Electrical Characteristics of n-ZnO/p-Si Heterojunction Diodes Grown by Pulsed Laser Deposition at Different Oxygen Pressures

Heterojunction diodes of n-type ZnO/p-type silicon (100) were fabricated by 12 pulsed laser deposition of ZnO films on p-Si substrates in oxygen ambient at 13 different pressures. These heterojunctions were found to be rectifying with a 14 maximum forward-to-reverse current ratio of about 1,000 in the applied 15 voltage range of -5 V to +5 V. The turn-on voltage of the heterojunctions was 16 found to depend on the ambient oxygen pressure during the growth of the ZnO 17 film. The current density–voltage characteristics and the variation of the 18 series resistance of the n-ZnO/p-Si heterojunctions were found to be in line 19 with the Anderson model and Burstein-Moss (BM) shift.

Photoacoustic investigation of intrinsic and extrinsic Si

An open-cell configuration of the photoacoustic (PA) technique is employed to determine the thermal and transport properties of intrinsic Si and Si doped with B (p-type) and P (n-type). The experimentally obtained phase of the PA signal under heat transmission configuration is fitted to that of theoretical model by taking thermal and transport properties, namely, thermal diffusivity, diffusion coefficient, and surface recombination velocity, as adjustable parameters. It is seen from the analysis that doping and also the nature of dopant have a strong influence on the thermal and transport properties of semiconductors. The results are interpreted in terms of the carrier-assisted and phonon-assisted heat transfer mechanisms in semiconductors as well as the various scattering processes occurring in the propagation of heat carriers.

Influence of Si, Sb and Sr Additions on the Microstructure, Mechanical Properties and Corrosion Behavior of AZ91 Magnesium Alloy

All the exciting work on developing new and better alloys has led older alloys, such as AZ9l , being abandoned by researchers. lt is believed that the full potential of AZ9l in automotive design has not been realized. Whatever works have been carried out on AZ9lalloy to improve its mechanical properties are insufficient in terms of its potential usage in auto industries. Due to the fact that AZ91 offers high room temperature mechanical properties and good castability, still this alloy is a primary choice for the auto component manufactures. Small improvement in its creep properties will have a huge impact in the transportation industries. Hence, in the present work, “Influence of Si, Sb and Sr Additions on the Microstructure, Mechanical Properties and Corrosion Behavior of AZ91 Magnesium Alloy”, an attempt has been made to improve the creep properties of AZ9l alloy through minor alloying elemental additions and to understand its strengthening mechanisms. The effect of alloying additions on the ageing and tensile properties of AZ9l is also studied. In addition to that, role of various intermetallics formed due to the alloying additions on the corrosion properties of AZ9l alloy is investigated.

Calorimetry of hydrogen desorption from a-Si nanoparticles

The process of hydrogen desorption from amorphous silicon (a-Si) nanoparticles grown by plasma-enhanced chemical vapor deposition (PECVD) has been analyzed by differential scanning calorimetry (DSC), mass spectrometry, and infrared spectroscopy, with the aim of quantifying the energy exchanged. Two exothermic peaks centered at 330 and 410 C have been detected with energies per H atom of about 50 meV. This value has been compared with the results of theoretical calculations and is found to agree with the dissociation energy of Si-H groups of about 3.25 eV per H atom, provided that the formation energy per dangling bond in a-Si is about 1.15 eV. It is shown that this result is valid for a-Si:H films, too.

Performance of correlation functionals in ab initio chemisorption cluster-model calculations: Alkali metals on Si(111)

The performance of different correlation functionals has been tested for alkali metals, Li to Cs, interacting with cluster models simulating different active sites of the Si(111) surface. In all cases, the ab initio Hartree-Fock density has been obtained and used as a starting point. The electronic correlation energy is then introduced as an a posteriori correction to the Hartree-Fock energy using different correlation functionals. By making use of the ionic nature of the interaction and of different dissociation limits we have been able to prove that all functionals tested introduce the right correlation energy, although to a different extent. Hence, correlation functionals appear as an effective and easy way to introduce electronic correlation in the ab initio Hartree-Fock description of the chemisorption bond in complex systems where conventional configuration interaction techniques cannot be used. However, the calculated energies may differ by some tens of eV. Therefore, these methods can be employed to get a qualitative idea of how important correlation effects are, but they have some limitations if accurate binding energies are to be obtained.

Studies on the optical band gap and cluster size of the polyaniline thin films irradiated with swift heavy Si ions

Polyaniline thin films prepared by RF plasma polymerisation were irradiated with 92MeV Si ions for various fluences of 1 1011, 1 1012 and 1 1013 ions/cm2. FTIR and UV–vis–NIR measurements were carried out on the pristine and Si ion irradiated polyaniline thin films for structural evaluation and optical band gap determination. The effect of swift heavy ions on the structural and optical properties of plasma-polymerised aniline thin film is investigated. Their properties are compared with that of the pristine sample. The FTIR spectrum indicates that the structure of the irradiated sample is altered. The optical studies show that the band gap of irradiated thin film has been considerably modified. This has been attributed to the rearrangement in the ring structure and the formation of CRC terminals. This results in extended conjugated structure causing reduction in optical band gap

The Effect of Periodic Silane Burst on the Properties of GaN on Si (111) Substrates

The periodic silane burst technique was employed during metalorganic chemical vapor deposition of epitaxial GaN on AlN buffer layers grown on Si (111). Periodic silicon delta doping during growth of both the AlN and GaN layers led to growth of GaN films with decreased tensile stresses and decreased threading dislocation densities, as well as films with improved quality as indicated by x-ray diffraction, micro-Raman spectroscopy, atomic force microscopy, and transmission electron microscopy. The possible mechanism of the reduction of tensile stress and the dislocation density is discussed in the paper.

Effects of Platinum on NiPtSiGe/n-SiGe and NiPtSi/n-Si Schottky Contacts

Solid phase reaction of NiPt/Si and NiPt/SiGe is one of the key issues for silicide (germanosilicide) technology. Especially, the NiPtSiGe, in which four elements are involved, is a very complex system. As a result, a detailed study is necessary for the interfacial reaction between NiPt alloy film and SiGe substrate. Besides using traditional material characterization techniques, characterization of Schottky diode is a good measure to detect the interface imperfections or defects, which are not easy to be found on large area blanket samples. The I-V characteristics of 10nm Ni(Pt=0, 5, 10 at.%) germanosilicides/n-Si₀/₇Ge₀.₃ and silicides/n-Si contact annealed at 400 and 500°C were studied. For Schottky contact on n-Si, with the addition of Pt in the Ni(Pt) alloy, the Schottky barrier height (SBH) increases greatly. With the inclusion of a 10% Pt, SBH increases ~0.13 eV. However, for the Schottky contacts on SiGe, with the addition of 10% Pt, the increase of SBH is only ~0.04eV. This is explained by pinning of the Fermi level. The forward I-V characteristics of 10nm Ni(Pt=0, 5, 10 at.%)SiGe/SiGe contacts annealed at 400°C were investigated in the temperature range from 93 to 300K. At higher temperature (>253K) and larger bias at low temperature (<253K), the I-V curves can be well explained by a thermionic emission model. At lower temperature, excess currents at lower forward bias region occur, which can be explained by recombination/generation or patches due to inhomogenity of SBH with pinch-off model or a combination of the above mechanisms.

Poly-Si₁₋xGex Film Growth for Ni Germanosilicided Metal Gate

Scaling down of the CMOS technology requires thinner gate dielectric to maintain high performance. However, due to the depletion of poly-Si gate, it is difficult to reduce the gate thickness further especially for sub-65 nm CMOS generation. Fully silicidation metal gate (FUSI) is one of the most promising solutions. Furthermore, FUSI metal gate reduces gate-line sheet resistance, prevents boron penetration to channels, and has good process compatibility with high-k gate dielectric. Poly-SiGe gate technology is another solution because of its enhancement of boron activation and compatibility with the conventional CMOS process. Combination of these two technologies for the formation of fully germanosilicided metal gate makes the approach very attractive. In this paper, the deposition of undoped Poly-Si₁₋xGex (0 < x < 30% ) films onto SiO₂ in a low pressure chemical vapor deposition (LPCVD) system is described. Detailed growth conditions and the characterization of the grown films are presented.

Homenaxe al Padre Galo. Primaria. 'Homenaje al Padre Galo. Primaria'.

Con ocasión de la celebración anual de la Selmana de les Lletres Asturianes, se homenajea a un escritor en lengua asturiana; para ello se proponen unidades didácticas como esta en la que se profundiza en el autor elegido ese año. En 1993 fue Fernán Coronas (seudónimo literario de Galo Antonio Fernández, más conocido como el Padre Galo(1884-1939); el objeto de este material es dar a conocer al personaje y su obra a la vez que se tratan aspectos culturales del concejo de Valdés, de donde era originario. Dirigida a los dos últimos ciclos de Primaria, el profesorado de asturiano puede adaptar las actividades propuestas y determinar el grado de profundidad con el que quiere trabajar los distintos aspectos culturales, literarios y lingüísticos presentados. Se trabaja desde el conocimiento del concejo (origen, costumbres, escudo, origen del nombre, características de las zonas de costa y braña) hasta lo que es un seudónimo (como lo es Fernán Coronas) o la pronunciación particular de algún fonema característico del bable occidental de Asturias. Las propuestas, escritas en primera persona como si el autor dirigiera las actividades, combina textos, partituras, imágenes.

Si sois padres... os puede interesar.

Dentro del Plan Municipal sobre drogodependencias del Ayuntamiento de Gijón se editó este folleto que aporta ideas para la reflexión sobre la tarea educativa de la familia, así como alguna estrategia sencilla para afrontar con más facilidad ciertas situaciones que preocupan habitualmente a los padres. Partiendo de situaciones reales se repasan aspectos como la comunicación padres e hijos, la potenciación de la toma de decisiones, la asunción de responsabilidades, el valor del ocio y como cubrirlo, la prevención, la influencia del modelo más cercano, etc. Finalmente se ofrecen direcciones de equipos de coordinación u orientación sobre toxicomanías, centros sociales y centros de salud mental del concejo de Gijón.

Storytelling : cosas que no se olvidan... si aprendemos a contarlas

Este libro es fruto del itinerario formativo en ingl??s previsto para el profesorado de educaci??n infantil. Las autoras, coordinadas por la asesora de Lenguas Extranjeras del CPR de Gij??n, participaron en las fases formativas iniciadas en 2005 con un curso intensivo de Lengua inglesa en el CPR de Gij??n y finalizado en el curso de English-in-York en el Reino Unido. En la ??ltima fase de este itinerario formativo han creado estos materiales sobre varias historias inventadas para ser contadas y para ser explotadas pedag??gicamente en infantil y primer ciclo de primaria. Los objetivos de este material son promover el desarrollo de la expresi??n y comprensi??n oral, aprovechar las t??cnicas narrativas para fomentar la creatividad y madurez del alumnado y usar destrezas y t??cnicas variadas desde un enfoque constructivista. Los temas abordados son: 1) Elaboraci??n de unidades did??cticas de ingl??s en educaci??n infantil. 2) Little Pumpkin and the Halloween Party. 3) Whitie's Trip. 4) The Proud Rainbow. En la primera parte se explica el proceso de dise??o, desarrollo y evaluaci??n de una unidad did??ctica. En las dem??s, se incluyen actividades, juegos, rimas, cuentos, canciones y juegos ilustrados y disponibles para su uso escolar.