Modeling sub-threshold current-voltage characteristics in thin film transistors

In this paper, we present a physically-based compact model for the sub-threshold behavior in a TFT with an amorphous semiconductor channel. Both drift and diffusion current components are considered and combined using an harmonic average. Here, the diffusion component describes the exponential current behavior due to interfacial deep states, while the drift component is associated with presence of localized deep states formed by dangling bonds broken from weak bonds in the bulk and follows a power law. The proposed model yields good agreement with measured results. © 2013 IEEE.

Switch mode constant current LED Driver with high efficiency, high precision and wide dimming ratio

A high efficiency hard switching constant current LED driver is presented with high overall efficiency, high current precision, high LED efficacy, flicker-free and wide constant current dimming ratio. The high stable lighting source provides the best solution for office light, reading light and LCD backlight. © 2013 IEEE.

Articulating current service development practices: a qualitative analysis of eleven mental health projects.

BACKGROUND: The utilisation of good design practices in the development of complex health services is essential to improving quality. Healthcare organisations, however, are often seriously out of step with modern design thinking and practice. As a starting point to encourage the uptake of good design practices, it is important to understand the context of their intended use. This study aims to do that by articulating current health service development practices. METHODS: Eleven service development projects carried out in a large mental health service were investigated through in-depth interviews with six operation managers. The critical decision method in conjunction with diagrammatic elicitation was used to capture descriptions of these projects. Stage-gate design models were then formed to visually articulate, classify and characterise different service development practices. RESULTS: Projects were grouped into three categories according to design process patterns: new service introduction and service integration; service improvement; service closure. Three common design stages: problem exploration, idea generation and solution evaluation - were then compared across the design process patterns. Consistent across projects were a top-down, policy-driven approach to exploration, underexploited idea generation and implementation-based evaluation. CONCLUSIONS: This study provides insight into where and how good design practices can contribute to the improvement of current service development practices. Specifically, the following suggestions for future service development practices are made: genuine user needs analysis for exploration; divergent thinking and innovative culture for idea generation; and fail-safe evaluation prior to implementation. Better training for managers through partnership working with design experts and researchers could be beneficial.

Multiple cohorts of juvenile jack mackerel Trachurus japonicus in waters along the Tsushima Warm Current

The jack mackerel, Trachurus japonicus, has a prolonged spawning season and widely spread spawning grounds. The population in the coastal waters of Japan seems to be composed of several cohorts spawned seasonally from different waters. To understand its population structure along the Tsushima Warm Current, we analysed hatchdates and growth histories of fish from Kunda Bay, the southern, central and northern East China Sea (ECS), the southern Sea of Japan, and Maizuru Bay. Seven cohorts were detected from fish collected between June 2005 and June 2006 in Kunda Bay. Comparing hatchdate distributions and growth trajectories of the seven cohorts with those of the other five regional samples, we did not find that cohorts collected in Kunda Bay originated in the southern ECS. Therefore, these coastal waters of Japan appear to be significant spawning grounds for juvenile jack mackerel. (C) 2008 Elsevier B.V. All rights reserved.

DC current rectification using indium-gallium zinc oxide-based selfswitching diodes

Self-switching diodes have been fabricated within a single layer of indium-gallium zinc oxide (IGZO). Current-voltage (I-V) measurements show the nanometer-scale asymmetric device gave a diode-like response. Full current rectification was achieved using very narrow channel widths of 50nm, with a turn-on voltage, Von, of 2.2V. The device did not breakdown within the -10V bias range measured. This single diode produced a current of 0.1μA at 10V and a reverse current of less than 0.1nA at -10V. Also by adjusting the channel width for these devices, Von could be altered; however, the effectiveness of the rectification also changed. © 2013 IEEE.

Current research in embankment dam engineering at imperial college London

This paper gives a short introduction to two research streams in embankment dam engineering underway at Imperial College London. The first is the modelling of embankment dam behaviour during earthquakes and the second is an investigation into the susceptibility of granular filters to internal erosion. The research motivation, methods and expected outcomes of each stream are discussed.

Modeling current-voltage behaviour in oxide TFTs combining trap-limited conduction with percolation

Current-voltage behaviour of oxide TFTs is modeled based on trap-limited conduction and percolation theories. The mobility has a power-law dependence, in which percolation controls the exponent while trap states determine constant term in the power law. The proposed model, which is fully physically-based, provides a good agreement with measured transistor characteristics as well as transient operations of fabricated pixel test circuits for oxide-based OLED displays. © 2013 Society for Information Display.

Parameters influencing the maximum controllable current in gate commutated thyristors

The model of interconnected numerical device segments can give a prediction on the dynamic performance of large area full wafer devices such as the Gate Commutated Thyristors (GCTs) and can be used as an optimisation tool for designing GCTs. In this study the authors evaluate the relative importance of the shallow p-base thickness, its peak concentration, the depth of the p-base and the buffer peak concentration. © The Institution of Engineering and Technology 2014.

Suckers (Fish, Catostomidae) from the Eocene of China account for the family's current disjunct distributions

Unequivocal Eocene suckers from China are for the first time reported here. This discovery demonstrates that catostomids of the Eocene Epoch (some 55-35 Ma ago) are scattered widely on mainland Asia as well as western North America. The present day disjunct distribution pattern of catostomids, with 68 extant species widespread in North America and the northern part of Middle America and only two in the restricted areas of Asia, is the result of their post-Eocene decline in Asia due to the competitive pressure from cyprinids, their Late Cenozoic radiation in North America, and the vicariant and dispersal events triggered by the changed biogeographic landscape. All of these prove to be a historical product of the geological, biological, and climatic changes throughout the Cenozoic.

Effect of surface treatment of GaN based light emitting diode wafers on the leakage current of light emitting diode devices

To form low-resistance Ohmic contact to p-type GaN, InGaN/GaN multiple quantum well light emitting diode wafers are treated with boiled aqua regia prior to Ni/Au (5 nm/5 nm) film deposition. The surface morphology of wafers and the current-voltage characteristics of fabricated light emitting diode devices are investigated. It is shown that surface treatment with boiled aqua regia could effectively remove oxide from the surface of the p-GaN layer, and reveal defect-pits whose density is almost the same as the screw dislocation density estimated by x-ray rocking curve measurement. It suggests that the metal atoms of the Ni/Au transparent electrode of light emitting diode devices may diffuse into the p-GaN layer along threading dislocation lines and form additional leakage current channels. Therefore, the surface treatment time with boiled aqua regia should not be too long so as to avoid the increase of threading dislocation-induced leakage current and the degradation of electrical properties of light emitting diodes

Role of Ga vacancies in enhancing the leakage current of GaN Schottky barrier ultraviolet photodetectors

The leakage current of GaN Schottky barrier ultraviolet photodetectors is investigated. It is found that the photodetectors adopting undoped GaN instead of lightly Si-doped GaN as an active layer show a much lower leakage current even when they have a higher dislocation density. It is also found that the density of Ga vacancies in undoped GaN is much lower than in Si-doped GaN. The Ga vacancies may enhance tunneling and reduce effective Schottky barrier height, leading to an increase of leakage current. It suggests that when undoped GaN is used as the active layer, it is necessary to reduce the leakage current of GaN Schottky barrier ultraviolet photodetector.

Analysis of lateral current spreading in solar cell devices by spatially-resolved electroluminescence

Spatially-resolved electroluminescence (EL) images from solar cells contain information of local current distribution. By theoretical analysis of the EL intensity distribution, the current density distribution under a certain current bias and the sheet resistance can be obtained quantitatively. Two-dimensional numerical simulation of the current density distribution is employed to a GaInP cell, which agrees very well with the experimental results. A reciprocity theorem for current spreading is found and used to interpret the EL images from the viewpoint of current extraction. The optimization of front electrodes is discussed based on the results. (C) 2010 American Institute of Physics. [doi:10.1063/1.3431390]

Spin-dependent current noises in transport through coupled quantum dots

Current fluctuations can provide additional insight into quantum transport in mesoscopic systems. The present work is carried out for the fluctuation properties of transport through a pair of coupled quantum dots which are connected with ferromagnetic electrodes. Based on an efficient particle-number-resolved master equation approach, we are concerned with not only fluctuations of the total charge and spin currents, but also of each individual spin-dependent component. As a result of competition among the spin polarization, Coulomb interaction, and dot-dot tunnel coupling, rich behaviors are found for the self- and mutual-correlation functions of the spin-dependent currents.