Analysis of the lateral diffuse metal-oxide semiconductor (LDMOS) power amplifier for cellular base stations

The primary purpose of this thesis was to present a theoretical large-signal analysis to study the power gain and efficiency of a microwave power amplifier for LS-band communications using software simulation. Power gain, efficiency, reliability, and stability are important characteristics in the power amplifier design process. These characteristics affect advance wireless systems, which require low-cost device amplification without sacrificing system performance. Large-signal modeling and input and output matching components are used for this thesis. Motorola's Electro Thermal LDMOS model is a new transistor model that includes self-heating affects and is capable of small-large signal simulations. It allows for most of the design considerations to be on stability, power gain, bandwidth, and DC requirements. The matching technique allows for the gain to be maximized at a specific target frequency. Calculations and simulations for the microwave power amplifier design were performed using Matlab and Microwave Office respectively. Microwave Office is the simulation software used in this thesis. The study demonstrated that Motorola's Electro Thermal LDMOS transistor in microwave power amplifier design process is a viable solution for common-source amplifier applications in high power base stations. The MET-LDMOS met the stability requirements for the specified frequency range without a stability-improvement model. The power gain of the amplifier circuit was improved through proper microwave matching design using input/output-matching techniques. The gain and efficiency of the amplifier improve approximately 4dB and 7.27% respectively. The gain value is roughly .89 dB higher than the maximum gain specified by the MRF21010 data sheet specifications. This work can lead to efficient modeling and development of high power LDMOS transistor implementations in commercial and industry applications.

Dark soliton generation from semiconductor optical amplifier gain medium in ring fiber configuration

We have investigated the mode-lock operation from a semiconductor optical amplifier (SOA) gain chip in the ring fibre configuration. At lower pump currents, the laser generates dark soliton pulses both at the fundamental repetition rate of 39 MHz and supports up to the 6th harmonic order corresponding to 234-MHz repetition rate with an output power of ∼2.1 mW. At higher pump currents, the laser can be switched between the bright, dark and concurrent bright and dark soliton generation regimes.

Self-mode-locked semiconductor disk lasers

In the last decade, vertical-external-cavity surface-emitting lasers (VECSELs) have become promising sources of ultrashort laser pulses. While the mode-locked operation has been strongly relying on costly semiconductor saturable-Absorber mirrors for many years, new techniques have been found for pulse formation. Mode-locking VECSELs are nowadays not only achievable by using a variety of saturable absorbers, but also by using a saturable-Absorber-free technique referred to as self-mode-locking (SML), which is to be highlighted here.

Characterization of resistivity of Sb2S3 semiconductor nanowires by conductive AFM and in-situ methods

Conductive AFM and in situ methods were used to determine contact resistance and resistivity of individual Sb2S3 nanowires. Nanowires were deposited on oxidized Si surface for in situ measurements and on Si surface with macroelectrodes for conductive AFM (C-AFM) measurements. Contact resistance was determined by measurement of I(V) characteristics at different distances from the nanowire contact with the macroelectrode and resistivity of nanowires was determined. Sb2S3 is a soft material with low adhesion force to the surface and therefore special precautions were taken during measurements.

Organic functionalisation, doping and characterisation of semiconductor surfaces for future CMOS device applications

Organic Functionalisation, Doping and Characterisation of Semiconductor Surfaces for Future CMOS Device Applications Semiconductor materials have long been the driving force for the advancement of technology since their inception in the mid-20th century. Traditionally, micro-electronic devices based upon these materials have scaled down in size and doubled in transistor density in accordance with the well-known Moore’s law, enabling consumer products with outstanding computational power at lower costs and with smaller footprints. According to the International Technology Roadmap for Semiconductors (ITRS), the scaling of metal-oxide-semiconductor field-effect transistors (MOSFETs) is proceeding at a rapid pace and will reach sub-10 nm dimensions in the coming years. This scaling presents many challenges, not only in terms of metrology but also in terms of the material preparation especially with respect to doping, leading to the moniker “More-than-Moore”. Current transistor technologies are based on the use of semiconductor junctions formed by the introduction of dopant atoms into the material using various methodologies and at device sizes below 10 nm, high concentration gradients become a necessity. Doping, the controlled and purposeful addition of impurities to a semiconductor, is one of the most important steps in the material preparation with uniform and confined doping to form ultra-shallow junctions at source and drain extension regions being one of the key enablers for the continued scaling of devices. Monolayer doping has shown promise to satisfy the need to conformally dope at such small feature sizes. Monolayer doping (MLD) has been shown to satisfy the requirements for extended defect-free, conformal and controllable doping on many materials ranging from the traditional silicon and germanium devices to emerging replacement materials such as III-V compounds This thesis aims to investigate the potential of monolayer doping to complement or replace conventional doping technologies currently in use in CMOS fabrication facilities across the world.

Optically injected multi-mode semiconductor lasers

As a device, the laser is an elegant conglomerate of elementary physical theories and state-of-the-art techniques ranging from quantum mechanics, thermal and statistical physics, material growth and non-linear mathematics. The laser has been a commercial success in medicine and telecommunication while driving the development of highly optimised devices specifically designed for a plethora of uses. Due to their low-cost and large-scale predictability many aspects of modern life would not function without the lasers. However, the laser is also a window into a system that is strongly emulated by non-linear mathematical systems and are an exceptional apparatus in the development of non-linear dynamics and is often used in the teaching of non-trivial mathematics. While single-mode semiconductor lasers have been well studied, a unified comparison of single and two-mode lasers is still needed to extend the knowledge of semiconductor lasers, as well as testing the limits of current model. Secondly, this work aims to utilise the optically injected semiconductor laser as a tool so study non-linear phenomena in other fields of study, namely ’Rogue waves’ that have been previously witnessed in oceanography and are suspected as having non-linear origins. The first half of this thesis includes a reliable and fast technique to categorise the dynamical state of optically injected two mode and single mode lasers. Analysis of the experimentally obtained time-traces revealed regions of various dynamics and allowed the automatic identification of their respective stability. The impact of this method is also extended to the detection regions containing bi-stabilities. The second half of the thesis presents an investigation into the origins of Rogue Waves in single mode lasers. After confirming their existence in single mode lasers, their distribution in time and sudden appearance in the time-series is studied to justify their name. An examination is also performed into the existence of paths that make Rogue Waves possible and the impact of noise on their distribution is also studied.

Modeling and simulation of bulk gallium nitride power semiconductor devices

Bulk gallium nitride (GaN) power semiconductor devices are gaining significant interest in recent years, creating the need for technology computer aided design (TCAD) simulation to accurately model and optimize these devices. This paper comprehensively reviews and compares different GaN physical models and model parameters in the literature, and discusses the appropriate selection of these models and parameters for TCAD simulation. 2-D drift-diffusion semi-classical simulation is carried out for 2.6 kV and 3.7 kV bulk GaN vertical PN diodes. The simulated forward current-voltage and reverse breakdown characteristics are in good agreement with the measurement data even over a wide temperature range.

Few-layer, large-area, 2D covalent organic framework semiconductor thin films.

In this work, we synthesize large-area thin films of a conjugated, imine-based, two-dimensional covalent organic framework at the solution/air interface. Thicknesses between ∼2-200 nm are achieved. Films can be transferred to any desired substrate by lifting from underneath, enabling their use as the semiconducting active layer in field-effect transistors.

Effect of II‐VI Semiconductor Nanomaterials and Electron Irradiation on Polystyrene (PS) & Poly(ethylene‐co‐vinyl acetate) (EVA)

Organic-inorganic nanocomposites combine unique properties of both the constituents in one material. Among this group of materials, clay based as well as ZnO, TiO2 nanocomposites have been found to have diverse applications. Optoelectronic devices require polymerinorganic systems to meet certain desired properties. Dielectric properties of conventional polymers like poly(ethylene-co-vinyl acetate) (EVA) and polystyrene (PS) may also be tailor tuned with the incorporation of inorganic fillers in very small amounts. Electrical conductivity and surface resistivity of polymer matrices are found to improve with inorganic nanofillers. II-VI semiconductors and their nano materials have attracted material scientists because of their unique optical properties of photoluminescence, UV photodetection and light induced conductivity. Cadmium selenide (CdSe), zinc selenide (ZnSe) and zinc oxide (ZnO) are some of the most promising members of the IIVI semiconductor family, used in light-emitting diodes, nanosensors, non-linear optical (NLO) absorption etc. EVA and PS materials were selected as the matrices in the present study because they are commercially used polymers and have not been the subject of research for opto-electronic properties with semiconductor nanomaterials

SUPPLIER INVOLVEMENT IN NEW PRODUCT DEVELOPMENT: A CASE STUDY FROM THE SEMICONDUCTOR INDUSTRY

Global competition requires that the companies adapt themselves to technological changes rapidly, develop new products, reduce the cost, shorten the time to market, and increase the quality. In this context, supplier involvement in New Product Development (NPD) is determinant for a company to respond to the requirements of the increasingly dynamic markets. The main purpose of the paper is to demonstrate the importance of supplier involvement in NPD, buyer-supplier relationships and their effects on buyer’s NPD process, highlighting the benefits of supplier involvement, the barriers, the strategic aspects and industry aspects. These issues are addressed with a case study from the semiconductor industry. Besides helping to understand NPD in the semiconductor industry, the contribution and fi ndings of this work are clear: the results achieved confirm the findings of studies referred in the literature review, and confirm that the semiconductor industry sector requires a closer and more complex relationship structure with suppliers, given the specificities and challenges of the sector, such as rapid technological changes, permanent innovation, global competition, reduction of cost and time-to-market cycle, increased capacity, among other. The main contribution of the paper to the scientific literature and to managers is the better understanding of the buyer-supplier relationships in NPD in the semiconductor industry.

Wavelength converters based on four-wave mixing in semiconductor optical amplifiers for advanced modulation formats

Les convertisseurs de longueur d’onde sont essentiels pour la réalisation de réseaux de communications optiques à routage en longueur d’onde. Dans la littérature, les convertisseurs de longueur d’onde basés sur le mélange à quatre ondes dans les amplificateurs optiques à semi-conducteur constituent une solution extrêmement intéressante, et ce, en raison de leurs nombreuses caractéristiques nécessaires à l’implémentation de tels réseaux de communications. Avec l’émergence des systèmes commerciaux de détection cohérente, ainsi qu’avec les récentes avancées dans le domaine du traitement de signal numérique, il est impératif d’évaluer la performance des convertisseurs de longueur d’onde, et ce, dans le contexte des formats de modulation avancés. Les objectifs de cette thèse sont : 1) d’étudier la faisabilité des convertisseurs de longueur d’onde basés sur le mélange à quatre ondes dans les amplificateurs optiques à semi-conducteur pour les formats de modulation avancés et 2) de proposer une technique basée sur le traitement de signal numérique afin d’améliorer leur performance. En premier lieu, une étude expérimentale de la conversion de longueur d’onde de formats de modulation d’amplitude en quadrature (quadrature amplitude modulation - QAM) est réalisée. En particulier, la conversion de longueur d’onde de signaux 16-QAM à 16 Gbaud et 64-QAM à 5 Gbaud dans un amplificateur optique à semi-conducteur commercial est réalisée sur toute la bande C. Les résultats démontrent qu’en raison des distorsions non-linéaires induites sur le signal converti, le point d’opération optimal du convertisseur de longueur d’onde est différent de celui obtenu lors de la conversion de longueur d’onde de formats de modulation en intensité. En effet, dans le contexte des formats de modulation avancés, c’est le compromis entre la puissance du signal converti et les non-linéarités induites qui détermine le point d’opération optimal du convertisseur de longueur d’onde. Les récepteurs cohérents permettent l’utilisation de techniques de traitement de signal numérique afin de compenser la détérioration du signal transmis suite à sa détection. Afin de mettre à profit les nouvelles possibilités offertes par le traitement de signal numérique, une technique numérique de post-compensation des distorsions induites sur le signal converti, basée sur une analyse petit-signal des équations gouvernant la dynamique du gain à l’intérieur des amplificateurs optiques à semi-conducteur, est développée. L’efficacité de cette technique est démontrée à l’aide de simulations numériques et de mesures expérimentales de conversion de longueur d’onde de signaux 16-QAM à 10 Gbaud et 64-QAM à 5 Gbaud. Cette méthode permet d’améliorer de façon significative les performances du convertisseur de longueur d’onde, et ce, principalement pour les formats de modulation avancés d’ordre supérieur tel que 64-QAM. Finalement, une étude expérimentale exhaustive de la technique de post-compensation des distorsions induites sur le signal converti est effectuée pour des signaux 64-QAM. Les résultats démontrent que, même en présence d’un signal à bruité à l’entrée du convertisseur de longueur d’onde, la technique proposée améliore toujours la qualité du signal reçu. De plus, une étude du point d’opération optimal du convertisseur de longueur d’onde est effectuée et démontre que celui-ci varie en fonction des pertes optiques suivant la conversion de longueur d’onde. Dans un réseau de communication optique à routage en longueur d’onde, le signal est susceptible de passer par plusieurs étages de conversion de longueur d’onde. Pour cette raison, l’efficacité de la technique de post-compensation est démontrée, et ce pour la première fois dans la littérature, pour deux étages successifs de conversion de longueur d’onde de signaux 64-QAM à 5 Gbaud. Les résultats de cette thèse montrent que les convertisseurs de longueur d’ondes basés sur le mélange à quatre ondes dans les amplificateurs optiques à semi-conducteur, utilisés en conjonction avec des techniques de traitement de signal numérique, constituent une technologie extrêmement prometteuse pour les réseaux de communications optiques modernes à routage en longueur d’onde.

Piezo force microscopy and peakforce tuna measurements of III-V semiconductor nanowires

GaN, InP and GaAs nanowires were investigated for piezoelectric response. Nanowires and structures based on them can find wide applications in areas purposes such as nanogenarators, nanodrives, Solar cells and other perspective areas. Experemental measurements were carried out on AFM Bruker multimode 8 and data was handled with Nanoscope software. AFM techniques permitted not only to visualize the surface topography, but also to show distribution of piezoresponse and allowed to calculate its properties. The calculated values are in the same range as published by other authors.

The Redox Potentials of n-type Colloidal Semiconductor Nanocrystals

Thesis (Ph.D.)--University of Washington, 2016-08

Investigation of the Nucleation and Growth of Colloidal Indium Phosphide: from Molecular Precursors to Semiconductor Nanocrystals through In37P20(O2CR)51 as a Magic-Size Intermediate

Thesis (Ph.D.)--University of Washington, 2016-06

Photochemical dynamics of laser-irradiated semiconductor nanostructures

Thesis (Ph.D.)--University of Washington, 2016-08