Residual effect of natural and synthetic zinc chelates on zinc in a soil solution of a waterlogged acidic soil. Evolution of the pH and redox potential.

Zinc chelates have been widely used to correct deficiencies in this micronutrient in different soil types and under different moisture conditions. The aging of the metal in soil could cause a change in its availability. Over time the most labile forms of Zn could decrease in activity and extractability and change to more stable forms. Various soil parameters, such as redox conditions, time, soil type and moisture conditions, affect the aging process and modify the solubility of the metal. In general, redox conditions influence pH and also the chemical forms dissolved in the soil solution. Soil pH also affects Zn solubility; at high pH values, most of the Zn is present in forms that are not bioavailable to plants. The objective of this study was to determine the changes in Zn over time in a soil solution in a waterlogged acidic soil to which synthetic and natural chelates were applied

Residual effect of synthetic Zn chelates on the availability of this metal in different soils under waterlogged conditions.

Adding Zn improves crop growth, increases seed yield and also positively affects nutritional quality. After Zn fertilization, there is normally a period of several years in which residual effects provide an adequate supply of Zn to successive crops. Immediately after the application of Zn sources water-soluble Zn slowly but continually decreases. Various factors, including time and moisture conditions, affect the aging process and modify the solubility of the metal in soil and therefore its availability. In previous experiments, we studied the residual effect of synthetic chelates, obtained that the amounts of potentially available Zn decreased in the second cropping year due to aging processes. The present study was undertaken to verify variations in the residual effects of applying four different synthetic Zn sources

Multipath Reflectivity Estimation in Urban Environments for Synthetic Aperture Radar Images

Synthetic Aperture Radar (SAR) images a target region reflectivity function in the multi-dimensional spatial domain of range and cross-range. SAR synthesizes a large aperture radar in order to achieve a finer azimuth resolution than the one provided by any on-board real antenna. Conventional SAR techniques assume a single reflection of transmitted waveforms from targets. Nevertheless, today¿s new scenes force SAR systems to work in urban environments. Consequently, multiple-bounce returns are added to directscatter echoes. We refer to these as ghost images, since they obscure true target image and lead to poor resolution. By analyzing the quadratic phase error (QPE), this paper demonstrates that Earth¿s curvature influences the defocusing degree of multipath returns. In addition to the QPE, other parameters such as integrated sidelobe ratio (ISLR), peak sidelobe ratio (PSLR), contrast (C) and entropy (E) provide us with the tools to identify direct-scatter echoes in images containing undesired returns coming from multipath.

Kinetics of amorphization induced by swift heavy ions in α-quartz

The kinetics of amorphization in crystalline SiO2 (α-quartz) under irradiation with swift heavy ions (O+1 at 4 MeV, O+4 at 13 MeV, F+2 at 5 MeV, F+4 at 15 MeV, Cl+3 at 10 MeV, Cl+4 at 20 MeV, Br+5 at 15 and 25 MeV and Br+8 at 40 MeV) has been analyzed in this work with an Avrami-type law and also with a recently developed cumulative approach (track-overlap model). This latter model assumes a track morphology consisting of an amorphous core (area σ) and a surrounding defective halo (area h), both being axially symmetric. The parameters of the two approaches which provide the best fit to the experimental data have been obtained as a function of the electronic stopping power Se. The extrapolation of the σ(Se) dependence yields a threshold value for amorphization, Sth ≈ 2.1 keV/nm; a second threshold is also observed around 4.1 keV/nm. We believe that this double-threshold effect could be related to the appearance of discontinuous tracks in the region between 2.1 and 4.1 keV/nm. For stopping power values around or below the lower threshold, where the ratio h/σ is large, the track-overlap model provides a much better fit than the Avrami function. Therefore, the data show that a right modeling of the amorphization kinetics needs to take into account the contribution of the defective track halo. Finally, a short comparative discussion with the kinetic laws obtained for elastic collision damage is given.

Electronic damage in quartz (c-SiO2) by MeV ion irradiations: Potentiality for optical waveguiding applications

The damage induced on quartz (c-SiO2) by heavy ions (F, O, Br) at MeV energies, where electronic stopping is dominant, has been investigated by RBS/C and optical methods. The two techniques indicate the formation of amorphous layers with an isotropic refractive index (n = 1.475) at fluences around 1014 cm−2 that are associated to electronic mechanisms. The kinetics of the process can be described as the superposition of linear (possibly initial Poisson curve) and sigmoidal (Avrami-type) contributions. The coexistence of the two kinetic regimes may be associated to the differential roles of the amorphous track cores and preamorphous halos. By using ions and energies whose maximum stopping power lies inside the crystal (O at 13 MeV, F at 15 MeV and F at 30 MeV) buried amorphous layer are formed and optical waveguides at the sample surface have been generated.

Ionoluminescence induced by swift heavy ions in silica and quartz: a comparative analysis

Ionoluminescence (IL) of the two SiO2 phases, amorphous silica and crystalline quartz, has been comparatively investigated in this work, in order to learn about the structural defects generated by means of ion irradiation and the role of crystalline order on the damage processes. Irradiations have been performed with Cl at 10 MeV and Br at 15 MeV, corresponding to the electronic stopping regime (i.e., where the electronic stopping power Se is dominant) and well above the amorphization threshold. The light-emission kinetics for the two main emission bands, located at 1.9 eV (652 nm) and 2.7 eV (459 nm), has been measured under the same ion irradiation conditions as a function of fluence for both, silica and quartz. The role of electronic stopping power has been also investigated and discussed within current views for electronic damage. Our experiments provide a rich phenomenological background that should help to elucidate the mechanisms responsible for light emission and defect creation.

Ionoluminescence on α-quartz: mechanisms and modeling

Ionoluminescence of α - quartz exhibits two dominant emission bands peaking at 1.9 eV. (NBOHCs) and 2.7 eV (STEs. The evolution of the red emission yield does not show a correlation with the concentrations of neither the NBOHC nor with that of other color centers. The blue emission yield closely follows the amorphization kinetics independently measured by RBS/C spectrometry. A simple theoretical model has been proposed; it assumes that the formation and recombination of STEs are the primary event and both, the light emissions and the lattice structural damage are a consequence this phenomenon. The model leads to several simple mathematical equations that can be used to simulate the IL yields and provide a reasonable fit to experimental kinetic data.

In-situ optical reflectance characterization of ion beam irradiation damage on crystalline (quartz) and amorphous (silica) SiO2

Outline: • Motivation, aim • Complement waveguide data on silica • Optical data in quartz • Detailed analysis, i.e. both fluence kinetics and resolution • Efficiency of irradiation and analysis, samples, time... • Experimental set-up description • Reflectance procedure • Options: light source (lasers, white light..), detectors, configurations • Results and discussion • Comparative of amorphous and crystalline phases

Comparative study of ion beam-irradiation effects on silica and α-quartz: evidences for excitonic mechanisms

Introduction - SiO 2 •Simple composition and structure; Crystalline and amorphous phases •Adequate for atomistic simulations •Abundant in nature. Relevant for many technologies -Irradiation with swift heavy ions: •They provide EXTREME physical conditions •Very high excitation densities similar to high power lasers •Very high local temperatures •By playing with high energy and heavy mass (SHI) : •One can go from low electronic excitations (collisions regime) to high electronic excitations (electronic regime