High-power electroabsorption modulator using intrastep quantum well

An electroabsorption modulator using the intrastep quantum well (IQW) active region is fabricated for optical network systems. The strain-compensated InGaAsP/InGaAsP IQW shows good material quality and improved modulation properties, high extinction ratio elliciency 10 dB/V and low capacitance (< 0.42 pF), with which an ultra high frequency (> 15 GHz) can be obtained. High-speed measurement under high-power excitation shows no power saturation up to excitation power of 21 dBm. To our knowledge, the input optical power is the highest reported for multi-quantum well EAMs without heat sinks.

Improving the optical profile of electroabsorption modulator using single-sided large optical cavity structure

An electroabsorption modulator with large optical cavity was designed and fabricated successfully. Both the simulated and experimental results show that, the larger optical cavity structure introduced could obviously improve the optical profile of EA modulator, the traditional elliptical near-field spot becomes more rounded, so it will match better with the optical fiber and is beneficial for raising the coupling efficiency.

ZnO nanostructures grown on AlN/sapphire substrates by MOCVD

ZnO nanorods and nanotubes are successful synthesized on AlN/sapphire substrates by metal-organic chemical vapour deposition (MOCVD). The different morphology and structure properties of ZnO nanorods and nanotubes are found to be allected by the AlN under-layer. The photoluminescence spectra show the optical properties of the ZnO nanorods and nanotubes, in which a blueshift of UV emission is observed and is attributed to the surface effect.

A comparison between AlN films grown by MOCVD using dimethylethylamine alane and trimethylaluminium as the aluminium precursors

Aluminium nitride (AlN) films grown with dimethylethylamine alane (DMEAA) are compared with the ones grown with trimethylaluminium (TMA). In the high-resolution x-ray diffraction Omega scans, the full width at half maximum (FWHM) of (0002) AlN films grown with DMEAA is about 0.70 deg, while the FWHM of (0002) AlN films grown with TMA is only 0.11 deg. The surface morphologies of the films are different, and the rms roughnesses of the surface are approximately identical. The rms roughness of AlN films grown with DMEAA is 47.4 nm, and grown with TMA is 69.4 nn. Although using DMEAA as the aluminium precursor cannot improve the AlN crystal quality, AlN growth can be reached at low temperature of 673 K. Thus, DMEAA is an alternative aluminium precursor to deposit AlN film at low growth temperatures.

Fabrication of InGaAlAs MQW buried heterostructure lasers by narrow stripe selective MOVPE

Fabrication of InGaAlAs MQW buried heterostructure (BH) lasers by narrow stripe selective MOVPE is demonstrated in this paper. High quality InGaAlAs MQWs were first grown by narrow stripe selective MOVPE without any etching process and assessed by analysing the cross sections and PL spectrums of the InGaAlAs MQWs. Furthermore, BHs were fabricated for the InGaAlAs MQW lasers by a developed unselective regrowth method, instead of conventional selective regrowth. The InGaAlAs MQW BH lasers exhibit good device characteristics, with a high internal differential quantum efficiency of 85% and a low internal loss of 6.7 cm(-1). Meanwhile, narrow divergence angles of the far field pattern are obtained for the fabricated lasers.

Selective growth of absorptive InGaAsP layer on InP corrugation for a buried grating structure

A buried grating structure with a selectively grown absorptive InGaAsP layer was fabricated and characterized by scanning electron microscopy and photoluminescence. The InP corrugation was etched by introducing a SiO2 mask that was more stable than a conventional photoresist mask during the etching process. Moreover, the corrugation was efficaciously preserved during the selective growth of the absorptive layer with the SiO2 mask. Though this absorptive layer was only selectively grown on the concave region of the corrugation, it has a high intensity around the peak wavelength in comparison with that of InGaAlAs multiple quantum well, which was grown on the buried grating structure.

Broad-band semiconductor optical amplifiers

Broad-band semiconductor optical amplifiers (SOAs) with different thicknesses and thin bulk tensile-strained active layers were fabricated and studied. Amplified spontaneous emission (ASE) spectra and gain spectra of SOAs were measured and analyzed at different CW biases. A maximal 3 dB ASE bandwidth of 136 nm ranging from 1480 to 1616 nm, and a 3 dB optical amplifier gain bandwidth of about 90 nm ranging from 1510 to 1600 nm, were obtained for the very thin bulk active SOA. Other SOAs characteristics such as saturation output power and polarization sensitivity were measured and compared. (c) 2006 Elsevier B.V. All rights reserved.

Anisotropic strain relaxation of thin Fe film on c(4 x 4) reconstructed GaAs (001) surface

National Natural Science Foundation of China 60836002 10674130 60521001;Major State Basic Research of China 2007CB924903;Chinese Academy of Sciences KJCX2.YW.W09-1

Strain-induced anodization of SiGe/Si multiple layers to form high density SiGe/Si heterogeneous nanorods

Nation Natural Science Foundation of China 50672079 60676027 60837001 60776007; National Basic Research Program of China (973 Program) 2007CB613404; China-MOST International Sci & Tech Cooperation and Exchange 2008DFA51230

A comparison between contactless electroreflectance and photoreflectance spectra from n-doped GaAs on a semi-insulating GaAs substrate

Contactless electroreflectance (CER) and photoreflectance (PR) measurements have been performed on samples with the structure of an n-doped GaAs epitaxial layer on a semi- insulating GaAs substrate. Modulated reflectance signals from the n-GaAs surface and those from the n-GaAs/SI-GaAs interface are superposed in PR spectra. For the case of CER measurement, however, Franz-Keldysh oscillations (FKOs) from the interface, which are observed in PR spectra, cannot be detected. This discrepancy is attributed to different modulation mechanisms of CER and PR. In CER experiments, the electric field modulation cannot be added to the interfacial electric field because of the effective screening by the fast response of carriers across the interface. FKOs from the interface without any perturbation by the surface signals are extracted by subtracting CER spectra from PR spectra.

Information geometry theory of high-dimension space and application for speaker independent continuous digit speech recognition

In the light of descriptive geometry and notions in set theory, this paper re-defines the basic elements in space such as curve and surface and so on, presents some fundamental notions with respect to the point cover based on the High-dimension space (HDS) point covering theory, finally takes points from mapping part of speech signals to HDS, so as to analyze distribution information of these speech points in HDS, and various geometric covering objects for speech points and their relationship. Besides, this paper also proposes a new algorithm for speaker independent continuous digit speech recognition based on the HDS point dynamic searching theory without end-points detection and segmentation. First from the different digit syllables in real continuous digit speech, we establish the covering area in feature space for continuous speech. During recognition, we make use of the point covering dynamic searching theory in HDS to do recognition, and then get the satisfying recognized results. At last, compared to HMM (Hidden Markov models)-based method, from the development trend of the comparing results, as sample amount increasing, the difference of recognition rate between two methods will decrease slowly, while sample amount approaching to be very large, two recognition rates all close to 100% little by little. As seen from the results, the recognition rate of HDS point covering method is higher than that of in HMM (Hidden Markov models) based method, because, the point covering describes the morphological distribution for speech in HDS, whereas HMM-based method is only a probability distribution, whose accuracy is certainly inferior to point covering.

Unselective regrowth of 1.5-mu m InGaAsP multiple-quantum-well distributed-feedback buried heterostructure lasers

Unselective regrowth for fabricating 1.5-mu m InGaAsP multiple-quantum well (MQW) distributed-feedback (DFB) buried heterostructure (BH) lasers is developed. The experimental results exhibit superior characteristics, such as a low threshold of 8.5 mA, high slope efficiency of 0.55 mW/mA, circular-like far-field patterns, the narrow line-width of 2.5 MHz, etc. The high performance of the devices effectively proves the feasibility of the new method to fabricate buried heterostructure lasers. (c) 2006 Society of Photo-Optical Instrumentation Engineers.

Material growth and device fabrication of highly strained InGaAs/InGaAsP long wavelength distributed feedback lasers

1.6-1.7 mu m highly strained InGaAs/InGaAsP distributed feedback lasers was grown and fabricated by low pressure mentalorganic chemical vapor deposition. High quality highly strained InGaAs/InP materials were obtained by using strain buffer layer. Four pairs of highly strained quantum wells were used in the devices and carrier blocking layer was used to improve the temperature characteristics of the devices. The uncoated 1.66 mu m and 1.74 mu m lasers with ridge wave guide 3 mu m wide have low threshold current (< 15mA) and high output power (> 14mW at 100mA). In the temperature range from 10 degrees C to 40 degrees C, the characteristic temperature T-0 of the 1.74 mu m laser is 57K, which is comparable to that of the 1.55 mu m-wavelength InGaAsP/InP-DFB laser.

Diode-end-pumped passively CW mode-locked Nd : YLF laser by the LT-In0.25Ga0.75As absorber

We have demonstrated a self-staring passively continuous-wave mode-locked diode end-pumped Nd:YLF laser with a semiconductor saturable absorber mirror of single-quantum-well (In0.25Ga0.75As) grown by metal-organic chemical-vapor deposition technique at low temperature. The saturable absorber was used as nonlinear absorber and output coupler simultaneously. Stable pulse duration of 3 ps has been achieved at the repetition rate of 98 MHz. The average output power was 530 mW at 1053 nm under the incident pump power of 10 W, corresponding to the peak power of 1.8 kW and pulse energy of 5.4 nJ.

Narrow stripe selective growth of oxide-free InGaAlAs/InGaAlAs MQWs by ultra-low pressure MOVPE

Narrow stripe selective growth of oxide-free InGaAlAs/InGaAlAs multiple quantum wells (MQWs) has been successfully performed on patterned InP substrates by ultra-low pressure MOVPE. Flat and clear interfaces were obtained for the narrow stripe selectively grown MQWs under optimized growth conditions. These selectively grown MQWs were covered by specific InP layers, which can keep the MQWs from being oxidized during the fabrication of the devices. The characteristics of selectively grown MQWs were strongly dependent on the mask stripe width. In particular, a PL peak wavelength shift of 73 nm, a PL intensity of more than 57% and a PL FWHM of less than 102 meV were observed simultaneously with a small mask stripe width varying from 0 to 40 mu m. The results were explained by considering the migration effect from the masked region (MMR) and the lateral vapour diffusion effect (LVD).