阵列光栅压缩器的空域特性

引入角度偏差、位移偏差作为拼接光栅系统的物理参数，定义了拼接光栅的孔径函数，利用傅里叶角谱理论研究了高斯脉冲入射拼接光栅压缩器后的远场分布特性。研究表明；出射脉冲仍然是高斯型脉冲，但包络中心发生偏移，偏移量由角度偏差量和光束口径决定；位移偏差引入的相位随着拼接光栅压缩器传递，其对远场焦斑的影响，取决于每片子光栅的非整数倍光栅常数的横向位移偏差和纵向位移偏差的综合作用。通过数值计算得到了各维偏差对阵列光栅压缩器空域特性的影响，计算表明：光栅面外角度偏差（俯仰左右）和条纹平行度偏差都必须控制在1μrad以内，

有限尺寸光栅压缩器的优化设计

分析了超短超强激光系统中有限尺寸光栅压缩器设计的关键物理参数及约束条件,得到了压缩器优化的三项基本变量。给出了一种输出能量最大化的压缩器优化方法,进而确定了有限尺寸光栅压缩器的最大工作能力。针对传统的圆光束方案提出了改进的椭圆光束方案,增大了聚焦能量,减小了焦斑尺寸,提高了峰值聚焦功率密度。通过数值模拟对500 mm曝光口径介质膜光栅在圆光束和椭圆光束两种方案下的最大输出能力进行分析比较,指出单块光栅在椭圆光束方案下可以实现500 fs,500 J,1 PW的脉冲输出。

Effect of elliptical manufacture error of an axicon on the diffraction-free beam patterns

Based on the generalized Huygens-Fresnel diffraction integral theory and the stationary-phase method, we analyze the influence on diffraction-free beam patterns of an elliptical manufacture error in an axicon. The numerical simulation is compared with the beam patterns photographed by using a CCD camera. Theoretical simulation and experimental results indicate that the intensity of the central spot decreases with increasing elliptical manufacture defect and propagation distance. Meanwhile, the bright rings around the central spot are gradually split into four or more symmetrical bright spots. The experimental results fit the theoretical simulation very well. (C) 2008 Society of Photo-Optical Instrumentation Engineers.

Modelagem sedimentar de sistemas deltaicos altamente eficientes: aplicação para o preenchimento sedimentar do terciário superior da bacia de Bengala, porção nordeste da Índia

A bacia de Bengala, localizada a Nordeste da Índia tem uma história evolutiva extraordinária, diretamente controlada bela fragmentação do Gondwana. O início da formação desta bacia é considerada como sendo relacionada ao final do evento da quebra, datado em 126 Ma quando a Índia separou do continente Antártico e da Austrália. Desde então, a placa continental Indiana viajou do pólo sul a uma velocidade muito rápida (16 cm/a) chocando-se com o hemisfério norte e fundindo-se com a Placa Eurasiana. Durante a viagem passou por cima de um hot spot, onde hoje estão localizadas as ilhas Seicheles, resultando em um dos maiores derrames de lava basáltica do mundo, conhecido como Deccan Trap. Na região onde a bacia de Bengala foi formada, não houve aporte significativo de sedimentos siliciclásticos, resultando na deposição de uma espessa plataforma carbonática do Cretáceo tardio ao Eoceno. Após este período, devido a colisão com algumas microplacas e a amalgamação com a Placa Eurasiana, um grande volume sedimentar siliciclástico foi introduzido para a bacia, associado também ao soerguimento da cadeia de montanhas dos Himalaias. Atualmente, a Bacia de Bengala possui mais de 25 km de sedimentos, coletados neste depocentro principal. Nesta dissertação foram aplicados conceitos básicos de sismoestratigrafia na interpretação de algumas linhas regionais. As linhas sísmicas utilizadas foram adquiridas recentemente por programa sísmico especial, o qual permitiu o imageamento sísmico a mais de 35km dentro da litosfera (crosta continental e transicional). O dado permitiu interpretar eventos tectônicos, como a presença dos Seawards Dipping Reflectors (SDR) na crosta transicional, coberto por sedimentos da Bacia de Bengala. Além da interpretação sísmica amarrada a alguns poços de controle, o programa de modelagem sedimentar Beicip Franlab Dionisos, foi utilizado para modelar a história de preenchimento da bacia para um período de 5,2 Ma. O nível relativo do nível do mar e a taxa de aporte sedimentar foram os pontos chaves considerados no modelo. Através da utilização dos dados sísmicos, foi possível reconhecer dez quebras de plataformas principais, as quais foram utilizadas no modelo, amarrados aos seus respectivos tempos geológico, provenientes dos dados dos poços do Plioceno ao Holoceno. O resultado do modelo mostrou que a primeira metade modelada pode ser considerada como um sistema deposicional retrogradacional, com algum picos transgressivos. Este sistema muda drasticamente para um sistema progradacional, o qual atuou até o Holoceno. A seção modelada também mostra que no período considerado o total de volume depositado foi em torno de 2,1 x 106 km3, equivalente a 9,41 x 1014 km3/Ma.

光谱色散后的相位调制光束衍射特性研究

用数值方法研究了激光驱动器系统中使用光谱色散平滑单元后光束的衍射特性、模拟结果表明，光谱色散会使光束衍射光斑变大，近场空间强度均匀性改善，而远场光斑内部存在光强接近于均匀分布的区域．进一步分析了光谱色散平滑单元中相位调制器的调制深度、调制频率及光栅色散系数等主要元件参数对光束传输特性的影响，发现在一定情况下光斑内部会出现较强的强度调制。

High focal depth with a pure-phase apodizer

High-density optical data storage requires high-numerical-aperture (NA) lenses and short wavelengths, But, with increasing NA and decreasing wavelength, the depth of focus (DOF) decreases rapidly. We propose to use pure-phase superresolution apodizers to optimize the axial intensity distribution and extend the DOF of an optical pickup. With this kind of apodizer, the expected DOF can be 2-4.88 times greater than that of the original system, and the spot size will be smaller than that of the original system. (C) 2001 Optical Society of America.

Phase-shifting apodizer for next-generation digital versatile disk

The next generation digital versatile disk (DVD) using blue lasers will have a capacity of 13 to 15 Gbytes. Compared with current DVD, the wavelength will be shorter and the numerical aperture (NA) will be higher. But with the increase of NA and decrease of wave length, the depth of focus (DOF) decrease rapidly, which makes it hard for the servo-system to track. We propose an optimized three-portion phase-shifting apodizer to increase the depth of focus and at the same time minimize the spot size, which makes the DOF of next generation DVD comparable to current DVD. The simulation result shows that an optical system with this apodizer also has a good defocus characteristic. (C) 2001 Society of Photo-Optical Instrumentation Engineers.

Crystallization of amorphous Ge2Sb2Te5 films induced by a single femtosecond laser pulse

Crystallization is achieved in amorphous Ge2Sb2Te5 films upon irradiation with a single femtosecond laser pulse. Transmission electron microscopy images evidence the morphology of the crystallized spot which depends on the fluence of the ferntosecond laser pulse. Fine crystalline grains are induced at low fluence, and the coarse crystalline grains are obtained at high fluence. At the damage fluence, ablation of the films occurs. (C) 2004 Elsevier Ltd. All rights reserved.

Femtosecond laser pulse irradiation of Sb-rich AgInSbTe films: Scanning electron microscopy and atomic force microscopy investigations

The single-layer and multilayer Sb-rich AgInSbTe films were irradiated by a single femtosecond laser pulse with the duration of 120 fs. The morphological feature resulting from the laser irradiation have been investigated by scanning electron microscopy and atom force microscopy. For the single-layer film, the center of the irradiated spot is a dark depression and the border is a bright protrusion; however, for the multilayer film, the center morphology changes from a depression to a protrusion as the energy increases. The crystallization threshold fluence of the single-layer and the multilayer films is 46.36 mJ/cm(2), 63.74 mJ/cm(2), respectively.

Simulation of an apodizer's effect for high-density optical storage

The effect of an apodizer with two parallel taper refractive surfaces is theoretically investigated for high-density optical storage. The apodizer may modulate an incident Gaussian beam into an annular beam. Simulation shows that with the increasing inner radius of the modulated beam, the focal spot shrinks obviously. The depolarization effect gets strong simultaneously, which induces the circular symmetry loss of the focal spot. In this process, pattern density of the orthogonal and longitudinal diffractive fields increases remarkably.

Optical near-field simulation of Sb thin film thermal lens and its application in optical recording

Using the finite-difference-time-domain method, the near-field optical distribution and properties of Sb thin film thermal lens are calculated and simulated. The results show as follows. Within the near-field distance to the output plane of thermal lens, the spot size is approximately 100 nm, and its intensity is greatly enhanced, which is higher than that of incident light. The spot shape gradually changes from ellipse to round at the distance of more than 12 nm to the output plane. The above-simulated results are further demonstrated by the static optical recording experiment. (C) 2005 American Institute of Physics.

Morphological characteristics of amorphous Ge2Sb2Te5 films after a single femtosecond laser pulse irradiation

The morphology of materials resulting from laser irradiation of the single-layer and the multilayer amorphous Ge2Sb2Te5 films using 120 fs pulses at 800 nm was observed using scanning electron microscopy and atomic force microscopy. For the single-layer film, the center of the irradiated spot is depression and the border is protrusion, however, for the multilayer film, the center morphology changes from a depression to a protrusion as the increase of the energy. The crystallization threshold fluence of the single-layer and the multilayer film is 22 and 23 mJ/cm(2), respectively. (c) 2005 Elsevier B.V. All rights reserved.

Super-resolution with a nonlinear thin film: Beam reshaping via internal multi-interference

In laser applications, the size of the focus spot can be reduced beyond the diffraction limit with a thin film of strong nonlinear optical Kerr effect. We present a concise theoretical simulation of the device. The origin of the super-resolution is found to be mainly from the reshaping effect due to the strongly nonlinear refraction mediated multi-interference inside the thin film. In addition, both diffraction and self-focusing effects have been explored and found negligible for highly refractive and ultrathin films in comparison with the reshaping effect. Finally, the theoretic model has been verified in experiments with single Ge2Sb2Te5 film and SiN/Si/SiN/Ge2Sb2Te2 multilayer structures. (c) 2006 American Institute of Physics.

Investigation on the static recording characteristic of super-resolution near-field structure with antimony mask layer

Static recording characteristic of super-resolution near-field structure with antimony (Sb) is investigated in this paper. The recording marks are observed by a scanning electron microscopy (SEM), a high-resolution optical microscopy with a CCD camera and an atomic force microscopy (AFM). The super-resolution mechanism is also analyzed based on these static recording marks. Results show that the light reaching on recording layer is composed of two parts, one is the linear transmissive light (propagating field) and the other is the nonlinear evanescent light in the optical near field. The evanescent light may be greatly enhanced in the center of the spot because Sb will transit from a semiconductor to a metal when it is melted under the high laser power irradiation. This local melted area in the spot center may be like a metal tip in the optical near field that can collect and enhance the information that is far beyond the diffraction limit, which leads to the super-resolution recording and readout. (c) 2005 Elsevier Ltd. All rights reserved.

Design of super-resolution filters with a Gaussian beam in optical data storage systems

Super-resolution filters based on a Gaussian beam are proposed to reduce the focusing spot in optical data storage systems. Both of amplitude filters and pure-phase filters are designed respectively to gain the desired intensity distributions. Their performances are analysed and compared with those based on plane wave in detail. The energy utilizations are presented. The simulation results show that our designed super-resolution filters are favourable for use in optical data storage systems in terms of performance and energy utilization.