件的跨导减小。