A New Criterion Number for the Boundary Conditions at the Solid/Liquid Interface in Nanoscale

A simple, but important three-atom model was proposed at the solid/liquid interface, leading to a new criterion number, lambda, governing the boundary conditions (BCs) in nanoscale. The solid wall is considered as the face-centered-cubic (fcc) structure. The fluid is the liquid argon with the well-known LJ potential. Based on the concept, the two micro-systems have the same BCs if they have The same criterion number. The degree of the locking BCs is enhanced when lambda equals to 0.757. Such critical criterion number results in the substantial epitaxial ordering and one, two, or even three liquid layers are locked by the solid wall, depending on the coupling energy scale ratio of the solid and liquid atoms. With deviation from the critical criterion number, the flow approaches the slip BCs and there are little ordering structures within the liquid. Always at the same criterion number, the degree of the slip is decreased or the locking is enhanced with increasing the coupling energy scale ratio of the solid and liquid atoms. The above analysis is well confirmed by the molecular dynamics (MD) simulation. The slip length is well correlated in terms of the new criterion number. The future work is suggested to extend the present theory for other microstructures of the solid wall atoms and quasi-LJ potentials.

Experimental study on K alpha X-ray emission from intense femtosecond laser-solid interactions

The characteristics of K alpha X-ray sources generated by p-polarized femtosecond laser-solid interactions are experimentally studied in the relativistic regime. By use of knife-edge image technique and a single-photon-counting X-ray CCD camera, we obtaine the source size, the spectrum and the conversion efficiency of the Ka X-ray sources. The experimental results show that the conversion efficiency of Ka photons reaches an optimum value of 7.08 x 10(-6)/sr at the laser intensity of 1.6 x 10(18) W/cm(2), which is different from the Reich's simulation results (Reich et al., 2000 Phys. Rev. Lett. 84 4846). We find that about 10% of laser energy is converted into the forward hot electrons at the laser intensity of 1.6 x 10(18) W/cm(2).

Solid-core tellurite glass fiber for infrared and nonlinear applications

By optimizing glass composition and using a multistage dehydration process, a ternary 80TeO(2)-10ZnO-10Na(2)O glass is obtained that shows excellent transparency in the wavelength range from 0.38 mu m up to 6.10 mu m. Based on this optimized composition, we report on the fabrication of a single-mode solid-core tellurite glass fiber with large mode area of 103 mu m(2) and low loss of 0.24 similar to 0.7 dB/m at 1550 nm. By using the continuous-wave self-phase modulation method, the non-resonant nonlinear refractive index n(2) and the effective nonlinear parameter gamma of this made tellurite glass fiber were estimated to be 3.8x10(-1)9 m(2)/W and 10.6 W-1.m(-1) at 1550 nm, respectively. (C) 2009 Optical Society of America

Single-Mode Solid-Core Tellurite Glass Fiber with Large Mode Area and Low Loss for Infrared Applications

低损耗实芯碲酸盐光纤的非线性研究

Quakes in solid quark stars

A starquake mechanism for pulsar glitches is developed in the solid quark star model. It is found that the general glitch natures (i.e., the glitch amplitudes and the time intervals) could be reproduced if solid quark matter, with high baryon density but low temperature, has properties of shear modulus mu(c) = 10(30-34) erg/cm(3) and critical stress sigma(c) = 10(18similar to24) erg/cm(3). The post-glitch behavior may represent a kind of damped oscillations. (C) 2004 Elsevier B.V. All rights reserved.

固体氧化物电解质的合成及电学性质的研究

世界能源短缺和环境污染问题日趋严重，因此需要发展能源转换效率高、对环境污染低并便于应用的绿色能源技术。固态氧化物燃料电池（SOFC，Solid Oxide Fuel Cell）因其效率高、对环境友好等优点被认为是二十一世纪最有前景的能源技术。SOFC的关键是固体电解质的研究。目前广泛使用的固体电解质8YSZ（8mol%Y2O3稳定化的ZrO2）仅在1000oC以上有高的电导率。所以，探索新的、在中温区具有高离子电导率的电解质材料具有重要的意义。另外，也可以采用新的方法改善固体氧化物电解质的导电性，比如掺杂、将材料纳米化等。 在本论文中，通过共沉淀法合成了La2Mo2O9化合物，并与溶胶凝胶法合成的样品进行比较，在同样的烧结条件下，共沉淀法合成的La2Mo2O9化合物具有更高的致密度，而且由于很少引入杂质，电导率得到明显提高，在800oC时达到0.15 S.cm-1。利用同样的方法通过对La2Mo2O9进行微量磷的掺杂，降低了材料在高温时的相转变温度，基本实现了低温电导率的提高。另外，我们还对La2Mo2O9化合物进行了高压烧结研究。实验表明，La2Mo2O9纳米粉末经过700oC高压烧结后得到了致密样品，样品保持了纳米尺度，相对密度达到99％。样品由原先单斜相的La2Mo2O9变为镧钼化合物的混合物，当其在常压下800oC退火后样品又回复到单一的La2Mo2O9相，此时样品粒径大约为50nm，通过这种方法，纳米La2Mo2O9陶瓷被制得。 通过在不同温度高压烧结的方法得到了致密的8YSZ材料。样品的相结构对电导率有很大的影响，在1450oC高压烧结10min得到了立方相与少量四方相的样品，由于具有很高的致密度，得到了相对高的低温电导率。而在1000oC高压烧结10min后的样品，其相结构转变为四方相和单斜相，电导率也相应降低。高压烧结后的样品在1650oC常压退火后，样品又回复到立方相，其电导率又相应提高。 磷灰石结构化合物由于烧结温度很高，也可以通过高压烧结的方法在低温下得到致密烧结体。本论文中，采用高压烧结的方法得到了致密的纳米La9.33Si6O26块体材料，并与常压烧结的样品进行比较，其电导率得到了提高。但是和文献报道值比较，其电导率还是相对较低。这主要是由于样品中含有少量La2SiO5杂相。提高样品的纯度将更有利于电导率的提高。 作为固体电解质的氧化铋基材料极大地吸引了人们的兴趣。本文通过溶胶凝胶法合成了Bi2Ga4O9化合物，首次研究了它的电学性质和化学稳定性。电导率随氧分压的减小而减小，表明化合物中p型电子导电的存在。在500oC时，化合物的离子迁移数小于0.50，化合物是混合导体。

PHYSICAL VAPOR TRANSPORT AND CRYSTAL-GROWTH OF GESEXTE1-X SOLID-SOLUTIONS

Physical vapor transport studies of GeSe(x)Te1 - x (x = 0.1, 0.2, 0.3, and 0.4) solid solutions demonstrated, that individual, large single crystals of these materials can be grown in closed ampoules. A compositional analysis of the grown crystals revealed, that the mass transport (crystal growth) process under steady-state conditions is pseudo-congruent and controlled by diffusion processes in the source material. From these experiments, the degree of non-stoichiometry (Ge-vacancy concentrations) of GeSe(x)Te1 - x single crystals could be estimated. The effects of the cubic to rhombohedral phase transformation during cooling on the microstructure and morphology of the grown mixed crystals are observed. This work provides the basis for subsequent defect studies and electrical measurements on these crystals.

Ge composition saturation behavior during low-temperature Si1-xGex growth by disilane and solid Ge molecular beam epitaxy

Ge composition dependence on the Ge cell temperature has been studied during the growth of Si1-xGex by disilane and solid Ge molecular beam epitaxy at a substrate temperature of 500 degrees C. It is found that the composition x increases and then saturates when the Ge cell temperature increases, which is different from the composition-dependent behavior in growth at high temperature as well as in growth by molecular beam epitaxy using disilane and germane. The enhanced hydrogen desorption from a Ge site alone cannot account for this abnormal composition-variation behavior. We attribute this behavior to the increase of rate constant of H desorption on a Si site when the Ge cell temperature increases.

COMPARISON OF PROPERTIES OF SOLID-PHASE EPITAXIAL SILICON-ON-SAPPHIRE FILMS RECRYSTALLIZED BY RAPID THERMAL ANNEALING AND FURNACE ANNEALING

Chemically vapour deposited silicon on sapphire (SOS) films 0.25 mu m thick were implanted with Si-28(+) and recrystallized in solid phase by furnace annealing (FA) and IR rapid thermal annealing (RTA) in our laboratory. An improvement in crystalline quality can be obtained using both annealing procedures. After FA, it is hard to retain the intrinsic high resistivity value(10(4)-10(5) Ohm cm) observed in as-grown SOS films, so the improvement process cannot be put to practical use effectively. However, it is demonstrated that by properly adjusting the implantation and RTA conditions, significant improvements in both film quality and film autodoping can be accomplished. This work describes a modified double solid phase epitaxy process in which the intrinsic high resistivities of the as grown SOS films are retained. The mechanism of suppression of Al autodoping is discussed.

GaInNAs/GaAs quantum well lasers grown by solid-source molecular beam epitaxy

The growth of GaInNAs/GaAs quantum wells (QW) was investigated by solid-source molecular beam epitaxy. N was introduced by a dc-active plasma source. The effect of growth conditions such as on the N incorporation and photoluminescence (PL) intensity of the QWs has been studied. The PL peak intensity decreased and the PL fun width at half maximum increased with increasing N concentrations. The highest N concentration of 2.6% in a GaInNAs/GaAs QW was obtained, and corresponding to a PL peak wavelength of 1.57 mum at 10K. Rapid thermal annealing at 850degreesC significantly improved the crystal quality of the QWs. An optimum annealing time of 5s at 850degreesC was obtained. A GaInNAs/GaAs SQW laser with the emitting wavelength of 1.2 mum and a high characteristic temperature of 115 K was achieved at room temperature.

Improvement of CMOS SOS devices characteristics by a modified solid phase epitaxy

CMOS/SOS devices have lower carriers mobility and higher channel leakage current than bulk silicon CMOS devices. These mainly results from the defects of heteroepitaxial silicon film, especially from the defects near Si-Sapphire interface. This paper describes the experiment results of CMOS/SOS devices characteristics improved by a better epitaxial silicon quality which is obtained by a modified solid phase epitaxy.