A New Voltage Stability Index based on the Tangent Vector of the Power Flow Jacobian

This paper presents a new voltage stability index based on the tangent vector of the power flow jacobian. This index is capable of providing the relative vulnerability information of the system buses from the point of view of voltage collapse. In an effort to compare this index with a similar index, the popular voltage stability index L is studied and it is shown through system studies that the L index is not a very consistent indicator of the voltage collapse point of the system but is only a reasonable indicator of the vulnerability of the system buses to voltage collapse. We also show that the new index can be used in the voltage stability analysis of radial systems which is not possible with the L index. This is a significant result of this investigation since there is a lot of contemporary interest in distributed generation and microgrids which are by and large radial in nature. Simulation results considering several test systems are provided to validate the results and the computational needs of the proposed scheme is assessed in comparison with other schemes

A Networked Control Systems Perspective for Wide-Area Monitoring Control of Smart Power Grids

This paper presents a networked control systems (NCS) framework for wide area monitoring control of smart power grids. We consider a scenario in which wide area measurements are transmitted to controllers at remote locations. We model the effects of delays and packet dropouts due to limited communication capabilities in the grid. We also design a robust networked controller to damp wide-area oscillations based on information obtained from Wide Area Monitoring Systems (WAMS), and analyze the improvement in system stability due to networked control. With communication integration being an important feature of the smart grid, detailed consideration of the effects of communication is essential in the control design for future power systems. We believe that this work is an essential step in this direction.

Moisture Aided Degradation of Oil Impregnated Paper Insulation in Power Transformers

The presence of moisture in oil impregnated paper insulation (OIP) is detrimental to its long time performance. Until recently, it was thought insulation ageing was only a function of temperature and electrical stress. It has now been realized that moisture in all its forms causes rapid degradation of the electrical and mechanical properties with time. In this study, insulation paper samples were conditioned for desired level of moisture and were impregnated with premium quality transformer oil. The oil impregnated samples with 1 to 3 % moisture content were aged at 90 to 130 C. The indices for determining the extent of ageing considered in this work are degree of polymerization (DP), furan, carbon monoxide and carbon dioxide content. These quantities were monitored throughout the ageing experimental run. End-of-life (EOL) criterion used here is the reduction in the value of DP. Phenomenological models for estimating the service life of insulation are proposed and are validated against actual experimental data.

Design of a Low Power 64 Point FFT Architecture for WLAN Applications

This paper presents a Radix-4(3) based FFT architecture suitable for OFDM based WLAN applications. The radix-4(3) parallel unrolled architecture presented here, uses a radix-4 butterfly unit which takes all four inputs in parallel and can selectively produce one out of the four outputs. A 64 point FFT processor based on the proposed architecture has been implemented in UMC 130nm 1P8M CMOS process with a maximum clock frequency of 100 MHz and area of 0.83mm(2). The proposed processor provides a throughput of four times the clock rate and can finish one 64 point FFT computation in 16 clock cycles. For IEEE 802.11a/g WLAN, the processor needs to be operated at a clock rate of 5 MHz with a power consumption of 2.27 mW which is 27% less than the previously reported low power implementations.

Antenna Selection with Power Adaptation in Interference-Constrained Cognitive Radios

The performance of an underlay cognitive radio (CR) system, which can transmit when the primary is on, is curtailed by tight constraints on the interference it can cause to the primary receiver. Transmit antenna selection (AS) improves the performance of underlay CR by exploiting spatial diversity but with less hardware. However, the selected antenna and its transmit power now both depend on the channel gains to the secondary and primary receivers. We develop a novel Chernoffbound based optimal AS and power adaptation (CBBOASPA) policy that minimizes an upper bound on the symbol error probability (SEP) at the secondary receiver, subject to constraints on the average transmit power and the average interference to the primary. The optimal antenna and its power are presented in an insightful closed form in terms of the channel gains. We then analyze the SEP of CBBOASPA. Extensive benchmarking shows that the SEP of CBBOASPA for both MPSK and MQAM is one to two orders of magnitude lower than several ad hoc AS policies and even optimal AS with on-off power control.

Minimum switching loss pulse width modulation for reduced power conversion loss in reactive power compensators

Advanced bus-clamping switching sequences, which employ an active vector twice in a subcycle, are used to reduce line current distortion and switching loss in a space vector modulated voltage source converter. This study evaluates minimum switching loss pulse width modulation (MSLPWM), which is a combination of such sequences, for static reactive power compensator (STATCOM) application. It is shown that MSLPWM results in a significant reduction in device loss over conventional space vector pulse width modulation. Experimental verification is presented at different power levels of up to 150 kVA.

Anomalous power law decay in solvation dynamics of DNA: a mode coupling theory analysis of ion contribution

Several time dependent fluorescence Stokes shift (TDFSS) experiments have reported a slow power law decay in the hydration dynamics of a DNA molecule. Such a power law has neither been observed in computer simulations nor in some other TDFSS experiments. Here we observe that a slow decay may originate from collective ion contribution because in experiments DNA is immersed in a buffer solution, and also from groove bound water and lastly from DNA dynamics itself. In this work we first express the solvation time correlation function in terms of dynamic structure factors of the solution. We use mode coupling theory to calculate analytically the time dependence of collective ionic contribution. A power law decay in seen to originate from an interplay between long-range probe-ion direct correlation function and ion-ion dynamic structure factor. Although the power law decay is reminiscent of Debye-Falkenhagen effect, yet solvation dynamics is dominated by ion atmosphere relaxation times at longer length scales (small wave number) than in electrolyte friction. We further discuss why this power law may not originate from water motions which have been computed by molecular dynamics simulations. Finally, we propose several experiments to check the prediction of the present theoretical work.

Thermoelectric Properties of Two-Phase PbTe with Indium Inclusions

The thermoelectric figure of merit (zT) can be increased by introduction of additional interfaces in the bulk to reduce the thermal conductivity. In this work, PbTe with a dispersed indium (In) phase was synthesized by a matrix encapsulation technique for different In concentrations. x-Ray diffraction analysis showed single-phase PbTe with In secondary phase. Rietveld analysis did not show In substitution at either the Pb or Te site, and this was further confirmed by room-temperature Raman data. Low-magnification (similar to 1500x) scanning electron microscopy images showed micrometer-sized In dispersed throughout the PbTe matrix, while at high magnification (150,000x) an agglomeration of PbTe particles in the hot-pressed samples could be seen. The electrical resistivity (rho) and Seebeck coefficient (S) were measured from 300 K to 723 K. Negative Seebeck values showed all the samples to be n-type. A systematic increase in resistivity and higher Seebeck coefficient values with increasing In content indicated the role of PbTe-In interfaces in the scattering of electrons. This was further confirmed by the thermal conductivity (kappa), measured from 423 K to 723 K, where a greater reduction in the electronic as compared with the lattice contribution was found for In-added samples. It was found that, despite the high lattice mismatch at the PbTe-In interface, phonons were not scattered as effectively as electrons. The highest zT obtained was 0.78 at 723 K for the sample with the lowest In content.

Influence of sputter power on structural and electrical properties of TiO2 films for Al/TiO2/Si gate capacitors

Titanium dioxide (TiO2) thin films were deposited onto p-Si substrates held at room temperature by reactive Direct Current (DC) magnetron sputtering at various sputter powers in the range 80-200W. The as-deposited TiO2 films were annealed at a temperature of 1023K. The post-annealed films were characterized for crystallographic structure, chemical binding configuration, surface morphology and optical absorption. The electrical and dielectric properties of Al/TiO2/p-Si structure were determined from the capacitance-voltage and current-voltage characteristics. X-ray diffraction studies confirmed that the as-deposited films were amorphous in nature. After post-annealing at 1023K, the films formed at lower powers exhibited anatase phase, where as those deposited at sputter powers >160W showed the mixed anatase and rutile phases of TiO2. The surface morphology of the films varied significantly with the increase of sputter power. The electrical and dielectric properties on the air-annealed Al/TiO2/p-Si structures were studied. The effect of sputter power on the electrical and dielectric characteristics of the structure of Al/TiO2/p-Si (metal-insulator-semiconductor) was systematically investigated. Copyright (c) 2014 John Wiley & Sons, Ltd.

Thermoelectric properties of indium doped PbTe1-ySey alloys

Lead telluride and its alloys are well known for their thermoelectric applications. Here, a systematic study of PbTe1-ySey alloys doped with indium has been done. The powder X-Ray diffraction combined with Rietveld analysis confirmed the polycrystalline single phase nature of the samples, while microstructural analysis with scanning electron microscope results showed densification of samples and presence of micrometer sized particles. The temperature dependent transport properties showed that in these alloys, indium neither pinned the Fermi level as it does in PbTe, nor acted as a resonant dopant as in SnTe. At high temperatures, bipolar effect was observed which restricted the zT to 0.66 at 800 K for the sample with 30% Se content. (C) 2014 AIP Publishing LLC.

Thermoelectric properties of Indium doped Cu2GeSe3

Cu2Ge1-xInxSe3 (x = 0, 0.05, 0.1, 0.15) compounds were prepared by a solid state synthesis. The powder X-ray diffraction pattern of the undoped sample revealed an orthorhombic phase. The increase in doping content led to the appearance of additional peaks related to cubic and tetragonal phases along with the orthorhombic phase. This may be due to the substitutional disorder created by Indium doping. Scanning Electron Microscopy micrographs showed a continuous large grain growth with low porosity, which confirms the compaction of the samples after hot pressing. Elemental composition was measured by Electron Probe Micro Analyzer and confirmed that all the samples are in the stoichiometric ratio. The electrical resistivity (rho) systematically decreased with an increase in doping content, but increased with the temperature indicating a heavily doped semiconductor behavior. A positive Seebeck coefficient (S) of all samples in the entire temperature range reveal holes as predominant charge carriers. Positive Hall coefficient data for the compounds Cu2InxGe1-xSe3 (x = 0, 0.1) at room temperature (RT) confirm the sign of Seebeck coefficient. The trend of rho as a function of doping content for the samples Cu2InxGe1-xSe3 with x = 0 and 0.1 agrees with the measured charge carrier density calculated from Hall data. The total thermal conductivity increased with rising doping content, attributed to an increase in carrier thermal conductivity. The thermal conductivity revealed 1/T dependence, which indicates the dominance of Umklapp phonon scattering at elevated temperatures. The maximum thermoelectric figure of merit (ZT) = 0.23 at 723 K was obtained for Cu2In0.1Ge0.9Se3. (C)2014 Elsevier Ltd. All rights reserved.

Thermoelectric properties of Zn doped Cu2SnSe3

Zn doped ternary compounds Cu2ZnxSn1-xSe3 (x = 0, 0.025, 0.05, 0.075) were prepared by solid state synthesis. The undoped compound showed a monoclinic crystal structure as a major phase, while the doped compounds showed a cubic crystal structure confirmed by powder XRD (X-Ray Diffraction). The surface morphology and elemental composition analysis for all the samples were studied by SEM (Scanning Electron Microscopy) and EPMA (Electron Probe Micro Analyzer), respectively. SEM micrographs of the hot pressed samples showed the presence of continuous and homogeneous grains confirming sufficient densification. Elemental composition of all the samples revealed an off-stoichiometry, which was determined by EPMA. Transport properties were measured between 324 K and 773 K. The electrical resistivity decreased up to the samples with Zn content x = 0.05 in Cu2ZnxSn1-xSe3, and slightly increased in the sample Cu2Zn0.075Sn0.925Se3. This behavior is consistent with the changes in the carrier concentration confirmed by room temperature Hall coefficient data. Temperature dependent electrical resistivity of all samples showed heavily doped semiconductor behavior. All the samples exhibit positive Seebeck coefficient (S) and Hall coefficient indicating that the majority of the carriers are holes. A linear increase in Seebeck coefficient with increase in temperature indicates the degenerate semiconductor behavior. The total thermal conductivity of the doped samples increased with a higher amount of doping, due to the increase in the carrier contribution. The total and lattice thermal conductivity of all samples showed 1/1 dependence, which points toward the dominance of phonon scattering at high temperatures. The maximum 1/TZF = 0.48 at 773 K was obtained for the sample Cu2SnSe3 due to a low thermal conductivity compared to the doped samples. (C) 2014 Elsevier B.V. All rights reserved.

Coordination of Reactive Power in Grid-Connected Wind Farms for Voltage Stability Enhancement

This paper studies the feasibility of utilizing the reactive power of grid-connected variable-speed wind generators to enhance the steady-state voltage stability margin of the system. Allowing wind generators to work at maximum reactive power limit may cause the system to operate near the steady-state stability limit, which is undesirable. This necessitates proper coordination of reactive power output of wind generators with other reactive power controllers in the grid. This paper presents a trust region framework for coordinating reactive output of wind generators-with other reactive sources for voltage stability enhancement. Case studies on 418-bus equivalent system of Indian southern grid indicates the effectiveness of proposed methodology in enhancing the steady-state voltage stability margin.

Universal power law in crossover from integrability to quantum chaos

We study models of interacting fermions in one dimension to investigate the crossover from integrability to nonintegrability, i.e., quantum chaos, as a function of system size. Using exact diagonalization of finite-sized systems, we study this crossover by obtaining the energy level statistics and Drude weight associated with transport. Our results reinforce the idea that for system size L -> infinity nonintegrability sets in for an arbitrarily small integrability-breaking perturbation. The crossover value of the perturbation scales as a power law similar to L-eta when the integrable system is gapless. The exponent eta approximate to 3 appears to be robust to microscopic details and the precise form of the perturbation. We conjecture that the exponent in the power law is characteristic of the random matrix ensemble describing the nonintegrable system. For systems with a gap, the crossover scaling appears to be faster than a power law.

Solar thermal power system augmented with LHP

The present work reports the study of the bubble formation dynamics in the compensation chamber (CC) of the evaporator in Loop Heat Pipes. A series of experiments were conducted at different heat loads and bubbles in the CC were visualized. Bubbles diameter, frequency and velocity were measured and correlated against heat loads. Temperatures were measured at various locations and heat transfer coefficient was calculated. Performance of the LHP evaporator was evaluated at different heat loads. (C) 2013 The Authors. Published by Elsevier Ltd. This is an open access article under the CC BY-NC-ND license