Effects of coupling lens on optical refrigeration of semiconductors

Optical refrigeration of semiconductors is encountering efficiency difficulties caused by nonradiative recombination and luminescence trapping. A commonly used approach for enhancing luminescence efficiency of a semiconductor device is coupling a lens with the device. We quantitatively study the effects of a coupling lens on optical refrigeration based on rate equations and photon recycling, and calculated cooling efficiencies of different coupling mechanisms and of different lens materials. A GaAs/GaInP heterostructure coupled with a homo-epitaxial GaInP hemispherical lens is recommended.

Self-organized InAs quantum wires on GaAs (331)A substrates

Self-organized InAs quantum wires (QWRs) were fabricated on the step edges of the GaAs (331)A surface by molecular beam epitaxy. The lateral size of InAs QWRs was saturated by the terrace width (i.e., 90 nm) while the size along the step lines increased with the increasing thicknesses of the InAs layers, up to 1100 nm. The height of InAs QWRs varied from 7.9 nm to 13 nm. The evolution of the morphology of InAs QWRs was attributed to the diffusion anisotropy of In adatoms.

基于属性的访问控制模型

利用受限数据库为理论对访问请求、属性权威、策略和判定过程的抽象描述，给出了一个基于属性的访问控制模型，讨论了模型中访问请求、属性权威、策略和判定过程之间的关系，给出了一个访问控制判定过程可终止的一种特定条件。

Characterization of recombination centres in n-type Hg1-xCdxTe

The defect levels in Hg1-xCdxTe P+N junction photodiodes (x = 0.4) were first studied using deep-level transient spectroscopy. Two electron traps, E(1)(0.06) and E(2)(0.15), and two hole traps, H-1(0.075) and H-2(0.29), were obtained, Characteristic parameters-the minority lifetime of the devices and the dynamic resistance-area product at zero bias-are estimated according to these levels. Results show that these two minority levels may be important in controlling lifetime. We have studied the recombination mechanism of the hole trap H-2(0.29) further. It has a large activation energy and satisfies the formula sigma(T) = sigma(x) exp(-E(F)/E(T)). This reflects the fact that its recombination mechanism is multiphonon nonradiative recombination, which is rarely reported in narrow-bandgap materials.

Ta/NiO/NiFe/Ta的磁性及界面的结构

利用磁控反应溅射方法以Ta作为缓冲层制备了Ta/NiO/NiFe/Ta薄膜，磁性分析表明，该结构薄膜的交换耦合场为9.6×10~3A/m，但量所需NiO的实际厚度增加了。采用X射线光电子能谱研究了Ta/NiO/Ta界面，并进行计算机谱图拟合分析。结果表明界面反应是影响层间耦合的一个重要因素。在Ta/NiO界面处发生了反应

长白山阔叶红松林生产力对气候变化响应的模拟研究

本论文以长白山阔叶红松林为研究对象，观测了阔叶红松林主要树种的光合生理生态特征，建立了单叶化汁卜片的光合作用模型，上推出群落的生产力模型，采用基于干物质生产过程的模型Sim-CYCLE，模型了该生态系统对·气候变化的响应。得到主要结论如下：（1）、在不同的CO2浓度和光合有效辐射条件下，长白山阔价卜红松林主要树种净光合速率月动态规律不同；气孔导度随着瞬时光合有效辐射强度和C02浓度的增加而有下降趋势。（2）、建立的适用于阔价f一红松林的单叶化气孔导度对环境因子气温（Ta）、光合有效辐射（PAR）、饱和水汽压（VPD）的响应模型：gs＝PAR（-1.606Ta2＋118.192Ta＋1878.67）／（355.700+PAR）（-430.433+VPL），这是一个基于叶片光合机理的群落生产力模型，在模拟了长白山阔叶红松林群落生产力时取得了满意的效果。（3）、采用干物质产量理论的Sim-CYCLE模型，通过样地尺度的参数化模拟表明，长白山阔叶红松林生态系统的总初级生产力（GPP）为14.89Mgcha-1、净初级生产力（NPP）为8.22MgCha-1、净生态系统生产力困EP）为2．67MgCha-1；在CO2倍增和温度上升时碳积累在增加，净初级生产力（NPP）为9.03±1.51MgCha-1、净生态系统生产力（NEP）为2.95±0.47MgCha-1。

The orbital scale evolution of regional climate recorded in a long sediment core from Heqing；China

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