Antimicrobial activity of highly stable silver nano particles embedded in agar-agar matrix as a thin film

Highly stable silver nanoparticles (Ag NPs) in agar-agar (Ag/agar) as inorganic-organic hybrid were obtained as free-standing film by in situ reduction of silver nitrate by ethanol. The antimicrobial activity of Ag/agar film on Escherichia coli (E. coil), Staphylococcus aureus (S. aureus), and Candida albicans (C albicans) was evaluated in a nutrient broth and also in saline solution. In particular, films were repeatedly tested for antimicrobial activity after recycling. UV-vis absorption and TEM studies were carried out on films at different stages and morphological studies on microbes were carried out by SEM. Results showed spherical Ag NPs of size 15-25 nm, having sharp surface plasmon resonance (SPR) band. The antimicrobial activity of Ag/agar film was found to be in the order, C. albicans > E. coil > S. aureus, and antimicrobial activity against C. albicans was almost maintained even after the third cycle. Whereas, in case of E. coil and S. aureus there was a sharp decline in antimicrobial activity after the second cycle. Agglomeration of Ag NPs in Ag/agar film on exposure to microbes was observed by TEM studies. Cytotoxic experiments carried out on HeLa cells showed a threshold Ag NPs concentration of 60 mu g/mL, much higher than the minimum inhibition concentration of Ag NPs (25.8 mu g/mL) for E. coli. The mechanical strength of the film determined by nanoindentation technique showed almost retention of the strength even after repeated cycle. (C) 2010 Elsevier Ltd. All rights reserved.

On the uniformity of film thickness on rotating spherical substrates on a planar work holder

Curves for the uniformity in film thickness on spherical substrates are drawn for various geometries. The optimum source-to-substrate height for maximum uniformity of the film thickness is determined. These data are approximated to achieve uniform thickness on a large number of small planar substrates loaded on a large spherical substrate holder, the appropriate geometry being selected on the basis of the radius of curvature of the substrate holder.

Thin film amorphous semiconductor microwave switches

Microwave switches operating in the X band were designed and fabricated using amorphous chalcogenide semiconductors of composition GexTeyAsz. Threshold devices were shown to operate as microwave modulators at modulation frequencies of up to 100 MHz. No delay time was observed at the highest frequency although the modulation efficiency decreased above 10 MHz owing to the finite recovery time which was approximately 0.3 × 10−8s. The devices can also be used as variolossers, the insertion loss being 0.5 dB in the OFF state and increasing on switching from 5 dB at 1 mA device current to 18 dB at 100 mA.The behaviour of the threshold switches can be explained in terms of the formation of a conducting filament in the ON state with a constant current density of 2 × 104Acm−2 that is shunted by the device capacitance. The OFF state conductivity σ varies as ωn (0.5 < n < 1) which is characteristic of hopping in localized states. However, there was evidence of a decrease in n or a saturation of the conductivity at high frequencies.As a result of phase separation memory switches require no holding current in the ON state and may be used as novel latching semiconductor phase-shifters.

Electrical switching behavior of amorphous Al23Te77 thin film sample

The electrical switching behavior of amorphous Al23Te77 thin film devices, deposited by flash evaporation, has been studied in co-planar geometry. It is found that these samples exhibit memory type electrical switching. Scanning Electron Microscopic studies show the formation of a crystalline filament in the electrode region which is responsible for switching of the device from high resistance OFF state to low resistance ON state. It is also found that the switching behavior of thin film Al-Te samples is similar to that of bulk samples, with the threshold fields of bulk samples being higher. This has been understood on the basis of higher thermal conductance in bulk, which reduces the Joule heating and temperature rise in the electrode region. (C) 2010 Elsevier B.V. All rights reserved.

Characterization of a large-area PVDF thin film for electro-mechanical and ultrasonic sensing applications

Large-area PVDF thin films have been prepared and characterized for quasi-static and high frequency dynamic strain sensing applications. These films are prepared using hot press method and the piezoelectric phase (beta-phase) has been achieved by thermo-mechanical treatment and poling under DC field. The fabricated films have been characterized for quasi-static strain sensing and the linear strain-voltage relationship obtained is promising. In order to evaluate the ultrasonic sensing properties, a PZT wafer has been used to launch Lamb waves in a metal beam on which the PVDF film sensor is bonded at a distance. The voltage signals obtained from the PVDF films have been compared with another PZT wafer sensor placed on the opposite surface of the beam as a reference signal. Due to higher stiffness and higher thickness of the PZT wafer sensors, certain resonance patterns significantly degrade the sensor sensitivity curves. Whereas, the present results show that the large-area PVDF sensors can be superior with the signal amplitude comparable to that of PZT sensors and with no resonance-induced effect, which is due to low mechanical impedance, smaller thickness and larger area of the PVDF film. Moreover, the developed PVDF sensors are able to capture both A(0) and S-0 modes of Lamb wave, whereas the PZT sensors captures only A(0) mode in the same scale of voltage output. This shows promises in using large-area PVDF films with various surface patterns on structures for distributed sensing and structural health monitoring under quasi-static, vibration and ultrasonic situations. (C) 2010 Elsevier B.V. All rights reserved.

Improved growth of GaN layers on ultra thin silicon nitride/Si (111) by RF-MBE

High-quality GaN epilayers were grown on Si (1 1 1) substrates by molecular beam epitaxy using a new growth process sequence which involved a substrate nitridation at low temperatures, annealing at high temperatures, followed by nitridation at high temperatures, deposition of a low-temperature buffer layer, and a high-temperature overgrowth. The material quality of the GaN films was also investigated as a function of nitridation time and temperature. Crystallinity and surface roughness of GaN was found to improve when the Si substrate was treated under the new growth process sequence. Micro-Raman and photoluminescence (PL) measurement results indicate that the GaN film grown by the new process sequence has less tensile stress and optically good. The surface and interface structures of an ultra thin silicon nitride film grown on the Si surface are investigated by core-level photoelectron spectroscopy and it clearly indicates that the quality of silicon nitride notably affects the properties of GaN growth. (C) 2010 Elsevier Ltd. All rights reserved.

Diaphragm-type sputtered platinum thin film strain gauge pressure transducer

A diaphragm-type pressure transducer with a sputtered platinum film strain gauge (sensing film) has been designed and fabricated. The various steps followed to prepare thin film strain gauges on the diaphragm are described. M-bond 450 adhesive (Measurements Group, USA) has been employed as the insulating layer. A detailed procedure to cure this layer is given. A d.c. sputtering method is employed to prepare the platinum films. This paper also includes details of the strain gauge pattern and its location on the diaphragm. A description of the output characteristics and overall behaviour of the platinum thin film pressure transducer is reported.

Effect of tolerance on the propagation characteristic of a superconducting thin film microstrip delay line

The propagation constant of a superconducting microstrip transmission delay line is evaluated using the spectral domain immitance approach, modelling the superconductor as a surface current having an equivalent surface impedance found through the complex resistive boundary condition. The sensitivity approach is used to study the beta variations with substrate parameters and film characteristics. Results show that the surface impedance does not have much influence on beta sensitivities with respect to epsilon r, W and h. However, it can be observed that the surface impedance plays a crucial role in determining the optimum design.

Effects of thermal annealing on the properties of zirconia films prepared by ion-assisted deposition

The effect of thermal annealing in the range 300–800 °C on the properties of zirconia films prepared by ion assisted deposition was studied. It was found that at low temperature the cubic phase is formed. This phase is stable up to 700 °C. All the films exhibit a monophasic monoclinic structure at 800 °C. The stress, estimated from X-ray patterns, shows a transition from tensile to compressive with increasing ion fluence. The refractive index and extinction coefficient do not seem to change appreciably up to 700 °C, showing a marked degradation thereafter. Single step annealing to the highest temperature was found to result in better stability than multistep annealing.

Epitaxial metallic LaNiO3 thin films grown by pulsed laser deposition

Epitaxial LaNiO3(LNO) thin films on LaAlO3(LAO), SrTiO3(STO), and YSZ are grown by pulsed laser deposition method at 350 mTorr oxygen partial pressure and 700 °C substrate temperature. As‐deposited LNO films are metallic down to 10 K. c‐axis oriented YBa2Cu3O7 (YBCO) films were grown on LNO/LAO as well as LNO/STO surfaces without affecting superconducting transition temperature of YBCO. Textured LNO thin films were grown on c‐axis oriented YBCO/STO and YBCO/YSZ . Transport measurements of these bilayer films showed that LNO is a good metallic contact material for YBCO.

Random sequential multilayer deposition of different‐sized k mers on a one dimensional infinite substrate

Kinetics of random sequential, irreversible multilayer deposition of macromolecules of two different sizes on a one dimensional infinite lattice is analyzed at the mean field level. A formal solution for the corresponding rate equation is obtained. The Jamming limits and the distribution of gaps of exact sizes are discussed. In the absence of screening, the jamming limits are shown to be the same for all the layers. A detailed analysis for the components differing by one monomer unit is presented. The small and large time behaviors and the dependence of the individual jamming limits of the k mers and (k−1) mers on k and the rate parameters are analyzed.

Nano structured carbon nitrides prepared by chemical vapour deposition

Nanostructured carbon nitride films were prepared by pyrolysis assisted chemical vapour deposition(CVD). A two zone furnace with a temperature profile having a uniform temperature over a length of 20 cm length has been designed and developed. The precursor Azabenzimidazole was taken in a quartz tube and evaporated at 400 degrees C. The dense vapours enter the pyrolysis zone kept at a desired temperature and deposit on the quartz substrates. The FTIR spectrum of the prepared samples shows peaks at 1272 cm(-1) (C-N stretching) and 1600 cm(-1) (C=N) confirms the bonding of nitrogen with carbon. Raman D and G peaks, are observed at 1360 cm(-1) and 1576 cm(-1) respectively. XPS core level spectra of C 1s and N 1s show the formation of pi bonding between carbon and nitrogen atoms. The size of the nano crystals estimated from the SEM images and XRD is similar to 100 nm. In some regions of the sample a maximum of 57 atom % of nitrogen has been observed.