Structural and optical properties of InAs/GaAs quantum dots emitting at 1.5 mu m


Autoria(s): Gong Z; Fang ZD; Miao ZH; Niu ZC; Feng SL
Data(s)

2005

Resumo

We have demonstrated 1.5 mum light emission from InAs quantum dots (QDs) capped with a thin GaAs layer. The extension of the emission wavelength can be assigned to the large QD height. We also investigate the effect of growth interruption on the PL properties and the shape of InAs QDs fabricated by migration-enhanced growth (MEG). Contrary to expectation, we observed a remarkable blueshift of the emission energy with the growth interruption in MEG mode. Detailed investigations reveal that the blueshift is related to the reduced island height with the growth interruption, which is confirmed by reflection high-energy electron diffraction (RHEED) patterns and atomic force microscopy (AFM) measurement results. Accordingly, the structure changes of the islands are interpreted in terms of thermodynamic and kinetic theories. (C) 2004 Elsevier B.V. All rights reserved.

Identificador

http://ir.semi.ac.cn/handle/172111/8906

http://www.irgrid.ac.cn/handle/1471x/63983

Idioma(s)

英语

Fonte

Gong, Z; Fang, ZD; Miao, ZH; Niu, ZC; Feng, SL .Structural and optical properties of InAs/GaAs quantum dots emitting at 1.5 mu m ,JOURNAL OF CRYSTAL GROWTH,JAN 15 2005,274 (1-2):78-84

Palavras-Chave #半导体物理 #1.5 mu m light
Tipo

期刊论文