Bending of jets in the QSO NRAO 530

We present radio images of NRAO 530 on scales ranging from pc to kpc. The observations include the EVN at 5 GHz, the VLBA at 1.6, 8.6 and 15 GHz, the MERLIN at 1.6 and 5 GHz, and the VLA at 5, 8.4, 15, 22, and 43 GHz. The VLBI images show a core-jet structure with an oscillating trajectory on a scale of about 30 mas north of the strongest compact component (core). Superluminal motions are detected in five of the jet components with apparent velocities in the range of 13.6 to 25.2c. A new component is detected at 15 GHz with the VLBA observations, which appears to be associated with the outburst in 2002. Significant polarized emission is detected around the core with the VLBA observations at 15 GHz. Rapid variations of the polarization intensity and angle are found between the epochs in 2002 and 2004. On the kpc-scale, a distant component (labelled as WL) located 11 aresec west (PA=-86 degrees) of the core is detected beyond the core-jet structure which extended to several hundreds of mas in the north-west direction (-50 degrees). A significant emission between the core-jet structure and the WL is revealed. A clump of diffuse emission (labelled EL, 12 arcsec long) at PA 70 degrees to the core, is also detected in the VLA observations, suggesting the presence of double lobes in the source. The core component shows a flat spectrum, while the distant components WL and EL have steep spectra. The steep spectra of the distant components and the detection of the arched emission suggest that the distant components are lobes or hot-spots powered by the core of NRAO 530. The morphologies from pc- to kpc-scales and the bending of jets are investigated. The observed radio morphology from pc to kcp appears to favor the model in which precession or wobbling of the nuclear disk drives the helical motion of the radio plasma and produces the S-shaped structure on kpc scale.

涌泉根灌湿润体特征值变化规律研究

在米脂山地微灌枣树示范基地进行原状土涌泉根灌入渗试验,研究了不同流量、不同灌水历时条件下涌泉根灌湿润体特征值的变化规律。结果表明:湿润体的水平扩散半径、向上入渗距离、向下入渗深度随流量的增大而增大,且均与入渗时间有显著的幂函数关系;在相同流量情况下,向上入渗最快,水平扩散次之,向下入渗最慢;湿润体体积受灌水量和流量的影响;在不同流量条件下,湿润体体积与灌水量间,湿润体水平扩散半径、垂直扩散距离与灌水量间均存在极显著的幂函数关系;针对五年生枣树根系分布特征,确定了枣树适宜灌水时间和灌水量。

黄土丘陵区小叶杨生长空间差异性及其土壤环境效应

采用每木测定的方法,对不同坡位小叶杨林及其林下植被生长情况进行了调查和计算。研究表明,坡下部小叶杨生长状态良好,其平均地径、胸径、枝下高和冠幅等参数都明显优于坡中部和上部,以沟谷地带的小叶杨的生长为基点,则坡下部、中部和上部的小叶杨的树高和胸径生长潜力分别为沟谷地带小叶杨的77.53%,34.88%,31.88%和75.59%,39.51%,33.36%,坡下部种植小叶杨更有利于其稳定生长;小叶杨(+沙棘)混交林,其林分的平均树高、地径、胸径及冠幅等生长参数都明显高于纯小叶杨林,混交小叶杨林比纯小叶杨林有更好的稳定性保水保土功能。通过对不同坡位小叶杨林地生长环境因子的分析表明,各因子对造成不同坡位小叶杨林空间差异的贡献程度和行为不尽相同,土壤含水量、有机质、全N和有效N含量的影响最为显著;土壤速效P和速效K在各土壤剖面的表现基本一致,且坡下>坡中>坡上;而pH与其它因子相比则表现出相反的作用和趋势。通过对营造方式小叶杨林地生长环境因子的分析表明,土壤含水量在0-120 cm土层的影响较为显著,但在120 cm土层以下表现完全相反;混交林地的沙棘对大大调节土壤全P、有效N和速效P含量,对小叶杨林生长环境贡献突出...

1ST PRINCIPLE CALCULATIONS OF QUASI-PARTICLE ENERGIES FOR BAND STRUCTURES OF SEMICONDUCTORS

We successfully applied the Green function theory in GW approximation to calculate the quasiparticle energies for semiconductors Si and GaAs. Ab initio pseudopotential method was adopted to generate basis wavefunctions and charge densities for calculating dielectric matrix elements and electron self-energies. To evaluate dynamical effects of screened interaction, GPP model was utilized to extend dieletric matrix elements from static results to finite frequencies. We give a full account of the theoretical background and the technical details for the first principle pseudopotential calculations of quasiparticle energies in semiconductors and insulators. Careful analyses are given for the effective and accurate evaluations of dielectric matrix elements and quasiparticle self-energies by using the symmetry properties of basis wavefunctions and eigenenergies. Good agreements between the calculated excitation energies and fundamental energy gaps and the experimental band structures were achieved.

Electronic structure of microporous titanosilicate ETS-10

The electronic structure of a microporous titanosilicate framework, ETS-10 is calculated by means of a first-principles self-consistent method. It is shown that without the inclusion of the alkali atoms whose positions in the framework are unknown, ETS-10 is an electron deficient system with 32 electrons per unit cell missing at the top of an otherwise semiconductor-like band structure. The calculated density of slates are resolved into partial components. It is shown that the states of the missing electrons primarily originate from the Ti-O bond. The local density of states of the Ti-3d orbitals in the ETS-10 framework is quite different from the perovskite BaTiO3. The possibilities of ETS-10 crystal being ferroelectric or having other interesting properties are discussed.

Electronic properties of zinc-blende GaN, AlN, and their alloys Ga1-xAlxN

The electronic properties of wide-energy gap zinc-blende structure GaN, A1N, and their alloys Ga(1-x)A1(x)N are investigated using the empirical pseudopotential method. Electron and hole effective mass parameters, hydrostatic and shear deformation potential constants of the valence band at Gamma and those of the conduction band at Gamma and X are obtained for GaN and AIN, respectively. The energies of Gamma, X, L conduction valleys of Ga(1-x)A1(x)N alloy versus Al fraction x are also calculated. The information will be useful for the design of lattice mismatched heterostructure optoelectronic devices based on these materials in the blue light range application. (C) 1995 American Institute of Physics.

基因表达数据分析中的特征基因提取

利用基因表达谱数据进行肿瘤亚型分类,对于癌症研究有着非常重要的意义。由于基因表达数据的维数很高,必须从大量基因中选取一些特征基因用于分类,才能取得好的效果。但以往方法所提取的特征基因,彼此之间存在较高的相关性。本文提出了一种基于高维向量分析的特征基因提取方法:首先利用基因与理想基因间相似度作为评价准则得到候选集,然后去除候选集中相关性强的冗余基因。用此方法选出的特征基因是与分类相关但彼此无关的,从而提高了特征基因子集的模式质量。

国内大功率半导体激光器研究及应用现状

近年来,国内外在大功率半导体激光器方面的研究均取得了很大的进展。其中,大功率半导体激光器列阵的研究和应用成为最大的亮点,如超高电光转换效率、高亮度和高可靠性等主要光电特性均实现了巨大的突破。针对国内大功率半导体激光器主要研究内容和关键技术进行了总结,在外延片结构中广泛采用应变量子阱结构、无铝有源区宽波导大光腔结构及非对称波导结构来提高端面光学灾变损伤光功率密度,还从腔面光学膜、器件封装、器件可靠性、光束整形与耦合以及器件应用等几个方面给予介绍。

MBE生长高光功率转换效率InGaAs/GaAs/AlGaAs应变量子阱激光器

该文从理论上分析了实现InGaAs/GaAs/AlGaAs应变量子阱激光器高光功率转换效率、高输出功率的有效途径，并优化了器件结构，可以同时获得低的腔面光功率密度和小的垂直于结平面远场发散角。利用分子束外延生长构成了高质量InGaAs/GaAs/AlGaAs应变量子阱激光器，其最高光功率转换效率为53%、最大输出功率为3.7W,垂直于结平面方向远场发散角为30°。

Improvement of CMOS SOS devices characteristics by a modified solid phase epitaxy

CMOS/SOS devices have lower carriers mobility and higher channel leakage current than bulk silicon CMOS devices. These mainly results from the defects of heteroepitaxial silicon film, especially from the defects near Si-Sapphire interface. This paper describes the experiment results of CMOS/SOS devices characteristics improved by a better epitaxial silicon quality which is obtained by a modified solid phase epitaxy.