Controlled growth of III-V compound semiconductor nano-structures and their application in quantum-devices

This paper reviews our work on controlled growth of self-assembled semiconductor nanostructures, and their application in light-emission devices. High-power, long-life quantum dots (QD) lasers emitting at similar to 1 mu m, red-emitting QD lasers, and long-wavelength QD lasers on GaAs substrates have successfully been achieved by optimizing the growth conditions of QDs.

Defects around self-organized InAs quantum dots measured by slow positron beam

Self-organized InAs quantum dots (QDs) have been fabricated by molecular beam epitaxy. The authors try to use a slow positron beam to detect defects in and around self-organized QDs, and point defects are observed in GaAs cap layer above QDs. For the self-organized InAs QDs without strain-reducing layer, it is free of defects. However, by introducing a strain-reducing layer, the density of point defects around larger sized InAs QDs increased. The above results suggest that low energy positron beam measurements may be a good approach to detect depth profiles of defects in QD materials. (c) 2007 American Institute of Physics.

Effect of oxidation on the optical and surface properties of AlGaN

The chemical properties of AlxGa1-xN surfaces exposed to air for different time periods are investigated by atomic force microscopy (AFM), photoluminescence (PL) measurement and X-ray photoelectron spectroscopy (XPS). PL and AFM results show that AlxGa1-xN samples exhibit different surface characteristics for different air-exposure times and Al contents. The XPS spectra of the Al 2p and Ga 2p core levels indicate that the peaks shifted slightly, from an Al-N to an Al-O bond and from a Ga-N to a Ga-O bond. All of these results show that the epilayer surface contains a large amount of Ga and Al oxides. (c) 2006 Elsevier B.V. All rights reserved.

Studies of 6H-SiC devices

Silicon carbide (SiC) is recently receiving increased attention due to its unique electrical and thermal properties. It has been regarded as the most appropriate semiconductor material for high power, high frequency, high temperature, and radiation hard microelectronic devices. The fabrication processes and characterization of basic device on 6H-SiC were systematically studied. The main works are summarized as follows:The homoepitaxial growth on the commercially available single-crystal 6H-SiC wafers was performed in a modified gas source molecular beam epitaxy system. The mesa structured p(+)n junction diodes on the material were fabricated and characterized. The diodes showed a high breakdown voltage of 800 V at room temperature. They operated with good rectification characteristics from room temperature to 673 K.Using thermal evaporation, Ti/6H-SiC Schottky barrier diodes were fabricated. They showed good rectification characteristics from room temperature to 473 K. Using neon implantation to form the edge termination, the breakdown voltage was improved to be 800 V.n-Type 6H-SiC MOS capacitors were fabricated and characterized. Under the same growing conditions, the quality of polysilicon gate capacitors was better than Al. In addition, SiC MOS capacitors had good tolerance to gamma rays. (C) 2002 Published by Elsevier Science B.V.

A novel application to quantum dot materials to the active region of superluminescent diodes

We have proposed a new superluminescent diodes (SLD) aimed at wide spectrum-quantum dot superluminescent diodes (QD-SLD), which is characterized by the introduction of a self-assembled asymmetric quantum dot pairs active region into conventional SLID structure. We investigated the structure and optical properties of a bilayer sample with different InAs deposition amounts in the first and second layer. We find that the structure of a self-assembled asymmetric quantum dot pairs can operate up to a 150 nm spectral width. In addition, as the first QDs' density can modulate the density of the QDs on the second layer, due to relatively high QDs density of the first layer, we can get the strong PL intensity from a broad range. We think that for the broad spectral width and the strong PL intensity, this structure can be a promising candidate for QW-SLD. (C) 2002 Elsevier Science B.V. All rights reserved.

A New Technique for Side Pumping of Double-Clad Fiber Lasers

We report a new technique, called SAP, for side pumping of double-clad, rare-earth-doped fiber lasers using fiber-coupled pump sources. The highest coupling efficiency can even exceed 92% in theory with this structure.

THE DEPENDENCE OF THE INVERSION LAYER THICKNESS ON THE FILM THICKNESS IN THIN-FILM SOI STRUCTURES

The dependence of the inversion-layer thickness on the film thickness in thin-film SOI structure is analyzed theoretically by using computer simulation. A new concept and parameter, the critical thickness of thin film all-bulk inversion, is introduced for the design of thin-film MOS/SOI devices. It is necessary to select the film thickness T(s1) close to the all-bulk strong inversion critical thickness in order to get high-speed and high-power operation of ultra-thin film MOS/SOI devices.

Studies of 6H-SiC devices

Silicon carbide (SiC) is recently receiving increased attention due to its unique electrical and thermal properties. It has been regarded as the most appropriate semiconductor material for high power, high frequency, high temperature, and radiation hard microelectronic devices. The fabrication processes and characterization of basic device on 6H-SiC were systematically studied. The main works are summarized as follows:The homoepitaxial growth on the commercially available single-crystal 6H-SiC wafers was performed in a modified gas source molecular beam epitaxy system. The mesa structured p(+)n junction diodes on the material were fabricated and characterized. The diodes showed a high breakdown voltage of 800 V at room temperature. They operated with good rectification characteristics from room temperature to 673 K.Using thermal evaporation, Ti/6H-SiC Schottky barrier diodes were fabricated. They showed good rectification characteristics from room temperature to 473 K. Using neon implantation to form the edge termination, the breakdown voltage was improved to be 800 V.n-Type 6H-SiC MOS capacitors were fabricated and characterized. Under the same growing conditions, the quality of polysilicon gate capacitors was better than Al. In addition, SiC MOS capacitors had good tolerance to gamma rays. (C) 2002 Published by Elsevier Science B.V.

Study of the LED based light calibration system for neutron wall detector

The light calibration system is one of the key components of Neutron Wall detector. It is used to calibrate the electronics and to monitor the long-term stability of the detector modules. With the detaile investigations, a calibration system with high-power LED (3W) driven by the fast pulses has been carried out. It is also tested together with the detector module of the Neutron Wall and the result of the preliminary calibration demonstrates that it fulfills the needs. It's a new design proposal to the light calibration system of the fast scintillator detector.

大功率电子加速器的预研与束流传输的研究

电子束辐照烟道气脱除502和NOx技术是一项将辐射物理和辐射化学紧密结合的高新技术。该项技术自1970年被提出后，经历了20多年的逐步发展，已进入了工业装置阶段。目前，在美国、德国、日本、波兰和我国的成都热电厂等处建立了中试厂和工业示范厂。当前在国际上，对一该项目的关键部件电子加速器有两种方案：即日新公司的高压变压器方案和以俄罗斯新西伯利亚核物理研究所的ElV型加速器为代表的谐振变压器型。根据目前国内的实际状况和满足我所及在兰州各研究所的物理实验的需要，中利4院近代物理所在已有技术力量的基础上，并在国家计委的大力支持下，立项研制大功率谐振变压器型电子加速器。这篇论文首先对1.5Mev/300mA三相谐振变压器型电子加速器的高压电极表面电场强度、分布电容、电感、三相谐振频率等作了预研。在此基础上，着重对强流静电加速管轴上电位和电场分布、平面电子枪的实际电流密度、电极膜孔透镜对束流的聚焦性能、加速管中电子轨迹和出射斜率、球面阴极的电子光学特性等作了详细的计算和分析，从计算得到的结果来看，所设计的电场能够满足束流传输的要求。另外，还对加速管非均匀场对电子负载的抑制作用，离子反轰阴极作了初步研究。论文的另一个重点是研究了静电加速管中强流电子束的空间电荷效应。根据实际情况，合理地建立了物理模型。并对模型上的4个不同位置的束内外径向电位分布、空间电荷对轴＿L电位的影响，以及空间电荷力对束流传输的影响等进行了详尽的理论计算和分析。在对轴上电场分布进行分析时，发现可以将电场沿轴向分为3个区域，并认真对每个区域的作用作了详细的分析说明。特别指出了，强流静电加速管的设计关键在加速管的前端，与弱流加速管相比，前者的变化幅度要大得多。论文最后对大功率电子加速器部件的加工和三相谐振变压器高压发生器模拟实验结果给予了介绍和分析。

云雾山封育草原对表土持水性的影响

应用离心机法测定土壤水分特征,研究黄土高原典型草原带退耕地植被恢复演替过程中土壤持水性能的变化特点及趋势。结果表明:土壤含水量与土壤水吸力之间符合幂函数θ=aSb,参数a的变化随着植被的演替呈增加趋势;由于植被的影响,在同一吸力范围内的土壤含水量不同,植被为顶级长芒草(Stipabungeana)群落时,土壤在各吸力段的含水量最高,坡耕地最低;其它群落土壤含水量随着水吸力的增加变化趋于一致;退耕地植被在演替过程中通过提高土壤有机质含量改善结构,降低容重并增加毛管孔隙度,对土壤的储水和持水性能产生作用。

Synthesis and spectroscopic studies of endohedral metallofullerenes Tb@C-2n

Endohedral metallofullerenes Tb@C-2n were synthesized and extracted with high-yield by K-H carbon-are evaporation and an effective pyridine extraction technique at high-temperature high-pressure. Laser-desorption-ionization time-of-flight (LD-TOF) mass spectrometry, X-ray photoelectron spectroscopy (XPS), solid-state fluorescent emission spectroscopy and gas phase derivation reaction with the self-chemical ionization mass spectrometric ion system of vinyl acetate were employed for studying the electronic structures, fluorescent properties and gas phase reactivities of metallofullerenes Tb@C-2n. The experimental results suggest that endohedral metallofullerenes Tb@C-2n would have the approximate structures of Tb3+@C-2n(3-) similar to other metallofullerenes, good fluorescent emission properties and active reactivities in gas phase ion-molecular reactions.

提高大型激光加工机器人精度的方法

本文介绍了大范围、高精度 5轴激光加工机器人系统的研究开发情况 .在提高其绝对精度的前提下 ,对大范围框架式机器人的结构、高精度机器人的误差补偿方法进行了探讨 .采用有限元分析的方法对机器人本体进行了优化设计 ,确保了高精度大型激光加工机器人设计的正确性 .基于测量数据 ,建立了机器人误差模型 ,对机器人系统误差进行了补偿 ,取得了较好的结果 ,保证机器人系统的激光加工精度

输电线路巡检机器人越障控制研究

介绍了超高压输电线路巡检机器人越障控制方法。根据巡检作业任务的要求,采用遥控与局部自主控制相结合的方法,实现了巡检机器人沿线行走及跨越障碍的功能。采用基于单目摄像头定位和视觉伺服的方法,实现了巡检机器人的自主越障控制。实验结果表明,该机器人可沿线行走并自主跨越障碍,从而验证了控制系统设计的有效性与合理性。

输电线巡检机器人控制与实验研究

近年来，机器人的应用越来越广泛和深入，输电线巡检机器人是当前特种作业机器人的研究热点之一，具有广泛的应用前景和实用价值。本文的研究内容是围绕国家“863”计划支持项目“500KV超高压输电线巡检机器人的研究”展开的。本研究工作针对巡检机器人的关键控制问题，主要由三部分组成：设计了巡检机器人的体系结构，并应用离散事件理论对机器人的任务、行为和动作建模；对巡检机器人双轮同步驱动控制进行了分析，并应用奇异摄动理论设计了控制器；研究了基于单目视觉的输电线立体定位方法及通过视觉伺服完成机器人自主抓线控制。 第一，介绍了巡检机器人的作业环境，重点探讨了机器人机械系统和控制系统的设计与实现。在机械子系统中，详细介绍了巡检机器人的机构实现与越障方法。在控制系统中详细阐述了基于分层递阶的机器人控制系统硬件组成。另外介绍了供电系统、无线传输系统、传感系统的设计与实现。分析了输电线路周围的电磁环境，及其对机器人的影响，并根据分析结果完成了对机器人的电磁防护设计。 第二，开展了输电线巡检机器人体系结构及人机交互系统研究，针对巡检机器人工作特点设计了基于规划和感知行为的混合式体系结构。针对巡检机器人工作环境设计了以机器人为中心的人机交互方式。参考前人建立的离散事件动力系统的层次结构和并行结构，提出了顺序结构并证明了其无阻塞性、可控性和监控器存在性，并结合以上三种结构建立了巡检机器人作业行为的离散动力学模型，分别获得了任务层、行为层和动作层的监控器。 第三，进行了巡检机器人双轮驱动控制研究。巡检机器人双轮行走机构为过驱动系统，对双轮行走系统进行了运动学和动力学建模，将一行走轮设为主动轮另一行走轮设为从动轮。针对两行走轮之间弹性关节导致的控制中的振荡问题，采用奇异摄动理论将系统分为快慢两个子系统；针对巡检机器人系统参数的时变性采用PD自适应算法设计了慢系统控制器；应用最优控制理论设计了快系统控制器。仿真结果验证了该方法的有效性。 第四，进行了输电线视觉定位和视觉伺服抓线问题的研究。输电线巡检机器人的自主越障控制是实现机器人实用化的关键问题。为实现巡检机器人自主越障，采用视觉伺服控制机械手臂自动抓线。为提取输电线图像特征点，针对输电线投影图像特征改进了边缘提取算法，应用聚类算法提取了输电线上的像素点。提出在机械手运动过程中采用EKF（扩展卡尔曼滤波）来实现对输电线的立体定位。在分析了当前基于图像的视觉伺服研究现状，建立了基于图像雅克比矩阵的输电线视觉伺服抓线模型。针对非标定状况下图像雅可比矩阵中的不确定参数，应用I&I(Immersion Invariant)自适应算法来实现无标定图像视觉伺服。针对机器人的动力学不确定性，设计了模糊自适应控制器，并证明了稳定性。仿真验证该方法的有效性，实验验证了基于视觉伺服的抓线控制的有效性。