Growth and spectral properties of Er:Gd2SiO5 crystal

Er3+ -doped Gd2SiO5 (Er:GSO) single crystal with dimensions of circle divide 35 x 40 mm(3) has been grown by the Czochralski method. The absorption and fluorescence spectra of the Er:GSO crystal were measured at room temperature. The spectral parameters were calculated based on Judd-Ofelt theory, and the intensity parameters Omega(2), Omega(4) and Omega 6 are obtained to be 6.168 x 10(-20), 1.878 x 10(-20), and 1.255 x 10(-20) cm(2), respectively. The emission cross-section has been calculated by Fuechtbauer-Ladenbury formula. (c) 2007 Elsevier B.V. All rights reserved.

Judd-Ofelt analysis of spectra and experimental evaluation of laser performance of Tm3+ doped Lu2SiO5 crystal

This paper reports that the TM3+:Lu2SiO5 (Tm:LSO) crystal is grown by Czochralski technique. The room-temperature absorption spectra of Tm:LSO crystal are measured on a b-cut sample with 4 at.% thulium. According to the obtained Judd-Ofelt intensity parameters Omega(2)=9.3155 x 10(-20) cm(2), Omega(4)=8.4103 x 10(-20) cm(2), Omega(6)=1.5908 x 10(-20) cm(2), the fluorescence lifetime is calculated to be 2.03 ms for F-3(4) -> H-3(6) transition, and the integrated emission cross section is 5.81 x 10(-18) cm(2). Room-temperature laser action near 2 mu m under diode pumping is experimentally evaluated in Tm:LSO. An optical-optical conversion efficiency of 9.1% and a slope efficiency of 16.2% are obtained with continuous-wave maximum output power of 0.67 W. The emission wavelengths of Tm:LSO laser are centred around 2.06 mu m with spectral bandwidth of similar to 13.6 nm.

Bulk crystal growth and efficient diode-pumped laser performance of Yb 3+:Sc2SiO5

A bulk crystal of Yb:Sc2SiO5 (Yb:SSO) with favorable thermal properties was successfully obtained by the Czochralski method. The energy level diagrams for Yb:SSO crystal were determined by optical spectroscopic analysis and semi-empirical crystal-field calculations using the simple overlap model. The full width at half maximum of the absorption band centering at 976 nm was calculated to be 24 nm with a peak absorption cross-section of 9.2x10(-21) cm(2). The largest ground-state splitting of Yb3+ ions is up to 1027 cm(-1) in a SSO crystal host. Efficient diode-pumped laser performance of Yb:SSO was primarily demonstrated with a slope efficiency of 45% and output power of 3.55 W.

Polarized spectral analysis of Ho3+ ions in biaxial YAlO3 crystal for 2 mu m lasers

An Ho3+-doped YAlO3 (Ho : YAP) single crystal has been grown by the Czochralski technique. The polarized absorption spectra, polarized fluorescence spectra and fluorescence decay curve of the crystal are measured at room temperature. The spectroscopic parameters are calculated based on Judd-Ofelt theory, and the effective phenomenological intensity parameters Omega(2,eff), Omega(4,eff) and Omega(6,eff) are obtained to be 2.89 x 10(-20), 2.92 x 10(-20) and 1.32 x 10(-20) cm(2), respectively. The room-temperature fluorescence lifetime of the Ho3+ 5I(7) -> I-5(8) transition is measured to be 8.1 ms. Values of the absorption and emission cross-sections with different polarizations are presented for the I-5(7) manifold, and the polarized gain cross-section curves are also provided and discussed.

Biologie de Ethmalosa fimbriata (Bowdich) en Côte d'Ivoire. 2 - Étude de la croissance en lagune par la méthode de Petersen

Ethmalosa growth curves (calculated by the least squares method) were determined from weekly samplings in Ebrié Lagoon. In order to obtain more accurate results than with a modal decomposition, the author used directly the modal values of the samples. One-year-old ethmalosa is about 15 cm long (fork length). For older fish, growth data seem to be disturbed by migrations: fish measuring >25 cm do not appear in the lagoon. Ethmalosa would spend the first year of its life in the lagoon, where it hatches and reproduces, and would migrate to the sea during its second year.

Heterogeneous catalytic properties of unprecedented m-O-[FeTCPP]2 dimers (H2TCPP = meso-tetra(4-carboxyphenyl)porphyrin): unusual superhyperfine EPR structure

Articulo científico Dalton Transactions

Morphometric measurements as an index for estimating yield of meat in shell fishes, 2. Mussel (Perna viridis) and clam (villorita cyprinoides)

Observations (76 nos) on height-length and whole weight-meat weight relations of mussels (Perna viridis), both wild and cultured were made. From the length of mussel the height can be worked out by the equations (logarithmic scale), 1. y = 0.360+0.988 x for wild; 2. y = 0.334+1.011 x for cultured, where x is the length (cm) and y is the height (cms). So also to any height the corresponding meat weight can be obtained by the regression equation. log w=-0.8178+1.9769 log H for wild variety (1) log w=-1.3049+2.8385 log H for culture-variety (2) where w is the meat weight (g) and H is the height (cm) of the mussel. Fourteen observations on size weight measurements of dams were made. The yield varied from 8.9 to 13%. The length-height relationship worked out for clams (Villorita sp) is y=0.485+1.005 x for length x and height y.

High-performance 2 mm gate width GaNHEMTs on 6H-SiC with output power of 22.4 W @ 8 GHz

Optimized AlGaN/AlN/GaN high electron mobility transistors (HEMTs) structures were grown on 2-in semi-insulating (SI) 6H-SiC substrate by metal-organic chemical vapor deposition (MOCVD). The 2-in. HEMT wafer exhibited a low average sheet resistance of 305.3 Omega/sq with a uniformity of 3.85%. The fabricated large periphery device with a dimension of 0.35 pm x 2 nun demonstrated high performance, with a maximum DC current density of 1360 mA/mm, a transconductance of 460 mS/mm, a breakdown voltage larger than 80 V, a current gain cut-off frequency of 24 GHz and a maximum oscillation frequency of 34 GHz. Under the condition of continuous-wave (CW) at 9 GHz, the device achieved 18.1 W output power with a power density of 9.05 W/mm and power-added-efficiency (PAE) of 36.4%. While the corresponding results of pulse condition at 8 GHz are 22.4 W output power with 11.2 W/mm power density and 45.3% PAE. These are the state-of-the-art power performance ever reported for this physical dimension of GaN HEMTs based on SiC substrate at 8 GHz. (c) 2008 Elsevier Ltd. All rights reserved.

High-speed 2 x 2 silicon-based electro-optic switch with nanosecond switch time

A 2 x 2 electro-optic switch is experimentally demonstrated using the optical structure of a Mach-Zehnder interferometer (MZI) based on a submicron rib waveguide and the electrical structure of a PIN diode on silicon-on-insulator (SOI). The switch behaviour is achieved through the plasma dispersion effect of silicon. The device has a modulation arm of I mm in length and cross-section of 400 nmx340 nm. The measurement results show that the switch has a V pi L pi figure of merit of 0.145 V-cm and the extinction ratios of two output ports and cross talk are 40 dB, 28 dB and -28 dB, respectively. A 3 dB modulation bandwidth of 90 MHz and a switch time of 6.8 ns for the rise edge and 2.7 ns for the fall edge are also demonstrated.

Effects of polarization field on formation of two-dimensional electron gas in (0001) and (11(2)over-bar0) plane AlGaN/GaN heterostructures

Photoluminescence (PL) and temperature-dependent Hall effect measurements were carried out in (0001) and (11 (2) over bar0) AlGaN/GaN heterostructures grown on sapphire substrates by metalorganic chemical vapor deposition. There are strong spontaneous and piezoelectric electric fields (SPF) along the growth orientation of the (0001) AlGaN/GaN heterostructures. At the same time there are no corresponding SPF along that of the (1120) AlGaN/GaN. A strong PL peak related to the recombination between two-dimensional electron gas (2DEG) and photoexcited holes was observed at 3.258 eV at room temperature in (0001) AlGaN/GaN heterointerfaces while no corresponding PL peak was observed in (11 (2) over bar0). The existence of a 2DEG was observed in (0001) AlGaN/GaN multi-layers with a mobility saturated at 6000 cm(2)/V s below 80 K, whereas a much lower mobility was measured in (11 (2) over bar0). These results indicated that the SPF was the main element to cause the high mobility and high sheet-electron-density 2DEG in AlGaN/GaN heterostructures. (C) 2004 Elsevier B.V. All rights reserved.

全同1，2－聚丁二烯的合成及用~(13)C-NMR方法研究1，2－聚丁二烯的序列结构

采用Cr／Al催化体系，成功地合成了全同1，2－聚丁二烯（PBD），并用DSC方法、X－射线衍射、红外光谱及~(13)C－NMR的方法进行结构与物性测定，得如下结果：全同1，2－PBD的熔点为124.3℃；三角晶系中，分子链成了螺旋，晶胞参数为a＝17.3A，c＝ 6.5A；在红外光谱中，其特征谱带出现在694.4 cm~(-1)处；在~(13)C－NMR谱中仅出现四条谱峰，其化学位移分别为142.51、111.56、39.26、37.43 ppm。全同1，2－PBD的~(13)C－NMR谱提供的实验数据表明，在~(13)C－NMR谱中1，2－PBD－CH二碳十个五元组谱峰的归属是有别于Elgert、Kumar已有的归属。它属于一种新的归属，与半经验方法所推演的结果相符。它恰巧同聚丙烯侧甲基五元组谱峰的归属一致。采用半经验方法研究了1，2－PBD的~(13)C－NMR增中CH二碳五元组、CH_2－碳四元组及六元组共振谱峰，同时讨论了模型链的链长、温度以及立构序列的排列对各立构序列键概率的影响，求得了相应的r值。同时采用经验方法对1，2－PBD的~(13)C－NMR谱中CH_2=碳、CH－碳五元组及CH_2－碳四元组谱峰做了归属。两种方法对CH_2－碳谱峰的归属得到了一致的结果。

PHOTOLUMINESCENCE STUDIES ON VERY HIGH-DENSITY 2-DIMENSIONAL ELECTRON GASES IN PSEUDOMORPHIC MODULATION-DOPED QUANTUM-WELLS

We present photoluminescence studies on highly dense two-dimensional electron gases in selectively Si delta-doped GaAs/In0.18Ga0.82As/Al0.25Ga0.75As quantum wells (N(s) = 4.24 x 10(12) cm-2). Five well-resolved photoluminescence lines centered at 1.4194, 1.4506, 1.4609, 1.4695 and 1.4808 eV were observed, which are attributed to the subband excition emission. The subband separations clearly exhibit the feature of a typical quantum well with triangle and square potential. These very intensive and sharp luminescence peaks with linewidths of 2.2 to 3.5 meV indicate the high quality of the structures. Their dependence on the excitation intensity and temperatures are also discussed.

Energy level analyses of even-parity J=1 and 2 Rydberg states of Sn I by multichannel quantum defect theory

This paper analyzes the energy levels along the even-parity J=1 and 2 Rydberg series of Sn I by multichannel quantum defect theory. A good agreement between theoretical and experimental energy levels was achieved. Below 59198 cm~(-1), a total of 85 and 23 new energy levels, respectively, in the J=1 and J=2 series, which cannot be measured previously by experiments, are predicted in this work. Based on the calculated admixture coefficients of each channel, interchannel interactions were discussed in detail. The results are helpful to understand the characteristics of configuration interaction among even-parity levels in Sn I.