Cryogenic Operation of Junctionless Nanowire Transistors
| Contribuinte(s) |
UNIVERSIDADE DE SÃO PAULO |
|---|---|
| Data(s) |
18/10/2012
18/10/2012
2011
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| Resumo |
This letter presents the properties of nMOS junctionless nanowire transistors (JNTs) under cryogenic operation. Experimental results of drain current, subthreshold slope, maximum transconductance at low electric field, and threshold voltage, as well as its variation with temperature, are presented. Unlike in classical devices, the drain current of JNTs decreases when temperature is lowered, although the maximum transconductance increases when the temperature is lowered down to 125 K. An analytical model for the threshold voltage is proposed to explain the influence of nanowire width and doping concentration on its variation with temperature. It is shown that the wider the nanowire or the lower the doping concentration, the higher the threshold voltage variation with temperature. CAPES FAPESP CNPq SFI[05/IN/I888] EC[216171] EC[216373] |
| Identificador |
IEEE ELECTRON DEVICE LETTERS, v.32, n.10, p.1322-1324, 2011 0741-3106 http://producao.usp.br/handle/BDPI/18738 10.1109/LED.2011.2161748 |
| Idioma(s) |
eng |
| Publicador |
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC |
| Relação |
Ieee Electron Device Letters |
| Direitos |
restrictedAccess Copyright IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC |
| Palavras-Chave | #Junctionless transistor #low temperature #nanowire transistor #silicon-on-insulator (SOI) #threshold voltage model #Engineering, Electrical & Electronic |
| Tipo |
article original article publishedVersion |
