Annealing effect on transport properties of Nd0.67Sr0.33MnO3 thin films

Annealing dependence of the lattice parameter, resistivity, magnetoresistance and thermopower have been studied on Nd0.87Sr0.33MnO3 thin films deposited on LaAlO3 and alumina substrates by pulsed laser ablation. Upon annealing at 800 degrees C and 1000 degrees C the lattice constant of the LaAlO3 film tends toward that of the bulk target due to reduction in oxygen vacancies. This results in a metal-insulator transition at temperatures which increase with progressive annealing along with a decrease in the observed low temperature MR. Using a magnon scattering model we estimate the e(g) bandwidth of the film annealed at 1000 degrees C and show that the magnon contribution to the resistivity is suppressed in a highly oxygen deficient film and gains prominence only upon subsequent annealing. We also show that upon annealing, the polaron concentration and the spin cluster size increases in the paramagnetic phase, using an adiabatic polaron hopping model which takes into account an exchange dependent activation energy above the resistivity peak.

Studies on high‐density nickel zinc ferrite and its magnetic properties using novel hydrazine precursors

Nickel zinc ferrites have been very widely used in the high‐frequency applications. In our present study we have prepared Ni1−x Znx Fe2O4 (0≤x≤1) using novel hydrazinium metal hydrazinecarboxylate precursors. High densities (∼99%) have been obtained for all the ferrites sintered at relatively low temperatures, 1100 °C, in comparison with the conventional method (≥1200 °C). The variation of magnetic properties like magnetic moment, Curie temperature, and permeability with zinc concentration have been studied.

Transport properties of phosphomolybdate and phosphotungstate glasses

The d.c. conductivity of phosphomolybdate and phosphotungstate glasses is discussed. The conductivity of these glasses is due to the hopping of electrons between two valence states (Mo5+ to Mo6+ or W5+ W6+). In some of the glasses, the activation energy itself is found to be a function of temperature. This appears to be due to thermally activated and variable-range hopping mechanisms operating in different temperature regimes. The relation between conductivity and the [M5+]/[Mtotal](M ≡ Mo, W) ratio does not show any systematic variation. This anomaly can be understood using the structural models of these glasses. In contrast, Mott's theory and the Triberis and Friedman model have been used to obtain conductivity parameters such as the percolation distance Rij and 2agrRij (agr is the tunnelling probability). The conductivity parameter 2agrRij is quite useful to resolve the controversy regarding the tunnelling term exp(2agrRij) existing in the literature. For low values of 2agrRij, it is shown that the exp (2agrRij) term is very significant.

Ultrafine Mn---Zn ferrites: Preparation and properties

High density Mn-Zr ferrites have been extensively used in recording head applications. The properties like permeability, los~, etc., depend on the preparation method. The :roperfies play major role in selecting these materials for various applications.In this present work., we have prepared Mn-Zn ferrites musing metal hydrazine carboxylate precursors (N2Hs)3Mn0.sZn0.sFe2(N2H3COO)3"3H20. The precursor decomposes at very low temperature (~250°C) to form ultrafine Mno.sZn0.sFe204. The partic~,e size permeability spectrum, microstructure and magnetic properties will be discussed in this paper.

Nonadiabatic charge pumping by oscillating potentials in one dimension: Results for infinite system and finite ring

We study charge pumping when a combination of static potentials and potentials oscillating with a time period T is applied in a one-dimensional system of noninteracting electrons. We consider both an infinite system using the Dirac equation in the continuum approximation and a periodic ring with a finite number of sites using the tight-binding model. The infinite system is taken to be coupled to reservoirs on the two sides which are at the same chemical potential and temperature. We consider a model in which oscillating potentials help the electrons to access a transmission resonance produced by the static potentials and show that nonadiabatic pumping violates the simple sin phi rule which is obeyed by adiabatic two-site pumping. For the ring, we do not introduce any reservoirs, and we present a method for calculating the current averaged over an infinite time using the time evolution operator U(T) assuming a purely Hamiltonian evolution. We analytically show that the averaged current is zero if the Hamiltonian is real and time-reversal invariant. Numerical studies indicate another interesting result, namely, that the integrated current is zero for any time dependence of the potential if it is applied to only one site. Finally we study the effects of pumping at two sites on a ring at resonant and nonresonant frequencies, and show that the pumped current has different dependences on the pumping amplitude in the two cases.

Dielectric properties of poly(vinylidene luoride)/CaCu3Ti4O12 nanocrystal composite thick films

The poly(vinylidene fluoride)/CaCu3Ti4O12 (CCTO) nanocrystal composite films (thickness approximate to 85 mu m) with relatively high dielectric permittivity (90 at 100 Hz) were prepared by the solution casting followed by spin coating technique. The structural, the microstructural and the dielectric properties of the composites were studied using X-ray diffraction, Scanning Electron Microscope, and Impedance analyzer respectively. The effective dielectric permittivity (e(eff)) of the composite increased with increase in the volume fraction of CCTO at all the frequencies (100 Hz to 1 MHz) under investigation. The room temperature dielectric permittivity which is around 90 at 100 Hz, has increased to about 290 at 125 degrees C (100 Hz). These results may be exploited in the development of high energy density capacitors.

Elastic properties of PbS-As2S3 glasses

The temperature dependence of the longitudinal and shear ultrasound wave velocities in (As2S3)1-x(PbS)x glasses has been determined from 77 to 300K using a pulse echo interferometer. Elastic constants of the prepared glasses at room temperature have been computed from the experimental data. Both longitudinal and shear ultrasound wave velocities in these glasses show a linear temperature dependence with a negative temperature coefficient.

Effect of sintering on optical, structural and photoluminescence properties of ZnO thin films prepared by sol-gel process

Zinc oxide (ZnO) thin films have been deposited on glass substrates via sol-gel technique using zinc acetate dihydrate as precursor by spin coating of the sol at 2000 rpm. Effects of annealing temperature on optical, structural and photo luminescence properties of the deposited ZnO films have been investigated. The phase transition from amorphous to polycrystalline hexagonal wurtzite structure was observed at an annealing temperature of 400 degrees C. An average transmittance of 87% in the visible region has been obtained at room temperature. The optical transmittance has slightly increased with increase of annealing temperature. The band gap energy was estimated by Tauc's method and found to be 3.22 eV at room temperature. The optical band gap energy has decreased with increasing annealing temperature. The photoluminescence (PL) intensity increased with annealing temperature up to 200 degrees C and decreased at 300 degrees C. (c) 2010 Elsevier B.V. All rights reserved.

Effect of Storage Temperatures on the Mechanical Properties of the Composite Solid Propellants

Accelerated ageing studies for three composite propellant formulations, namely polystyrene (PS)/ ammonium perchlorate (AP), polymethylmethacrylate (PMMA)/AP and poly phenol formaldehyde (PPF)/AP have been carried out in the temperature range of 55-125°C. Measurements of the ultimate compression strength (Uc) and isothermal decomposition rate (TD rate) were monitored as a function of storage time and temperature. The change in Uc was found to be linearly dependent on the change in TD rate irrespective of the propellant systems. Analysis of the results further revealed that the cause of ageing for both Uc and burning rate (r) is the thermal decomposition of the propellant. The safe-life for the change in mechanical properties was found to be higher compared to the change in r for PS and PMMA based propellants.

Thermodynamic partial properties of Na2O in Nasicon solid solution, Na1+xZr2SixP3-xO12

The thermodynamic activity of sodium oxide (Na2O) in the Nasicon solid solution series, Na1+xZr2SixO12, has been measured in the temperature range 700�1100 K using solid state galvanic cells: Pt|CO2 + O2|Na2CO3?Na1+xZr2SixP3-xO12?(Y2O3)ZrO2?In + In2O3|Ta, Pt for 1 = ? = 2.5, and Pt?CO2 + O2?Na2CO3?ß-alumina?Na1+xZr2SixP3-xO12?Ar + O2?Pt for x = 0, 0.5, 2.5, and 3. The former cell, where the Nasicon solid solution is used as an electrolyte along with yttria-stabilized zirconia, is well suited for Nasicon compositions with high ionic conductivity. In the latter cell, ß-alumina is used as an electrolyte and the Nasicon solid solution forms an electrode. The chemical potential of Na2O is found to increase monotonically with x at constant temperature. The partial entropy of Na2O decreases continuously with x. However, the partial enthalpy exhibits a maximum at x = 2. This suggests that the binding energy is minimum at the composition where ionic conductivity and cell volume have maximum values.

Dielectric properties of electron irradiated PbZrO3 thin films

The present paper deals with the study of the effects of electron (8 MeV) irradiation on the dielectric and ferroelectric properties of PbZrO3 thin films grown by sol-gel technique. The films were (0.62 mu m thick) subjected to electron irradiation using Microtron accelerator (delivered dose 80, 100, 120 kGy). The films were well crystallized prior to and after electron irradiation. However, local amorphization was observed after irradiation. There is an appreciable change in the dielectric constant after irradiation with different delivered doses. The dielectric loss showed significant frequency dispersion for both unirradiated and electron irradiated films. T (c) was found to shift towards higher temperature with increasing delivered dose. The effect of radiation induced increase of E >'(T) is related to an internal bias field, which is caused by radiation induced charges trapped at grain boundaries. The double butterfly loop is retained even after electron irradiation to the different delivered doses. The broader hysteresis loop seems to be related to radiation induced charges causing an enhanced space charge polarization. Radiation-induced oxygen vacancies do not change the general shape of the AFE hysteresis loop but they increase P (s) of the hysteresis at the electric field forced AFE to FE phase transition. We attribute the changes in the dielectric properties to the structural defects such as oxygen vacancies and radiation induced charges. The shift in T (C), increase in dielectric constant, broader hysteresis loop, and increase in P (r) can be related to radiation induced charges causing space charge polarization. Double butterfly and hysteresis loops were retained indicative of AFE nature of the films.

Unsteady laminar compressible boundary-layer flow at a three-dimensional stagnation point

Unsteady laminar compressible boundary-layer flow with variable properties at a three-dimensional stagnation point for both cold and hot walls has been studied for the case when the velocity of the incident stream varies arbitrarily with time. The partial differential equations governing the flow have been solved numerically using an implicit finite-difference scheme. Computations have been carried out for two particular unsteady free-stream velocity distributions: (i) an accelerating stream and (ii) a fluctuating stream. The results indicate that the variation of the density-viscosity product across the boundary layer, the wall temperature and the nature of stagnation point significantly affect the skin friction and heat transfer.

Anisotropic properties of the layered semiconductor in Te

Anisotropic properties of the Bridgman grown layered semiconductor p-InTe were studied by analyzing the temperature dependence of electrical conductivity and Hall mobility parallel and perpendicular to the layer planes. The mobilities were μamalgamation or coproduct = 50–60 cm2V−1 sec−1 and μperpendicular = 10–15 cm2V−1sec−1 and varied as μ ≈ Tn where n = 1.43 due to impurity scattering. Pressure-induced semiconductor-metal transition occurred at about 50 kbar. The pressure coefficient of resistance was 3 times larger in the direction perpendicular to the layer plane due to the difference between inter and intra-planar bonding.

Nanomechanical properties of silicon surfaces nanostructured by excimer laser

Excimer laser irradiation at ambient temperature has been employed to produce nanostructured silicon surfaces. Nanoindentation was used to investigate the nanomechanical properties of the deformed surfaces as a function of laser parameters, such as the angle of incidence and number of laser pulses at a fixed laser fluence of 5 J cm(-2). A single-crystal silicon 311] surface was severely damaged by laser irradiation and became nanocrystalline with an enhanced porosity. The resulting laser-treated surface consisted of nanometer-sized particles. The pore size was controlled by adjusting the angle of incidence and the number of laser pulses, and varied from nanometers to microns. The extent of nanocrystallinity was large for the surfaces irradiated at a small angle of incidence and by a high number of pulses, as confirmed by x-ray diffraction and Raman spectroscopy. The angle of incidence had a stronger effect on the structure and nanomechanical properties than the number of laser pulses.

Performance study of high operating temperature HgCdTe mid wave infrared detector through numerical modeling

The design of present generation uncooled Hg1-xCdxTe infrared photon detectors relies on complex heterostructures with a basic unit cell of type (n) under bar (+)/pi/(p) under bar (+). We present an analysis of double barrier (n) under bar (+)/pi/(p) under bar (+) mid wave infrared (x = 0.3) HgCdTe detector for near room temperature operation using numerical computations. The present work proposes an accurate and generalized methodology in terms of the device design, material properties, and operation temperature to study the effects of position dependence of carrier concentration, electrostatic potential, and generation-recombination (g-r) rates on detector performance. Position dependent profiles of electrostatic potential, carrier concentration, and g-r rates were simulated numerically. Performance of detector was studied as function of doping concentration of absorber and contact layers, width of both layers and minority carrier lifetime. Responsivity similar to 0.38 A W-1, noise current similar to 6 x 10(-14) A/Hz(1/2) and D* similar to 3.1 x 10(10)cm Hz(1/2) W-1 at 0.1 V reverse bias have been calculated using optimized values of doping concentration, absorber width and carrier lifetime. The suitability of the method has been illustrated by demonstrating the feasibility of achieving the optimum device performance by carefully selecting the device design and other parameters. (C) 2010 American Institute of Physics. doi:10.1063/1.3463379]