Avaliação da eficácia da terapia fotodinâmica como adjunto ao tratamento periodontal de pacientes com periodontite agressiva

A periodontite agressiva é um processo inflamatório de origem bacteriana mediado pelo sistema imunológico do hospedeiro e é provavelmente a forma mais grave de doença periodontal, apresentando destruição das estruturas tanto de proteção quanto de suporte dentário, num período relativamente rápido, normalmente levando a perda prematura dos elementos dentários e, em alguns casos, terapia antimicrobiana adjunta é necessária em adição à terapia mecânica. O objetivo do presente ensaio clínico randomizado controlado foi avaliar o efeito clínico da terapia fotodinâmica como adjunto ao tratamento periodontal não cirúrgico no tratamento da periodontite agressiva Os seguintes parâmetros clínicos foram avaliados: índice de placa visível, sangramento à sondagem, profundidade de bolsa à sondagem, nível de inserção clínica relativo, envolvimento de furca e mobilidade. Foram selecionados dez pacientes com periodontite agressiva, os quais foram examinados no dia zero e após três meses.O desenho do estudo consistiu em um modelo de boca dividida, onde um hemiarco foi tratado com raspagem e alisamento radicular e terapia fotodinâmica (laser diodo) e o outro apenas com raspagem e alisamento radicular. Três meses após o término do tratamento, os grupos terapêuticos apresentaram resultados semelhantes para todos os parâmetros clínicos avaliados: ambas as terapias tiveram sucesso, como redução de profundidade de bolsa, ganho de nível de inserção clínica relativo, redução de índice de placa visível, redução de sangramento à sondagem, diminuição de envolvimento de furca e diminuição de mobilidade, porém sem diferenças estatisticamente significantes entre elas. Dentro das limitações do presente estudo, os resultados sugerem que a terapia fotodinâmica adjuntamente ao tratamento periodontal não cirúrgico mecânico foi tão eficaz quanto o tratamento periodontal não cirúrgico mecânico sozinho.

矩阵理论在半导体激光器耦合中的应用

傍轴近似下的光学矩阵理论，可以简化光束传输计算过程，使光学系统设计更为方便。将ABCD变换矩阵方法引入到耦合光学系统的设计中，运用高斯光束的ABCD法则，详尽地给出了某一耦合方式下的半导体激光器耦合入单模光纤系统的设计；另一方面，对系统的耦合损耗与耦合距离的关系进行了理论计算，并把计算结果与最近的实验报道做了比较，它们基本相吻合，说明此方法是可行的、合理的。从整个设计及理论计算来看，ABCD矩阵方法减少了复杂的计算，从而简化了设计过程，与通常的衍射计算相比，它不失为一种方便、有效的方法，同时它对生产半导体

用于大范围高精度实时位移测量的半导体激光干涉仪

现有的半导体激光干涉仪存在测量精度与测量范围的矛盾。本文提出一种新的实时位移测量半导体激光干涉仪，并分析了干涉仪的测量原理。首先提出一种新的解相算法，它通过两路实时相位探测电路从干涉信号中得到待测量相位，消除了光强波动、初始光程差、电路放大倍数、调制深度、Bessel函数等参数对测量精度的影响，提高了测量精度。其次，提出一种扩大测量范围的技术，并用解包裹电路得到真实相位和待测量的位移, 将测量范围从半个波长提高到几个波长。在实验中，测得喇叭的峰峰值为2361.7nm，重复测量精度为2.56nm，测量时间为

光纤光栅滤波的瓦斯传感系统的研究

差分吸收法是进行瓦斯远距离监测的重要方法，根据瓦斯在近红外波段的吸收特性，报道了一种新型的远距离光纤瓦斯传感系统。采用1．3μm超辐射发光二极管为光源，利用光纤布拉格光栅(FBG)优良的窄带滤波特性实现了对瓦斯的差分吸收测量。和传统的干涉滤光片相比，光纤光栅滤波器插入损耗低、制备简单。系统具有全光纤化、结构简单、工作距离远、稳定性好的特点。工作距离10km，测量灵敏度为0．1％，是瓦斯爆炸极限的2％。

Small-dynamic-angle measurement using tangent relationship and phase-modulating technique

A method using two prisms for measurement of small dynamic angles is proposed in which the measurement is based on a simple tangent equation and a phase-modulating interferometer with a laser diode to measure dynamic optical path differences with higher accuracy. Owing to the simple tangent equation, the symmetry requirement on the two prisms in the optical configuration is eliminated, and easy measurement of the separations between two parallel beams with a position-sensitive detector is achieved. Small-dynamic-angle measurements are experimentally demonstrated with high accuracy. (C) 2007 Society of Photo-Optical Instrumentation Engineers.

Lau cavity and phase locking of laser arrays

The Lau cavity is the self-imaging cavity with a phase corrector under the Lau reimaging condition. The author proposes the use of the Lau cavity to utilize both the Talbot and the Lau effects for phase locking one-dimensional and two-dimensional diode-laser arrays into a single-lobe coherent beam. Analyses on the self-reproducing of a coherent lasing field and the reimaging of initial incoherent radiation are given.

ABCD matrix for reflection and refraction of Gaussian beams at the surface of a parabola of revolution

We report the formulation of an ABCD matrix for reflection and refraction of Gaussian light beams at the surface of a parabola of revolution that separate media of different refractive indices based on optical phase matching. The equations for the spot sizes and wave-front radii of the beams are also obtained by using the ABCD matrix. With these matrices, we can more conveniently design and evaluate some special optical systems, including these kinds of elements. (c) 2005 Optical Society of America

A phase-shifting vectorial-shearing interferometer with wedge plate phase-shifter

We present a novel phase-shifting vectorial-shearing interferometer with a wedge plate phase-shifter. The interferometer is based on a modified Mach-Zehnder configuration; the common-path nature makes it capable of testing the wavefront of a short coherence-length light source, such as a laser diode. Vectorial shear (shearing in the x and y directions simultaneously) in an arbitrary direction is introduced by inserting two wedge plates orthogonally in two arms, respectively. One of the wedge plates is split into two parts (parallel part and wedge part); phase shift is produced by moving the wedge part in contact along the parallel part. The moving distance for a 2 pi phase shift is a few millimetres in specific conditions. The wedge plate phase-shifter increases the moving distance for phase shift and makes the control of phase shift relatively easy. We also discuss the lateral shear error and phase shift errors induced by wedge plates. The lateral shear error is small enough to be ignored; the phase shift error is determined mainly by the wedge angle error. Lastly, we give the experimental results of phase-shifting interference fringes in vectorial shear mode.

Radius of curvature measurements for laser beams: A simple method

A simple method for measuring the radius of curvature of laser beams is introduced. It has been developed to estimate the astigmatic aberration of a diode laser. Compared with the interferornetry, this method is convenient and straightforward. (c) 2005 Elsevier GmbH. All rights reserved.

Total cross section measurements for ^3He(^3He, 2p)^4He at low energies

Precise measurements of the total reaction cross section for ³He(³He,2p)⁴He He have been made in the range of center-of-mass energies between 1100 keV and 80 keV. A differentially pumped gas target modified to operate with a limited quantity of the target gas was employed to minimize the uncertainties in the primary energy and energy straggle. Beam integration inside the target gas was carried out by a calorimetric device which measures the total energy spent in a heat sink rather than the total charge in a Faraday cup. Proton energy spectra have been obtained using a counter telescope consisting of a gas proportional counter and a surface barrier detector and angular distributions of these protons have been measured at seven bombarding energies. Cross section factors, S(E), have been calculated from the total cross sections and fitted to a linear function of energy over different ranges of energy. For E_cm < 500 keV

S(E_cm) = S₀ + S₁ E_cm

where S₀ = (5.0 ^+0.6_-0.4) MeV - barns and S₁ = (-1.8 ± 0.5) barns.

基于人工神经网络的大量程光纤实时距离干涉测量仪

提出了一种基于人工神经网络的全光纤化大量程实时距离干涉测量仪．采用双正弦相位调制方法，即通过同时调制半导体激光器的波长和干涉仪的光程差实现外差测量。为了扩大干涉仪的测量范围和消除输出信号中的交叉敏感，采用人工神经网络进行信号处理，把两路经过初步解调的干涉信号作为输入样本，物体距离的实际值作为输出样本，对神经网络进行训练，以使其具有良好的推广能力．实验结果表明神经网络的使用不仅扩大了距离的测量范围而且提高了测量精度．

Small-dynamic-angle measurement using tangent relationship and phase-modulating technique

A method using two prisms for measurement of small dynamic angles is proposed in which the measurement is based on a simple tangent equation and a phase-modulating interferometer with a laser diode to measure dynamic optical path differences with higher accuracy. Owing to the simple tangent equation, the symmetry requirement on the two prisms in the optical configuration is eliminated, and easy measurement of the separations between two parallel beams with a position-sensitive detector is achieved. Small-dynamic-angle measurements are experimentally demonstrated with high accuracy. (C) 2007 Society of Photo-Optical Instrumentation Engineers.

Parallel plate interferometer with a reflecting mirror for measuring angular displacement

A parallel plate interferometer with a reflecting mirror for measuring angular displacement is proposed. A deflection angle of a beam caused by an angular displacement is amplified by use of a reflecting mirror to increase the optical path difference (OPD) in the plane-parallel plate, which provides high sensitivity of the phase measurement. Detection of light transmitted through the plane-parallel plate with a position sensitive detector (PSD) enables high accurate measurement of the initial angle of incidence to the plane-parallel plate with insensitivity to stray light. The improved parallel plate interferometer achieves a measurement repeatability of 10(-8) rad. (C) 2007 The Optical Society of Japan.

Spontaneous and stimulated light emission due to radiative recombination in forward biased lead telluride P-N junctions

Since the discovery in 1962 of laser action in semiconductor diodes made from GaAs, the study of spontaneous and stimulated light emission from semiconductors has become an exciting new field of semiconductor physics and quantum electronics combined. Included in the limited number of direct-gap semiconductor materials suitable for laser action are the members of the lead salt family, i.e . PbS, PbSe and PbTe. The material used for the experiments described herein is PbTe . The semiconductor PbTe is a narrow band- gap material (E_g = 0.19 electron volt at a temperature of 4.2°K). Therefore, the radiative recombination of electron-hole pairs between the conduction and valence bands produces photons whose wavelength is in the infrared (λ ≈ 6.5 microns in air).

The p-n junction diode is a convenient device in which the spontaneous and stimulated emission of light can be achieved via current flow in the forward-bias direction. Consequently, the experimental devices consist of a group of PbTe p-n junction diodes made from p –type single crystal bulk material. The p - n junctions were formed by an n-type vapor- phase diffusion perpendicular to the (100) plane, with a junction depth of approximately 75 microns. Opposite ends of the diode structure were cleaved to give parallel reflectors, thereby forming the Fabry-Perot cavity needed for a laser oscillator. Since the emission of light originates from the recombination of injected current carriers, the nature of the radiation depends on the injection mechanism.

The total intensity of the light emitted from the PbTe diodes was observed over a current range of three to four orders of magnitude. At the low current levels, the light intensity data were correlated with data obtained on the electrical characteristics of the diodes. In the low current region (region A), the light intensity, current-voltage and capacitance-voltage data are consistent with the model for photon-assisted tunneling. As the current is increased, the light intensity data indicate the occurrence of a change in the current injection mechanism from photon-assisted tunneling (region A) to thermionic emission (region B). With the further increase of the injection level, the photon-field due to light emission in the diode builds up to the point where stimulated emission (oscillation) occurs. The threshold current at which oscillation begins marks the beginning of a region (region C) where the total light intensity increases very rapidly with the increase in current. This rapid increase in intensity is accompanied by an increase in the number of narrow-band oscillating modes. As the photon density in the cavity continues to increase with the injection level, the intensity gradually enters a region of linear dependence on current (region D), i.e. a region of constant (differential) quantum efficiency.

Data obtained from measurements of the stimulated-mode light-intensity profile and the far-field diffraction pattern (both in the direction perpendicular to the junction-plane) indicate that the active region of high gain (i.e. the region where a population inversion exists) extends to approximately a diffusion length on both sides of the junction. The data also indicate that the confinement of the oscillating modes within the diode cavity is due to a variation in the real part of the dielectric constant, caused by the gain in the medium. A value of τ ≈ 10^-9 second for the minority- carrier recombination lifetime (at a diode temperature of 20.4°K) is obtained from the above measurements. This value for τ is consistent with other data obtained independently for PbTe crystals.

Data on the threshold current for stimulated emission (for a diode temperature of 20. 4°K) as a function of the reciprocal cavity length were obtained. These data yield a value of J’_th = (400 ± 80) amp/cm² for the threshold current in the limit of an infinitely long diode-cavity. A value of α = (30 ± 15) cm^-1 is obtained for the total (bulk) cavity loss constant, in general agreement with independent measurements of free- carrier absorption in PbTe. In addition, the data provide a value of n_s ≈ 10% for the internal spontaneous quantum efficiency. The above value for n_s yields values of t_b ≈ τ ≈ 10^-9 second and t_s ≈ 10^-8 second for the nonradiative and the spontaneous (radiative) lifetimes, respectively.

The external quantum efficiency (n_d) for stimulated emission from diode J-2 (at 20.4° K) was calculated by using the total light intensity vs. diode current data, plus accepted values for the material parameters of the mercury- doped germanium detector used for the measurements. The resulting value is n_d ≈ 10%-20% for emission from both ends of the cavity. The corresponding radiative power output (at λ = 6.5 micron) is 120-240 milliwatts for a diode current of 6 amps.

物体表面形貌的正弦相位调制实时干涉测量技术研究

表面形貌干涉测量技术是一种高精度的非接触式测量技术,在工业生产和科学研究中具有广泛的应用。提出一种实时测量表面形貌的正弦相位调制干涉测量新技术。该技术用激光二极管作光源,用自制的高速图像传感器探测干涉信号,通过信号处理电路实时解相得到被测表面所对应的相位分布,实时分析相位获得物体表面形貌。该技术消除了光强和部分外界干扰的影响,提高了系统的测量精度。楔形光学平板表面形貌的测量结果表明,测量点为60×60个的情况下,测量时间小于8.2 ms,重复测量精度(RMS)为4.3 nm。