90° domain dynamics and relaxation in thin ferroelectric/ferroelastic films

We investigated the dynamics and relaxation of 90° domains in 60-nm-thick lead-zirconium titanate (PbZr0.3 T0.7 O3) films, with enhanced piezoresponse force microscopy. We show that under opposite electric fie ld, ferroelectric domains are reversibly switched while ferroelastic domains reorganize in a nonreversible way. Moreover, we show that the relaxation-time constant of 90° domains is two orders of magnitude shorter than for the previously reported 180° domains relaxation. Furthermore, we demonstrate the influence of geometry and scale on the relaxation process. Finally, we propose a relaxation mechanism for ferroelastic-ferroelectric systems, with implications for devices based on these materials. © 2010 The American Physical Society.

Multimode 90°-crossings, combiners and splitters for a polymer-based on-board optical bus

The design and characterization of polymer-based multimode 90°-crossings, combiners and splitters exhibiting excess losses below 0.1 dB/crossing, 2 dB and 3 dB respectively are reported. The devices enable the realization of an on-board optical bus. © 2012 OSA.

~(90)锶对鲫鱼胚胎发育的影响及鲫仔鱼对~(90)锶吸收积累的研究

在胚胎发育过程中,用不同比放射性的~(90)锶试液处理受精卵,各处理组都有畸形和死亡现象。畸形的高峰一般出现在囊胚期和晶体形成期,畸形的类型一般为脊椎弯曲、体短、胸腔和卵黄囊扩大,头和眼畸形。随后即出现死亡高峰。例如:游动期的死亡率分别是:21%(对照);36%(5×10~(-11)居里/升);40%(5×1-~(-10)居里/升);45%(5×10~(-9)居里/升)。鲫仔鱼对~(90)锶吸收积累的结果表明:鲫仔鱼体中比放射性大小与试液的比放射性大小成正比,并随试验吋间的延长,生物量的增加而增加,鲫仔鱼

利用水生植物清除水体中放射性物质的研究 (Ⅲ)水生植物对Sr~(90)、Y~(91)、Cs~(137)、Ce~(144)的积累、释放及Ca对Sr~(90)吸收的影响

5种水生植物对所用4种放射性同位素都有一定的清除能力,其清除能力的大小不仅取决于生物的种类,而且还取决于生物本身代谢率的高低。试验结果:去污率高的可达80%,积累系数最高可达1,500;水体中含Ca量的多少对生物吸收积累放射性物质的多少有一定的影响;生物在积累放射性物质之后,转移到无放射性物质的水体中将释放出原积累的一部分放射性物质。

利用水生植物清除水体中放射性物质的研究(Ⅰ)——水生植物对Sr~(90)的吸收积累和清除能力

<正> 原子能和平利用事业的广泛开展,水体中容易受到放射性物貭的沾染,尤其是核武器的試驗,使水体中的放射性本底逐漸增高。如何清除水体中放射性物貭沾染,是一个必需解决的重要問题。水生植物对放射性物貭具有吸收和积累的能力,在許多文献中已有报导。为了利用水生植物的这个特性来清除水体中放射性沾染,我們对九种水生植物进行了試驗。

Multimode 90°-crossings, combiners and splitters for a polymer-based on-board optical bus

The design and characterization of polymer-based multimode 90°-crossings, combinersand splitters exhibiting excess losses below 0.1 dB/crossing, 2 dB and 3 dB respectively arereported. The devices enable the realization of an on-board optical bus. © OSA 2012.

Growing 20 cm Long DWNTs/TWNTs at a Rapid Growth Rate of 80-90 mu m/s

Submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-04-13T16:03:37Z No. of bitstreams: 1 Growing 20 cm Long DWNTsTWNTs at a Rapid Growth Rate of 80-90 mu ms .pdf: 3229914 bytes, checksum: 0259795afb443dc6901c11df5ecd325a (MD5)

INFLUENCE OF THE 90-DEGREES PARTIAL DISLOCATION CORE STRUCTURE IN SILICON ON ENERGY-LEVELS

An LCAO-scheme taking into account 10 atomic orbitals (s-, p-, and d-type) is used to calculate the electronic structure of the reconstructed 90-degrees partial dislocation in Si. Two different valence force fields producing deviating results are used for modelling the core structure. Geometrical data published by another group is also used. The aim is to explore the influence of geometry on energy levels. We find that the band structure depends sensitively on bond angles. Using data determined by the Tersoff potential we obtain two bands of which the upper one penetrates deeply into the indirect band gap while the geometry minimizing the simple Keating potential leaves the gap completely clear of dislocation states. Thus, from a theoretical point of view, the chief difficulty in calculating the electronic structure of the reconstructed 90-degrees partial is the lack of accurate structural information.

ENERGY-LEVEL CALCULATIONS OF THE RECONSTRUCTED 90-DEGREES PARTIAL DISLOCATION IN SILICON

An LCAO scheme taking into account 10 atomic orbitals (s-, p-, and d-type) applied to a supercell containing 256 atoms is used to calculate the bound states of the reconstructed 90-degrees partial dislocation in Si. The results differ significantly from our earlier calculations on the unreconstructed 90-degrees partial using the same method. We find two bands separate from each other in the entire Brillouin zone and the upper band penetrates deep into the indirect band gap which is in contradiction with the general opinion that core reconstruction clears the band gap of dislocation states.

ELECTRON-STATES OF A VACANCY IN THE CORE OF THE 90-DEGREES PARTIAL DISLOCATION IN SILICON

An LCAO scheme (linear combination of atomic orbitals) taking into account ten atomic orbitals (s-, p-, and d-type) is used to calculate the electronic structure of a vacancy present in the core of the reconstructed 90 degrees partial dislocation in silicon. The levels in the band gap are extracted using Lanczos' algorithm and a continued fraction representation of the local density of states. The three-fold degenerate stale of the ideal vacancy is split into three levels with energies 0.26, 1.1, and 1.9 eV measured from the valence band edge.