Annealing behavior of hexagonal phase content in cubic GaN thin films grown on GaAs (001) by MOCVD

The annealing behavior of the hexagonal phase content in cubic GaN (c-GaN) thin films grown on GaAs (001) by MOCVD is reported. C-GaN thin films are grown on GaAs (001) substrates by metalorganic chemical vapor deposition (MOCVD). High temperature annealing is employed to treat the as-grown c-GaN thin films. The characterization of the c-GaN films is investigated by photoluminescence (PL) and Raman scattering spectroscopy. The change conditions of the hexagonal phase content in the metastable c-GaN are reported. There is a boundary layer existing in the c-GaN/GaAs film. When being annealed at high temperature, the intensity of the TOB and LOB phonon modes from the boundary layer weakens while that of the E-2 phonon mode from the hexagonal phase increases. The content change of hexagonal phase has closer relationship with annealing temperature than with annealing time period.

Influence of Al content on electrical and structural properties of Si-doped AlxGa1-xN/GaN HEMT structures

Improved electrical properties of AlxGa1-xN/GaN high electron mobility transistor (HEMT) structures grown by metalorganic chemical vapor deposition (MOCVD) were achieved through increasing the Al mole fraction in the AlGaN barrier layers. An average sheet resistance of 326.6 Omega/sq and a good resistance uniformity of 98% were obtained for a 2-inch Al0.38Ga0 62N/GaN HEMT structure. The surface morphology of AlxGa1-xN/GaN HEMT structures strongly correlates with the Al content. More defects were formed with increasing Al content due to the increase of tensile strain, which limits further reduction of the sheet resistance. (c) 2006 WILEY-VCH Verlag GmbH & Co KGaA, Weinheim.

1.3 mu m high indium content (42.5%) GaInNAs/GaAs quantum wells grown by molecular beam epitaxy

High structural and optical quality 1.3 mu m GaInNAs/GaAs quantum well (QW) samples with 42.5% indium content were successfully grown by molecular beam epitaxy. The growth of well layers was monitored by reflection high-energy electron diffraction (RHEED). Room temperature photoluminescence (PL) peak intensity of the GaIn0.425NAs/GaAs (6 nm / 20 nm) 3QW is higher than, and the full width at half maximum (FWHM) is comparable to, that of In0.425GaAs/GaAs 3QW, indicating improved optical quality due to strain compensation effects by introducing N to the high indium content InGaAs epilayer. The measured (004) X-ray rocking curve shows clear satellite peaks and Pendellosung fringes, suggesting high film uniformity and smooth interfaces. The cross sectional TEM measurements further reveal that there are no structural defects in such high indium content QWs. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

间伐对仁用杏园土壤理化性质及生长结果的影响

为了探讨密闭仁用杏园衰败的原因,采用常规的方法研究了间伐对仁用杏园土壤养分、水分及树体生长等方面的影响。结果表明:间伐减小了土壤容重,略微增加了土壤孔隙度;间伐显著提高了0-40 cm土层土壤有机质、0-20 cm土层土壤全氮,略微提高了0-20 cm土层土壤全磷;间伐显著提高了0-80 cm土层土壤速效氮、0-40 cm土层土壤速效磷和0-60 cm土层土壤速效钾,且间伐强度越大土壤养分越高;间伐显著提高了0-500cm土层土壤水分,在干旱的春季、夏季优为显著,且间伐强度越大,土壤水分越高;间伐显著促进了仁用杏生长,提高了坐果率和杏仁产量。白于山山区仁用杏间伐后密度应为167~222株/hm2。

黄土高原坡地密植枣园土壤质地与肥力状况分析

采用田间取样与实验室分析相结合的方法,研究了黄土高原坡地密植枣园土壤质地与肥力状况。结果表明,坡地枣园土壤肥力低,氮、磷严重缺乏,钾相对丰富,土壤属于砂壤土,通气性强,保肥、保水性差。0~60 cm土壤有机质含量为1.687~5.002 mg/kg;全氮为0.072~0.316 g/kg;硝酸盐为2.325~16.846 g/kg;铵态氮为1.187~2.146 g/kg,速效磷为0.270~2.480 mg/kg,速效钾为51.9~169.1 mg/kg,并且含量均随剖面向下减少。颗粒组成大部分为粉砂粒,含量一般在65.75%~68.98%;随有机质含量升高,0.25~0.05 mm微团聚体数量呈上升趋势,二者为正相关;<0.05 mm微团聚体含量则逐渐下降,二者呈负相关。黄土高原坡地密植枣园土壤肥力总体水平很低。除了速效钾为中等级外,有机质、全氮、碱解氮、速效磷均为很低等级。

施肥对干旱胁迫下夏玉米根系提水的调节作用研究

以耐旱性玉米品种郑单958号为材料,采用两室分根土培装置,通过时域反射计(TDR)对上下土层土壤含水量进行控制和观测,研究施肥对干旱胁迫条件下玉米根系提水作用的影响.结果表明,玉米根系在土层上干下湿条件下(即上下层土壤存在一定水势差时)存在明显提水作用;玉米根系提水量在整个生育期呈单峰变化,并以吐丝期最大;上层土壤施肥可以调节玉米根系提水作用强弱,整个生育期根系总提水量表现为NP配施>单施P>CK>单施N,NP配施处理全生育期单株提水量(1 948.6 g)分别是单施P处理、CK和单施N处理的1.5倍、3.1倍和3.5倍.玉米整个生育期根系总提水量与收获期不同层次根系干重和体积存在极显著正相关关系,也与其地上部分生物量和籽粒产量呈极显著或显著正相关关系.可见,玉米根系的提水作用强弱因生育期和施肥处理而变化,施肥主要通过影响根系生长来调节其提水作用;在一定水分环境条件下,玉米根系提水作用能促进作物生长,提高其籽粒产量.

黄土丘陵区植被次生演替灌木初期的土壤养分特征

对黄土丘陵区植被次生演替灌木初期的土壤养分特征进行了研究。结果表明:灌木初期土壤养分含量总体上表现出0~20 cm土层明显高于20~60 cm土层,而20~40 cm和40~60 cm间无显著差异。0~60 cm土壤深度内,土壤养分因子含量平均值变化范围分别为:有机质4.66~9.83 g.kg-1,全氮0.33~0.61 g.kg-1,全磷0.49~0.52 g.kg-1,有效氮21.56~41.80 mg.kg-1,有效磷0.73~1.31 mg.kg-1,有效钾58.31~102.01 mg.kg-1。灌木初期的土壤养分条件略好于草本阶段,说明植被演替草本阶段对土壤的培肥作用为群落向灌丛演替阶段发展提供了一个较好的土壤养分环境。灌木初期不同,灌木树种间的土壤养分条件存在一定差异,表明不同灌木树种定居所需适宜的土壤养分条件也不同;灌木初期除土壤全磷外,其他各养分因子间均表现出极显著线性相关关系(P<0.01)。

黄土丘陵沟壑区退耕地土壤种子库对植被恢复的影响

为了探讨土壤种子库对植被恢复的影响,该文在野外调查和室内试验的基础上,采用典范变量分析,研究了黄土丘陵沟壑区退耕地土壤种子库密度、土壤水分和养分、地形因子以及退耕年限对植物群落变化的影响,量化了土壤种子库对植被恢复的贡献。结果表明:影响植物群落变化的因子有土壤水分、速效磷、土壤种子库和坡向;仅用土壤种子库只可解释植物群落变化的32.1%;由于退耕地土壤种子库的优势种主要为猪毛蒿,其植被恢复潜力与速度比较小。黄土丘陵沟壑区退耕地植被恢复需要适度的人为干预,有必要适当引进一些演替后期物种,如白羊草、铁杆蒿、长芒草等物种,以缩短演替时间,加速退耕地植被恢复进程,促进黄土丘陵沟壑区水土流失的防治。

EFFECT OF TOTAL HYDROGEN CONTENT IN SILICON-NITRIDE SENSITIVE FILM ON PERFORMANCE OF ISFET

Quantitative determinations of the hydrogen content and its profile in silicon nitride sensitive films by the method of resonant nuclear reaction have been carried out. At a deposition temperature of 825-degrees-C, hydrogen exists in an LPCVD silicon nitride sensitive film and the hydrogen content on its surface is in the range (8-16) x 10(21) cm-3, depending on the different deposition processes used. This hydrogen content is larger than the (2-3) x 10(21) cm-3 in its interior part, which is homogeneous. Meanwhile, we observe separate peaks for the chemical bonding configurations of Si-H and N-H bonds, indicated by the infrared absorption bands Si-O (1106 cm-1), N-H (1200 cm-1), Si-H-3 (2258 cm-1) and N-H-2 (3349 cm-1), respectively. The worse linear range of the ISFET is caused by the presence of oxygen on the surface of the silicon nitride sensitive film. The existence of chemical bonding configurations of Si-H, N-H and N-Si on its surfaces is favourable for its pH response.