Isolation and Characterization of a Methomyl-Degrading Paracoccus sp mdw-1

Methomyl, an extremely toxic pesticide, is widely used in agriculture. A strain named mdw-1 capable of degrading methomyl rapidly was successfully isolated from activated sludge in this study. It could utilize methomyl as the sole carbon or nitrogen source. The optimal temperature and medium pH for its growth and methomyl biodegradation were 30 degrees C and 7.0, respectively. It was identified as a Paracoccus sp. according to its morphological features, physiological and biochemical characteristics, and phylogenetic analysis based on the sequence of 16S rDNA. Gas chromatography-mass spectrometry (GC-MS) analysis showed that methomyl could be completely transformed to S-methyl-N-hydroxythioacetamidate in 10 h of incubation with the isolate mdw-1.

ELECTRON-STATES OF A STACKING-FAULT RIBBON IN SILICON

The electronic structure of a bounded intrinsic stacking fault in silicon is calculated. The method used is an LCAO-scheme (Linear Combinations of Atomic Orbitals) taking ten atomic orbitals of s-, p-, and d-type into account. The levels in the band gap are extracted using Lanczos' algorithm and a continued fraction representation of the local density of states. We find occupied states located up to 0.3 eV above the valence band maximum (E(v)). This significantly differs from the result obtained for the ideal infinite fault for which the interface state is located at E(v)+ 0.1 eV.

Effect of temperature on implant isolation characteristics of AlGaAs/GaAs multilayer heterojunction structure

Thermally stable high-resistivity regions have been formed using hydrogen ion implantation at three energies (50, 100, and 180 keV) with three corresponding doses (6 X 10(14) 1.2 X 10(15), and 3 X 10(15) cm(-2)), oxygen implantation at 280keV with 2 X 10(14) cm(-2) as well as subsequent annealing at about 600 degrees C for 10-20s, in AlGaAs/GaAs multiple epitaxial heterojunction structure. After anncaling at 600 degrees C, the sheet resistivity increases by six orders more of magnitude from the as-grown values. This creation of high resistivity is different from that of the conventional damage induced isolation by H or O single implantation which becomes ineffective when anneal is carried out at 400-600 degrees C and the mechanism there of is discussed.