热致NiOx薄膜的结构和光学性质变化

利用直流磁控反应溅射技术制备了氧气和氩气的分压比为5:100的NiOx薄膜。利用X射线衍射仪(XRD)、扫描电镜(SEM)、原子力显微镜(AFM)和光谱仪研究了热处理对薄膜的微观结构和光学性质的影响, 并对沉积态薄膜的粉末进行了热分析。沉积态的NiOx薄膜在262 ℃时开始分解, 导致NiOx薄膜的透过率增加和反射率降低。X射线衍射和示差扫描量热曲线(DSC)分析表明, 在热处理过程中并无物相的变化, 光学性质的变化是由于NiOx薄膜热分解引起薄膜表面形貌发生变化而引起的。通过Kissinger公式计算出

氧化铋薄膜用于蓝光可录存储的研究

利用直流磁控溅射法在不同氧氩分压比条件下制备了BiOx薄膜。通过对薄膜在蓝光作用前后的反射率对比度变化的研究发现，氧氩分压比为50％时制备的薄膜具有最佳的光学对比度。利用X射线衍射仪(XRD)、X光电子能谱(XPS)和光谱仪研究了薄膜热处理前后的结构和光谱性质的变化。研究结果表明薄膜光学性质变化主要由薄膜中氧化铋的相变引起。蓝光静态测试结果显示氧氩分压比为50％条件下制备的BiOx薄膜具有很好好的记录敏感度，在11mW的记录功率和800ns的记录脉宽条件下，得到了52％的反射率对比度。此外，BiOx薄膜表现出了非常好的读出稳定性。

激光辐照引起Ge2Sb2Te5非晶态薄膜的电/光性质变化

研究了激光辐照引起Ge2Sb2Te5非晶态薄膜的电/光性质变化,当激光功率为580mW时薄膜的方块电阻有四个数量级（10^7～10^3Ω/□）的突变;对电阻发生突变前、中、后的三个样品进行了XRD测试,结果表明,随着激光功率的增大,薄膜由非晶态向晶态转变,用椭偏仪测试了结构转变前、中、后三个样品的光学常数,在可见光范围内薄膜的光学常数在波长相同情况下有：n（非晶态）〉n（中间态）〉n（晶态）,k（晶态）〉k（中间态）〉k（非晶态）,α（晶态）〉α（中间态）〉α（非晶态）,结合电阻变化曲线和XRD图谱讨论了激光辐照Ge2Sb2Te5非晶态薄膜的电/光性质变化同激光功率和结构转变之间的关系.

Si underlayer induced nano-ablation in AgInSbTe thin films

AgInSbTelSi thin films on glass substrates are prepared by dc magnetron sputtering at room temperature. Using Si underlayer as the thermal diffusion layer, the super-resolution nano-ablation holes with a size of 70nm in the AgInSbTe phase change films are obtained by a far-field focused laser experimental setup, with laser wavelength 405nm and objective-lens numerical aperture 0.90. The nano-ablation formation mechanism is analysed and discussed via the thermal diffusion of sample structures.

Structural change of laser-irradiated Ge2Sb2Te5 films studied by electrical property measurement

Sheet resistance of laser-irradiated Ge2Sb2Te5 thin films prepared by magnetron sputtering was measured by the four-point probe method. With increasing laser power the sheet resistance undergoes an abrupt drop from 10(7) to 10(3) Omega/square at about 580 mW. The abrupt drop in resistance is due to the structural change from amorphous to crystalline state as revealed by X-ray diffraction (XRD) study of the samples around the abrupt change point. Crystallized dots were also formed in the amorphous Ge2Sb2Te5 films by focused short pulse laser-irradiated, the resistivities at the crystallized dots and the non-crystallized area are 3.375 x 10(-3) and 2.725 Omega m, sheet resistance is 3.37 x 10(4) and 2.725 x 10(7) Omega/square respectively, deduced from the I-V Curves that is obtained by conductive atomic force microscope (C-AFM). (C) 2008 Elsevier B.V. All rights reserved.

Effect of alkali and alkaline earth fluoride introduction on thermal stability and structure of fluorophosphate glasses

The thermal stability and structure of RF-RF2-AIF(3)-Al(PO3)(3) fluorophosphate glasses were investigated. Analyses of infrared absorbance spectra and Raman spectra reveal that with increasing number of alkali and alkaline earth fluoride components, the sum of P-O-P bond and O-P-O bond increases and glass network is strengthened. Consequently, the inhibition to nucleation and crystallization processes is improved, which is proved by the increment of thermal stability factors AT and S determined by differential scanning calorimetry. In addition, it was found that LiF has poor ability to form glass in univalent alkali fluorides and MgF2 has comparative strong ability to form glass in bivalent alkaline earth fluorides. (c) 2006 Published by Elsevier B.V.

Si（111）衬底上ZnO薄膜的磁控溅射法制备及表征

采用磁控溅射法在(111)单晶硅衬底上沉积了ZnO薄膜，并研究了退火温度对ZnO薄膜晶体质量、晶粒度大小、应力和光致发光谱的影响。X射线衍射(XRD)表明薄膜为高度c轴择优取向。不同退火温度下的ZnO薄膜应力有明显变化。应力分布最为均匀的退火温度为500℃。室温下对ZnO薄膜进行了光谱分析，可观测到明显的紫光发射(波长为380nm左右)。实验结果表明，用磁控溅射法在单晶硅衬底上能获得高质量的ZnO薄膜。