Design and Test of a High QoS Radio Network for CBTC Systems in Subway Tunnels

Communications Based Train Control Systems require high quality radio data communications for train signaling and control. Actually most of these systems use 2.4GHz band with proprietary radio transceivers and leaky feeder as distribution system. All them demand a high QoS radio network to improve the efficiency of railway networks. We present narrow band, broad band and data correlated measurements taken in Madrid underground with a transmission system at 2.4 GHz in a test network of 2 km length in subway tunnels. The architecture proposed has a strong overlap in between cells to improve reliability and QoS. The radio planning of the network is carefully described and modeled with narrow band and broadband measurements and statistics. The result is a network with 99.7% of packets transmitted correctly and average propagation delay of 20ms. These results fulfill the specifications QoS of CBTC systems.

High Performance Algorithms and Implementations Using Sparse and Parallelization Techniques on MBS

In this paper we will see how the efficiency of the MBS simulations can be improved in two different ways, by considering both an explicit and implicit semi-recursive formulation. The explicit method is based on a double velocity transformation that involves the solution of a redundant but compatible system of equations. The high computational cost of this operation has been drastically reduced by taking into account the sparsity pattern of the system. Regarding this, the goal of this method is the introduction of MA48, a high performance mathematical library provided by Harwell Subroutine Library. The second method proposed in this paper has the particularity that, depending on the case, between 70 and 85% of the computation time is devoted to the evaluation of forces derivatives with respect to the relative position and velocity vectors. Keeping in mind that evaluating these derivatives can be decomposed into concurrent tasks, the main goal of this paper lies on a successful and straightforward parallel implementation that have led to a substantial improvement with a speedup of 3.2 by keeping all the cores busy in a quad-core processor and distributing the workload between them, achieving on this way a huge time reduction by doing an ideal CPU usage

Series combination of a switched dc-dc converter and a linear regulator for high frequency RF envelope amplifier

Classical linear amplifiers such as A, AB and B offer very good linearity suitable for RF power amplifiers. However, its inherent low efficiency limits its use especially in base-stations that manage tens or hundreds of Watts. The use of linearization techniques such as Envelope Elimination and Restoration (EER) allow an increase of efficiency keeping good linearity. This technique requires a very fast dc-dc power converter to provide variable voltage supply to the power amplifier. In this paper, several alternatives are analyzed to implement the envelope amplifier based on a cascade association of a switched dc-dc converter and a linear regulator. A simplified version of this approach is also suitable to operate with Envelope Tracking technique.

Designing a high performance parallel logic programming system

Compilation techniques such as those portrayed by the Warren Abstract Machine(WAM) have greatly improved the speed of execution of logic programs. The research presented herein is geared towards providing additional performance to logic programs through the use of parallelism, while preserving the conventional semantics of logic languages. Two áreas to which special attention is given are the preservation of sequential performance and storage efficiency, and the use of low overhead mechanisms for controlling parallel execution. Accordingly, the techniques used for supporting parallelism are efficient extensions of those which have brought high inferencing speeds to sequential implementations. At a lower level, special attention is also given to design and simulation detail and to the architectural implications of the execution model behavior. This paper offers an overview of the basic concepts and techniques used in the parallel design, simulation tools used, and some of the results obtained to date.

Efficiency at Rest: Magnetoencephalographic Resting-State Connectivity and Individual Differences in Verbal Working Memory

Inter-individual differences in cognitive performance are based on an efficient use of task-related brain resources. However, little is known yet on how these differences might be reflected on resting-state brain networks. Here we used Magnetoencephalography resting-state recordings to assess the relationship between a behavioral measurement of verbal working memory and functional connectivity as measured through Mutual Information. We studied theta (4?8 Hz), low alpha (8?10 Hz), high alpha (10?13 Hz), low beta (13?18 Hz) and high beta (18?30 Hz) frequency bands. A higher verbal working memory capacity was associated with a lower mutual information in the low alpha band, prominently among right-anterior and left-lateral sensors. The results suggest that an efficient brain organization in the domain of verbal working memory might be related to a lower resting-state functional connectivity across large-scale brain networks possibly involving right prefrontal and left perisylvian areas.

Three-level cell topology for a multilevel power supply to achieve High

This paper presents an envelope amplifier solution for envelope elimination and restoration (EER), that consists of a series combination of a switch-mode power supply (SMPS), based on three-level voltage cells and a linear regulator. This cell topology offers several advantages over a previously presented envelope amplifier based on a different multilevel topology (two-level voltage cells). The topology of the multilevel converter affects to the whole design of the envelope amplifier and a comparison between both design alternatives regarding the size, complexity and the efficiency of the solution is done. Both envelope amplifier solutions have a bandwidth of 2 MHz with an instantaneous maximum power of 50 W. It is also analyzed the linearity of the three-level cell solution, with critical importance in the EER technique implementation. Additionally, considerations to optimize the design of the envelope amplifier and experimental comparison between both cell topologies are included.

High efficient luminescence in type-II GaAsSb-capped InAs quantum dots upon annealing

The photoluminescence efficiency of GaAsSb-capped InAs/GaAs type II quantum dots (QDs) can be greatly enhanced by rapid thermal annealing while preserving long radiative lifetimes which are ∼20 times larger than in standard GaAs-capped InAs/GaAs QDs. Despite the reduced electron-hole wavefunction overlap, the type-II samples are more efficient than the type-I counterparts in terms of luminescence, showing a great potential for device applications. Strain-driven In-Ga intermixing during annealing is found to modify the QD shape and composition, while As-Sb exchange is inhibited, allowing to keep the type-II structure. Sb is only redistributed within the capping layer giving rise to a more homogeneous composition.

Primary optics for efficient high-brightness LED color mixing

In SSL general illumination, there is a clear trend to high flux packages with higher efficiency and higher CRI addressed with the use of multiple color chips and phosphors. However, such light sources require the optics provide color mixing, both in the near-field and far-field. This design problem is specially challenging for collimated luminaries, in which diffusers (which dramatically reduce the brightness) cannot be applied without enlarging the exit aperture too much. In this work we present first injection molded prototypes of a novel primary shell-shaped optics that have microlenses on both sides to provide Köhler integration. This shell is design so when it is placed on top of an inhomogeneous multichip Lambertian LED, creates a highly homogeneous virtual source (i.e, spatially and angularly mixed), also Lambertian, which is located in the same position with only small increment of the size (about 10-20%, so the average brightness is similar to the brightness of the source). This shell-mixer device is very versatile and permits now to use a lens or a reflector secondary optics to collimate the light as desired, without color separation effects. Experimental measurements have shown optical efficiency of the shell of 95%, and highly homogeneous angular intensity distribution of collimated beams, in good agreement with the ray-tracing simulations.

Dome-shaped Fresnel-Köhler: a novel high performance optical concentrator

The dome-shaped Fresnel-Köhler concentrator is a novel optical design for photovoltaic applications. It is based on two previous successful CPV optical designs: the FK concentrator with a flat Fresnel lens and the dome-shaped Fresnel lens system developed by Daido Steel, resulting on a superior concentrator. This optical concentrator will be able to achieve large concentration factors, high tolerance (i.e. acceptance angle) and high optical efficiency, three key issues when dealing with photovoltaic applications. Besides, its irradiance is distributed on the cell surface in a very even way. The concentrator has shown outstanding simulation results, achieving an effective concentration-acceptance product (CAP) value of 0.72, on-axis optical efficiency over 85% and good irradiance uniformity on the cell provided by Köhler integration. Furthermore, due to its high tolerance, we will present the dome-shaped Fresnel-Köhler concentrator as a cost-effective CPV optical design. All this makes this concentrator superior to other conventional competitors in the current market.

Progress on optimization of the solar cell fabrication process by impurity-to-efficiency predictive simulator

To optimize the last high temperature step of a standard solar cell fabrication process (the contact cofiring step), the aluminium gettering is incorporated in the Impurity-to-Efficiency simulation tool, so that it models the phosphorus and aluminium co-gettering effect on iron impurities. The impact of iron on the cell efficiency will depend on the balance between precipitate dissolution and gettering. Gettering efficiency is similar in a wide range of peak temperatures (600-850 ºC), so that this peak temperature can be optimized favoring other parameters (e.g. ohmic contact). An industrial co-firing step can enhance the co-gettering effect by adding a temperature plateau after the peak of temperature. For highly contaminated materials, a short plateau (menor que 2 min) at low temperature (600 ºC) is shown to reduce the dissolved iron.

Properties and applications of high electron density structures based on InN and related compounds

El objetivo principal del presente trabajo es estudiar y explotar estructuras que presentan un gas bidimensional de electrones (2DEG) basadas en compuestos nitruros con alto contenido de indio. Existen muchas preguntas abiertas, relacionadas con el nitruro de indio y sus aleaciones, algunas de las cuales se han abordado en este estudio. En particular, se han investigado temas relacionados con el análisis y la tecnología del material, tanto para el InN y heteroestructuras de InAl(Ga)N/GaN como para sus aplicaciones a dispositivos avanzados. Después de un análisis de la dependencia de las propiedades del InN con respecto a tratamientos de procesado de dispositivos (plasma y térmicos), el problema relacionado con la formación de un contacto rectificador es considerado. Concretamente, su dificultad es debida a la presencia de acumulación de electrones superficiales en la forma de un gas bidimensional de electrones, debido al pinning del nivel de Fermi. El uso de métodos electroquímicos, comparados con técnicas propias de la microelectrónica, ha ayudado para la realización de esta tarea. En particular, se ha conseguido lamodulación de la acumulación de electrones con éxito. En heteroestructuras como InAl(Ga)N/GaN, el gas bidimensional está presente en la intercara entre GaN y InAl(Ga)N, aunque no haya polarización externa (estructuras modo on). La tecnología relacionada con la fabricación de transistores de alta movilidad en modo off (E-mode) es investigada. Se utiliza un método de ataque húmedo mediante una solución de contenido alcalino, estudiando las modificaciones estructurales que sufre la barrera. En este sentido, la necesidad de un control preciso sobre el material atacado es fundamental para obtener una estructura recessed para aplicaciones a transistores, con densidad de defectos e inhomogeneidad mínimos. La dependencia de la velocidad de ataque de las propiedades de las muestras antes del tratamiento es observada y comentada. Se presentan también investigaciones relacionadas con las propiedades básicas del InN. Gracias al uso de una puerta a través de un electrolito, el desplazamiento de los picos obtenidos por espectroscopia Raman es correlacionado con una variación de la densidad de electrones superficiales. En lo que concierne la aplicación a dispositivos, debido al estado de la tecnología actual y a la calidad del material InN, todavía no apto para dispositivos, la tesis se enfoca a la aplicación de heteroestructuras de InAl(Ga)N/GaN. Gracias a las ventajas de una barrera muy fina, comparada con la tecnología de AlGaN/GaN, el uso de esta estructura es adecuado para aplicaciones que requieren una elevada sensibilidad, estando el canal 2DEG más cerca de la superficie. De hecho, la sensibilidad obtenida en sensores de pH es comparable al estado del arte en términos de variaciones de potencial superficial, y, debido al poco espesor de la barrera, la variación de la corriente con el pH puede ser medida sin necesidad de un electrodo de referencia externo. Además, estructuras fotoconductivas basadas en un gas bidimensional presentan alta ganancia debida al elevado campo eléctrico en la intercara, que induce una elevada fuerza de separación entre hueco y electrón generados por absorción de luz. El uso de metalizaciones de tipo Schottky (fotodiodos Schottky y metal-semiconductormetal) reduce la corriente de oscuridad, en comparación con los fotoconductores. Además, la barrera delgada aumenta la eficiencia de extracción de los portadores. En consecuencia, se obtiene ganancia en todos los dispositivos analizados basados en heteroestructuras de InAl(Ga)N/GaN. Aunque presentando fotoconductividad persistente (PPC), los dispositivos resultan más rápidos con respeto a los valores que se dan en la literatura acerca de PPC en sistemas fotoconductivos. ABSTRACT The main objective of the present work is to study and exploit the two-dimensionalelectron- gas (2DEG) structures based on In-related nitride compounds. Many open questions are analyzed. In particular, technology and material-related topics are the focus of interest regarding both InNmaterial and InAl(Ga)N/GaNheterostructures (HSs) as well as their application to advanced devices. After the analysis of the dependence of InN properties on processing treatments (plasma-based and thermal), the problemof electrical blocking behaviour is taken into consideration. In particular its difficulty is due to the presence of a surface electron accumulation (SEA) in the form of a 2DEG, due to Fermi level pinning. The use of electrochemical methods, compared to standard microelectronic techniques, helped in the successful realization of this task. In particular, reversible modulation of SEA is accomplished. In heterostructures such as InAl(Ga)N/GaN, the 2DEGis present at the interface between GaN and InAl(Ga)N even without an external bias (normally-on structures). The technology related to the fabrication of normally off (E-mode) high-electron-mobility transistors (HEMTs) is investigated in heterostructures. An alkali-based wet-etching method is analysed, standing out the structural modifications the barrier underwent. The need of a precise control of the etched material is crucial, in this sense, to obtain a recessed structure for HEMT application with the lowest defect density and inhomogeneity. The dependence of the etch rate on the as-grown properties is observed and commented. Fundamental investigation related to InNis presented, related to the physics of this degeneratematerial. With the help of electrolyte gating (EG), the shift in Raman peaks is correlated to a variation in surface eletron density. As far as the application to device is concerned, due to the actual state of the technology and material quality of InN, not suitable for working devices yet, the focus is directed to the applications of InAl(Ga)N/GaN HSs. Due to the advantages of a very thin barrier layer, compared to standard AlGaN/GaN technology, the use of this structure is suitable for high sensitivity applications being the 2DEG channel closer to the surface. In fact, pH sensitivity obtained is comparable to the state-of-the-art in terms of surface potential variations, and, due to the ultrathin barrier, the current variation with pH can be recorded with no need of the external reference electrode. Moreover, 2DEG photoconductive structures present a high photoconductive gain duemostly to the high electric field at the interface,and hence a high separation strength of photogenerated electron and hole. The use of Schottky metallizations (Schottky photodiode and metal-semiconductor-metal) reduce the dark current, compared to photoconduction, and the thin barrier helps to increase the extraction efficiency. Gain is obtained in all the device structures investigated. The devices, even if they present persistent photoconductivity (PPC), resulted faster than the standard PPC related decay values.

Wide-angle, high-concentration photovoltaics to compete with flat plate systems

A novel photovoltaic concentrator enables highly uniform irradiance on a small number of efficient solar cells. The maximum electrical power of a photovoltaic (PV) energy installation depends on three factors: the available irradiance, the size of the systems collecting sunlight, and the rate at which the device transforms light into electricity (the conversion efficiency). Developers can maximize the irradiance by carefully selecting the site and orientation of the solar facility. But they can only expand their sunlight collection systems for standard flat plate PV devices by increasing the number of solar cells, at greater cost. Here, we consider the advantages of an alternative PV system that produces more energy without increasing the number of cells used (actually, reducing it), by improving the conversion rates.We also present a new device that may enhance the commercial viability of such technologies.

Development and characterization of an FK photovoltaic concentrator for maximum conversion efficiency

The outdoor measurements of a single-cell concentrator PV module reaching a regressed 35.6% efficiency and a maximum peak efficiency of 36.0% (both corrected @Tcell=25ºC) are presented. This is the result of the joint effort by LPI and Solar Junction to demonstrate the potential of combining their respective state-of-the-art concentrator optics and solar cells. The LPI concentrator used is an FK, which is an advanced nonimaging concentrator using 4-channel Köhler homogenization, with a primary Fresnel lens and a refractive secondary made of glass. Solar Junction’s cell is a triplejunction solar cell with the A-SLAMTM architecture using dilute-nitrides.

Key reconciliation for high performance Quantum Key Distribution

Quantum Key Distribution is carving its place among the tools used to secure communications. While a difficult technology, it enjoys benefits that set it apart from the rest, the most prominent is its provable security based on the laws of physics. QKD requires not only the mastering of signals at the quantum level, but also a classical processing to extract a secret-key from them. This postprocessing has been customarily studied in terms of the efficiency, a figure of merit that offers a biased view of the performance of real devices. Here we argue that it is the throughput the significant magnitude in practical QKD, specially in the case of high speed devices, where the differences are more marked, and give some examples contrasting the usual postprocessing schemes with new ones from modern coding theory. A good understanding of its implications is very important for the design of modern QKD devices.

Efficiency of electrodynamic tether thrusters

The performance efficiency of electrodynamic bare tethers acting as thrusters in low Earth orbit, as gauged by the ratio of the system mass dedicated to thrust over mission impulse, is analyzed and compared to the performance efficiency of electrical thrusters. Tether systems are much lighter for times beyond six months in space-tug operations, where there is a dedicated solar array, and beyond one month for reboost of the International Space Station, where the solar array is already in place. Bare-tether propulsive efficiency itself, with the tether considered as part of the power plant, is higher for space tugs. Tether optimization shows that thin tapes have greater propulsive efficiency and are less sensitive to plasma density variations in orbit than cylindrical tethers. The efficiency increases with tape length if some segment next to the power supply at the top is insulated to make the tether potential bias vanish at the lower end; multitape tethers must be used to keep the efficiency high at high thrust levels. The efficiency has a maximum for tether-hardware mass equal to the fraction of power-subsystem mass going into ohmic power, though the maximum is very flat. For space tugs, effects of induced-bias changes in orbit might need to be reduced by choosing a moderately large power-subsystem to tether-hardware mass ratio or by tracking the current-voltage characteristic of the solar array.