Room-temperature emission at telecom wavelengths from silicon photonic crystal nanocavities

Strongly enhanced light emission at wavelengths between 1.3 and 1.6 μm is reported at room temperature in silicon photonic crystal (PhC) nanocavities with optimized out-coupling efficiency. Sharp peaks corresponding to the resonant modes of PhC nanocavities dominate the broad sub-bandgap emission from optically active defects in the crystalline Si membrane. We measure a 300-fold enhancement of the emission from the PhC nanocavity due to a combination of far-field enhancement and the Purcell effect. The cavity enhanced emission has a very weak temperature dependence, namely less than a factor of 2 reduction between 10 K and room temperature, which makes this approach suitable for the realization of efficient light sources as well as providing a quick and easy tool for the broadband optical characterization of silicon-on-insulator nanostructures. © 2011 American Institute of Physics.

~(14)C标记1,2,7,8-TCDD在鲤体内分布及代谢的初步研究

利用14C标记1,2,7,8-四氯代二苯并二噁英(1,2,7,8Tetrachloro[U—14C]dibenzodioxin,14C1,2,7,8TCDD)初步研究了其在鲤体内的分布和代谢规律。14C1,2,7,8-TCDD溶解于丙酮/植物油中,腹腔暴露。暴露1、2、4、8、12d后取样,肝脏、胆汁、腹腔脂肪等消化制样后用液闪仪测量放射性活度。肝脏和胆汁内的放射性活度同步变化,都是第8d达到峰值后下降。腹腔脂肪内1—2d放射性明显高于随后取样的样品。肝和腹腔脂肪的分布量之比呈现“S”型变化趋势。暴露4d

利用微量热法研究Cd~(2+)和Cu~(2+)对嗜热四膜虫(Tetrahymena thermophila)的毒性效应

利用微量热法研究Cd2 + 和Cu2 + 对嗜热四膜虫BF5(TetrahymenathermophilaBF5)生长代谢毒性效应 ,结果表明 :①低浓度的Cd2 + (0～ 0 .4mgL-1)和Cu2 + (0～ 10mgL-1)对四膜虫的生长有促进作用 ,而高浓度的Cd2 + (0 .8～ 3.2mgL-1)和Cu2 + (2 0～ 2 0 0mgL-1)则产生抑制作用 ;②Cd2 + 和Cu2 + 的半抑制浓度IC50 分别为 2 .0 4mg/L和15 5 .5mg/L ;③联合毒性为协同作用

草鱼、中华鳖脾细胞培养上清液IL-2物质的检测

用刀豆蛋白A(ConA)刺激诱导草鱼和中华鳖脾细胞 ,收集细胞培养上清液 ,用小鼠胸腺细胞增殖试验和对小鼠L92 9细胞系杀伤试验检测上清液中白细胞介素 2 (简称IL 2 )活性。结果表明 :草鱼、中华鳖脾细胞培养上清液中有IL 2样活性物质 ,这种物质使小鼠的胸腺细胞3H TdR掺入量明显增加 ,在相同效靶比的条件下对小鼠L92 9细胞系杀伤率也显著增强 ,这种IL 2活性均能被抗人rIL 2血清所抑制。中华鳖脾细胞培养上清液 (含IL 2 )对中华鳖胸腺细胞也有较明显的促增殖作用并能消除兔抗中华鳖胸

Cu~(2+)、Zn~(2+)诱导稀有鮈鲫应激蛋白质的研究

以稀有鲫为材料 ,研究了应激蛋白质作为生物学指标的敏感性。结果表明 ,在无可观察效应浓度下 ,经 5d亚慢性胁迫暴露 ,以Cu2 +为胁迫因子 ,稀有鲫被诱导出约 54KDa的应激蛋白质 ;以Zn2 +为胁迫因子 ,稀有鲫被诱导出约 94KDa ,67KDa和 40KDa的应激蛋白质。应激蛋白质有可能成为一种生物学指标运用于生态风险性早期预警。

中国枝角类2新记录种的记述(甲壳纲:双甲目)

描述了２种枝角类：丛刺尖额氵蚤和短削盘肠氵蚤的形态鉴别特征。这２种枝角类是中国的首次记录。

氯霉素在健康、沙门氏菌病和肝损害小型猪体内的药代动力学研究

本文研究了氯霉素单次静脉注射后,在健康、沙门氏菌病和肝损害小型猪体内的药代动力学,以观察疾病对氯霉素在动物体内变化过程的影响.从颈静脉导管采血.药物浓度用高效液相色谱法测定.结果表明,沙门氏菌感染和肝损伤后。氯霉素的动力学发生显著改变.在健康动物体内为一室开放模型.消除半衰期(l_(1/2)β)为1.1h.而在两种疾病动物体内则为二室开放模型,消除半衰期(l(1/2)β)分别为1.68h和1.63h。极显著延长(p<0.01).最后根据有关动力学参数制定了相应的给药方案.

Growth kinetics of 1-2 mm and 3-4 mm colonies of Nostoc sphaeroides (Cyanophyta) in outdoor culture

Nostoc sphaeroides Kutzing was cultivated in paddlewheel-driven raceway ponds and the growth kinetics of 1-2 mm and 3-4 mm colonies of N. sphaeroides was studied. The biomass productivities in 2.5 m(2) raceway ponds inoculated with 1-2 mm and 3-4 mm colonies were 5.2 and 0.25 g dry wt m(-2) stop d(-1), respectively. Furthermore, differently sized colonies showed different relative water content, total soluble carbohydrates, chlorophyll a content and density of filaments. This is the first report on mass culture of N. sphaeroides under outdoor conditions.

Macrozoobenthos in 2 shallow mesotrophic Chinese lakes with contrasting sources of primary production

Comparative studies on macrozoobenthos were done in 2 shallow mesotrophic lakes in the middle basins of the Yangtze River, China: Lake Biandantang where macrophytes were abundant, and Lake Houhu where macrophytes were scarce Samples were taken monthly at 4 stations in each lake from April 1997 to March 1999, and a total of 67 and 31 tara of macrozoobenthos were recorded in Lake Biandantang and Lake Houhu, respectively. Both annual mean density and biomass of macrozoobenthos were higher in Lake Biandantang than in Lake Houhu: 780 vs 532 indivials/m(2) and 37.1 vs 25.9 g wet mass/m(2), respectively. Abundance of functional feeding groups followed the order: scraper > collector > predator > shredder in Lake Biandantang, and collector > predator > scraper > shredder in Lake Houhu. Only 1 density peak occurred from winter to early spring in Lake Houhu; however, in Lake Biandantang, there were 2 peaks, the winter peak and spring peak. K-dominance curves and Shannon-Wiener, Simpson, and Margelef indices indicated that macrozoobenthos were more diverse in Lake Biandantang than in Lake Houhu Our study suggests that, in shallow lakes, submerged macrophytes are essential for the maintenance of biodiversity of macrozoobenthos mainly because the macrophytes increase habit heterogeneity and availability of suitable food, and may also decrease predation by fish on the macrozoobenthos.

Photoluminescence study of InGaN/GaN quantum dots grown on passivated GaN surface

We have measured photoluminescence (PL) and time-resolve photoluminescence (TRPL) from InGaN/GaN quantum dots (QDs) grown on passivated GaN surfaces by metalorganic chemical vapor deposition (MOCVD). Strong PL emission was observed from the QDs structure even at room temperature. By comparing the PL and TRPL dependence on temperature, a significant difference between the QD and wetting layer emissions was revealed. The QD emission is characterized by a strong exciton localization effect, which leads to a larger thermal activation energy, a nearly constant radiative lifetime independent of temperature and an unusual temperature behavior of the PL peak energy. (C) 2003 Elsevier B.V. All rights reserved.

Optical properties of phase-separated GaN1-xPx alloys grown by light-radiation heating metal-organic chemical vapour deposition

Based on the results of the temperature-dependent photoluminescence (PL) measurements, the broad PL emission in the phase-separated GaNP alloys with P compositions of 0.03, 0.07, and 0.15 has investigated. The broad PL peaks at 2.18, 2.12 and 1.83 eV are assigned to be an emission from the optical transitions from several trap levels, possibly the iso-electronic trap levels related to nitrogen. With the increasing P composition (from 0.03 to 0.15), these iso-electronic trap levels are shown to become resonant with the conduction band of the alloy and thus optically inactive, leading to the apparent red shift (80-160meV) of the PL peak energy and the trend of the red shift is strengthened. No PL emission peak is observed from the GaN-rich GaNP region, suggesting that the photogenerated carriers in the GaN-rich GaNP region may recombine with each other via non-radiation transitions.

Structural and optical properties of InAs/GaAs quantum dots emitting at 1.5 mu m

We have demonstrated 1.5 mum light emission from InAs quantum dots (QDs) capped with a thin GaAs layer. The extension of the emission wavelength can be assigned to the large QD height. We also investigate the effect of growth interruption on the PL properties and the shape of InAs QDs fabricated by migration-enhanced growth (MEG). Contrary to expectation, we observed a remarkable blueshift of the emission energy with the growth interruption in MEG mode. Detailed investigations reveal that the blueshift is related to the reduced island height with the growth interruption, which is confirmed by reflection high-energy electron diffraction (RHEED) patterns and atomic force microscopy (AFM) measurement results. Accordingly, the structure changes of the islands are interpreted in terms of thermodynamic and kinetic theories. (C) 2004 Elsevier B.V. All rights reserved.

Spatial distribution of deep level defects in crack-free AlGaN grown on GaN with a high-temperature AlN interlayer

The deep level luminescence of crack-free Al0.25Ga0.75N layers grown on a GaN template with a high-temperature grown AlN interlayer has been studied using spatially resolved cathodoluminescence (CL) spectroscopy. The CL spectra of Al0.25Ga0.75N grown on a thin AlN interlayer present a deep level aquamarine luminescence (DLAL) band at about 2.6 eV and a deep level violet luminescence (DLVL) band at about 3.17 eV. Cross-section line scan CL measurements on a cleaved sample edge clearly reveal different distributions of DLAL-related and DLVL-related defects in AlGaN along the growth direction. The DLAL band of AlGaN is attributed to evolve from the yellow luminescence band of GaN, and therefore has an analogous origin of a radiative transition between a shallow donor and a deep acceptor. The DLVL band is correlated with defects distributed near the GaN/AlN/AlGaN interfaces. Additionally, the lateral distribution of the intensity of the DLAL band shows a domainlike feature which is accompanied by a lateral phase separation of Al composition. Such a distribution of deep level defects is probably caused by the strain field within the domains. (c) 2006 American Institute of Physics.

High-power and low-threshold-current-density GaAs/AlGaAs quantum cascade lasers

We report on the realization of GaAs/AlGaAs quantum cascade lasers with an emission wavelength of 9.1 mu m above the liquid nitrogen temperature. With optimal current injection window and ridge width of 24 and 60 mu m respectively, a peak output power more than 500 mW is achieved in pulsed mode operation. A low threshold current density J(th) = 2.6 kA/cm(2) gives the devices good lasing characteristics. In a drive frequency of 1 kHz, the laser operates up to 20% duty cycle.

Interface effect on emission properties of Er-doped Si nanoclusters embedded in SiO2 prepared by magnetron sputtering

Er-doped Si nanoclusters embedded in SiO2 (NCSO) films were prepared by radio frequency magnetron sputtering on either silicon or quartz substrates. A 1.16 mu m (1.08 eV) photoluminescence (PL) peak was observed from an Er-doped NCSO film deposited on a Si substrate. This 1.16 mu m peak is attributed to misfit dislocations at the NCSO/Si interface. The emission properties of the 1.16 mu m peak and its correlation with the Er3+ emission (1.54 mu m) have been studied in detail. The observed behavior suggests that the excitation mechanism of the 1.16 mu m PL is in a fashion similar to that shown for Er-doped Si nanoclusters embedded in a SiO2 matrix. (C) 2006 American Institute of Physics.