L'importanza dei tempi di osservazione nella formulazione dell'ipotesi ergodica

Questo elaborato tratta dell'ipotesi ergodica, problema centrale nell'ambito della giustificazione dei risultati della meccanica statistica, e dell'importanza che svolge in essa il tempo di osservazione. Dopo aver presentato varie formulazioni del problema ergodico, si esamina la questione dei tempi di ritorno e si mostra come il teorema di ricorrenza di Poincaré non sia in contraddizione con la possibilità del raggiungimento dell'equilibrio. Infine, l'analisi dell'apparente paradosso di Fermi-Pasta-Ulam e la discussione di alcune proposte di soluzione mostrano un'applicazione della trattazione astratta condotta precedentemente.

Tunnelling induced settlements in soils under the water table.

Tema di questo lavoro sono i cedimenti indotti dallo scavo di gallerie superficiali in terreni coesivi sotto falda. In questi casi la velocità di avanzamento dello scavo v e la permeabilità del mezzo k influenzano molto l'evoluzione della consolidazione. Le ipotesi di risposta non drenata o drenata del mezzo saturo, comunemente adottate, sono valide solo per rapporto v/k estremamente alto o basso. Nei casi intermedi, analisi numeriche accoppiate che tengano conto del processo di consolidazione durante lo scavo sono indispensabili. Ciò nonostante, queste sono molto rare in letteratura viste le notevoli difficoltà teoriche e numeriche ad esse associate. Proprio per non incrementare ulteriormente tali difficoltà, si è deciso di adottare modelli costitutivi semplici quali: il modello elastico perfettamente plastico con criterio di resistenza alla Mohr Coulomb e il Modified Cam Clay. Dopo un' introduzione sulla risposta del terreno nell'intorno dello scavo al variare del modello costitutivo, è stato svolto uno studio parametrico del processo di consolidazione. Ci si è, successivamente, concentrati sulla capacità dei tre modelli costitutivi di predire l'andamento dei cedimenti, mediante confronto con le soluzioni empiriche proposte in letteratura. Infine, sono state effettuate una serie di simulazioni 3D accoppiate passo-passo con il programma agli elementi finiti Abaqus al variare della permeabilità del mezzo e del rivestimento installato, supposto infinitamente permeabile o impermeabile. È emerso che per v/k<100 o v/k>100000 non è necessario esaminare nel dettaglio la dipendenza dal tempo della risposta del suolo e si possono ottenere risultati affidabili assumendo condizioni drenate o non drenate, rispettivamente. Nei casi intermedi, invece, le condizioni sono da ritenersi transienti e l'unico modo per effettuare correttamente le analisi dei cedimenti e lo studio della stabilità del fronte è mediante analisi numeriche 3D idromeccaniche accoppiate.

Proprietà radio dei blazar e loro uso nell'identificazione di sorgenti gamma extragalattiche

L'identificazione di un blazar è molto difficile, questo è un oggetto molto particolare e che ha un'attività molto ricca. Nella pratica l'identificazione di un blazar avviene confrontando la sua emissione in banda radio con la sua emissione in banda gamma, che sono entrambe proprie dei blazar. Il problema è che non si dispone di un telescopio in grado di rivelare con estrema precisione entrambe le bande, quindi si procede utilizzando i dati radio provenienti da un dato radiotelescopio e i dati in banda gamma provenienti da un altro telescopio. Quando le emissioni nelle due bande presentano, ad esempio, una variabilità simultanea, l'identificazione è certa. Ma questa minoranza di casi non è molto frequente e quindi spesso si procede con un'analisi probabilistica basata sulle posizioni delle sorgenti. Il lancio di Fermi nel 2008 ha portato ad un fortissimo aumento del numero di sorgenti gamma note e, fra queste, la maggior parte sono blazar. Una significativa frazione di queste sorgenti Fermi (circa il 30%) rimane non identificata. In questo lavoro vengono inizialmente caratterizzate le proprietà radio dei blazar e in particolare dei blazar gamma noti finora. In seguito verrà approfondita l'analisi delle sorgenti Fermi non identificate per stabilire una possibile compatibilità con le proprietà dei blazar e quindi per cercare di capire se queste sorgenti possano essere a loro volta dei blazar non ancora riconosciuti.

Fabrication and characterization of room temperature operating single electron transistors using focused ion beam technologies

The single electron transistor (SET) is a Coulomb blockade device, whose operation is based on the controlled manipulation of individual electrons. Single electron transistors show immense potential to be used in future ultra lowpower devices, high density memory and also in high precision electrometry. Most SET devices operate at cryogenic temperatures, because the charging energy is much smaller than the thermal oscillations. The room temperature operation of these devices is possible with sub- 10nm nano-islands due to the inverse dependance of charging energy on the radius of the conducting nano-island. The fabrication of sub-10nm features with existing lithographic techniques is a technological challenge. Here we present the results for the first room temperature operating SET device fabricated using Focused Ion Beam deposition technology. The SET device, incorporates an array of tungsten nano-islands with an average diameter of 8nm. The SET devices shows clear Coulomb blockade for different gate voltages at room temperature. The charging energy of the device was calculated to be 160.0 meV; the capacitance per junction was found to be 0.94 atto F; and the tunnel resistance per junction was calculated to be 1.26 G Ω. The tunnel resistance is five orders of magnitude larger than the quantum of resistance (26 k Ω) and allows for the localization of electrons on the tungsten nano-island. The lower capacitance of the device combined with the high tunnel resistance, allows for the Coulomb blockade effects observed at room temperature. Different device configurations, minimizing the total capacitance of the device have been explored. The effect of the geometry of the nano electrodes on the device characteristics has been presented. Simulated device characteristics, based on the soliton model have been discussed. The first application of SET device as a gas sensor has been demonstrated.

STUDY OF HYBRID ELECTRIC VEHICLE BATTERY MODELING AND CONTROL USING AUTONOMIE

This report presents the research results of battery modeling and control for hybrid electric vehicles (HEV). The simulation study is conducted using plug-and-play powertrain and vehicle development software, Autonomie. The base vehicle model used for testing the performance of battery model and battery control strategy is the Prius MY04, a power-split hybrid electric vehicle model in Autonomie. To evaluate the battery performance for HEV applications, the Prius MY04 model and its powertrain energy flow in various vehicle operating modes are analyzed. The power outputs of the major powertrain components under different driving cycles are discussed with a focus on battery performance. The simulation results show that the vehicle fuel economy calculated by the Autonomie Prius MY04 model does not match very well with the official data provided by the department of energy (DOE). It is also found that the original battery model does not consider the impact of environmental temperature on battery cell capacities. To improve battery model, this study includes battery current loss on coulomb coefficient and the impact of environmental temperature on battery cell capacity in the model. In addition, voltage losses on both double layer effect and diffusion effect are included in the new battery model. The simulation results with new battery model show the reduced fuel economy error to the DOE data comparing with the original Autonomie Prius MY04 model.

Dynamics of settling charged particles in turbulence : theory and experiments

It has been proposed that inertial clustering may lead to an increased collision rate of water droplets in clouds. Atmospheric clouds and electrosprays contain electrically charged particles embedded in turbulent flows, often under the influence of an externally imposed, approximately uniform gravitational or electric force. In this thesis, we present the investigation of charged inertial particles embedded in turbulence. We have developed a theoretical description for the dynamics of such systems of charged, sedimenting particles in turbulence, allowing radial distribution functions to be predicted for both monodisperse and bidisperse particle size distributions. The governing parameters are the particle Stokes number (particle inertial time scale relative to turbulence dissipation time scale), the Coulomb-turbulence parameter (ratio of Coulomb ’terminalar speed to turbulence dissipation velocity scale), and the settling parameter (the ratio of the gravitational terminal speed to turbulence dissipation velocity scale). For the monodispersion particles, The peak in the radial distribution function is well predicted by the balance between the particle terminal velocity under Coulomb repulsion and a time-averaged ’drift’ velocity obtained from the nonuniform sampling of fluid strain and rotation due to finite particle inertia. The theory is compared to measured radial distribution functions for water particles in homogeneous, isotropic air turbulence. The radial distribution functions are obtained from particle positions measured in three dimensions using digital holography. The measurements support the general theoretical expression, consisting of a power law increase in particle clustering due to particle response to dissipative turbulent eddies, modulated by an exponential electrostatic interaction term. Both terms are modified as a result of the gravitational diffusion-like term, and the role of ’gravity’ is explored by imposing a macroscopic uniform electric field to create an enhanced, effective gravity. The relation between the radial distribution functions and inward mean radial relative velocity is established for charged particles.

Integration of room temperature single electron transistor with CMOS subsystem

The single electron transistor (SET) is a charge-based device that may complement the dominant metal-oxide-semiconductor field effect transistor (MOSFET) technology. As the cost of scaling MOSFET to smaller dimensions are rising and the the basic functionality of MOSFET is encountering numerous challenges at dimensions smaller than 10nm, the SET has shown the potential to become the next generation device which operates based on the tunneling of electrons. Since the electron transfer mechanism of a SET device is based on the non-dissipative electron tunneling effect, the power consumption of a SET device is extremely low, estimated to be on the order of 10^-18J. The objectives of this research are to demonstrate technologies that would enable the mass produce of SET devices that are operational at room temperature and to integrate these devices on top of an active complementary-MOSFET (CMOS) substrate. To achieve these goals, two fabrication techniques are considered in this work. The Focus Ion Beam (FIB) technique is used to fabricate the islands and the tunnel junctions of the SET device. A Ultra-Violet (UV) light based Nano-Imprint Lithography (NIL) call Step-and-Flash- Imprint Lithography (SFIL) is used to fabricate the interconnections of the SET devices. Combining these two techniques, a full array of SET devices are fabricated on a planar substrate. Test and characterization of the SET devices has shown consistent Coulomb blockade effect, an important single electron characteristic. To realize a room temperature operational SET device that function as a logic device to work along CMOS, it is important to know the device behavior at different temperatures. Based on the theory developed for a single island SET device, a thermal analysis is carried out on the multi-island SET device and the observation of changes in Coulomb blockade effect is presented. The results show that the multi-island SET device operation highly depends on temperature. The important parameters that determine the SET operation is the effective capacitance Ceff and tunneling resistance Rt . These two parameters lead to the tunneling rate of an electron in the SET device, Γ. To obtain an accurate model for SET operation, the effects of the deviation in dimensions, the trap states in the insulation, and the background charge effect have to be taken into consideration. The theoretical and experimental evidence for these non-ideal effects are presented in this work.

Development of room temperature operating single electron transistor using FIB etching and deposition technology

The single-electron transistor (SET) is one of the best candidates for future nano electronic circuits because of its ultralow power consumption, small size and unique functionality. SET devices operate on the principle of Coulomb blockade, which is more prominent at dimensions of a few nano meters. Typically, the SET device consists of two capacitively coupled ultra-small tunnel junctions with a nano island between them. In order to observe the Coulomb blockade effects in a SET device the charging energy of the device has to be greater that the thermal energy. This condition limits the operation of most of the existing SET devices to cryogenic temperatures. Room temperature operation of SET devices requires sub-10nm nano-islands due to the inverse dependence of charging energy on the radius of the conducting nano-island. Fabrication of sub-10nm structures using lithography processes is still a technological challenge. In the present investigation, Focused Ion Beam based etch and deposition technology is used to fabricate single electron transistors devices operating at room temperature. The SET device incorporates an array of tungsten nano-islands with an average diameter of 8nm. The fabricated devices are characterized at room temperature and clear Coulomb blockade and Coulomb oscillations are observed. An improvement in the resolution limitation of the FIB etching process is demonstrated by optimizing the thickness of the active layer. SET devices with structural and topological variation are developed to explore their impact on the behavior of the device. The threshold voltage of the device was minimized to ~500mV by minimizing the source-drain gap of the device to 17nm. Vertical source and drain terminals are fabricated to realize single-dot based SET device. A unique process flow is developed to fabricate Si dot based SET devices for better gate controllability in the device characteristic. The device vi parameters of the fabricated devices are extracted by using a conductance model. Finally, characteristic of these devices are validated with the simulated data from theoretical modeling.

STATIC AND DYNAMIC STRESS CHANGE AT 27 VOLCANOES OF THE CENTRAL AMERICAN VOLCANIC ARC AFTER THE MW. 7.6 COSTA RICA EARTHQUAKE OF 5 SEPTEMBER 2012

Large earthquakes may strongly influence the activity of volcanoes through static and dynamic processes. In this study, we quantify the static and dynamic stress change on 27 volcanoes in Central America, after the Mw 7.6 Costa Rica earthquake of 5 September 2012. Following this event, 8 volcanoes showed signs of activity. We calculated the static stress change due to the earthquake on hypothetical faults under these volcanoes with Coulomb 3.3. For the dynamic stress change, we computed synthetic seismograms to simulate the waveforms at these volcanoes. We then calculated the Peak Dynamic Stress (PDS) from the modeled peak ground velocities. The resulting values are from moderate to minor changes in stress (10-1-10-2 MPa) with the PDS values generally an order of magnitude larger than the static stress change. Although these values are small, they may be enough to trigger a response by the volcanoes, and are on the order of stress changes implicated in many other studies of volcano and earthquake triggering by large earthquakes. This study provides insight into the poorly-constrained mechanism for remote triggering.

STOCHASTIC CHARGE TRANSPORT IN MULTI-ISLAND SINGLE-ELECTRON TUNNELING DEVICES

The physics of the operation of singe-electron tunneling devices (SEDs) and singe-electron tunneling transistors (SETs), especially of those with multiple nanometer-sized islands, has remained poorly understood in spite of some intensive experimental and theoretical research. This computational study examines the current-voltage (IV) characteristics of multi-island single-electron devices using a newly developed multi-island transport simulator (MITS) that is based on semi-classical tunneling theory and kinetic Monte Carlo simulation. The dependence of device characteristics on physical device parameters is explored, and the physical mechanisms that lead to the Coulomb blockade (CB) and Coulomb staircase (CS) characteristics are proposed. Simulations using MITS demonstrate that the overall IV characteristics in a device with a random distribution of islands are a result of a complex interplay among those factors that affect the tunneling rates that are fixed a priori (e.g. island sizes, island separations, temperature, gate bias, etc.), and the evolving charge state of the system, which changes as the source-drain bias (VSD) is changed. With increasing VSD, a multi-island device has to overcome multiple discrete energy barriers (up-steps) before it reaches the threshold voltage (Vth). Beyond Vth, current flow is rate-limited by slow junctions, which leads to the CS structures in the IV characteristic. Each step in the CS is characterized by a unique distribution of island charges with an associated distribution of tunneling probabilities. MITS simulation studies done on one-dimensional (1D) disordered chains show that longer chains are better suited for switching applications as Vth increases with increasing chain length. They are also able to retain CS structures at higher temperatures better than shorter chains. In sufficiently disordered 2D systems, we demonstrate that there may exist a dominant conducting path (DCP) for conduction, which makes the 2D device behave as a quasi-1D device. The existence of a DCP is sensitive to the device structure, but is robust with respect to changes in temperature, gate bias, and VSD. A side gate in 1D and 2D systems can effectively control Vth. We argue that devices with smaller island sizes and narrower junctions may be better suited for practical applications, especially at room temperature.

Contributions of the W-boson propagator to the μ and τ leptonic decay rates

We derive closed expressions and useful expansions for the contributions of the tree-level W-boson propagator to the the muon and tau leptonic decay rates. Calling M and m the masses of the initial and final charged leptons, our results in the limit m=0 are valid to all orders in M^2/M_W^2. In the terms of O(m_j^2/M_W^2) (m_j=M,m), our leading corrections, of O(M^2/M_W^2), agree with the canonical value (3/5) M^2/M_W^2, while the coefficient of our subleading contributions, of O(m^2/M_W^2), differs from that reported in the recent literature. A possible explanation of the discrepancy is presented. The numerical effect of the O(m_j^2/M_W^2) corrections is briefly discussed. A general expression, valid for arbitrary values of M_W, M and m in the range M_W>M>m, is given in the Appendix. The paper also contains a review of the traditional definition and evaluation of the Fermi constant.

A new Bayesian approach to the reconstruction of spectral functions

We present a novel approach for the reconstruction of spectra from Euclidean correlator data that makes close contact to modern Bayesian concepts. It is based upon an axiomatically justified dimensionless prior distribution, which in the case of constant prior function m(ω) only imprints smoothness on the reconstructed spectrum. In addition we are able to analytically integrate out the only relevant overall hyper-parameter α in the prior, removing the necessity for Gaussian approximations found e.g. in the Maximum Entropy Method. Using a quasi-Newton minimizer and high-precision arithmetic, we are then able to find the unique global extremum of P[ρ|D] in the full Nω » Nτ dimensional search space. The method actually yields gradually improving reconstruction results if the quality of the supplied input data increases, without introducing artificial peak structures, often encountered in the MEM. To support these statements we present mock data analyses for the case of zero width delta peaks and more realistic scenarios, based on the perturbative Euclidean Wilson Loop as well as the Wilson Line correlator in Coulomb gauge.

Highly-effective gating of single-molecule junctions: an electrochemical approach

We report an electrochemical gating approach with [similar]100% efficiency to tune the conductance of single-molecule 4,4′-bipyridine junctions using scanning-tunnelling-microscopy break junction technique. Density functional theory calculation suggests that electrochemical gating aligns molecular frontier orbitals relative to the electrode Fermi-level, switching the molecule from an off resonance state to “partial” resonance.

Redox control of thermopower and figure of merit in phase-coherent molecular wires

We demonstrate how redox control of intra-molecular quantum interference in phase-coherent molecular wires can be used to enhance the thermopower (Seebeck coefficient) S and thermoelectric figure of merit ZT of single molecules attached to nanogap electrodes. Using first principles theory, we study the thermoelectric properties of a family of nine molecules, which consist of dithiol-terminated oligo (phenylene-ethynylenes) (OPEs) containing various central units. Uniquely, one molecule of this family possesses a conjugated acene-based central backbone attached via triple bonds to terminal sulfur atoms bound to gold electrodes and incorporates a fully conjugated hydroquinonecentral unit. We demonstrate that both S and the electronic contribution Z el T to the figure of merit ZT can be dramatically enhanced by oxidizing the hydroquinone to yield a second molecule, which possesses a cross-conjugated anthraquinone central unit. This enhancement originates from the conversion of the pi-conjugation in the former to cross-conjugation in the latter, which promotes the appearance of a sharp anti-resonance at the Fermi energy. Comparison with thermoelectric properties of the remaining seven conjugated molecules demonstrates that such large values of S and Z el T are unprecedented. We also evaluate the phonon contribution to the thermal conductance, which allows us to compute the full figure of merit ZT = Z el T/(1 + κ p/κ el), where κ p is the phonon contribution to the thermal conductance and κ el is the electronic contribution. For unstructured gold electrodes, κ p/κ el Gt⃒ 1 and therefore strategies to reduce κ p are needed to realize the highest possible figure of merit.

Detection of back-to-back proton pairs in charged-current neutrino interactions with the ArgoNeuT detector in the NuMI low energy beam line

Short range nucleon-nucleon correlations in nuclei (NN SRC) carry important information on nuclear structure and dynamics. NN SRC have been extensively probed through two-nucleon knock- out reactions in both pion and electron scattering experiments. We report here on the detection of two-nucleon knock-out events from neutrino interactions and discuss their topological features as possibly involving NN SRC content in the target argon nuclei. The ArgoNeuT detector in the Main Injector neutrino beam at Fermilab has recorded a sample of 30 fully reconstructed charged current events where the leading muon is accompanied by a pair of protons at the interaction vertex, 19 of which have both protons above the Fermi momentum of the Ar nucleus. Out of these 19 events, four are found with the two protons in a strictly back-to-back high momenta configuration directly observed in the final state and can be associated to nucleon Resonance pionless mechanisms involving a pre-existing short range correlated np pair in the nucleus. Another fraction (four events) of the remaining 15 events have a reconstructed back-to-back configuration of a np pair in the initial state, a signature compatible with one-body Quasi Elastic interaction on a neutron in a SRC pair. The detection of these two subsamples of the collected (mu- + 2p) events suggests that mechanisms directly involving nucleon-nucleon SRC pairs in the nucleus are active and can be efficiently explored in neutrino-argon interactions with the LAr TPC technology.