In situ annealing treatment and In-doping of GaN epilayers grown by MOVPE

The effects of in situ annealing treatment in the initial growth stage and In-doping during growth of the GaN on the material properties were investigated. GaN was grown by LP-MOVPE. In situ annealing reduced the full-width at half-maximum (FWHM) of X-ray rocking curves and reduced etch pit density of GaN films. It improved the optical properties of the epilayer. Undoped and In-doped GaN films of initial growth stage were investigated. It was found that morphology and optical properties were improved in In-doped samples. (C) 2000 Elsevier Science B.V. All rights reserved.

初步的IMP重离子治疗计划系统；A Preliminary Version of Heavy Ion Treatment Planning System at IMP

中国科学院近代物理研究所基于兰州重离子研究装置(HIRFL/HIRFL-CSR),在被动型束流配送系统下采用二维分层适形照射治疗技术开展重离子治癌临床试验研究。为了更好地利用重离子束在肿瘤放射治疗中的生物物理优势并保障重离子临床治疗试验的顺利实施,一个初级版本的重离子治疗计划系统已经设计完成。此计划系统是针对被动型束流配送系统下的二维分层适形照射治疗方式来进行设计的。介绍了此系统的设计框架、可提供的功能以及利用宽束算法进行剂量计算在此系统中的实现。通过人体仿真体模实验证实由该治疗计划系统给出的靶区计划剂量与实测剂量的偏差在5%之内。最后讨论了设计较为完备的重离子治疗计划系统仍需解决的问题。