激光辐照引起Ge2Sb2Te5非晶态薄膜的电/光性质变化

研究了激光辐照引起Ge2Sb2Te5非晶态薄膜的电/光性质变化,当激光功率为580mW时薄膜的方块电阻有四个数量级（10^7～10^3Ω/□）的突变;对电阻发生突变前、中、后的三个样品进行了XRD测试,结果表明,随着激光功率的增大,薄膜由非晶态向晶态转变,用椭偏仪测试了结构转变前、中、后三个样品的光学常数,在可见光范围内薄膜的光学常数在波长相同情况下有：n（非晶态）〉n（中间态）〉n（晶态）,k（晶态）〉k（中间态）〉k（非晶态）,α（晶态）〉α（中间态）〉α（非晶态）,结合电阻变化曲线和XRD图谱讨论了激光辐照Ge2Sb2Te5非晶态薄膜的电/光性质变化同激光功率和结构转变之间的关系.

Si underlayer induced nano-ablation in AgInSbTe thin films

AgInSbTelSi thin films on glass substrates are prepared by dc magnetron sputtering at room temperature. Using Si underlayer as the thermal diffusion layer, the super-resolution nano-ablation holes with a size of 70nm in the AgInSbTe phase change films are obtained by a far-field focused laser experimental setup, with laser wavelength 405nm and objective-lens numerical aperture 0.90. The nano-ablation formation mechanism is analysed and discussed via the thermal diffusion of sample structures.

Structural change of laser-irradiated Ge2Sb2Te5 films studied by electrical property measurement

Sheet resistance of laser-irradiated Ge2Sb2Te5 thin films prepared by magnetron sputtering was measured by the four-point probe method. With increasing laser power the sheet resistance undergoes an abrupt drop from 10(7) to 10(3) Omega/square at about 580 mW. The abrupt drop in resistance is due to the structural change from amorphous to crystalline state as revealed by X-ray diffraction (XRD) study of the samples around the abrupt change point. Crystallized dots were also formed in the amorphous Ge2Sb2Te5 films by focused short pulse laser-irradiated, the resistivities at the crystallized dots and the non-crystallized area are 3.375 x 10(-3) and 2.725 Omega m, sheet resistance is 3.37 x 10(4) and 2.725 x 10(7) Omega/square respectively, deduced from the I-V Curves that is obtained by conductive atomic force microscope (C-AFM). (C) 2008 Elsevier B.V. All rights reserved.

Effect of alkali and alkaline earth fluoride introduction on thermal stability and structure of fluorophosphate glasses

The thermal stability and structure of RF-RF2-AIF(3)-Al(PO3)(3) fluorophosphate glasses were investigated. Analyses of infrared absorbance spectra and Raman spectra reveal that with increasing number of alkali and alkaline earth fluoride components, the sum of P-O-P bond and O-P-O bond increases and glass network is strengthened. Consequently, the inhibition to nucleation and crystallization processes is improved, which is proved by the increment of thermal stability factors AT and S determined by differential scanning calorimetry. In addition, it was found that LiF has poor ability to form glass in univalent alkali fluorides and MgF2 has comparative strong ability to form glass in bivalent alkaline earth fluorides. (c) 2006 Published by Elsevier B.V.

Si（111）衬底上ZnO薄膜的磁控溅射法制备及表征

采用磁控溅射法在(111)单晶硅衬底上沉积了ZnO薄膜，并研究了退火温度对ZnO薄膜晶体质量、晶粒度大小、应力和光致发光谱的影响。X射线衍射(XRD)表明薄膜为高度c轴择优取向。不同退火温度下的ZnO薄膜应力有明显变化。应力分布最为均匀的退火温度为500℃。室温下对ZnO薄膜进行了光谱分析，可观测到明显的紫光发射(波长为380nm左右)。实验结果表明，用磁控溅射法在单晶硅衬底上能获得高质量的ZnO薄膜。

非晶硅薄膜制备及其晶化特性研究

用磁控溅射法在K9玻璃上沉积了非晶硅（a—Si）膜和a—Si／Al膜，并将其在流动的N2气氛下进行退火。对退火前后的样品进行Raman光谱、XRD和SEM表征和分析。Raman光谱表明随着退火温度的升高，a-Si膜的散射峰出现了明显的蓝移，但XRD结果表明薄膜仍为非晶态；而a—Si／Al膜在温度很低时就已经开始晶化。

LiGaO_2衬底上ZnO外延膜的结构与光学特性

采用磁控溅射法在(001)、(100)及(010)LiGaO2衬底上制备了ZnO薄膜,通过X射线衍射(XRD)、原子力显微镜(AFM)、透过光谱以及光致发光谱(PL)对薄膜的结构、形貌及光学性质进行了表征。结果表明LiGaO2衬底不同晶面上制备的ZnO薄膜具有不同的择优取向,在(001)(、100)及(010)LiGaO2上分别获得了[0001][、1100]及[1120]取向的ZnO薄膜;不同取向的ZnO薄膜表面形貌差异较大;薄膜在可见光波段具有较高的透过率;在ZnO薄膜的光致发光谱中只观察到了位于378 nm的紫外发射峰,而深能级发射几乎观察不到,(1100)取向的薄膜紫外发射峰强度最大,半高宽也最小,薄膜光致发光性质的差异主要和晶粒尺寸有关。