Nd：YAG透明陶瓷的烧成及其显微结构

由溶胶一凝胶／燃烧合成结合法合成了Nd：YAG(掺钕钇铝石榴石，neodymium—doped yttrium aluminium garnet)粉体，用真空烧结法制备了Nd：YAG透明陶瓷。研究了显微结构随烧结温度和保温时间的变化，并对透明陶瓷的晶界结构和成分分布进行了表征。随着烧结温度的提高和保温时间的延长，Nd：YAG陶瓷的密度增大，晶形发育完整，透过率提高。晶粒内部和晶界的化学组成基本相同。所制备的Nd：YAG透明陶瓷在激光工作波长1064nm的透过率达到75％。

溶胶-凝胶法制备MgxZn1-xO及其特性

采用溶胶-凝胶法制备了不同组分（x=0．1—0．3）的MgxZn1-xO前驱体，并对它进行不同温度的热处理（550℃-1000℃）。X射线衍射（XRD）结果表明，Mg0.1Zn0.9O具有和ZnO一样的衍射谱，为六方纤锌矿结构，而且随着热处理温度的升高，ZnO衍射峰的强度逐渐增强，半高宽不断减小；Mg元素掺杂浓度增大后，出现了MgO的峰位。扫描电子显微镜（SEM）显示Mg0．1Zn0.9O晶粒粒径分布较均匀；热处理温度升高，晶粒的尺寸不断变大。用室温荧光光谱（PL）分析了经过550—1000℃热处理获得的

Synthesis and characterization of room-temperature ferromagnetism in Fe- and Ni-co-doped In2O3

Observation of room-temperature ferromagnetisin in Fe- and Ni-co-doped In2O3 samples (In0.9Fe0.1-xNix)(2)O-3 (0 <= x <= 0.1) prepared by citric acid sol-gel auto-igniting method is reported. All of the samples with intermediate x values are ferromagnetic at roomtemperature. The highest saturation magnetization (0.453 mu B/Fe + Ni ions) moment is reached in the sample with x = 0.04. The highest solubility of Fe and Ni ions in the In2O3 lattice is around 10 and 4 at%, respectively. The 10 at% Fe-doped sample is found to be weakly ferromagnetic, while the 10at% Ni-doped sample is paramagnetic. Extensive structure including Extended X-ray absorption fine structure (EXAFS), magnetic and magneto-transport including Hall effects studies on the samples indicate the observed ferromagnetism is intrinsic rather than from the secondary impurity phases. (c) 2007 Elsevier Ltd. All rights reserved.

Low-temperature hydrothermal growth of oriented [0001] ZnO film

Well-aligned ZnO films have been successfully prepared by using low-temperature hydrothermal approach on (0001) sapphire substrates that were pre-coated with a ZnO nano-layer by dip-coating. The characterizations of scanning electron microscopy (SEM) and X-ray diffraction (XRD) indicate that the ZnO films consist of hexagonal rods that grow along the c axis based on the sapphire substrates. It is found that the size of ZnO rods can be adjusted by an aqueous solution with some methenamine. (c) 2006 Elsevier B.V. All rights reserved.

ZnO纳米线的水热法生长

本文采用两步湿化学法在玻璃衬底上制备了ZnO纳米线.首先,利用Sol-gel方法在载玻片上制备含有ZnO纳米颗粒的薄膜作为“种子”衬底.然后,利用水热法在“种子”衬底上生长了高度取向的ZnO纳米线.并对“种子”衬底和随后生长的ZnO纳米线进行了X射线衍射（XRD）、扫描电子形貌图（SEM）和原子力显微镜（AFM）等分析.结果表明“种子”衬底为大范围内纳米颗粒均匀一致的ZnO 薄膜.通过水热法制备的ZnO纳米线的直径在50～80nm,平均直径为60nm,长度大约为2μm.该ZnO纳米线除了具有很强的紫外发光

LiAlO2衬底上ZnO薄膜的溶胶-凝胶法制备和表征

采用溶胶凝胶法在LiAlO2（302）衬底上制备了ZnO薄膜。用X射线衍射（XRD）和扫描电镜（SEM）对样品的结构和形貌进行了表征。XRD结果表明,随着热处理温度的升高（350℃、450℃、550℃、600℃、800℃）,所得到的薄膜分别为单相ZnAl2O4（350℃）,ZnAl2O4和ZnO的混合相（450℃）以及单相的ZnO（550℃、600℃、800℃）,并且ZnO薄膜C轴择优取向的生长趋势随温度升高相应明显。SEM图像显示,随着热处理温度的升高,ZnO薄膜的粒径相应变大。

Influence of LiB3O5 structure on microstructure and optical properties of ZrO2, thin films prepared by electron beam evaporation

ZrO2 thin films were deposited bill using an electron beam evaporation technique on three kinds of lithium triborate (LiB3O5 or LBO) substrates with the surfaces at specified crystalline orientations. The influences of the LBO structure on the structural and optical properties of ZrO2 thin films are studied by spectrophotometer and x-ray diffraction. The results indicate that the substrate structure has obvious effects on the structural end optical properties of the film: namely. the ZrO2 thin film deposited on the X-LBO, Y-LBO and Z-LBO orients to m(-212), m(021) and o(130) directions. It is also found that the ZrO2 thin film with m(021) has the highest refractive index and the least lattice misfit.

Development of osteoinductive Si-based coatings to improve dental implants' performance

290 p.

Pátinas y revestimientos en portadas medievales de Navarra. Técnicas históricas y nuevas tecnologías de restauración

730 p.

Síntese e caracterização de TiO2 puro e modificado para aplicações ambientais

Fotocatalisadores baseados em nanopartículas de dióxido de titânio modificados fornecem soluções em potencial para a mineralização de poluentes orgânicos em meio aquoso. Agentes modificadores têm sido amplamente investigados com o objetivo de promover a fotoativação pela luz visível. Foram estudadas a nível fundamental até aqui, as modificações estruturais, texturais e óticas causadas pela introdução de silício e nitrogênio na rede da titânia. Titânias puras (TiO2) e modificadas nanoestruturadas, particularmente titânias modificadas com silício (TiO2-SiO2), com razões atômicas Si/Ti de 0,1, 0,2 e 0,3 foram sintetizadas pelo método sol-gel a partir da hidrólise ácida de isopropóxido de titânio(IV) e tetraetoxisilano. As metodolo-gias sintéticas desenvolvidas tentaram aderir aos princípios da Química Verde, dispensando o uso de atmosfera inerte e temperatura e pressão elevadas, o que foi alcançado utilizando-se, principalmente, a agitação ultrassônica. Titânias modificadas com silício e dopadas com ni-trogênio (TiO2-SiO2-N) foram obtidas a partir do pré-tratamento de TiO2-SiO2 a 500 C ao ar e então submetidas ao fluxo de amônia (NH3) a 600 C por 1-3 h e, após resfriamento, foram recozidas a 400 C ao ar. Amostras distintas foram caracterizadas, na forma de pó seco e após calcinação entre 400600 C, por difração de raios X, adsorção de nitrogênio, microscopia eletrônica de varredura e espectroscopia de refletância difusa no UV-Visível. As titânias pu-ras, obtidas principalmente variando-se a razão de hidrólise, foram cristalizadas na forma de anatásio como fase predominante até 600 C, além de traços de brookita presente até 500 C. O rutilo foi identificado a partir de 600 C como fase minoritária, embora apresentando tama-nhos de cristal significativamente maiores que os estimados para o cristal de anatásio. As titâ-nias modificadas com até 20% de silício apresentaram notável estabilidade térmica, evidenci-ada pela presença exclusiva de anatásio até 900 C. Foi também observado o aparecimento de macroporos com diâmetro médio em torno de 55 nm após calcinação a 400 C, diferentemente do que se observou nas amostras em geral. A introdução de baixo teor de silício assegurou às titânias calcinadas valores elevados de área específica, atribuído ao efeito de contenção acentuada na taxa de crescimento do cristal. As titânias modificadas com silício e as titânias puras obtidas com taxa de hidrólise 25:1 para a razão H2O : Ti apresentaram mesoporos com diâmetros médios de mesma dimensão do cristal. As titânias modificadas com silício e dopa-das com nitrogênio apresentaram absorção na região visível entre 400-480 nm, com discreta redução da energia de band gap para as transições eletrônicas consideradas. Titânias calcina-das a 300−400 C apresentaram desempenho fotocatalítico semelhante ao TiO2 P25 da De-gussa sob irradiação UV, na degradação do azo corante Reactive Yellow 145 em soluções a-quosas em pH 5 a 20 1C

High sensitive NO2 gas sensor with low power consumption using selectively grown ZnO nanorods.

The noble gas sensor using multiple ZnO nanorods was fabricated with CMOS compatible process and sol-gel growth method on selective area and gas response characteristics to NO2 gas of the sensor device were investigated. We confirmed the sensors had high sensitive response denoted by the sensitivity of several tens for NO2 gas sensing and also showed pretty low power consumption close to 20 mW even though the recovery of resistance come up to almost the initial value.

Dynamical behavior of damped driven coupled single electron simple harmonic oscillators

Coherent coupling between a large number of qubits is the goal for scalable approaches to solid state quantum information processing. Prototype systems can be characterized by spectroscopic techniques. Here, we use pulsed-continuous wave microwave spectroscopy to study the behavior of electrons trapped at defects within the gate dielectric of a sol-gel-based high-k silicon MOSFET. Disorder leads to a wide distribution in trap properties, allowing more than 1000 traps to be individually addressed in a single transistor within the accessible frequency domain. Their dynamical behavior is explored by pulsing the microwave excitation over a range of times comparable to the phase coherence time and the lifetime of the electron in the trap. Trap occupancy is limited to a single electron, which can be manipulated by resonant microwave excitation and the resulting change in trap occupancy is detected by the change in the channel current of the transistor. The trap behavior is described by a classical damped driven simple harmonic oscillator model, with the phase coherence, lifetime and coupling strength parameters derived from a continuous wave (CW) measurement only. For pulse times shorter than the phase coherence time, the energy exchange between traps, due to the coupling, strongly modulates the observed drain current change. This effect could be exploited for 2-qubit gate operation. The very large number of resonances observed in this system would allow a complex multi-qubit quantum mechanical circuit to be realized by this mechanism using only a single transistor.

Smart chemical sensor application of ZnO nanowires grown on CMOS compatible SOI microheater platform

Smart chemical sensor based on CMOS(complementary metal-oxide- semiconductor) compatible SOI(silicon on insulator) microheater platform was realized by facilitating ZnO nanowires growth on the small membrane at the relatively low temperature. Our SOI microheater platform can be operated at the very low power consumption with novel metal oxide sensing materials, like ZnO or SnO2 nanostructured materials which demand relatively high sensing temperature. In addition, our sol-gel growth method of ZnO nanowires on the SOI membrane was found to be very effective compared with ink-jetting or CVD growth techniques. These combined techniques give us the possibility of smart chemical sensor technology easily merged into the conventional semiconductor IC application. The physical properties of ZnO nanowire network grown by the solution-based method and its chemical sensing property also were reported in this paper.

Dye-sensitized solar cells based on a single layer deposition of TiO 2 from a new formulation paste and their photovoltaic performance

A new strategy for enhancing the efficiency and reducing the production cost of TiO 2 solar cells by design of a new formulated TiO 2 paste with tailored crystal structure and morphology is reported. The conventional three- or four-fold layer deposition process was eliminated and replaced by a single layer deposition of TiO 2 compound. Different TiO 2 pastes with various crystal structures, morphologies and crystallite sizes were prepared by an aqueous particulate sol-gel process. Based on simultaneous differential thermal (SDT) analysis the minimum annealing temperature to obtain organic-free TiO 2 paste was determined at 400°C, being one of the lowest crystallization temperatures of TiO 2 photoanode electrodes for solar cell application. Photovoltaic measurements showed that TiO 2 solar cell with pure anatase crystal structure had higher power conversion efficiency (PCE) than that made of pure rutile-TiO 2. However, the PCE of solar cells depends on the anatase to rutile weight ratio, reaching a maximum at a specific value due to the synergic effect between anatase and rutile TiO 2 nanoparticles. Moreover, it was found that the PCE of solar cells made of crystalline TiO 2 powders was much higher, increasing in the range 32-84% depending on anatase to rutile weight ratio, than that of prepared by amorphous powders. TiO 2 solar cell with the morphology of mixtures of nanoparticles and microparticles had higher PCE than the solar cell with the same phase composition containing TiO 2 nanoparticles due to the role of TiO 2 microparticles as light scattering particles. The presented strategy would open up new insight into fabrication and structural design of low-cost TiO 2 solar cells with high power conversion efficiency. © 2012 Elsevier Ltd.

Carbon nanotube growth for through silicon via application.

Through silicon via (TSV) technology is key for next generation three-dimensional integrated circuits, and carbon nanotubes (CNT) provide a promising alternative to metal for filling the TSV. Three catalyst preparation methods for achieving CNT growth from the bottom of the TSV are investigated. Compared with sputtering and evaporation, catalyst deposition using dip-coating in a FeCl2 solution is found to be a more efficient method for realizing a bottom-up filling of the TSV (aspect ratio 5 or 10) with CNT. The CNT bundles grown in 5 min exceed the 50 μm length of the TSV and are multi-wall CNT with three to eight walls. The CNT bundles inside the TSV were electrically characterized by creating a direct contact using a four-point nanoprober setup. A low resistance of the CNT bundle of 69.7 Ω (297 Ω) was measured when the CNT bundle was contacted midway along (over the full length of) the 25 μm deep TSV. The electrical characterization in combination with the good filling of the TSV demonstrates the potential use of CNT in fully integrated TSV applications.