PHOTOSIGNAL ENHANCEMENT IN AL-GAAS DIODES DUE TO SURFACE-PLASMONS AND GUIDED-WAVE MODES

Light of wavelength 632.8 nm and p-polarization is incident on a prism-air gap (varied from 0.7 to 7 mum)-Al-GaAs arrangement. Both the photosignal generated by the Schottky diode and the reflectance are measured as a function of the internal angle of incidence in the prism. There is significant, well-defined enhancement of the photosignal, up to a factor of approximately 7.5, associated with two different types of enhanced absorption modes. For air gaps <1.5 mum there is photosignal enhancement due to an enhanced absorption feature (reflectance dip) that occurs at an angle of incidence just above critical angle in the prism; this feature corresponds to the excitation of a surface plasmon polariton at the Al-air interface. For air gaps > 1 mum there are between one and ten photoresponse peaks at input angles less than the critical angle. The corresponding enhanced absorption features are due to leaky guided wave modes set up in the air gap.

ANALYSIS OF SURFACE-PLASMON POLARITON ENHANCEMENT IN PHOTODETECTION BY AL-GAAS SCHOTTKY DIODES

The surface plasmon polariton mediated photoresponse from Al-GaAs diodes is examined in a prism-air gap-diode configuration as a function of both the wavelength of the incident light and thickness of the Al electrode. The experimental data shows a pronounced dip in reflectance as a function of internal angle of incidence in the prism, due to the excitation of the surface plasmon polariton at the Al-air interface, and a corresponding peak in device photosignal. Careful modelling of reflectance and quantum efficiency data shows that the bulk of the signal is generated by light which is re-radiated from this surface mode into the semiconductor substrate where it is absorbed by the creation of electron-hole pairs in the depletion region. This holds for all the wavelengths used here (all are shorter than the GaAs absorption edge) and across the thickness range of the Al electrodes (20-50 nm). Quantum efficiencies in the range 0.5-22% and enhancement factors of typically 7.5 were recorded in this investigation.

Mitochondrial Transfer via Tunneling Nanotubes (TNT) is an Important Mechanism by which Mesenchymal Stem Cells Enhance Macrophage Phagocytosis in the in vitro and in vivo Models of ARDS

Mesenchymal stromal cells (MSC) have been reported to improve bacterial clearance in pre-clinical models of Acute Respiratory Distress Syndrome (ARDS) and sepsis. The mechanism of this effect is not fully elucidated yet. The primary objective of this study was to investigate the hypothesis that the anti-microbial effect of MSC in vivo depends on their modulation of macrophage phagocytic activity which occurs through mitochondrial transfer. We established that selective depletion of alveolar macrophages (AM) with intranasal (IN) administration of liposomal clodronate resulted in complete abrogation of MSC anti-microbial effect in the in vivo model of E.coli pneumonia. Furthermore, we showed that MSC administration was associated with enhanced AM phagocytosis in vivo. We showed that direct co-culture of MSC with monocyte-derived macrophages (MDMs) enhanced their phagocytic capacity. By fluorescent imaging and flow cytometry we demonstrated extensive mitochondrial transfer from MSC to macrophages which occurred at least partially through TNT-like structures. We also detected that lung macrophages readily acquire MSC mitochondria in vivo, and macrophages which are positive for MSC mitochondria display more pronounced phagocytic activity. Finally, partial inhibition of mitochondrial transfer through blockage of TNT formation by MSC resulted in failure to improve macrophage bioenergetics and complete abrogation of the MSC effect on macrophage phagocytosis in vitro and the anti-microbial effect of MSC in vivo.

Collectively, this work for the first time demonstrates that mitochondrial transfer from MSC to innate immune cells leads to enhancement in phagocytic activity and reveals an important novel mechanism for the anti-microbial effect of MSC in ARDS.

Compact, frequency reconfigurable, printed monopole antenna

This paper proposes a possible implementation of a compact printed monopole antenna, useful to operate in UMTS and WLAN bands. In order to accomplish that, a miniaturization technique based on the application of chip inductors is used in conjunction with frequency reconfiguration capability. The chip inductors change the impedance response of the monopole, allowing to reduce the resonant frequency. In order to be able to operate the antenna in these two different frequencies, an antenna reconfiguration technique based on PIN diodes is applied. This procedure allows the change of the active form of the antenna leading to a shift in the resonant frequency. The prototype measurements show good agreement with the simulation results.

Modulador ressonante em ponte assimétrica para alvo do ISOLDE - CERN

Trabalho Final de Mestrado para obtenção do grau de Mestre em Engenharia Electrotécnica Ramo de Automação e Electrónica Industrial

Reconfigurable antenna for mobile terminal

Trabalho Final de Mestrado para obtenção do grau de Mestrado em Engenharia Electrónica e Telecomunicações

Calculation of the magnetic field penetration depth for high-Tc cuprate superconductors based on the Interlayer Pair Tunneling model /

In this work, the magnetic field penetration depth for high-Tc cuprate superconductors is calculated using a recent Interlayer Pair Tunneling (ILPT) model proposed by Chakravarty, Sudb0, Anderson, and Strong [1] to explain high temperature superconductivity. This model involves a "hopping" of Cooper pairs between layers of the unit cell which acts to amplify the pairing mechanism within the planes themselves. Recent work has shown that this model can account reasonably well for the isotope effect and the dependence of Tc on nonmagnetic in-plane impurities [2] , as well as the Knight shift curves [3] and the presence of a magnetic peak in the neutron scattering intensity [4]. In the latter case, Yin et al. emphasize that the pair tunneling must be the dominant pairing mechanism in the high-Tc cuprates in order to capture the features found in experiments. The goal of this work is to determine whether or not the ILPT model can account for the experimental observations of the magnetic field penetration depth in YBa2Cu307_a7. Calculations are performed in the weak and strong coupling limits, and the efi"ects of both small and large strengths of interlayer pair tunneling are investigated. Furthermore, as a follow up to the penetration depth calculations, both the neutron scattering intensity and the Knight shift are calculated within the ILPT formalism. The aim is to determine if the ILPT model can yield results consistent with experiments performed for these properties. The results for all three thermodynamic properties considered are not consistent with the notion that the interlayer pair tunneling must be the dominate pairing mechanism in these high-Tc cuprate superconductors. Instead, it is found that reasonable agreement with experiments is obtained for small strengths of pair tunneling, and that large pair tunneling yields results which do not resemble those of the experiments.

Effet de la microstructure sur les propriétés excitoniques des polymères semi-conducteurs semi-cristallins

Les polymères semi-conducteurs semicristallins sont utilisés au sein de diodes électroluminescentes, transistors ou dispositifs photovoltaïques organiques. Ces matériaux peuvent être traités à partir de solutions ou directement à partir de leur état solide et forment des agrégats moléculaires dont la morphologie dicte en grande partie leurs propriétés optoélectroniques. Le poly(3-hexylthiophène) est un des polymères semi-conducteurs les plus étudiés. Lorsque le poids moléculaire (Mw) des chaînes est inférieur à 50 kg/mol, la microstructure est polycristalline et composée de chaînes formant des empilements-π. Lorsque Mw>50 kg/mol, la morphologie est semicristalline et composée de domaines cristallins imbriquées dans une matrice de chaînes amorphes. À partir de techniques de spectroscopie en continu et ultrarapide et appuyé de modèles théoriques, nous démontrons que la cohérence spatiale des excitons dans ce matériau est légèrement anisotrope et dépend de Mw. Ceci nous permet d’approfondir la compréhension de la relation intime entre le couplage inter et intramoléculaire sur la forme spectrale en absorption et photoluminescence. De plus, nous démontrons que les excitations photogénérées directement aux interfaces entre les domaines cristallins et les régions amorphes génèrent des paires de polarons liés qui se recombinent par effet tunnel sur des échelles de temps supérieures à 10ns. Le taux de photoluminescence à long temps de vie provenant de ces paires de charges dépend aussi de Mw et varie entre ∼10% et ∼40% pour les faibles et hauts poids moléculaires respectivement. Nous fournissons un modèle permettant d’expliquer le processus de photogénération des paires de polarons et nous élucidons le rôle de la microstructure sur la dynamique de séparation et recombinaison de ces espèces.

Dynamique de séparation de charges à l'hétérojonction de semi-conducteurs organiques

Une compréhension profonde de la séparation de charge à l’hétérojonction de semi-con- ducteurs organiques est nécessaire pour le développement de diodes photovoltaïques organiques plus efficaces, ce qui serait une grande avancée pour répondre aux besoins mondiaux en énergie durable. L’objectif de cette thèse est de décrire les processus impliqués dans la séparation de charges à hétérojonctions de semi-conducteurs organiques, en prenant en exemple le cas particulier du PCDTBT: PCBM. Nous sondons les excitations d’interface à l’aide de méthodes spectroscopiques résolues en temps couvrant des échelles de temps de 100 femto- secondes à 1 milliseconde. Ces principales méthodes spectroscopiques sont la spectroscopie Raman stimulée femtoseconde, la fluorescence résolue en temps et l’absorption transitoire. Nos résultats montrent clairement que le transfert de charge du PCDTBT au PCBM a lieu avant que l’exciton ne soit relaxé et localisé, un fait expérimental irréconciliable avec la théorie de Marcus semi-classique. La paire de charges qui est créée se divise en deux catégories : les paires de polarons géminales non piégées et les paires profondément piégées. Les premiers se relaxent rapidement vers l’exciton à transfert de charge, qui se recombine radiativement avec une constante de temps de 1– 2 nanoseconde, alors que les seconds se relaxent sur de plus longues échelles de temps via l’effet tunnel. Notre modèle photophysique quantitatif démontre que 2 % de l’excitation créée ne peut jamais se dissocier en porteurs de charge libre, un chiffre qui est en accord avec les rendements élevés rapportés pour ce type de système.

Growth and Characterization of ZnO based Heterojunction diodes and ZnO Nanostructuresby Pulsed Laser Ablation

Transparent conducting oxides (TCO’s) have been known and used for technologically important applications for more than 50 years. The oxide materials such as In2O3, SnO2 and impurity doped SnO2: Sb, SnO2: F and In2O3: Sn (indium tin oxide) were primarily used as TCO’s. Indium based oxides had been widely used as TCO’s for the past few decades. But the current increase in the cost of indium and scarcity of this material created the difficulty in obtaining low cost TCO’s. Hence the search for alternative TCO material has been a topic of active research for the last few decades. This resulted in the development of various binary and ternary compounds. But the advantages of using binary oxides are the easiness to control the composition and deposition parameters. ZnO has been identified as the one of the promising candidate for transparent electronic applications owing to its exciting optoelectronic properties. Some optoelectronics applications of ZnO overlap with that of GaN, another wide band gap semiconductor which is widely used for the production of green, blue-violet and white light emitting devices. However ZnO has some advantages over GaN among which are the availability of fairly high quality ZnO bulk single crystals and large excitonic binding energy. ZnO also has much simpler crystal-growth technology, resulting in a potentially lower cost for ZnO based devices. Most of the TCO’s are n-type semiconductors and are utilized as transparent electrodes in variety of commercial applications such as photovoltaics, electrochromic windows, flat panel displays. TCO’s provide a great potential for realizing diverse range of active functions, novel functions can be integrated into the materials according to the requirement. However the application of TCO’s has been restricted to transparent electrodes, ii notwithstanding the fact that TCO’s are n-type semiconductors. The basic reason is the lack of p-type TCO, many of the active functions in semiconductor originate from the nature of pn-junction. In 1997, H. Kawazoe et al reported the CuAlO2 as the first p-type TCO along with the chemical design concept for the exploration of other p-type TCO’s. This has led to the fabrication of all transparent diode and transistors. Fabrication of nanostructures of TCO has been a focus of an ever-increasing number of researchers world wide, mainly due to their unique optical and electronic properties which makes them ideal for a wide spectrum of applications ranging from flexible displays, quantum well lasers to in vivo biological imaging and therapeutic agents. ZnO is a highly multifunctional material system with highly promising application potential for UV light emitting diodes, diode lasers, sensors, etc. ZnO nanocrystals and nanorods doped with transition metal impurities have also attracted great interest, recently, for their spin-electronic applications This thesis summarizes the results on the growth and characterization of ZnO based diodes and nanostructures by pulsed laser ablation. Various ZnO based heterojunction diodes have been fabricated using pulsed laser deposition (PLD) and their electrical characteristics were interpreted using existing models. Pulsed laser ablation has been employed to fabricate ZnO quantum dots, ZnO nanorods and ZnMgO/ZnO multiple quantum well structures with the aim of studying the luminescent properties.

Resonant frequencies of circular-sided dual-port microstrip antenna

A dual-port microstrip antenna with a crescent shaped patch with excellent isolation betwecn the ports has been reportcd [I]. Since circular-sided geometries are inore compact than rectangular oncs, thcy find morc applications in microstrip arrays. The crcscent shaped antenna geometry [ I ] provides greater area rcductioii compared to other circular sided patches for broadband operation [2]. In this Lctter, formulac for calculating thc TM, I and TMZI mode resonant frequencies of this microstrip antenna, obtained by modifying the equations of a standard circular patch [3] are presentcd. Thcorctical results are compared with experimental observations aid the validity of the computation is established.

Electrical Characteristics of n-ZnO/p-Si Heterojunction Diodes Grown by Pulsed Laser Deposition at Different Oxygen Pressures

Heterojunction diodes of n-type ZnO/p-type silicon (100) were fabricated by 12 pulsed laser deposition of ZnO films on p-Si substrates in oxygen ambient at 13 different pressures. These heterojunctions were found to be rectifying with a 14 maximum forward-to-reverse current ratio of about 1,000 in the applied 15 voltage range of -5 V to +5 V. The turn-on voltage of the heterojunctions was 16 found to depend on the ambient oxygen pressure during the growth of the ZnO 17 film. The current density–voltage characteristics and the variation of the 18 series resistance of the n-ZnO/p-Si heterojunctions were found to be in line 19 with the Anderson model and Burstein-Moss (BM) shift.

Tunnel-Based Artificial Neural Network Technique to Calculate the Resonant Frequency of a Thick-Substrate Microstrip Antenna

The mathematical formulation of empirically developed formulas Jirr the calculation of the resonant frequency of a thick-substrate (h s 0.08151 A,,) microstrip antenna has been analyzed. With the use qt' tunnel-based artificial neural networks (ANNs), the resonant frequency of antennas with h satisfying the thick-substrate condition are calculated and compared with the existing experimental results and also with the simulation results obtained with the use of an IE3D software package. The artificial neural network results are in very good agreement with the experimental results

A reconfiguration dual-frequency slot-loaded microstrip antenna controlled by pin diodes

A novel reconfigurable, single feed, dual frequency, dualpolarized operation of a hexagonal slot-loaded square mwrostrip antenna is presented in this paper. A pin diode incorporated in the slot is used to switch the two operating frequencies considerably, without significantly affecting the radiation characteristics and gain. The proposed antenna provides a size reduction up to 61% and 26% Jor the two resonating frequencies, compared to standard rectangular patches. This design also gives considerable bandwidth up to 3.3% and 4.27%, for the two frequencies with a low operating frequency ratio