Electronic structures of wurtzite ZnO and ZnO/MgZnO quantum well

The band structures of wurtzite ZnO are calculated using the empirical pseudopotential method (EPM). The 8 parameters of the Zn and O atom pesudopotential form factors with Schluter's formula are obtained. The effective mass parameters are extracted by using k.p Hamiltonian to fit the EPM results. The calculated band edge energies (E-g, E-A, E-B, and E-C) at Gamma point are in good agreement with experimental results. The ordering of ZnO at the top of valence band is found to be A(Gamma(7))-B(Gamma(9))-C(Gamma(7)) due to a negative spin-orbit (SO) splitting. Based on the band parameters obtained, the valence hole subbands of wurzite ZnO/MgxZn1-xO tensile-strained quantum wells (QWs) with different well widths and Mg compositions are calculated using 6-band k.p method. (c) 2005 Elsevier B.V. All rights reserved.

Structural optimizations of SOI-based single-mode rib waveguide bends

Effects of structure parameters on bend loss of rib silicon-on-insulator (Sol) bend waveguides have been analyzed by means of effective index method (EIM) and 2D bend loss formula. The simulation results indicate that the bend loss decreases with the increase of bend radius and waveguide width, as well as with the decrease of the step factor of the rib waveguide. Moreover, the optional structure parameters have been found when bend waveguides are single-mode.

When is `partial' adequate? A logic-based proof technique using partial specifications

A technique is presented for ascertaining when a (finite-state) partial process specification is adequate, in the sense of being specified enough, for contexts in which it is to be used. The method relies on the automatic generation of a modal formula from the partial specification; if the remainder of the network satisfies this formula, then any process that meets the specification is guaranteed to ensure correct behavior of the overall system. Using the results, the authors develop compositional proof rules for establishing the correctness of networks of parallel processes and illustrate their use with several examples

mod 2n加运算与F2上异或运算差值的概率分布和递推公式

提出了一种计算单mod 2~n加运算与F_2上的异或运算的“异或差值”概率分布的有效算法，该算法的计算复杂度为O（（n-1）／2），与Maximov的结果相比计算复杂度更低．对于多mod 2~n加运算的情形，给出了多mod 2~n加运算与F_2上的异或（XOR）运算的“异或差值”的递推计算公式．

Unified theory for Goos-Hanchen and imbert-fedorov effects

A unified theory is advanced to describe both the lateral Goos-Hanchen (GH) effect and the transverse Imbert-Fedorov (IF) effect, through representing the vector angular spectrum of a three-dimensional light beam in terms of a two-form angular spectrum consisting of its two orthogonal polarized components. From this theory, the quantization characteristics of the GH and IF displacements are obtained, and the Artmann formula for the GH displacement is derived. It is found that the eigenstates of the GH displacement are the two orthogonal linear polarizations in this two-form representation, and the eigenstates of the IF displacement are the two orthogonal circular polarizations. The theoretical predictions are found to be in agreement with recent experimental results.

Philip公式确定吸渗率时间尺度研究

选用直径5 cm和10 cm的盘式吸渗仪,对杨凌土(粘土)和神木砂黄土(砂壤土)两种质地的土壤在1 cm、3 cm6、cm9、cm和12 cm水头5种负压下进行了室内盘式吸渗仪三维吸渗实验,选取Vandervaere公式作为参考模型,对Philip公式确定吸渗率的时间尺度选取进行了分析。结果表明,对两种质地的土壤,在相同盘径下,随着负压的降低,吸渗率随之减小;在相同负压下,盘径越小,吸渗率越大;质地较砂的砂黄土吸渗率明显大于质地较粘的土的吸渗率。从相对误差来看,两种质地土壤吸渗率均被高估;在同一盘径下,随着负压的减小,误差值逐渐降低;即在选取的时间范围内,负压越低,计算吸渗率的准确性越高。对土而言,5 cm盘径下-12 cm水头1、0 cm盘径下-9 cm水头和-12 cm水头时确定吸渗率的适宜时间分别为30~40 s和40~50 s;其余确定吸渗率的适宜时间均应小于30 s;对砂黄土而言,10 cm盘径下-9 cm水头和-12 cm水头时确定吸渗率的适宜时间分别为30~40 s和40~50 s,其余确定吸渗率的适宜时间也均应小于30 s。对于质地较砂的土壤推荐使用大盘径进行盘式吸渗仪实验。

Characterization of recombination centres in n-type Hg1-xCdxTe

The defect levels in Hg1-xCdxTe P+N junction photodiodes (x = 0.4) were first studied using deep-level transient spectroscopy. Two electron traps, E(1)(0.06) and E(2)(0.15), and two hole traps, H-1(0.075) and H-2(0.29), were obtained, Characteristic parameters-the minority lifetime of the devices and the dynamic resistance-area product at zero bias-are estimated according to these levels. Results show that these two minority levels may be important in controlling lifetime. We have studied the recombination mechanism of the hole trap H-2(0.29) further. It has a large activation energy and satisfies the formula sigma(T) = sigma(x) exp(-E(F)/E(T)). This reflects the fact that its recombination mechanism is multiphonon nonradiative recombination, which is rarely reported in narrow-bandgap materials.

Spin splitting modulated by uniaxial stress in InAs nanowires

We theoretically study the electronic structure, spin splitting, effective mass, and spin orientation of InAs nanowires with cylindrical symmetry in the presence of an external electric field and uniaxial stress. Using an eight-band k center dot p theoretical model, we deduce a formula for the spin splitting in the system, indicating that the spin splitting under uniaxial stress is a nonlinear function of the momentum and the electric field. The spin splitting can be described by a linear Rashba model when the wavevector and the electric field are sufficiently small. Our numeric results show that the uniaxial stress can modulate the spin splitting. With the increase of wavevector, the uniaxial tensile stress first restrains and then amplifies the spin splitting of the lowest electron state compared to the no strain case. The reverse is true under a compression. Moreover, strong spin splitting can be induced by compression when the top of the valence band is close to the bottom of the conductance band, and the spin orientations of the electron stay almost unchanged before the overlap of the two bands.