925 resultados para aluminum doping


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The effects of temperature on the fast fracture behavior of aluminum nitride with 5 wt% Y(2)O(3) ceramic were investigated. Four-point flexural strength and fracture toughness were measured in air at several temperatures (30-1,300 A degrees C). The flexural strength gradually decreased with the increase of temperature up to 1,000 A degrees C due to the change in the fracture mode from transgranular to intergranular, and then became almost constant up to 1,300 A degrees C. Two main flaw types as fracture origin were identified: small surface flaw and large pores. The volume fraction of the large pores was only 0.01%; however, they limited the strength on about 50% of the specimens. The fracture toughness decreased slightly up to 800 A degrees C controlled by the elastic modulus change, and then decreased significantly at 1,000 A degrees C due to the decrease in the grain-boundary toughness. Above 1,000 A degrees C, the fracture toughness increased significantly, and at 1,300 A degrees C, its value was close to that measured at room temperature.

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Alumina ceramics with high in-line transmittance at 0.5-1.0 mm-thickness were prepared with different doping additives by sintering at 1850 degrees C in vacuum for 1-8 h. Depending on the additive contents and sintering variables bi-dimensionally large surface grains, caused by surface evaporation of MgO, had grown parallel to the surface with similar to 100 mu m thickness and lateral sizes up to the millimeter range. The abnormal grain-growth process also resulted in the formation of pores entrapped inside the large surface grains within a narrow zone at 10-20 mu m distance from the surface. The fraction of these pores is thickness-invariant. Scattering factors associated to the pores entrapped inside the bi-dimensionally large surface grains, second-phase particles, grain-boundaries, and microstructural surface defects are derived from the results of in-line transmission (at 600 nm) and are used together with microstructural characteristics to explain the light transmittance in these materials. (C) 2008 Elsevier Ltd. All rights reserved.

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A processing route has been developed for recovering the desired lambda fiber in iron-silicon electrical steel needed for superior magnetic properties in electric motor application. The lambda fiber texture is available in directionally solidified iron-silicon steel with the < 001 > columnar grains but was lost after heavy rolling and recrystallization required for motor laminations. Two steps of light rolling each followed by recrystallization were found to largely restore the desired fiber texture. This strengthening of the < 001 > fiber texture had been predicted on the basis of the strain-induced boundary migration (SIBM) mechanism during recrystallization of lightly rolled steel from existing grains of near the ideal orientation, due to postulated low stored energies. Taylor and finite element models supported the idea of the low stored energy of the lambda fiber grains. The models also showed that the lambda fiber grains, though unstable during rolling, only rotated away from their initial orientations quite slowly.

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In this paper, the performance of bis-1, 2-(triethoxysilyl) ethane (BTSE) as a pre-treatment to protect the AA 2024-T3 against corrosion has been investigated by electrochemical impedance spectroscopy (EIS), potentiodynamic polarization curves, and the scanning vibrating electrode technique (SVET). The microstructural and morphological characterizations were carried out via scanning electron microscopy and atomic force microscopy and the chemical composition evaluated using contact angle measurements and X-ray photoelectron spectroscopy (XPS). The electrochemical results showed that the additives improved the anticorrosion properties of the coating. The chemical characterization indicated that additives contribute to an increased degree of surface coverage, as well as to a more complete reticulation. The SVET results evidenced the self-healing abilities of Ce ions. (C) 2009 Elsevier Ltd. All rights reserved.

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Aluminium alloy (AA) 2024-T3 is an important engineering material due to its widespread use in the aerospace industry. However, it is very prone to localized corrosion attack in chloride containing media, which has been mainly associated to the presence of coarse intermetallics (IMs) in its microstructure. In this work the corrosion behaviour of AA 2024-T3 in low concentrated chloride media was investigated using microscopy and electrochemical methods. TEM/EDS observations on non-corroded samples evidenced the heterogeneous composition within the IMs. In addition, SEM observations showed that intermetallics with the same nominal composition present different reactivity, and that both types of coarse IMs normally found in the alloy microstructure are prone to corrosion. Moreover, EDS analyses showed important compositional changes in corroded IMs, evidencing a selective dissolution of their more active constituents, and the onset of an intense oxygen peak, irrespective to the IM nature, indicating the formation of corrosion products. On the other hand, the results of the electrochemical investigations, in accordance with the SEM/EDS observations, evidenced that IMs corrosion dominates the electrochemical response of the alloy during the first hours of immersion in the test electrolyte. (c) 2008 Elsevier Ltd. All rights reserved.

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In the last few years great efforts have been made in order to find and to develop environmentally friendly substitutes for Cr6+ pre-treatments applied on aluminium alloys used in the aircraft industry. Among the potential substitutes, silane layers have attracted considerable interest from researchers and from the industry. The present work investigates the anti-corrosion behaviour of (bis-1, 2-(triethoxysilyl) ethane (BTSE)) silane layers modified with Ce ions and/or silica nanoparticles applied on Al alloy 2024-T3 substrates. The corrosion behaviour was investigated in 0.1 M NaCl solution via d.c. polarization and electrochemical impedance spectroscopy (EIS). Contact angle measurements and XPS were used to assess information on the chemistry of the silane pre-treated surfaces. The results have shown that the introduction of additives improves the corrosion protection properties of the silane layer. (c) 2008 Elsevier Ltd. All rights reserved.

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FinFETs are recognized as promising candidates for the CMOS nanometer era. In this paper the most recent results for cryogenic operation of FinFETs will be demonstrated with special emphasis on analog applications. Threshold voltage, subthreshold slope and carrier mobility will be studied. Also some important figures of merit for analog circuit operation as for readout electronics, such as transconductance, output conductance and intrinsic voltage gain will be covered. It is demonstrated that the threshold voltage of undoped narrow FinFETs is less temperature-dependent than for a planar single-gate device with similar doping concentration. The temperature reduction improves the transconductance over drain current ratio in any operational region. On the other hand, the output conductance is degraded when the temperature is reduced. The combination of these effects shows that the intrinsic gain of a L = 90 nm FinFET is degraded by 2 dB when the temperature reduces from 300 K to 100 K. (C) 2009 Elsevier Ltd. All rights reserved.

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The multiple-gate field-effect transistor (MuGFET) is a device with a gate folded on different sides of the channel region. They are one of the most promising technological solutions to create high-performance ultra-scaled SOI CMOS. In this work, the behavior of the threshold voltage in double-gate, triple-gate and quadruple-gate SOI transistors with different channel doping concentrations is studied through three-dimensional numerical simulation. The results indicated that for double-gate transistors, one or two threshold voltages can be observed, depending on the channel doping concentration. However, in triple-gate and quadruple-gate it is possible to observe up to four threshold voltages due to the corner effect and the different doping concentration between the top and bottom of the Fin. (C) 2008 Elsevier Ltd. All rights reserved.

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This work proposes a refined technique for the extraction of the generation lifetime in single- and double-gate partially depleted SOI nMOSFETs. The model presented in this paper, based on the drain current switch-off transients, takes into account the influence of the laterally non-uniform channel doping, caused by the presence of the halo implanted region, and the amount of charge controlled by the drain and source junctions on the floating body effect when the channel length is reduced. The obtained results for single- gate (SG) devices are compared with two-dimensional numerical simulations and experimental data, extracted for devices fabricated in a 0.1 mu m SOI CMOS technology, showing excellent agreement. The improved model to determine the generation lifetime in double-gate (DG) devices beyond the considerations previously presented also consider the influence of the silicon layer thickness on the drain current transient. The extracted data through the improved model for DG devices were compared with measurements and two-dimensional numerical simulations of the SG devices also presenting a good adjustment with the channel length reduction and the same tendency with the silicon layer thickness variation.

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In this work a new method for crosslinking ultra-thin films with potential applications in sensor systems is proposed. The films were produced by layer-by-layer (LbL) assembly using a conducting polymer, poly(o-ethoxyaniline) (POEA), alternated with a thermosetting resin, novolac-type phenolformaldehyde (PF), crosslinked by a simple thermal treatment. The PF resin served as both alternating and crosslinking agents. The films were characterized by Fourier transform infrared (FTIR) and ultraviolet-visible (UV-Vis) spectroscopy, thermogravimetry (TG), desorption, doping/dedoping cycling and electrical measurements. The results showed that film architecture and crosslinking degree can be controlled by the conditions used for film deposition (number of bilayers, polymer concentration, pH, and deposition time), and crosslinking time. Moreover, this approach offers several advantages such as fast curing time and low cost, indicating that these films can be used to produce sensors with improved stability.

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This letter presents the properties of nMOS junctionless nanowire transistors (JNTs) under cryogenic operation. Experimental results of drain current, subthreshold slope, maximum transconductance at low electric field, and threshold voltage, as well as its variation with temperature, are presented. Unlike in classical devices, the drain current of JNTs decreases when temperature is lowered, although the maximum transconductance increases when the temperature is lowered down to 125 K. An analytical model for the threshold voltage is proposed to explain the influence of nanowire width and doping concentration on its variation with temperature. It is shown that the wider the nanowire or the lower the doping concentration, the higher the threshold voltage variation with temperature.

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A deterministic mathematical model for steady-state unidirectional solidification is proposed to predict the columnar-to-equiaxed transition. In the model, which is an extension to the classic model proposed by Hunt [Hunt JD. Mater Sci Eng 1984;65:75], equiaxed grains nucleate according to either a normal or a log-normal distribution of nucleation undercoolings. Growth maps are constructed, indicating either columnar or equiaxed solidification as a function of the velocity of isotherms and temperature gradient. The fields A columnar and equiaxed growth change significantly with the spread of the nucleation undercooling distribution. Increasing the spread Favors columnar solidification if the dimensionless velocity of the isotherms is larger than 1. For a velocity less than 1, however, equiaxed solidification is initially favored, but columnar solidification is enhanced for a larger increase in the spread. This behavior was confirmed by a stochastic model, which showed that an increase in the distribution spread Could change the grain structure from completely columnar to 50% columnar grains. (c) 2008 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

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Unsaturated hydraulic conductivity of an Oxisol, using a neutron probe. The objective of this study was to determine the unsaturated hydraulic conductivity, using a neutron probe, of a clay sandy Oxisol. The Study was carried out in the city of Piracicaba, kite of Sao Paulo, Brazil (22 degrees 42` 43.3 `` S, 47 degrees`37` 10.4 `` W, 546 m). The dimensions of the experimental plot were 45 In x 15 m, in which 40 aluminum tubes were installed in order to access a neutron probe to measure the soil water content at the depths of 0.2, 0.4, 0.6, 0.8 and 1.0 m and, then, calculate the soil water storage of the 0 - 1.0 m soil layer. The distribution of these tubes was made in grids of four columns by ten rows in spacing of 5 x 5 m. The K(theta) functions were determined in the 40 points from regression analyses of theta as function Int and h(z) as a function of Int, being K the hydraulic conductivity, theta the volumetric soil water content, h(z) the soil water storage in the 0 - Z m layer, and t the soil water redistribution time. The neutron probe proved to be an efficient equipment in determining soil water contents, in the instantaneous profile method for determination of the K(theta) function in homogeneous soil.

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Fluoride (F) is an air pollutant that causes phytotoxicity. Besides the importance of this, losses of agricultural crops in the vicinity of F polluting industries in Brazil have been recently reported. Injuries caused to plant leaf cell structures by excess F are not well characterized. However, this may contribute to understanding the ways in which plant physiological and biochemical processes are altered. A study evaluated the effects of the atmospheric F on leaf characteristics and growth of young trees of sweet orange and coffee exposed to low (0.04 mol L(-1)) or high (0.16 mol L(-1)) doses of HF nebulized in closed chamber for 28 days plus a control treatment not exposed. Gladiolus and ryegrass were used as bioindicators in the experiment to monitor F exposure levels. Fluoride concentration and dry mass of leaves were evaluated. Leaf anatomy was observed under light and electron microscopy. High F concentrations (similar to 180 mg kg(-1)) were found in leaves of plants exposed at the highest dose of HF. Visual symptoms of F toxicity in leaves of citrus and coffee were observed. Analyses of plant tissue provided evidence that F caused degeneration of cell wall and cytoplasm and disorganization of bundle sheath, which were more evident in Gladiolus and coffee. Minor changes were observed for sweet orange and ryegrass. Increase on individual stomatal area was also marked for the Gladiolus and coffee, and which were characterized by occurrence of opened ostioles. The increased F absorption by leaves and changes at the structural and ultrastructural level of leaf tissues correlated with reduced plant growth.

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This study investigated the ionic speciation of reclaimed urban wastewater (RWW), and the impact of increasing RWW irrigation rates on soil properties and plant nutrition under field conditions. Most RWW elements (>66%) are readily available as NH(4)(+), Ca(2+), Mg(2+), K(+), SO(4)(2-), Cl(-), H(3)BO(3), Mn(2+) and Zn(2+), but in imbalanced proportion for plant nutrition. Lead, Cd, Cr and Al in RWW are mostly bounded with DOM or OH. Irrigation with RWW decreased soil acidity, which is beneficial to the acidic tropical soil. Although RWW irrigation builds exchangeable Na(+) up, the excessive Na(+) was leached out of the soil profile after a rainy summer season (>400 mm). Benefits of the disposal of RWW to the soil under tropical conditions were discussed, however, the over irrigation with RWW (>100% of crop evapotranspiration) led to a nutritional imbalance, accumulating S and leading to a plant deficiency of P and K. (C) 2011 Elsevier B.V. All rights reserved.