High speed 2x2 optical switch in silicon-on-insulator based on plasma dispersion effect


Autoria(s): Sun F; Yu JZ; Chen SW
Data(s)

2005

Resumo

Based on free carrier plasma dispersion effect, a 2 x 2 optical switch is fabricated in a silicon-on-insulator substrate by inductively coupled-plasma technology and ion implantation. The device has a Mach-Zehnder interferometer structure, in which two directional couplers serve as the power splitter and combiner. The switch presents an insertion loss of 3.04 dB and a response time of 496 ns.

Identificador

http://ir.semi.ac.cn/handle/172111/8376

http://www.irgrid.ac.cn/handle/1471x/63718

Idioma(s)

英语

Fonte

Sun, F; Yu, JZ; Chen, SW .High speed 2x2 optical switch in silicon-on-insulator based on plasma dispersion effect ,CHINESE PHYSICS LETTERS,DEC 2005,22 (12):3097-3099

Palavras-Chave #光电子学 #WAVE-GUIDE SWITCH
Tipo

期刊论文