1000 resultados para ER3 PHOSPHOR FILMS
Resumo:
SAW devices were fabricated on c-axis oriented ZnO films grown on Si substrates. Effects of film thickness on the film microstructure and acoustic frequencies were studied. Both Rayleigh and Sezawa mode waves were detected on the devices, and their resonant frequencies were found to decrease with increase in film thickness.
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Enhanced piezoresponse force microscopy was used to study flux closure vortexlike structures of 90° ferroelastic domains at the nanoscale in thin ferroelectric lead zirconium titanate (PZT) films. Using an external electric field, a vortexlike structure was induced far away from a grain boundary, indicating that physical edges are not necessary for nucleation contrary to previous suggestions. We demonstrate two different configurations of vortexlike structures, one of which has not been observed before. The stability of these structures is found to be size dependent, supporting previous predictions. © 2010 The American Physical Society.
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Using spcctroscopic ellipsometry (SE), we have measured the optical properties and optical gaps of a series of amorphous carbon (a-C) films ∼ 100-300 Å thick, prepared using a filtered beam of C+ ions from a cathodic arc. Such films exhibit a wide range of sp3-bonded carbon contents from 20 to 76 at.%, as measured by electron energy loss spectroscopy (EELS). The Taue optical gaps of the a-C films increase monotonically from 0.65 eV for 20 at.% sp3 C to 2.25 eV for 76 at.% sp3 C. Spectra in the ellipsometric angles (1.5-5 eV) have been analyzed using different effective medium theories (EMTs) applying a simplified optical model for the dielectric function of a-C, assuming a composite material with sp2 C and sp3 C components. The most widely used EMT, namely that of Bruggeman (with three-dimensionally isotropic screening), yields atomic fractions of sp3 C that correlate monotonically with those obtained from EELS. The results of the SE analysis, however, range from 10 to 25 at.% higher than those from EELS. In fact, we have found that the volume percent sp3 C from SE using the Bruggeman EMT shows good numerical agreement with the atomic percent sp3 C from EELS. The SE-EELS discrepancy has been reduced by using an optical model in which the dielectric function of the a-C is determined as a volume-fraction-weighted average of the dielectric functions of the sp2 C and sp3 C components. © 1998 Elsevier Science S.A.
Resumo:
Using spectroscopic ellipsometry (SE), we have measured the optical properties of amorphous carbon (a-C) films ∼ 10-30 nm thick prepared using a filtered beam of C+ ions from a cathodic arc. Such films exhibit a wide range of sp3-bonded carbon contents from 20 to 76 at.% as measured by electron energy loss spectroscopy (EELS), and a range of optical gaps from 0.65 eV (20 at.% sp3 C) to 2.25 eV (76 at.% sp3 C) as measured by SE. SE data from 1.5 to 5 eV have been analyzed by applying the most widely used effective medium theory (EMT) namely that of Bruggeman with isotropic screening, assuming a model of the material as a composite with sp2 C and sp3 C components. Although the atomic fractions of sp3 C deduced by SE with the Bruggeman EMT correlate monotonically with those obtained by EELS, the SE results range from 10 to 25 at.% higher. The possible origins of this discrepancy are discussed within the framework of an optical composite. Improved agreement between SE and EELS is obtained by employing a simple form for the EMT, in which the effective dielectric function is determined as a volume-fraction-weighted average of the dielectric functions of the two components. © 1998 Elsevier Science B.V. All rights reserved.
Resumo:
We investigate the morphological stability of epitaxial thin elastic films on a substrate by the Casimir force between the film surface and a flat plate. Critical undulation wavelengths are derived for two different limit conditions. Consideration of the Casimir force in both limit cases decreases the critical wavelength of the surface perturbation.
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In this paper, the mechanical properties of PI/Si_O, nanocomposite hybrid films with different silica doping levels are experimentally studied at low temperature. Experimental results show that the coefficient of thermal expansion (CTE) of the PI/Si_O, nanocomposite hybrid films gradually reduces when the ambiance temperature is decreased. At the liquid nitrogen temperature (77 K), the CTE value is about five times less than that at room temperature (287 K). The measured CTEs of hybrid films greatly decrease when doped with inorganic silica, especially when the silica doping level is more than 1 wt.%. However, too high silica contents (more than 10 wt.%) can cause problem to disperse effectively and the specimens become quite opaque. Experimental results also show that the effects of the pre-applied stress levels can be neglected on the CTE testing. When the ambient temperature changes from 287 to 77 K, the measured average values of the films' ultimate tensile strength (UTS) and Young's modulus increase about 60 and 90%, respectively, while the breaking elongation decreases about 42%.
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Tetrahedral amorphous carbon (ta-C) thin films are a promising material for use as biocompatible interfaces in applications such as in-vivo biosensors. However, the functionalization of ta-C film surface, which is a pre-requisite for biosensors, remains a big challenge due to its chemical inertness. We have investigated the bio-functionalization of ta-C films fabricated under specific physical conditions through the covalent attachment of functional biomolecular probes of peptide nucleic acid (PNA) to ta-C films, and the effect of fabrication conditions on the bio-functionalization. The study showed that the functional bimolecular probes such as protected long-chain ω-unsaturated amine (TFAAD) can be covalently attached to the ta-C surface through a well-defined structure. With the given fabrication process, electrochemical methods can be applied to the detection of biomolecular interaction, which establishes the basis for the development of stable, label-free biosensors. © 2011 Elsevier B.V. All rights reserved.
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Electrowetting (EW) is an effective way to manipulate small volume liquid in micro- and nano-devices, for it can improve its wettability. Since the late 1990s, electrowetting-on-dielectric (EWOD) has been used widely in bio-MEMS, lab-on-a-chip, etc. Polydimethlsiloxane (PDMS) is extensively utilized as base materials in the fabrication of biomedical micro- and nano-devices. The properties of thin PDMS films used as dielectric layer in EW are studied in this paper. The experimental results show that the thin PDMS films exhibit good properties in EWOD. As to PDMS films with different thicknesses, a threshold voltage and a hysteresis were observed in the EIWOD experiments.
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ZnO piezoelectric thin films were prepared on crystal substrate Si(111) by sol-gel technology, then characterized by scanning electron microscopy, X-ray diffraction and atomic force microscopy (AFM). The ZnO films characterized by X-ray diffraction are highly oriented in (002) direction with the growing of the film thickness. The morphologies, roughness and grain size of ZnO film investigated by AFM show that roughness and grain size of ZnO piezoelectric films decrease with the increase of the film thickness. The roughness dimension is 2.188-0.914 nm. The piezoelectric coefficient d(33) was investigated with a piezo-response force microscope (PFM). The results show that the piezoelectric coefficient increases with the increase of thickness and (002) orientation. When the force reference is close to surface roughness of the films, the piezoelectric coefficient measured is inaccurate and fluctuates in a large range, but when the force reference is big, the piezoelectric coefficient d(33) changes little and ultimately keeps constant at a low frequency.
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The evaluation of mechanical properties of carbon nanotube (CNT) fibers is inherently difficult. Here, Raman scattering-a generic methodology independent of mechanical measurements-is used to determine the interbundle strength and microscopic failure process for various CNT macroarchitectures. Raman data are used to predict the moduli of CNT films and fibers, and to illustrate the influences of the twisting geometries on the fibers' mechanical performances.
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The InAsxSb1-x films were grown on (100) GaSb substrates by liquid-phase epitaxy, and their structural, electrical, and optical properties were investigated. The high-resolution x-ray diffraction results reveal that the single crystalline InAsxSb1-x films with a midrange composition are epitaxially grown on the GaSb substrates. Temperature dependence of the Hall mobility was theoretically modeled by considering several predominant scattering mechanisms. The results indicate that ionized impurity and dislocation scatterings dominate at low temperatures, while polar optical phonon scattering is important at room temperature (RT). Furthermore, the InAsxSb1-x films with the higher As composition exhibit the better crystalline quality and the higher mobility. The InAs0.35Sb0.65 film exhibits a Hall mobility of 4.62x10(4) cm(2) V-1 s(-1). The cutoff wavelength of photoresponse is extended to about 12 mu m with a maximum responsivity of 0.21 V/W at RT, showing great potential for RT long-wavelength infrared detection. (C) 2008 American Institute of Physics. [DOI: 10.1063/1.2989116]
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Thickness and component distributions of large-area thin films are an issue of international concern in the field of material processing. The present work employs experiments and direct simulation Monte Carlo (DSMC) method to investigate three-dimensional low-density, non-equilibrium jets of yttrium and titanium vapor atoms in an electron-beams physical vapor deposition (EBPVD) system furnished with two or three electron-beams, and obtains their deposition thickness and component distributions onto 4-inch and 6-inch mono-crystal silicon wafers. The DSMC results are found in excellent agreement with our measurements, such as evaporation rates of yttrium and titanium measured in-situ by quartz crystal resonators, deposited film thickness distribution measured by Rutherford backscattering spectrometer (RBS) and surface profilometer and deposited film molar ratio distribution measured by RBS and inductively coupled plasma atomic emission spectrometer (ICP-AES). This can be taken as an indication that a combination of DSMC method with elaborate measurements may be satisfactory for predicting and designing accurately the transport process of EBPVD at the atomic level.