Reorganização do controlo postural do tronco e a sua influência na distribuição de carga na posição ortostática em indivíduos com Acidente Vascular Encefálico

Introdução: O Acidente Vascular Encefálico (AVE) consiste numa das primeiras causas de mortalidade e morbilidade em Portugal. Esta lesão do Sistema Nervoso Central (SNC) desencadeia alterações ao nível do controlo postural (CP), que interferem com a recuperação funcional dos indivíduos. Objetivo: Deste modo, torna-se premente descrever as alterações do CP do tronco através da análise dos alinhamentos dos segmentos corporais do tronco no grupo de indivíduos selecionados, face à aplicação de um programa de intervenção baseado nos princípios do Conceito de Bobath. Metodologia: Estudo de série de casos, em seis indivíduos com alterações neuromotoras decorrentes de AVE, os quais foram avaliados antes e após o plano de intervenção segundo a abordagem baseada nos princípios do Conceito de Bobath, através do registo observacional, da Classificação Internacional de Funcionalidade Incapacidade e Saúde (CIF), da utilização do Software de Avaliação Postural (SAPO) e da Plataforma de Pressões da Emed (PPE), modelo AT. Os dados recolhidos foram trabalhados em função do valor médio através do software Excel. Resultados: A análise do SAPO, na posição ortostática observam-se mudanças quer na vista posterior quer nas laterais, indicando uma maior simetria entre hemitroncos, e mudanças nos alinhamentos verticais indicando uma maior aproximação dos 180º. Na PPE observam-se os valores da área plantar, da pressão plantar média e do centro de pressão, tendem globalmente a uma maior semelhança e simetria. Quanto à CIF também se verificou uma diminuição da restrição na participação e limitação na atividade. Conclusão: A intervenção baseada no processo de raciocínio clínico aparenta introduzir os estímulos necessários à reorganização funcional do SNC lesado, produzindo melhorias ao nível dos alinhamentos dos segmentos corporais e desta forma melhorar a atividade muscular.

Estudo da divergência entre duas vias que curvam em sentidos contrários

Trabalho Final de Mestrado para obtenção do grau de Mestre em Engenharia Civil na Área de Especialização de Vias de Comunicação e Transportes

Diagnóstico de estruturas de madeira em serviço num palacete do século XIX

Dissertação para obtenção do grau de Mestre em Engenharia Civil na Área de Especialização em Edificações

O papel das competências emocionais no processo de autoeficácia académica em crianças do 1.º Ciclo do Ensino Básico

Dissertação de Mestrado, Psicologia da Educação, especialidade em Contextos Educativos, 3 de Março de 2016, Universidade dos Açores.

Como convive a interpretação com os aspectos não verbais da comunicação

Neste artigo procuramos abordar a importância da comunicação não verbal na interpretação e as dificuldades provenientes da sua articulação com a linguagem verbal, neste âmbito. Apresenta-se um elenco seleccionado de recursos não verbais considerados essenciais e frequentes com os quais o profissional desta área se pode confrontar e sugerem-se algumas formas de como/quando os integrar na interpretação.

Estudo económico-financeiro sobre a implementação de sistemas de uso eficiente da água numa habitação

Trabalho de Projecto de Natureza Científica para obtenção do grau de Mestre em Engenharia Civil

Normalização dos trabalhos de demolição: proposta de elaboração de um modelo de um plano de demolição

Trabalho Final de Mestrado para obtenção do grau de Mestre em Engenharia Civil Especialização em Edificações

Qual a função dos corpora na descrição do léxico?

Neste artigo procuramos reflectir sobre a função dos corpora na observação e análise de fenómenos de uma língua natural bem como na criação de novos recursos de exploração linguísticos que as tecnologias de informação têm vindo a potenciar e a tornar mais eficaz.

O valor da interacção verbal

Neste artigo procuramos reflectir sobre a dimensão dos elementos para- -linguísticos e extra-linguísticos na actividade conversacional e no papel que detêm na gestão deste espaço interlocutivo.

Effects of sulphurization time on Cu2ZnSnS4 absorbers and thin films solar cells obtained from metallic precursors

We report the results of a study of the sulphurization time effects on Cu2ZnSnS4 absorbers and thin film solar cells prepared from dc-sputtered tackedmetallic precursors. Three different time intervals, 10 min, 30min and 60 min, at maximum sulphurization temperature were considered. The effects of this parameter' change were studied both on the absorber layer properties and on the final solar cell performance. The composition, structure, morphology and thicknesses of the CZTS layers were analyzed. The electrical characterization of the absorber layer was carried out by measuring the transversal electrical resistance of the samples as a function of temperature. This study shows an increase of the conductivity activation energy from 10 meV to 54meV for increasing sulphurization time from 10min to 60min. The solar cells were built with the following structure: SLG/Mo/CZTS/CdS/i-ZnO/ZnO:Al/Ni:Al grid. Several ac response equivalent circuit models were tested to fit impedance measurements. The best results were used to extract the device series and shunt resistances and capacitances. Absorber layer's electronic properties were also determined using the Mott–Schottky method. The results show a decrease of the average acceptor doping density and built-in voltage, from 2.0 1017 cm−3 to 6.5 1015 cm−3 and from 0.71 V to 0.51 V, respectively, with increasing sulphurization time. These results also show an increase of the depletion region width from approximately 90 nm–250 nm.

Cu2ZnSnS4 absorber layers obtained through sulphurization of metallic precursors: Graphite box versus sulphur flux

In this work we employed a hybrid method, combining RF-magnetron sputtering with evaporation, for the deposition of tailor made metallic precursors, with varying number of Zn/Sn/Cu (ZTC) periods and compared two approaches to sulphurization. Two series of samples with 1×, 2× and 4× ZTC periods have been prepared. One series of precursors was sulphurized in a tubular furnace directly exposed to a sulphur vapour and N2+5% H2 flux at a pressure of 5.0×10+4 Pa. A second series of identical precursors was sulphurized in the same furnace but inside a graphite box where sulphur pellets have been evaporated again in the presence of N2+5% H2 and at the same pressure as for the sulphur flux experiments. The morphological and chemical analyses revealed a small grain structure but good average composition for all three films sulphurized in the graphite box. As for the three films sulphurized in sulphur flux grain growth was seen with the increase of the number of ZTC periods whilst, in terms of composition, they were slightly Zn poor. The films' crystal structure showed that Cu2ZnSnS4 is the dominant phase. However, in the case of the sulphur flux films SnS2 was also detected. Photoluminescence spectroscopy studies showed an asymmetric broad band emission whichoccurs in the range of 1–1.5 eV. Clearly the radiative recombination efficiency is higher in the series of samples sulphurized in sulphur flux. We have found that sulphurization in sulphur flux leads to better film morphology than when the process is carried out in a graphite box in similar thermodynamic conditions. Solar cells have been prepared and characterized showing a correlation between improved film morphology and cell performance. The best cells achieved an efficiency of 2.4%.

Hopping conduction and persistent photoconductivity in Cu2ZnSnS4 thin films

The temperature dependence of electrical conductivity and the photoconductivity of polycrystalline Cu2ZnSnS4 were investigated. It was found that at high temperatures the electrical conductivity was dominated by band conduction and nearest-neighbour hopping. However, at lower temperatures, both Mott variable-range hopping (VRH) and Efros–Shklovskii VRH were observed. The analysis of electrical transport showed high doping levels and a large compensation ratio, demonstrating large degree of disorder in Cu2ZnSnS4. Photoconductivity studies showed the presence of a persistent photoconductivity effect with decay time increasing with temperature, due to the presence of random local potential fluctuations in the Cu2ZnSnS4 thin film. These random local potential fluctuations cannot be attributed to grain boundaries but to the large disorder in Cu2ZnSnS4.

CuxSnSx+1 (x = 2, 3) thin films grown by sulfurization of metallic precursors deposited by dc magnetron sputtering

We report the results of the growth of Cu-Sn-S ternary chalcogenide compounds by sulfurization of dc magnetron sputtered metallic precursors. Tetragonal Cu2SnS3 forms for a maximum sulfurization temperature of 350 ºC. Cubic Cu2SnS3 is obtained at sulfurization temperatures above 400 ºC. These results are supported by XRD analysis and Raman spectroscopy measurements. The latter analysis shows peaks at 336 cm-1, 351 cm-1 for tetragonal Cu2SnS3, and 303 cm-1, 355 cm-1 for cubic Cu2SnS3. Optical analysis shows that this phase change lowers the band gap from 1.35 eV to 0.98 eV. At higher sulfurization temperatures increased loss of Sn is expected in the sulphide form. As a consequence, higher Cu content ternary compounds like Cu3SnS4 grow. In these conditions, XRD and Raman analysis only detected orthorhombic (Pmn21) phase (petrukite). This compound has Raman peaks at 318 cm-1, 348 cm-1 and 295 cm-1. For a sulfurization temperature of 450 ºC the samples present a multi-phase structure mainly composed by cubic Cu2SnS3 and orthorhombic (Pmn21) Cu3SnS4. For higher temperatures, the samples are single phase and constituted by orthorhombic (Pmn21) Cu3SnS4. Transmittance and reflectance measurements were used to estimate a band gap of 1.60 eV. For comparison we also include the results for Cu2ZnSnS4 obtained using similar growth conditions.

Influence of selenization pressure on the growth of Cu2ZnSnSe4 films from stacked metallic layers

Cu2ZnSnSe4 (CZTSe) is a p-type semiconductor with a high absorption coefficient, 104 to 105 cm-1, and is being seen as a possible replacement for Cu(In,Ga)Se2 in thin film solar cells. Yet, there are some fundamental properties of CZTSe that are not well known, one of them is its band gap. In order to resolve its correct value it is necessary to improve the growth conditions to ensure that single phase crystalline thin films are obtained. One of the problems encountered when growing CZTSe is the loss of Sn through evaporation of SnSe. Stoichiometric films are then difficult to obtain and usually there are other phases present. One possible way to overcome this problem is to increase the pressure of growth of CZTSe. This can be done by introducing an atmosphere of an inert gas like Ar or N2. In this work we report the results of morphological, structural and optical studies of the properties of CZTSe thin films grown by selenization of DC magnetron sputtered metallic layers under different Ar pressures. The films are analysed by SEM/EDS, Raman scattering and XRD.

Detection of ZnS phases in CZTS thin-films by EXAFS

Copper zinc tin sulfide (CZTS) is a promising Earthabundant thin-film solar cell material; it has an appropriate band gap of ~1.45 eV and a high absorption coefficient. The most efficient CZTS cells tend to be slightly Zn-rich and Cu-poor. However, growing Zn-rich CZTS films can sometimes result in phase decomposition of CZTS into ZnS and Cu2SnS3, which is generally deleterious to solar cell performance. Cubic ZnS is difficult to detect by XRD, due to a similar diffraction pattern. We hypothesize that synchrotron-based extended X-ray absorption fine structure (EXAFS), which is sensitive to local chemical environment, may be able to determine the quantity of ZnS phase in CZTS films by detecting differences in the second-nearest neighbor shell of the Zn atoms. Films of varying stoichiometries, from Zn-rich to Cu-rich (Zn-poor) were examined using the EXAFS technique. Differences in the spectra as a function of Cu/Zn ratio are detected. Linear combination analysis suggests increasing ZnS signal as the CZTS films become more Zn-rich. We demonstrate that the sensitive technique of EXAFS could be used to quantify the amount of ZnS present and provide a guide to crystal growth of highly phase pure films.