Improvement of thin silicon on sapphire (SOS) film materials and device performances by solid phase epitaxy

The increased emphasis on sub-micron CMOS/SOS devices has placed a demand for high quality thin silicon on sapphire (SOS) films with thickness of the order 100-200 nm. It is demonstrated that the crystalline quality of as-grown thin SOS films by the CVD method can be greatly improved by solid phase epitaxy (SPE) process: implantation of self-silicon ions and subsequent thermal annealing. Subsequent regrowth of this amorphous layer leads to a greater improvement in silicon layer crystallinity and channel carrier mobility, evidenced, respectively, by double crystal X-ray diffraction and electrical measurements. We concluded that the thin SPE SOS films are suitable for application to high-performance CMOS circuitry. (C) 2000 Elsevier Science S.A. All rights reserved.

Hard magnetic properties of Sm3Fe26.7VxN4 and Sm3Fe26.7VxCy

Sm3Fe26.7V2.3N4 nitrides and Sm3Fe26.7V2.3Cy carbides have been synthesized by gas-solid phase reaction. Their hard magnetic properties have been investigated by means of additional ball-milling at room temperature. The saturation magnetization of Sm3Fe26.7V2.3N4 almost decreases linearly with increasing ball-milling time t, but that of Sm3Fe26.7V2.3Cy has no obvious change when the ball-milling time increases from t = 1 to 28 h. As a preliminary result, the maximum remanence B-r of 0.94 and 0.88 T, the coercivity mu(0i)H(C) of 0.75 and 0.25 T, and the maximum energy product (BH) of 108.5 and 39.1 kJ/m(3) for their resin-bonded permanent magnets are achieved, respectively, by ball-milling at 293 K. (C) 1999 Published by Elsevier Science B.V. All rights reserved.

Analysis of atomic force microscopic results of InAs islands formed by molecular beam epitaxy

Atomic force microscopy (AFM) measurements of nanometer-sized islands formed by 2 monolayers of InAs by molecular beam epitaxy have been carried out and the scan line of individual islands was extracted from raw AFM data for investigation. It is found that the base widths of nanometer-sized islands obtained by AFM are not reliable due to the finite size and shape of the contacting probe. A simple model is proposed to analyze the deviation of the measured value From the real value of the base width of InAs islands. (C) 1998 Elsevier Science B.V. All rights reserved.

The effect of buried AlxGa1-xN isolating layers on the transport properties of GaN deposited on sapphire substrate by molecular beam epitaxy using NH3

It is believed that the highly dislocated region near the GaN/sapphire interface is a degenerate layer. In this paper a direct evidence for such a proposal is presented. By inserting a buried AlxGa1-xN (x > 0.5) isolating layer to separate the interface region from the bulk region, the background electron concentration can be significantly reduced, while care must be taken to guarantee that there is no degrading of Hall mobility when choosing the thickness of the isolating layer. (C) 1998 Elsevier Science B.V. All rights reserved.

The growth of an AlGaN/GaN modulation-doped heterostructure by NH3 source molecular beam epitaxy

Using NH3 cracked on the growing surface as the nitrogen precursor, an AlGaN/GaN modulation-doped (MD) heterostructure without a buffer layer was grown on a nitridated sapphire substrate in a home-made molecular beam epitaxy (MBE) system. Though the Al composition is as low as 0.036, as deduced from photoluminescence (PL) measurements, the AlGaN barrier layer can be an efficient carrier supplier for the formation of a two-dimensional electron gas (2DEG) at the heterointerface. The 2DEG characteristics are verified by the variable temperature Hall measurements down to 7 K. Using a parallel conduction model, we estimate the actual mobility of the 2DEG to be 1100 cm(2)/V s as the sheet carrier density to be 1.0 x 10(12) cm(-2). Our results show that the AlGaN/GaN system is very suitable for the fabrication of high electron mobility transistors (HEMTs). (C) 1998 Elsevier Science B.V. All rights reserved.

Effects of growth interruption on self-assembled InAs/GaAs islands

The effect of growth interruption on the InAs deposition and its subsequent growth as self-assembled island structures, in particular the material transport process of the InAs layers has been investigated by photoluminescence and transmission electron microscopy measurements. InAs material in structures with only coherent islands transfers from the wetting layer to the formed islands and the growth interruption causes a red shift of PL peak energy. On the other hand, the PL peak shifts to higher energy in structures containing simultaneously coherent and noncoherent islands with dislocations. In this case, the noncoherent islands capture InAs material from the surrounding wetting layer as well as coherent islands, which casues a reduction in the size of these islands. The variations in the PL intensity and line width are also discussed. (C) 1998 Elsevier Science B.V. All rights reserved.

Parallel optical communication subsystem based on VCSEL - art. no. 67833I

A parallel optical communication subsystem based on a 12 channels parallel optical transmitter module and a 12 channels parallel optical receiver module can be used as a 10Gbps STM-64 or an OC-192 optical transponder. The bit error rate of this parallel optical communication subsystem is about 0 under the test by SDH optical transport tester during three hours and eighteen minutes.

The application of parallel optical transmitter and receiver modules in communication subsystems

A new 12 channels parallel optical transmitter module in which a Vertical Cavity Surface Emitting Laser (VCSEL) has been selected as the optical source is capable of transmitting 37.5Gbps date over hundreds meters. A new 12 channels parallel optical receiver module in which a GaAs PIN (p-intrinsic-n-type) array has been selected as the optical receiver unit is capable of responding to 30Gbps date. A transmission system based on a 12 channels parallel optical transmitter module and a 12 channels parallel optical receiver module can be used as a 10Gbps STM-64 or an OC-192 optical transponder. The parallel optical modules and the parallel optical transmission system have passed the test in laboratory.

Time-resolved photoluminescence spectra of self-assembled InAs/GaAs quantum dots

Two types of InAs self-assembled Quantum dots (QDs) were prepared by Molecular beam epitaxy. Atomic force microscopy (AFM) measurements showed that, compared to QDs grown on GaAs substrate, QDs grown on InGaAs layer has a significantly enhanced density. The short spacing (several nanometer) among QDs stimulates strong coupling and leads to a large red-shift of the 1.3 mu m photoluminescence (PL) peak. We study systematically the dependence of PL lifetime on the QDs size, density and temperature (1). We found that, below 50 K, the PL lifetime is insensitive to temperature, which is interpreted from the localization effects. As T increases, the PL lifetime increases, which can be explained from the competition between the carrier redistribution and thermal emission at higher temperature. The increase of carriers in QDs migrated from barriers and wetting layer (WL), and the redistribution of carriers among QDs enhance the PL lifetime as T increases. The thermal emission and non-radiative recombination have effects to reduce the PL lifetime at higher T. As a result, the radiative recombination lifetime is determined by the wave function overlapping of electrons and holes in QDs, and QDs with different densities have different PL lifetime dependence on the QDs size. (c) 2005 Elsevier B.V. All rights reserved.

An Ultra Low Power Non-volatile Memory in Standard CMOS Process for Passive RFID Tags

An ultra low power non-volatile memory is designed in a standard CMOS process for passive RFID tags. The memory can operate in a new low power operating scheme under a wide supply voltage and clock frequency range. In the charge pump circuit the threshold voltage effect of the switch transistor is almost eliminated and the pumping efficiency of the circuit is improved. An ultra low power 192-bit memory with a register array is implemented in a 0.18 mu M standard CMOS process. The measured results indicate that, for the supply voltage of 1.2 volts and the clock frequency of 780KHz, the current consumption of the memory is 1.8 mu A (3.6 mu A) at the read (write) rate of 1.3Mb/s (0.8Kb/s).

Additions and corrections to “Terminal coalgebras in well-founded set theory”

This note is to correct certain mistaken impressions of the author's that were in the original paper, “Terminal coalgebras in well-founded set theory”, which appeared in Theoretical Computer Science 114 (1993) 299–315.

面向Feistel密码的基于故障传播模式的差分故障分析

密码算法是信息安全研究的核心内容之一，其实际安全性不仅依赖于密码自身的数学特性，也依赖于具体的实现特性。基于实现的密码分析是一种有别于传统密码分析的新型密码分析方法，它利用算法实现时的信息泄露来恢复秘密信息。差分故障分析(Differential Fault Analysis，简称DFA)就是这样一类重要的密码分析方法。 现代密码学中，密码设计通常基于混淆和扩散这两大基本原则。对于一个分组密码而言，选择一个合适的轮函数并进行若干次迭代可以提供必要的混淆和扩散。因此，目前流行的分组密码均为迭代型密码，所采用的典型结构包括Feistel结构、SPN结构和广义Feistel结构等。这些密码结构及其所采用的基础密码组件(例如，S盒和P置换等)的性质，完全决定了故障在传播过程中所呈现的一些模式。直观上，这种内在特征可以用于挖掘DFA攻击和密码结构之间的关系。因此，完全可能利用这种特征来建立一种面向密码结构的系统化DFA攻击方法。 本文主要研究面向Feistel密码的差分故障分析方法，并探讨这类分析方法与已有可证明安全性理论分析结论之间的关系。为此，引入了故障传播路径(Fault Propagation Path，简称FPPath)和故障传播模式(Fault Propagation Pattern，简称FPPattern)的概念，给出了适用于Feistel结构的 FPPath 和 FPPattern 计算方法，建立了与已有可证明安全性理论结果之间的关系。在此基础上，提出了一种面向Feistel密码的基于故障传播模式的 系统化差分故障分析方法。使用该方法，可编程实现FPPath和FPPattern的自动计算，这将有助于针对Feistel密码的自动化DFA攻击的实施。这种情形下，可将FPPath的长度视作评估DFA攻击有效性的一种度量指标。此外，该系统化方法的必然结果是攻击性能的显著提高：不但攻击轮数有所减少，而且故障植入点数量也会减少，这将迅速降低实施一次成功攻击所需的故障密文数。最后，为验证该方法的正确性和有效性，以Camellia密码算法为具体实例，进行了相关模拟攻击实验研究，并给出了相应的数据复杂度分析和时间复杂度分析。通过充分利用Camellia算法中P置换的性质，在不需要穷举搜索的情况下，新攻击方法仅需要6个故障密文即可完全恢复出128位密钥，而成功恢复出192位或256位密钥所需要的故障密文数则为22个。结果表明，基于FPPattern的DFA方法要优于所有已有同类方法。

低轮Camellia的碰撞攻击

Camellia是欧洲密码大计划NESSIE的最终获胜者, 首先构造了Camellia的4轮区分器, 然后利用这些区分器和碰撞搜索技术分析Camellia的安全性. 在密钥长度为128比特的情况下, 攻击6轮Camellia的数据复杂度小于210个选择明文, 时间复杂度小于215次加密; 攻击7轮Camellia的数据复杂度小于212个选择明文, 时间复杂度小于254.5次加密; 攻击8轮Camellia的数据复杂度小于213个选择明文, 时间复杂度小于2112.1次加密; 攻击9轮Camellia的数据复杂度小于2113.6个选择明文, 时间复杂度小于2121次加密. 在密钥长度为192/256比特的情况下, 攻击8轮Camellia的数据复杂度小于213个选择明文, 时间复杂度小于2111.1次加密; 攻击9轮Camellia的数据复杂度小于213个选择明文, 时间复杂度小于2175.6次加密; 攻击10轮Camellia的数据复杂度小于214个选择明文, 时间复杂度小于2239.9次加密. 结果显示碰撞攻击是目前对低轮Camellia最有效的攻击方法.

NUSH分组密码的线性密码分析

NUSH是NESSIE公布的17个候选分组密码之一.对不同分组长度和密钥规模的NUSH进行了线性密码分析,每一种攻击的复杂度δ由它所需的数据复杂度ε和处理复杂度η组成,记为δ=(ε,η).对于分组长度为64 bit的NUSH,当密钥为128 bit时,3种攻击的复杂度分别为(258,2124)、(260,278)和(262,255);当密钥为192 bit时,3种攻击的复杂度分别为(258,2157)、(260,296)和(262,258);当密钥为256 bit时,3种攻击的复杂度分别为(258,2125)、(260,278)和(262,253).对于分组长度为128 bit的NUSH,当密钥为128bit时,3种攻击的复杂度分别为(2122,295)、(2124,257)和(2126,252);当密钥为192 bit时,3种攻击的复杂度分别为(2122,2142)、(2124,275)和(2126,258);当密钥为256 bit时,3种攻击的复杂度分别为(2122,2168)、(1224,281)和(2126,264).对于分组长度为256 bit的NUSH,当密钥为128 bit时,两种攻击的复杂度分别为(2252,2122)和(2254,2119);当密钥为192 bit时,两种攻击的复杂度分别为(2252,2181)和(2254,2177);当密钥为256 bit时,两种攻击的复杂度分别为(2252,2240)和(2254,2219).这些结果显示NUSH对线性密码分析是不免疫的,而且密钥规模的增大不能保证安全性的提高.