1,5-二氮杂戊二烯合成非对称联吡啶研究

联吡陡及其衍生物不仅用于化工和药物合成的中间体，而且具有独特的赘合作用，可被用于金属催化剂配体等方面，因此它的合成方法研究引起了人们广泛的兴趣。但是非对称联吡陡的合成日前方法仍很少。本文利用己经被成功使用于其他含氮杂环的二碳合成子-1，5-二氮杂戊二烯（vinamidiniulnsalts），合成了单取代的2，2'-，2，3'-，2，4，一二类联吡陡。在合成1，5-二氮杂戊二烯的过程中：确立了一条以四甲氧基丙烷为原料一步合成l，5一二氮杂戊二烯的简捷，经济，易工业化的合成路线，并成功进行了公斤级的放大实验；优化了1，5-二氮杂戊二烯的亲电取代反应，高收率的获得溟代，硝化的1，5-二氮杂戊二烯；优化了从取代乙酸合成p取代1，5-二氮杂戊二烯的合成方法，高收率的获得九种p芳基取代1，5-二氮杂戊二烯。本文研究了非对称联吡睫合成的一种新方法：在碱性条件下，取代的1，5-二氮杂戊二烯盐各种乙酞基吡陡亲核加成的产物，不经分离直接和氨进行［3＋2＋1〕的成环反应，可以高收率的合成出单取代的2，2气，2，3气，2，4气三类联吡陡。这一方法己经被成功的应用于芳基取代，卤素取代，硝基取代以及无取代基的1，5-二氮杂戊二烯与三种乙酞基吡陡的反应。这种成环反应的收率与1，5-二氮杂戊二烯俘位的吸电子特征相关。因此，针对不同取代基的1，5-二氮杂戊二烯在溶剂，碱的选择以及反应温度的控制等方面进行了优化。从而成功合成出近30种单取代的非对称联吡陡。一这种合成方法，原料价格低廉，实验操作简单，而且收率高，非常适合大量合成的要求。

PULSED ELECTRICAL OPERATION OF 1.5-MU-M VERTICAL-CAVITY SURFACE-EMITTING LASERS

Vertical cavity surface emitting lasers operating in the 1.3- and 1.5-mu m wavelength ranges are highly attractive for telecommunications applications. However, they are far less well-developed than devices operating at shorter wavelengths. Pulsed electrically-injected lasing at 1.5 mu m, at temperatures up to 240 K, is demonstrated in a vertical-cavity surface-emitting laser with one epitaxial and one dielectric reflector. This is an encouraging result in the development of practical sources for optical fiber communications systems.

1.5μm Self-Aligned Spotsize Converter Integrated DFB Fabricated by Selective Area Grown MOVPE

High performance 1.57μm spotsize converter monolithically integrated DFB is fabricated by the technique of self-aligned selective area growth. The upper optical confinement layer and the butt-coupled tapered thickness waveguide are regrown simultaneously, which not only offeres the separated optimization of the active region and the integrated spotsize converter, but also reduces the difficulty of the butt-joint selective regrowth. The threshold current is as low as 4.4mA. The output power at 49mA is 10.1mW. The side mode suppression ratio (SMSR) is 33.2dB. The vertical and horizontal far field divergence angles are as small as 9° and 15° respectively, the 1dB misalignment tolerance are 3.6μm and 3.4μm.

1.5μm外腔半导体激光器弱相干光光纤通信实验系统

于2010-11-23批量导入

1.5μmInGaAsP/InP P型衬底隐埋新月型（PBC）结构激光器

于2010-11-23批量导入

1.5 mu m DFB integrated with vertical tapered spotsize converter fabricated by selective MOVPE

1.5 mu m DFB LD butt-joint integrated with vertical tapered spotsize converter was fabricated by LP-MOVPE. The vertical far field angle (FWHM) was decreased from 34degrees to 10degrees the threshold currents was as low as 19.8mA, the output power was 9.6mw at 100mA without HR coating and the SMSR was 35.8dB. The 1-dBm misalignment tolerance was 3.2 mu m, while the counterpart of the device without SSC was 2.2 mu m.