Experimental measurement of microwave-induced electron spin-flip time

The electron spin resonance (ESR) is optically detected by monitoring the microwave-induced changes in the circular polarization of the neutral exciton (X) and the negatively charged exciton (X-) emission in CdTe quantum wells with low density of excess electrons. We find that the circular polarization of the X and X- emission is a mapping of the spin polarization of excess electrons. By analyzing the ESR-induced decrease in the circular polarization degree of the X emission, we deduce the microwave-induced electron spin-flip time >0.1 mus, which is much longer than the recombination time of X and X-. This demonstrates that the optically detected ESR in type I quantum wells with low density of excess electrons does not obey the prerequisite for the conventional optically detected magnetic resonance. (C) 2001 American Institute of Physics.

Blocking of the polaron effect and spin-split cyclotron resonance in a two-dimensional electron gas

Cyclotron resonance (CR) of high density GaAs quantum wells exhibits well-resolved spin splitting above the LO-phonon frequency. The spin-up and spin-down CR frequencies are reversed relative to the order expected from simple band nonparabolicity. We demonstrate that this is a consequence of the blocking of the polaron interaction which is a sensitive function of the filling of the Landau levels.

Combined transparent electrodes for high power GaN-based LEDs with long life time

In this paper fabrication of high power light emitting diodes (LEDs) with combined transparent electrodes on both P-GaN and N-GaN have been demonstrated. Simulation and experimental results show that comparing with traditional metal N electrodes the efficacy of LEDs with transparent N electrode is increased by more than 10% and it is easier in process than the other techniques. Further more, combining the transparent electrodes with dielectric anti-reflection film, the extraction efficiency can be improved by 5%. At the same time, the transparent electrodes were protected by the dielectric film and the reliability of LEDs can be improved.

Anomalous shift of the beating nodes in illumination-controlled In1-xGaxAs/In1-yAlyAs two-dimensional electron gases with strong spin-orbit interaction

The beating patterns in the Shubnikov-de Haas oscillatory magnetoresistance originating from zero-field spin splitting of two-dimensional electron gases (2DEGs) in In0.52Al0.48As/InxGa1-xAs/In0.52Al0.48As quantum wells with silicon delta doped on the upper barrier layer have been investigated by means of magnetotransport measurements before and after illumination. Contrary to the expectation, after each illumination, the beating nodes induced by the zero-field spin-splitting effect shift to lower and lower magnetic field due to the decrease in the zero-field spin-splitting energy of the 2DEGs. The anomalous phenomenon of the shift of the beating nodes and the decrease in spin-orbit coupling constants after illumination cannot be explained by utilizing the previous linear Rashba model. It is suggested that the decrease in the zero-field spin-splitting energy and the spin-orbit coupling constant arise from the nonlinear Rashba spin splitting.

Selective and lithography-independent fabrication of 20 nm nano-gap electrodes and nano-channels for nanoelectrofluidics applications

A new method has been developed to selectively fabricate nano-gap electrodes and nano-channels by conventional lithography. Based on a sacrificial spacer process, we have successfully obtained sub-100-nm nano-gap electrodes and nano-channels and further reduced the dimensions to 20 nm by shrinking the sacrificial spacer size. Our method shows good selectivity between nano-gap electrodes and nano-channels due to different sacrificial spacer etch conditions. There is no length limit for the nano-gap electrode and the nano-channel. The method reported in this paper also allows for wafer scale fabrication, high throughput, low cost, and good compatibility with modern semiconductor technology.

Fully lithography independent fabrication of nanogap electrodes for lateral phase-change random access memory application

Submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-06-07T01:33:41Z No. of bitstreams: 1 ApplPhysLett_96_213505.pdf: 1153920 bytes, checksum: 69931d8deb797813dd478b5dd0e292c0 (MD5)

Electropolymerized poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) film on ITO glass and its application in photovoltaic device

Poly(3,4-ethylenedioxythiopliene):poly(styrene sulfonate) (PEDOT:PSS) films have been electrochemically polymerized in situ on ITO glass substrate in boron trifluoride diethyl etherate electrolyte (BFEE). Cyclic voltammograms show good redox activity and stability of the PEDOT films. These films had been directly used to fabricate organic-inorganic hybrid solar cells with the structure of ITO/PEDOT/ZnO:MDMC-PPV/Al. The solar cells made of electrochemically polymerized films exhibit higher energy conversion efficiencies compared with that prepared by the spin-coating method, and the highest value is 0.33%. This in-situ electropolymerized method effectively simplifies fabricating procedures and may blaze a facile and economical route for producing high-efficiency solar cells.

Phonon-limited mobility in two-dimensional semiconductors with spin-orbit coupling

The authors demonstrate that the Rashba spin-orbit interaction in low-dimensional semiconductors can enhance or reduce the electron-phonon scattering rate by as much as 25%. The underlying mechanism is that the electron-phonon scattering phase space for the upper (lower) Rashba band is significantly enhanced (suppressed) by the spin-orbit interaction. While the scattering time decreases for the upper level, the mobility of the level increases due to an additional term in the electron velocity. (C) 2007 American Institute of Physics.

Description of a radially polarized Laguerre-Gauss beam beyond the paraxial approximation

Fifth-order corrected expressions for the fields of a radially polarized Laguerre-Gauss (R-TEMn1) laser beams are derived based on perturbative Lax series expansion. When the order of Laguerre polynomial is equal to zero, the corresponding beam reduces to the lowest-order radially polarized beam (R-TEM01). Simulation results show that the accuracy of the fifth-order correction for R-TEMn1 depends not only on the diffraction angle of the beam as R-TEM01 does, but also on the order of the beam. (c) 2007 Optical Society of America.

Radiation forces of a highly focused radially polarized beam on spherical particles

A radially polarized beam focused by a high-numerical-aperture (NA) objective has a strong longitudinal and nonpropagating electric field in the focal region, which implies that it is suitable for axial optical trapping. In this paper, we use the vectorial diffraction integral to represent the field distribution of the radially polarized beam focused by a high-NA objective and then employ the T-matrix method to compute the radiation forces on spherical particles. Effects of different parameters, such as the size of the sphere, the inner radius of the radially polarized beam, and the NA of the objective, on the radiation forces are presented.

Trapping of low-refractive-index particles with azimuthally polarized beam

Azimuthally polarized beams, focused by a high-numerical-aperture (NA) objective lens, form a hollow intensity distribution near the focus, which is appropriate for trapping low-refractive-index particles, in contrast to common linearly polarized or radially polarized beams. In this paper, the field distribution of the azimuthally polarized beam focused by a high-NA objective is described by the vectorial diffraction integral, and then the radiation forces on spherical particles with different parameters such as radius and refractive index are calculated by the T-matrix method. Numerical results show that the azimuthally polarized beam not only can steadily trap low-refractive-index particles at the focus center but also can trap multiple high-refractive-index particles around the focus center by virtue of the hollow-ring configuration. The range of the sizes of low-refractive-index particles that can be trapped steadily are presented, corresponding to different parameters such as the NA of the objective and the relative refractive index, based on which the NA of the objective can be selected to trap the appropriate size of particles. (C) 2009 Optical Society of America

Accurate description of a radially polarized Gaussian beam

An accurate description of a radially polarized fundamental Gaussian beam is presented on the basis of complex-source-point spherical waves (CSPSWs). In contrast to other descriptions based on the perturbative Lax series, the expressions for the electromagnetic field components of this description have explicit and simple mathematical forms. Numerical calculations show that both paraxial and fifth-order corrected beam descriptions have large relative error when the diffraction angle is large, while the accurate description based on the CSPSW approach proposed here can give field expressions which satisfy Maxwell's equations with great accuracy.