Reflectance anisotropy spectroscopy assessment of the MOVPE nucleation of GaInP on Germanium (100)

This work summarizes the observations made on the variation and time evolution of the reflectanceanisotropy signal during the MOVPE growth of GaInPnucleation layers on Germanium substrates. This in situ monitoring tool is used to assess the impact of different nucleation routines and reactor conditions on the quality of the layers grown. This comparison is carried out by establishing a correlation between reflectanceanisotropy signature at 2.1 eV and the morphology of the epilayers evaluated by atomic force microscopy (AFM). This paper outlines the potential of reflectanceanisotropy to predict, explore, and therefore optimize, the best growth conditions that lead to a high quality III–V epilayer on a Ge substrate

Internal quantum efficiency of III-nitride quantum dot superlattices grown by plasma-assisted molecular-beam epitaxy

We present a study of the optical properties of GaN/AlN and InGaN/GaN quantum dot (QD) superlattices grown via plasma-assisted molecular-beam epitaxy, as compared to their quantum well (QW) counterparts. The three-dimensional/two-dimensional nature of the structures has been verified using atomic force microscopy and transmission electron microscopy. The QD superlattices present higher internal quantum efficiency as compared to the respective QWs as a result of the three-dimensional carrier localization in the islands. In the QW samples, photoluminescence (PL) measurements point out a certain degree of carrier localization due to structural defects or thickness fluctuations, which is more pronounced in InGaN/GaN QWs due to alloy inhomogeneity. In the case of the QD stacks, carrier localization on potential fluctuations with a spatial extension smaller than the QD size is observed only for the InGaN QD-sample with the highest In content (peak emission around 2.76 eV). These results confirm the efficiency of the QD three-dimensional confinement in circumventing the potential fluctuations related to structural defects or alloy inhomogeneity. PL excitation measurements demonstrate efficient carrier transfer from the wetting layer to the QDs in the GaN/AlN system, even for low QD densities (~1010 cm-3). In the case of InGaN/GaN QDs, transport losses in the GaN barriers cannot be discarded, but an upper limit to these losses of 15% is deduced from PL measurements as a function of the excitation wavelength.

High quality InAlN single layers lattice-matched to GaN grown by molecular beam epitaxy

We report on properties of high quality ~60 nm thick InAlN layers nearly in-plane lattice-matched to GaN, grown on c-plane GaN-on-sapphire templates by plasma-assisted molecular beam epitaxy. Excellent crystalline quality and low surface roughness are confirmed by X-ray diffraction, transmission electron microscopy, and atomic force microscopy. High annular dark field observations reveal a periodic in-plane indium content variation (8 nm period), whereas optical measurements evidence certain residual absorption below the band-gap. The indium fluctuation is estimated to be +/- 1.2% around the nominal 17% indium content via plasmon energy oscillations assessed by electron energy loss spectroscopy with sub-nanometric spatial resolution.

Nanoindentation of Bridgman YBCO samples

In this study, the mechanical properties of YBa2Cu3O7−x, obtained by the Bridgman technique, were examined using a Berkovich tip indenter on the basal plane (0 0 1). Intrinsic hardness was measured by nanoindentation tests and corrected using the Nix and Gao model for this material. Furthermore, Vickers hardness tests were performed, in order to determine the possible size effect on these measurements. The results showed an underestimation of the hardness value when the tests were performed with large loads. Moreover, the elastic modulus of the Bridgman samples was 128 ± 5 GPa. Different residual imprints were visualised by atomic force microscopy and a focused ion beam, in order to observe superficial and internal fracturing. Mechanical properties presented a considerable reduction at the interface. This effect could be attributed to internal stress generated during the texturing process. In order to corroborate this hypothesis, an observation using transmission electron microscopy was performed.

Impact of N2 plasma power and duration on AlGaN/GaN HEMT

urface treatments have been recently shown to play an active role in electrical characteristics in AlGaN/GaN HEMTs, in particular during the passivation processing [1-4]. However, the responsible mechanisms are partially unknown and further studies are demanding. The effects of power and time N2 plasma pre-treatment prior to SiN deposition using PE-CVD (plasma enhanced chemical vapour deposition) on GaN and AlGaN/GaN HEMT have been investigated. The low power (60 W) plasma pre-treatment was found to improve the electronic characteristics in GaN based HEMT devices, independently of the time duration up to 20 min. In contrast, high power (150 and 210 W) plasma pretreatment showed detrimental effects in the electronic properties (Fig. 1), increasing the sheet resistance of the 2DEG, decreasing the 2DEG charge density in AlGaN/GaN HEMTs, transconductance reduction and decreasing the fT and fmax values up to 40% respect to the case using 60 W N2 plasma power. Although AFM (atomic force microscopy) results showed AlGaN and GaN surface roughness is not strongly affected by the N2-plasma, KFM (Kelvin force microscopy) surface analysis shows significant changes in the surface potential, trending to increase its values as the plasma power is higher. The whole results point at energetic ions inducing polarization-charge changes that affect dramatically to the 2-DEG charge density and the final characteristics of the HEMT devices. Therefore, we conclude that AlGaN surface is strongly sensitive to N2 plasma power conditions, which turn to be a key factor to achieve a good surface preparation prior to SiN passivation.

Impact of N2 plasma power discharge on AlGaN/GaN HEMT performance

The effects of power and time conditions of in situ N2 plasma treatment, prior to silicon nitride (SiN) passivation, were investigated on an AlGaN/GaN high-electron mobility transistor (HEMT). These studies reveal that N2 plasma power is a critical parameter to control the SiN/AlGaN interface quality, which directly affects the 2-D electron gas density. Significant enhancement in the HEMT characteristics was observed by using a low power N2 plasma pretreatment. In contrast, a marked gradual reduction in the maximum drain-source current density (IDS max) and maximum transconductance (gm max), as well as in fT and fmax, was observed as the N2 plasma power increases (up to 40% decrease for 210 W). Different mechanisms were proposed to be dominant as a function of the discharge power range. A good correlation was observed between the device electrical characteristics and the surface assessment by atomic force microscopy and Kelvin force microscopy techniques.

Nanocrack-induced leakage current in AlInN/AlN/GaN

Here we report on the study of nano-crack formation in Al1−xInxN/AlN/GaN heterostructures, on its association with composition fluctuation and on its local electrical properties. It is shown here that indium segregation at nano-cracks and threading dislocations originating from the non-pseudomorphic AlN interlayer could be the cause of the high reverse-bias gate leakage current of Ni/Au Schottky contacts on Al1−xInxN/AlN/GaN heterostructures and significantly affects the contact rectifying behavior. Segregation of indium around crack tips in Al1−xInxN acting as conductive paths was assessed with conductive atomic force microscopy.

Influence of PH3 exposure on silicon substrate morphology in the MOVPE growth of III-V on silicon multijunction solar cells

Dual-junction solar cells formed by a GaAsP or GaInP top cell and a silicon bottom cell seem to be attractive candidates to materialize the long sought-for integration of III-V materials on silicon for photovoltaic applications. One of the first issues to be considered in the development of this structure will be the strategy to create the silicon emitter of the bottom subcell. In this study, we explore the possibility of forming the silicon emitter by phosphorus diffusion (i.e. exposing the wafer to PH3 in a MOVPE reactor) and still obtain good surface morphologies to achieve a successful III-V heteroepitaxy as occurs in conventional III-V on germanium solar cell technology. Consequently, we explore the parameter space (PH3 partial pressure, time and temperature) that is needed to create optimized emitter designs and assess the impact of such treatments on surface morphology using atomic force microscopy. Although a strong degradation of surface morphology caused by prolonged exposure of silicon to PH3 is corroborated, it is also shown that subsequent anneals under H-2 can recover silicon surface morphology and minimize its RMS roughness and the presence of pits and spikes.

Desarrollo de un procedimiento para la observación y caracterización mecánica de células sobre sustratos opacos mediante microscopía de fuerzas atómicas : aplicación al estudio de linfocitos

Las células en los tejidos biológicos están continuamente sometidas a estímulos físicos tales como la presión hidrostática y esfuerzos de tracción, compresión o cortante, entre otros. La importancia de los estímulos mecánicos en el comportamiento de las células se ha reconocido recientemente al comprobarse cómo la naturaleza de estas fuerzas puede cambiar en patologías tales como las enfermedades vasculares o el cáncer. En respuesta a estos cambios, las células reaccionan modificando desde su forma o aspecto hasta su ciclo celular. Consecuentemente, el interés por el comportamiento mecánico de las células ha experimentado un auge creciente que ha requerido el desarrollo de varias técnicas de caracterización. En este contexto, se puede afirmar que una de las técnicas que ha irrumpido con más fuerza en esta nueva área, situada entre el mundo biológico y el físico, es la microscopía de fuerza atómica. En esta Tesis se ha abordado el estudio mediante microscopía de fuerza atómica de linfocitos de ratón que constituyen un linaje celular especialmente difícil de caracterizar mediante esta técnica por su tamaño y naturaleza no adherente. Los linfocitos, como actores fundamentales del sistema inmune, tienen gran importancia en la determinación de la respuesta que un organismo desencadena ante la presencia de un biomaterial. Bajo esta premisa, y como condición previa a la caracterización de los linfocitos, ha sido necesario el desarrollo de una metodología robusta y de amplia aplicabilidad que permita el estudio de células sobre biomateriales. Finalmente y con el objetivo de correlacionar el comportamiento mecánico de los linfocitos con alguna característica fisiológica relevante, se ha analizado la hipótesis de que el comportamiento mecánico pueda ser utilizado como marcador de la edad biológica. Consecuentemente se ha abordado el estudio del comportamiento mecánico de los linfocitos clasificados por grupos de edad, de manera que se han obtenido los primeros resultados que indican cómo puede manifestarse el proceso de inmunosenescencia -depresión del sistema inmune relacionada con el envejecimiento- en el comportamiento mecánico de las células del sistema inmune. Cells within tissues are continuously exposed to physical forces including hydrostatic pressure, shear stress, and compression and tension forces. The relevance of these mechanical stimuli has recently been recognised by different works in which significant changes were observed in these forces when they were measued in individuals affected by cardiovasvular diseases or cancer. Cells may alter their orientation, shape, internal constitution, contract, migrate, adhere, modify the synthesis and degradation of extracellular constituents, or even their life cycle in response to perturbations in their mechanical environment. As a consequence of this, the attention in cell mechanical behavior has undergone a significant thrust and novel techniques have been developed. In this context, atomic force microscopy has become a basic tool for the progress of this field. In this Thesis, the mechanical behavior of living murine T-lymphocytes was assessed by atomic force microscopy. Lymphocytes play a main role in the immune system of the individual and, consequently, in the immune response triggered by the presence of a biomaterial. The observation and characterization of the lymphocytes required the development of a robust experimental procedure that allowed overcoming the difficulties related to the analysis of this cell lineage, in particular their relatively large size and non-adherent character. These procedures could be easily transferred to other non-adherent cell lineages. Finally, to check the viability of developed method, we study the lymphocyte mechanical behavior as a function of the murine ageing. The obtained data represent a first step in the knowledge about how mechanical stimuli can affect the age-dependent decrease in immunological competence, i.e., the immunosenescence.

Measurement of the intrinsic damping constant in individual nanodisks of Y3Fe5O12 and Y3Fe5O12|Pt

We report on an experimental study on the spin-waves relaxation rate in two series of nanodisks of diameter ϕ=300 , 500, and 700 nm, patterned out of two systems: a 20 nm thick yttrium iron garnet (YIG) film grown by pulsed laser deposition either bare or covered by 13 nm of Pt. Using a magnetic resonance force microscope, we measure precisely the ferromagnetic resonance linewidth of each individual YIG and YIG|Pt nanodisks. We find that the linewidth in the nanostructure is sensibly smaller than the one measured in the extended film. Analysis of the frequency dependence of the spectral linewidth indicates that the improvement is principally due to the suppression of the inhomogeneous part of the broadening due to geometrical confinement, suggesting that only the homogeneous broadening contributes to the linewidth of the nanostructure. For the bare YIG nano-disks, the broadening is associated to a damping constant α=4 × 10−4 . A threefold increase of the linewidth is observed for the series with Pt cap layer, attributed to the spin pumping effect. The measured enhancement allows to extract the spin mixing conductance found to be G↑↓=1.55 × 1014 Ω−1 m−2 for our YIG(20nm)|Pt interface, thus opening large opportunities for the design of YIG based nanostructures with optimized magnetic losses.

CMOS integration of AlN based piezoelectric microcantilevers

El gran crecimiento de los sistemas MEMS (Micro Electro Mechanical Systems) así como su presencia en la mayoría de los dispositivos que usamos diariamente despertó nuestro interés. Paralelamente, la tecnología CMOS (Complementary Metal Oxide Semiconductor) es la tecnología más utilizada para la fabricación de circuitos integrados. Además de ventajas relacionadas con el funcionamiento electrónico del dispositivo final, la integración de sistemas MEMS en la tecnología CMOS reduce significantemente los costes de fabricación. Algunos de los dispositivos MEMS con mayor variedad de aplicaciones son los microflejes. Estos dispositivos pueden ser utilizados para la extracción de energía, en microscopios de fuerza atómica o en sensores, como por ejemplo, para biodetección. Los materiales piezoeléctricos más comúnmente utilizados en aplicaciones MEMS se sintetizan a altas temperaturas y por lo tanto no son compatibles con la tecnología CMOS. En nuestro caso hemos usado nitruro de alumino (AlN), que se deposita a temperatura ambiente y es compatible con la tecnología CMOS. Además, es biocompatible, y por tanto podría formar parte de un dispositivo que actúe como biosensor. A lo largo de esta tesis hemos prestado especial atención en desarrollar un proceso de fabricación rápido, reproducible y de bajo coste. Para ello, todos los pasos de fabricación han sido minuciosamente optimizados. Los parámetros de sputtering para depositar el AlN, las distintas técnicas y recetas de ataque, los materiales que actúan como electrodos o las capas sacrificiales para liberar los flejes son algunos de los factores clave estudiados en este trabajo. Una vez que la fabricación de los microflejes de AlN ha sido optimizada, fueron medidos para caracterizar sus propiedades piezoeléctricas y finalmente verificar positivamente su viabilidad como dispositivos piezoeléctricos. ABSTRACT The huge growth of MEMS (Micro Electro Mechanical Systems) as well as their presence in most of our daily used devices aroused our interest on them. At the same time, CMOS (Complementary Metal Oxide Semiconductor) technology is the most popular technology for integrated circuits. In addition to advantages related with the electronics operation of the final device, the integration of MEMS with CMOS technology reduces the manufacturing costs significantly. Some of the MEMS devices with a wider variety of applications are the microcantilevers. These devices can be used for energy harvesting, in an atomic force microscopes or as sensors, as for example, for biodetection. Most of the piezoelectric materials used for these MEMS applications are synthesized at high temperature and consequently are not compatible with CMOS technology. In our case we have used aluminum nitride (AlN), which is deposited at room temperature and hence fully compatible with CMOS technology. Otherwise, it is biocompatible and and can be used to compose a biosensing device. During this thesis work we have specially focused our attention in developing a high throughput, reproducible and low cost fabrication process. All the manufacturing process steps of have been thoroughly optimized in order to achieve this goal. Sputtering parameters to synthesize AlN, different techniques and etching recipes, electrode material and sacrificial layers are some of the key factors studied in this work to develop the manufacturing process. Once the AlN microcantilevers fabrication was optimized, they were measured to characterize their piezoelectric properties and to successfully check their viability as piezoelectric devices.

Topographical and mechanical characterization of living eukaryotic cells on opaque substrates: development of a general procedure and its application to the study of non-adherent lymphocytes

The mechanical behavior of living murine T-lymphocytes was assessed by atomic force microscopy (AFM). A robust experimental procedure was developed to overcome some features of lymphocytes, in particular their spherical shape and non-adherent character. The procedure included the immobilization of the lymphocytes on amine-functionalized substrates, the use of hydrodynamic effects on the deflection of the AFM cantilever to monitor the approaching, and the use of the jumping mode for obtaining the images. Indentation curves were analyzed according to Hertz's model for contact mechanics. The calculated values of the elastic modulus are consistent both when considering the results obtained from a single lymphocyte and when comparing the curves recorded from cells of different specimens

Mechanical and chemical unfolding of a single protein: A comparison

Is the mechanical unraveling of protein domains by atomic force microscopy (AFM) just a technological feat or a true measurement of their unfolding? By engineering a protein made of tandem repeats of identical Ig modules, we were able to get explicit AFM data on the unfolding rate of a single protein domain that can be accurately extrapolated to zero force. We compare this with chemical unfolding rates for untethered modules extrapolated to 0 M denaturant. The unfolding rates obtained by the two methods are the same. Furthermore, the transition state for unfolding appears at the same position on the folding pathway when assessed by either method. These results indicate that mechanical unfolding of a single protein by AFM does indeed reflect the same event that is observed in traditional unfolding experiments. The way is now open for the extensive use of AFM to measure folding reactions at the single-molecule level. Single-molecule AFM recordings have the added advantage that they define the reaction coordinate and expose rare unfolding events that cannot be observed in the absence of chemical denaturants.

Antigen binding forces of individually addressed single-chain Fv antibody molecules

Antibody single-chain Fv fragment (scFv) molecules that are specific for fluorescein have been engineered with a C-terminal cysteine for a directed immobilization on a flat gold surface. Individual scFv molecules can be identified by atomic force microscopy. For selected molecules the antigen binding forces are then determined by using a tip modified with covalently immobilized antigen. An scFv mutant of 12% lower free energy for ligand binding exhibits a statistically significant 20% lower binding force. This strategy of covalent immobilization and measuring well separated single molecules allows the characterization of ligand binding forces in molecular repertoires at the single molecule level and will provide a deeper insight into biorecognition processes.

Nuclear hourglass technique: An approach that detects electrically open nuclear pores in Xenopus laevis oocyte

Nuclear pore complexes (NPCs) mediate both active transport and passive diffusion across the nuclear envelope (NE). Determination of NE electrical conductance, however, has been confounded by the lack of an appropriate technical approach. The nuclear patch clamp technique is restricted to preparations with electrically closed NPCs, and microelectrode techniques fail to resolve the extremely low input resistance of large oocyte nuclei. To address the problem, we have developed an approach for measuring the NE electrical conductance of Xenopus laevis oocyte nuclei. The method uses a tapered glass tube, which narrows in its middle part to 2/3 of the diameter of the nucleus. The isolated nucleus is sucked into the narrow part of the capillary by gentle fluid movement, while the resulting change in electrical resistance is monitored. NE electrical conductance was unexpectedly large (7.9 ± 0.34 S/cm2). Evaluation of NPC density by atomic force microscopy showed that this conductance corresponded to 3.7 × 106 NPCs. In contrast to earlier conclusions drawn from nuclear patch clamp experiments, NPCs were in an electrically “open” state with a mean single NPC electrical conductance of 1.7 ± 0.07 nS. Enabling or blocking of active NPC transport (accomplished by the addition of cytosolic extracts or gp62-directed antibodies) revealed this large NPC conductance to be independent of the activation state of the transport machinery located in the center of NPCs. We conclude that peripheral channels, which are presumed to reside in the NPC subunits, establish a high ionic permeability that is virtually independent of the active protein transport mechanism.