Novel triplexing-filter design using silica-based direction coupler and an arrayed waveguide grating

A new triplexing filter based on a silica direction coupler and an arrayed waveguide grating is presented. Using a combination of a direction coupler and an arrayed waveguide grating, a 1310-nm channel is multiplexed and 1490- and 1550-nm channels are demultiplexed for fiber-to-the-home. The direction coupler is used to coarsely separate the 1310-nm channel from the 1490- and 1550-nm channels. Subsequently, an arrayed waveguide grating is used to demultiplex the 1490- from 1550-nm channel. The simulated spectra show the 1-dB bandwidth of 110 nm for the 1310-nm channel and 20 and 20.5 nm for the 1490- and 1550-nm channels. The insertion loss is only 0.15 dB for 1310 nm and 5 dB for 1490 and 1550 nm. The crosstalk between the 1490- and 1550-nm channels was less than -35 dB. (C) 2009 Society of Photo-Optical Instrumentation Engineers. [DOI 10.1117/1.3065508]

Spin splitting of conduction subbands in Al0.3Ga0.7As/GaAs/AlxGa1-x As/Al0.3Ga0.7As step quantum wells

By means of the transfer matrix technique, interface-induced Rashba spin splitting of conduction subbands in Al0.3Ga0.7As/GaAs/AlxGa1-xAs/Al0.3Ga0.7As step quantum wells which contain internal structure inversion asymmetry introduced by the insertion of AlxGa1-xAs step potential is investigated theoretically in the absence of electric field and magnetic field. The dependence of spin splitting on the well width, step width and Al concentration is investigated in detail. We find that the sign of the first excited subband spin splitting changes with well width and step width, and is opposite to that of the ground subband under certain conditions. The sign and strength of the spin splitting are shown to be sensitive to the components of the envelope function at three interfaces. Copyright (C) EPLA, 2009

The effect of single AlGaN interlayer on the structural properties of GaN epilayers grown on Si (111) substrates

High-quality and nearly crack-free GaN epitaxial layer was obtained by inserting a single AlGaN interlayer between GaN epilayer and high-temperature AlN buffer layer on Si (111) substrate by metalorganic chemical vapor deposition. This paper investigates the effect of AlGaN interlayer on the structural proper-ties of the resulting GaN epilayer. It confirms from the optical microscopy and Raman scattering spectroscopy that the AlGaN interlayer has a remarkable effect on introducing relative compressive strain to the top GaN layer and preventing the formation of cracks. X-ray diffraction and transmission electron microscopy analysis reveal that a significant reduction in both screw and edge threading dislocations is achieved in GaN epilayer by the insertion of AlGaN interlayer. The process of threading dislocation reduction in both AlGaN interlayer and GaN epilayer is demonstrated.

New type of multimode-interference-type thermo-optic variable optical attenuator

A thermo-optic variable optical attenuator (VOA) based on a Mach-Zehnder interferometer and multimode-interference coupler is fabricated. Not a single-mode but a multimode waveguide is used as the input and output structures of the optical field, which greatly reduces the coupling loss of the VOA with a normal single-mode fiber. The insertion loss of the fabricated VOA is 2.52 to 2.82 dB at the wavelength of 1520 to 1570 nm. The polarization dependent loss is 0.28 to 0.45 dB at the same wavelength range. Its maximum attenuation range is up to 26.3 dB when its power consumption is 369 mW. The response frequency of the fabricated VOA is about 10 kHz. (C) 2004 Society of Photo-Optical Instrumentation Engineers.

Silica-based 64-channel arrayed waveguide gratings with double functions

Silica-based 64-channel arrayed waveguide gratings (AWGs) with double functions and 0.4 nm (50 GHz) channel spacing have been designed and fabricated. On the same component, Gauss and flat-top output response spectra are obtained simultaneously. The test results show that when the insertion loss ranges from 3.5 dB to 6 dB,the crosstalk is better than -34 dB, the 1 dB bandwidth is 0.12 nm, the 3 dB bandwidth is 0,218 nm, and the polarization-dependent loss (PDL) is less than 0.5 dB for Gauss response. When the insertion loss ranges,from 5.8 dB to 7.8 dB, the crosstalk is better than -30 dB, the 1 dB bandwidth is 0.24 nm, the 3 dB bandwidth is 0.33 nm, and the PDL is less than 0.2 dB for flat-top response.

High speed 2x2 optical switch in silicon-on-insulator based on plasma dispersion effect

Based on free carrier plasma dispersion effect, a 2 x 2 optical switch is fabricated in a silicon-on-insulator substrate by inductively coupled-plasma technology and ion implantation. The device has a Mach-Zehnder interferometer structure, in which two directional couplers serve as the power splitter and combiner. The switch presents an insertion loss of 3.04 dB and a response time of 496 ns.

Influence of thermal isolating grooves on the performance of the Mach-Zehnder interferometer-type thermo-optic variable optical attenuator

Two types of silicon-on-insulator thermo-optic variable optical attenuators (VOAs) based on a Mach-Zehnder interferometer and a multimode-interference coupler are fabricated, one with thermal isolating grooves to improve heating efficiency and the other without Comparison of optical and electrical properties, such as insertion losses, the maximum attenuation levels and the corresponding power consumptions, and the response times, is carried out between the two types of VOAs. The comparison results Indicate that use of thermal isolating grooves leads to better values for most characteristics and is an effective way to improve the performance of Mach-Zehnder interferometer-type thermo-optic devices. (c) 2005 Society of Photo-Optical Instrumentation Engineers.

Narrow-channel-spacing 32-channel arrayed-waveguide-grating multiplexer with an innovative alignment method

A 32-channel 50-GHz spaced arrayed-waveguide grating with our innovative configuration has been designed and fabricated. The performance of the device has been fully tested by using a tunable laser light source, optical power meter, and polarization controller. The insertion loss (IS) of the device is 4.2 similar to 7.4 dB. The crosstalk is about -28 clB. The IS uniformity is less than 3.2 dB. With our configuration, the performance of the device has been enhanced effectively and the difficulty in alignment process has been decreased obviously. (c) 2005 Society of Photo-Optical Instrumentation Engineers.

A 4x4 strictly nonblocking silicon-on-insulator thermo-optic switch matrix

A 4 x 4 strictly nonblocking thermo-optic switch matrix implemented with a 2 x 2 Mach-Zehnder switch unit was fabricated in silicon-on-insulator wafer. Insertion losses of the shortest and the longest path in the device are about 14.8 dB and 19.2 dB, respectively. The device presents a very low loss dependent on wavelength. For one switch unit, the power consumption needed for operation is measured to be 0.270 W-0.288 W and the switching time is about 13 +/- 1 mu s.

Low power-consumption and high response frequency thermo-optic variable optical Attenuators based on silicon-on-insulator materials

A novel silicon-on-insulator thermo-optic variable optical attenuator with isolated grooves based on a multimode interference coupler principle is fabricated by the inductive coupled plasma etching technology. The maximum fibre-to-fibre insertion loss is lower than 2.2 dB, the dynamic attenuation range is from 0 to 30 dB in the wavelength range 1500-1600 nm, and the maximum power consumption is only 140 mW. The response frequency of the fabricated variable optical attenuator is about 30 kHz. Compared to the variable optical attenuator without isolated grooves, the maximum power consumption decreases more than 220 mW, and the response frequency rises are more than 20 kHz.

Fabrication of a 4x4 strictly nonblocking SOI switch matrix

A 4 x 4 strictly nonblocking thermo-optical switch matrix based on Mach-Zehnder (MZ) switching unit was designed and fabricated in silicon-on-insulator (SOI) wafer. The paired multi-mode interferometers (MMI) were used as power splitters and combiners in MZ structures. The device presents an average insertion loss of 17 dB and an average crosstalk of 16.5 dB. The power consumption needed for operation is reduced to 0.288 W by adding isolating trenches. The switching time of the device is about 15 mu s, which is much faster than that of silica-based switches. (C) 2005 Elsevier B.V. All rights reserved.

Fabrication of arrayed waveguide grating based on SOI material

An arrayed waveguide grating based on SOI material was fabricated by inductive coupled plasma (ICP) etching technology. The central wavelength of the device was designed at 1.5509 mu m and the channel spacing was 200 GHz. Comparing with the values of the design, the differences of the central wavelength and the channel spacing in the test were 0.28 nm and 0.02 nm, respectively. The adjacent channel crosstalk was about 10 dB, and the uniformity of the five channels' insertion loss was only 0.7 dB. The results show that the device can be used as a demultiplexer.

Research on improved methods of reduction of bend loss of silicon-on-insulator waveguides

Improved methods of reduction of bend loss of silicon-on-insulator waveguides were simulated and analyzed by means of effective index method (EIM) and two dimensional beam propagation method (2D-BPM). The simulation results indicate that two different methods, one of which are introducing an offset at the junction of two waveguides and the other is etching groove at the outside of bend waveguide, can decrease bend loss. And the later one is more effective. Meanwhile, experiments validate them. By etching groove, the insertion loss of bend waveguide of R = 16mm, transverse displacement 70mum was decreased 5dB. And its bend loss was almost eliminated.

Silicon-on-insulator based electro-optic variable optical attenuator with a series structure

An electro-optic variable optical attenuator in silicon-on-insulator is designed and fabricated. A series Structure is used to improve the device efficiency Compared to the attenuator in the single p-i-n diode Structure in the same modulating length, the attenuation range of the device in the series structure improves 2-3 times in the same injecting current density, while the insertion loss is not affected. The maximum dynamic attenuation of the device is greater than 30 dB. The response frequency is obtained to be about 2 MHz.

A novel implantable multichannel silicon-based microelectrode

Silicon-based microelectrodes have been confirmed to be helpful in neural prostheses. The fabricated 7-channel silicon-based microelectrode was feasible to be implanted into the brain cortex. The manufacturing process by microelectromechanical system (MEMS) technology was detailed with four photolithographic masks. The microscopic photographs and SEM images indicated that the probe shank was 3mm long, 100 mu m wide and 20 mu m thick with the recording sites spaced 120 mu m apart for good signal isolation. To facilitate the insertion and minimize the trauma, the microelectrode is narrowed down gradually near the tip with the tip taper angle of 6 degrees. Curve of the single recording site impedance versus frequency was shown by test in vitro and the impedance declined from 150.5 k Omega to 6.0 k Omega with frequency changing from 10 k to 10MHz.