Structure, organization and expression of common carp (Cyprinus carpio L.) NKEF-B gene

Natural killer (NK) cell enhancing factor (NKEF) belongs to the newly defined peroxiredoxin (Prx) family. Its functions are to enhance NK cell cytotoxicity and to protect DNA and proteins from oxidative damage. In this study, a partial cDNA sequence of carp NKEF-B was isolated from thymus cDNA library. Subsequently, the full-length cDNA of carp NKEF-B was obtained by means of 3' and 5' RACE, respectively. The full-length cDNA of carp NKEF-B was 1022 bp, consisting of a 73 bp 5'-terminal untranslated region (UTR), a 355 bp T-terminal UTR, and a 594 bp open reading frame coding for a protein of 197 amino acids. Carp NKEF-B contained two consensus Val-Cys-Pro (VCP) motifs and three consensus cysteine (Cys-51, Cys-70 and Cys-172) residues. Sequence comparison showed that the deduced amino acid sequence of carp NKEF-B had an overall similarity of 74-96% to that of other species homologues. Phylogenetic analysis revealed that carp NKEF-B forms a cluster with other known teleost NKEF-Bs. Then, by PCR we obtained a 5.1 -k long genomic DNA of carp NKEF-B containing six exons and five introns. Realtime RT-PCR results showed that carp NKEF-B gene was predominantly detected in kidney and head kidney under un-infected conditions. Whereas under SVCV-infection condition, the expression of NKEF-B gene was significantly increased in blood cells, gill, intestine and spleen, but maintained in liver, and decreased significantly in kidney and head kidney. Finally, the rNKEF-B was constructed and expressed in Escherichia coli. By using an antibody against carp rNKEF-B, immunohistochemical study further indicated that NKEF-B positive cells are mainly some RBCs and a few epithelial cells in gill and intestine, and that under SVCV-infection condition, these positive cells or positive products in their cytoplasm were mainly increased in gill and spleen sections of carp. The results obtained in the present study will help to understand the function of NKEF-B in teleost innate immunity. (C) 2008 Elsevier Ltd. All rights reserved.

The phylogenetic relationships of the gobioninae (Teleostei : Cyprinidae) inferred from mitochondrial cytochrome b gene sequences

The Gobioninae are a group of morphologically and ecologically diverse Eurasian freshwater cyprinid fishes. The intergeneric relationships of this group are unresolved and the possible monophyly of this subfamily remains to be established. We used complete mitochondrial cytochrome b gene sequences from most genera within the gobionine group, in addition to a selection of cyprinid outgroups, to investigate the possible monophyly of this group and resolve the interrelationships within the group. Our results support the monophyly of the Gobioninae and identify four monophyletic groups within the subfamily; the Hemibarbus group, the Sarcocheilichthys group, the Gobio group, and the Pseudogobio group. The morphologically aberrant genera Gobiobotia, Xenophysogobio and Gobiocypris are included in the Gobioninae, with the latter a sister group of Gnathopogon.

Dopant compensation in HfO2 and other high K oxides

The theory of doping limits in semiconductors and insulators is applied to the case of wide gap oxides, crystalline, or amorphous, and used to explain that impurities do not in general give rise to gap states or a doping response. Instead, the system tends to form defect complexes or undergo symmetry-lowering reconstructions to expel gap states out of the band gap. The model is applied to impurities, such as trivalent metals, carbon, N, P, and B, in HfO2, the main gate dielectric used in field effect transistors. © 2014 AIP Publishing LLC.

Properties of high k gate dielectric gadolinium oxide deposited on Si(100) by dual ion beam deposition (DIBD)

Gadolinium oxide thin films have been prepared on silicon (100) substrates with a low-energy dual ion-beam epitaxial technique. Substrate temperature was an important factor to affect the crystal structures and textures in an ion energy range of 100-500 eV. The films had a monoclinic Gd2O3 structure with preferred orientation ((4) over bar 02) at low substrate temperatures. When the substrate temperature was increased, the orientation turned to (202), and finally, the cubic structure appeared at the substrate temperature of 700 degreesC, which disagreed with the previous report because of the ion energy. The AES studies found that Gadolinium oxide shared Gd2O3 structures, although there were a lot of oxygen deficiencies in the films, and the XPS results confirmed this. AFM was also used to investigate the surface images of the samples. Finally, the electrical properties were presented. (C) 2004 Elsevier B.V. All rights reserved.

Photoemission study of chemisorption and Fermi-level pinning at K/GaAs(100) interface with synchrotron radiation

The adsorption of K on the n-GaAs(I 0 0) surface was investigated by X-ray photoelectron spectroscopy (XPS) and synchrotron radiation photoemission spectroscopy (SR-PES). The Ga3d and As3d core level was measured for clean and K adsorbed GaAs(I 0 0) surface. The adsorption of K induced chemical reaction between K and As, and the K-As reactant formed when the K coverage theta > I ML. The chemical reaction between K and Ga did not occur, but Ga atoms were exchanged by K atoms. From the data of band bending, the Schottky barrier is 0.70 eV. The Fermi-level pinning was not caused by defect levels. The probable reason is that the dangling bonds of surface Ga atoms were filled by the outer-shell electrons of K atoms, forming a half-filled surface state. The Fermi-level pinning was caused by this half-filled surface state. (c) 2004 Elsevier B.V. All rights reserved.

Influence of N doping on the Rashba coefficient, semiconductor-metal transition, and electron effective mass in InSb1-xNx nanowires: Ten-band k center dot p model

The electronic structures of InSb1-xNx nanowires are investigated using the ten-band k center dot p method. It is found that nitrogen increases the Rashba coefficient of the nanowires dramatically. For thick nanowires, the Rashba coefficient may increase by more than 20 times. The semiconductor-metal transition occurs more easily in InSb1-xNx nanowires than in InSb nanowires. The electronic structure of InSb1-xNx nanowires is very different from that of the bulk material. For fixed x the bulk material is a semimetal, while the nanowires are metal-like. In InSb1-xNx bulk material and thick nanowires, an interesting decrease of electron effective mass is observed near k=0 which is induced by the nitrogen, but this phenomenon disappears in thin nanowires.

Origin and elimination of spurious solutions of the eight-band k center dot p theory

The origin of spurious solutions in the eight-band envelope function model is examined and it is shown that spurious solutions arise from the additional spurious degeneracies caused by the unphysical bowing of the conduction bands calculated within the eight-band k center dot p model. We propose two approaches to eliminate these spurious solutions. Using the first approach, the wave vector cutoff method, we demonstrate the origin and elimination of spurious solutions in a transparent way without modifying the original Hamiltonian. Through the second approach, we introduce some freedom in modifying the Hamiltonian. The comparison between the results from the various modified Hamiltonians suggests that the wave vector cutoff method can give accurate enough description to the final results.

Exciton localization in In0.15Ga0.85As/GaAs quantum wire structures grown on (553)B-oriented GaAs substrate

Using time-resolved photoluminescence (PL) measurements, we have studied the exciton localization effect in InGaAs/GaAs quantum wire (QWR) structures formed in corrugated narrow InGaAs/GaAs quantum wells (QWs) grown on (553)B GaAs substrate. The PL decay time in the QWR structure was found to be independent of the temperature for T < 70 K, showing a typical dynamical behavior of the localized excitons. This result is in striking contrast to the corresponding quantum well structures, where a linear increase of the PL decay time was observed. In addition, an increase of the exciton lifetime was observed at low temperature for the QWR structure as compared to a reference InGaAs/GaAs quantum well sample (1200 vs 400 ps). The observed longer decay time was attributed to the reduction in the spatial coherence of excitons in the QWR-like structure. In PL measurements, a significant polarization anisotropy was also found in our narrow InGaAs/GaAs QWs grown on (553)B GaAs. (C) 2001 American Institute of Physics.

I：新型稀土永磁材料Nd-Fe-B���化过程及抗氧化新体系研究II：CuO、Y_2Cu_2O_5、BaCuO_2和RBa_2Cu_3O_(7-δ)超导体磁化率及Cu价态研究

本论文由两大部分组成。第一部分是新型稀土永磁材料Nd-Fe-B���化过程及抗氧化新体系的研究。Nd-Fe-B���磁体是1983年问世的新型稀土永磁材料。和原有的铁氧体及Sm-Co体系相比，具有磁能积高（50MGOe）。价廉源广，制备简单等三大优点；也有居里温度低（310℃），温度系数大（－0.126%/K），易氧化等三大缺点，我们对Nd-Fe-B���金的氧化过程进行研究，发现该材料热稳定性差，容易发生氧化反应，氧化使材料的结构受到破坏，并给材料的磁性造成不可恢复的损失，整个氧化过程是分阶段的。在室温和干燥的空气中材料基本是稳定的。150℃以下材料磁性受到破坏的主要原因是体系中Nd的氧化。230℃以上材料主体成分Fe也开始氧化，温度升高使反应进程大大加快。到800℃左右反应基本结束，最终产物主要为Fe_2O_3, Nd_2O_3·FeNdO_3和NdBO_3。增加体系中B���相对含量和添加某些新的元素均能提高材料的抗氧化能力，新研制的Nd-Fe-B-Si四元体系和原来的Nd-Fe-B���系相比具有下列显著优点：新体系的抗氧化能力大大提高，经过150℃的长期恒温试验，材料的结构，磁性均未受到破坏，某些体系甚至能在更高的温度下使用，另外，新体系的居里温度Tc也大为提高。比原有Nd-Fe-B���体高40℃左右。因此该体系是一种大有发展前途的新材料。此外，我们用动态热重法研究了Nd-Fe-B���金的氧化动力学过程，但由于我们新合成的体系构相较为复杂，未能达到预期效果。第二部分是CuO，Y_2Cu_2O_5，BaCuO_2和RBa_2Cu_3O_(7-δ)超导体（R稀土元素）磁化率及铜价态研究，铜的氧化物具有复杂的化学计量关系和磁学性质。在对CuO的磁化率研究中，我们发现在低温区（77K－110K）和一定磁场下，CuO由顺磁突变为抗磁。这种转变与磁场强度有很大关系。这一结果与前人的工作有较大的出入。而与超导体的形为极为相似。所不同的是，转变温度与样品的重量也有关系。实验结果重复。由于铜氧性质在R-Ba-Cu-O超导体中起决定作用，因此有必要对CuO的低温磁性作进一步研究。此外，我们对文献尚未报道的Y_2Cu_2O_5的磁化率在77－300K温度区间进行了测量，发现它是顺磁性物质，室温有效磁矩μ_(eff) = 2.13μB���高于Cu~(2+)的理论有效磁矩（1.73μB���。经过碘量法价态分析，发现Y_2Cu_2O_5中有部分Cu~(3+)，这与磁化率的测定相符合。Tc在90K左右的Y-Ba-Cu-O体系是近期才发现的具有超高温超导材料。该体系有着独特的结构和性质。在对R-Ba-Cu-O及R-Ba-Cu-O-Ag超导体的研究中，我们发现此类超导体属II类超导体，在临界温附近该超导体由顺磁转变为抗磁，此种变化与磁场强度有很大关系，当场强大于一定值后，则观察不到这种转变。在对RBa_2Cu_3O_(7-δ) (R = Y, Sm, Eu, Gd, Dy, Ho, Er, Tm)超导体和具有相同配比但由于合成工艺条件不同而不超导的R'Ba_2Cu_3O_(7-δ) (R' = Y, Sm, Eu, Gd)非超导体的铜价态分析中，我们发现此两类化合物中均含有一定量的Cu~(3+)。且超导体中Cu~(3+)的含量高于非超导体中Cu~(3+)的含量（同样比例）。我们还发现Cu~(3+)对水极为敏感，将RBa_2Cu_3O_(7-δ) (除R = Gd, Dy, Er)超导体在未干燥容器中测出的Cu~(3+)量远远低于干燥容器中所测得的值。我们认为这可能是引起超导体不稳定的重要原因。由于尚缺乏用其它手段检测到超导体中Cu~(3+)存在的例证。故对此问题还有待于今后继续作进一步的研究。

激波管壁AlO自由基B~2∑~+-X~2∑~+和C~2∏_r-X~2∑~+带系辐射光谱的研究

爆轰驱动过程中产生的高温高压气流对铝质膜片、激波管壁产生烧蚀和冲刷作用,以致激波管壁、端盖上附有氧化铝等杂质,而高温下AlO自由基在气体分子的高速碰撞下被激发并产生强烈的辐射,从而干扰了高温气体辐射光谱的分析。用爆轰驱动加热技术将空气加热到4 000~7 000 K,利用多通道光学分析仪对AlO自由基辐射光谱进行分析,实验发现在460~530 nm波长范围内有多支辐射非常强烈的AlO自由基B2Σ+-X2Σ+(T00=20 689 cm-1)带系辐射谱带,且每支谱带都由多个带头组成,带头间隔约为2 nm,带头处于高频位置并向低频方向伸延。通过实验与理论计算相结合,重点分析了AlO自由基B2Σ+-X2Σ+带系辐射光谱的结构特征。AlO自由基C2Πr-X2Σ+(T00=33 047 cm-1)带系辐射光谱处于270~335 nm波长范围内,其辐射强度相对于B2Σ+-X2Σ+带系较弱,并且与OH基A2Σ+-X2Π(T00=32 682 cm-1)带系辐射光谱互相干扰而难以分辨,对该波段高温空气的辐射光谱分析产生不利的影响。

模拟增温与UV-B 辐射增强对云杉种子萌发和幼苗生长的影响

臭氧层损耗导致的地球表面UV-B���射增强以及温室气体增多引起的气候变暖是当今两大全球环境问题。UV-B���射增强和气候变暖对陆地植物和生态系统产生深远影响，并已成为全球变化研究的重要议题。作为世界第三极的青藏高原，UV-B 辐射增强以及气候变暖现象尤为突出。本试验所在林区是青藏高原东缘的主要林区，具有大面积的亚高山人工针叶成熟林，在全球变化背景下该森林的天然更新潜力如何是急待回答的重要问题。基于此，本研究围绕森林树种的种子和幼苗这一更新的重要阶段，开展了气候变暖、UV-B���射增强和联合胁迫对云杉种子萌发及幼苗定居影响的研究，旨在全球变化背景下，探讨全球变暖、UV-B 辐射增强和联合胁迫是否对西南地区大面积人工亚高山针叶林更新的种子萌发和幼苗定居阶段产生影响。 本文以青藏高原东缘亚高山针叶林主要树种云杉为研究对象，研究云杉种子萌发及幼苗的生长和生理对UV-B���射增强与气候变暖的响应。采用UV-B���光灯（UV-lamp）来模拟增强的UV-B 辐射，此外，采用开顶式有机玻璃罩（OTCs）来模拟气候变暖。本试验包括四个处理：（1）大气UV-B 辐射+大气温度（C）；（2）大气UV-B 辐射+模拟气候变暖（W）；（3）增强的UV-B���射+大气温度（U）；（4）增强的UV-B���射+模拟气候变暖（U+W）。 根据本试验结果，UV-B���射增强对云杉种子萌发没有显著影响，它对萌发云杉幼苗的影响主要体现在幼叶展开以后。根据两年的试验结果，增强的UV-B���射降低了云杉幼苗抗氧化酶活性，降低了抗氧化物质的含量，此外，造成了膜质的过氧化，表现为MDA在针叶中的积累。增强的UV-B���射处理萌发云杉幼苗两年后，幼苗的生长受到显著抑制。我们的结果显示，OTCs分别提高了空气（10 cm）和土壤（5 cm）温度1.74℃和0.94 ℃。增温显著地促进了云杉种子提前萌发，提高了萌发速率和萌发比率，而且，明显地促进了幼苗的生长，表现为株高和生物量累积的显著增长。此外增温还有利于云杉幼苗根的伸长生长以及生物量的累积，这可以使云杉幼苗更好地利用土壤中的水分和营养元素。 根据本试验结果，温度升高显著地促进了增强UV-B���射下云杉萌发幼苗的生长，这说明，温度升高缓解了UV-B���射增强对云杉萌发幼苗的负面影响。这种缓解作用可能是温度升高对UV-B���射增强处理下幼苗的抗氧化系统活性改善的结果。温度升高还缓解了高UV-B���射对云杉幼苗根生长的抑制作用，这也可能是增温缓解伤害的原因之一。此外，根据我们的试验结果，增温与UV-B���射增强联合作用（U+W）下云杉萌发幼苗的生长状况好于大气温度与大气UV-B���射联合（C）处理，表现为株高、地径、根长和生物量积累均高于C处理，因此可以推断，UV-B���射增强与气候变暖同时存在对萌发幼苗在两年之内的生长没有产生抑制作用，也就是说，气候变暖的缓解作用完全弥补了UV-B���射增强的有害作用。 同样，增强的UV-B���射显著影响了云杉幼苗的光合作用，表现为净光合速率（Pn）和表观量子效率（Φ）的提高，此外，根据我们的试验结果，它还造成了PSII的光抑制。增强的UV-B���射显著抑制了云杉幼苗对营养元素的吸收，表现为大量营养元素、碳、钙、镁和锌含量的降低，但是，它却显著促进了铁在植株体内的积累。增温显著地提高了净光合速率，但是，它对光系统II（PSII）的光化学效率影响不大。温度升高缓解了UV-B���强对云杉幼苗光合作用的伤害，表现为净光合速率、表观量子效率以及PSII光化学效率的提高。此外，温度升高还缓解了UV-B���射增强对离子吸收的抑制作用。 Enhanced UV-B radiation due to the reduction of O3 layer and global warming induced by increased greenhouse gases in the air have become the two pressing aspects of global climate changes. Moreover, enhanced UV-B radiation and warming have profound and long-term impacts on terrestrial plants and ecosystems, and the studies focusing on the two factors have attracted many attentions. Qinghai-Tibetan Plateau is the third in elevation in the world, and enhanced UV-B radiation and climate warming are especially prominent in this region. Our research located in the main forest belt in the eastern Qinghai-Tibetan Plateau where large areas of subalpine coniferous forests distributed. Based on that, we carried out a research to study the effects of enhanced UV-B radiation and climate warming on seed germination and seedlings growth of seedlings which are the important basic stage in forest regeneration. This research was arranged by a complete factorial design and included two factors (UV-B radiation and temperature) with two levels. The UV-lamps were used to manipulate the supplemental UV-B radiation and open-top chambers (OTCs) were adopted to increase temperature. The four treatments were: (1) C, ambient UV-B without warming; (2) U, enhanced UV-B without warming; (3) W, ambient UV-B with OTCs warming; (4) U+W, enhanced UV-B with OTCs warming. The main results were exhibited as follows: 1. Based on our results in this research, OTCs increased temperature on average 1.74℃ in air (10 cm above ground) and 0.92 ℃ in soil (5 cm beneath ground). Furthermore, OTCs also slightly reduced soil moisture and relative air humidity, however, the differences was not statistically significant. 2. Our results showed that enhanced UV-B had no significant effects on the seeds germination of P. asperata. Enhanced UV-B affected sprouts of P. asperata until the needles unfolded. During two years, enhanced UV-B inhibited the efficiency of the antioxidant defense systems, and as a result, it induced oxidant stress and the accumulation of MDA in needles. After two years of exposure to enhanced UV-B, the growth of P. asperata sprouts was markedly restrained compared with those under ambient UV-B radiation and temperature (C). Warming significantly stimulated the germination speed and increased the germination rate of P. asperata seeds. In the next place, it prominently facilitated the growth of P. asperata sprouts, represented as improvements in stem elongation and biomass accumulation. Furthermore, warming also increased root growth of P. asperata sprouts, which could made sprouts more efficient to use water and nutrient elements in soil. In this research, warming alleviated the deleterious effects of enhanced UV-B on P. asperata sprouts. It markedly stimulated the growth of P. asperata sprouts exposed to enhanced UV-B. The ease effects of warming on the abilities of the antioxidant defense systems might account for its amending effects on growth. After two years of exposure to enhanced UV-B radiation and warming, the growth of P. asperata sprouts was better than those under ambient UV-B radiation without warming (C), which could be seen from the higher plant height, basal diameter, root length and total biomass accumulation compared with C. 3. Enhanced UV-B radiation significantly influenced the photosynthesis processes of two-year old P. asperata seedlings. Our results showed that enhanced UV-B reduced the net photosynthetic rate (Pn) and the apparent quantum efficiency (Φ), and induced photoinhibition of photosynthetic system II (PSII). Enhanced UV-B significantly decreased the concentration of nitrogen (N), phosphorous (P), potassium (K), calcium (Ca), magnesium (Mg) and zinc (Zn), however, it increased the accumulation of iron (Fe) in the whole plant of P. asperata seedlings. Warming significantly stimulated Pn of P. asperata seedlings but it had no prominent impacts on the photochemical efficiency of PSII. In our research, warming also alleviated the harmful effects of enhanced UV-B on photosynthesis and absorption of ions of P. asperata seedlings. It increased Pn, Φ and the photochemical efficiency of PSII in seedlings exposed to enhanced UV-B. Moreover, warming also increased the absorption of ions of the seedlings exposed to enhanced UV-B radiation.