Polarization strategies to improve the emission of a Si-based light source emitting at 1.55 um

We present a electroluminescence (EL) study of the Si-rich silicon oxide (SRSO) LEDs with and without Er3+ ions under different polarization schemes: direct current (DC) and pulsed voltage (PV). The power efficiency of the devices and their main optical limitations are presented. We show that under PV polarization scheme, the devices achieve one order of magnitude superior performance in comparison with DC. Time-resolved measurements have shown that this enhancement is met only for active layers in which annealing temperature is high enough (>1000 ◦C) for silicon nanocrystal (Si-nc) formation. Modeling of the system with rate equations has been done and excitation cross-sections for both Si-nc and Er3+ ions have been extracted.

Er-Coupled Si Nanocluster Waveguide

Rib-loaded waveguides containing Er3+-coupled Si nanoclusters (Si-nc) have been produced to observe optical gain at 1535 nm. The presence ofSi-nc strongly improves the efficiency ofEr 3+ excitation but may introduce optical loss mechanisms, such as Mie scattering and confined carrier absorption. Losses strongly affect the possibility of obtaining positive optical gain. Si-nc-related losses have been minimized to 1 dB/cm by lowering the annealing time ofthe Er3+-doped silicon-rich oxide deposited by reactive magnetron cosputtering. Photoluminescence (PL) and lifetime measurements show that all Er3+ ions are optically active while those that can be excited at high pump rates via Si-nc are only a small percentage. Er3+ absorption cross section is found comparable to that ofEr 3+ in SiO 2.However, dependence on the effective refractive index has been found. In pump-probe measurements, it is shown how the detrimental role ofconfined carrier absorption can be attenuated by reducing the annealing time. A maximum signal enhancement ofabout 1.34 at 1535 nm was measured.

Microinductive signal conditioning with resonant differential filters: high-sensitivity biodetection applications

Inductive-based devices integrated with Si technology for biodetection applications are characterized, using simple resonant differential filter configurations. This has allowed the corroboration of the viability of the proposed circuits, which are characterized by their very high simplicity, for microinductive signal conditioning in high-sensitivity sensor devices. The simulation of these simple circuits predicts sensitivities of the differential output voltage which can achieve values in the range of 0.1-1 V/nH, depending on the coil parameters. These very high-sensitivity values open the possibility for the experimental detection of extremely small inductance changes in the devices. For real microinductive devices, both series resistance and parasitic capacitive components contribute to the decrease of the differential circuit sensitivity. Nevertheless, measurements performed using micro-coils fabricated with relatively high series resistance and coupling parasitic effects have allowed detection of changes in the range of 2 nH. which are compatible with biodetection applications with estimated detection limits below the picomolarity range.

Residual Stress Measurement on a MEMS Structure With High-Spatial Resolution

A new approach to the local measurement of residual stress in microstructures is described in this paper. The presented technique takes advantage of the combined milling-imaging features of a focused ion beam (FIB) equipment to scale down the widely known hole drilling method. This method consists of drilling a small hole in a solid with inherent residual stresses and measuring the strains/displacements caused by the local stress release, that takes place around the hole. In the presented case, the displacements caused by the milling are determined by applying digital image correlation (DIC) techniques to high resolution micrographs taken before and after the milling process. The residual stress value is then obtained by fitting the measured displacements to the analytical solution of the displacement fields. The feasibility of this approach has been demonstrated on a micromachined silicon nitride membrane showing that this method has high potential for applications in the field of mechanical characterization of micro/nanoelectromechanical systems.

Model for the emission of Si+ ions during oxygen bombardment of Si(100) surfaces

The variation in the emission of Si+ ions from ion-beam-induced oxidized silicon surfaces has been studied. The stoichiometry and the electronic structure of the altered layer has been characterized using x-ray photoelectron spectroscopy (XPS). The XPS analysis of the Si 2p core level indicates the strong presence of suboxide chemical states when bombarding at angles of incidence larger than 30 °. Since the surface stoichiometry or degree of oxidation varies with the angle of incidence, the corresponding valence-band structures also differ among each other. A comparison between experimental measurements and theoretically calculated Si and SiO2 valence bands indicates that the valence bands for the altered layers are formed by a combination of those two. Since Si-Si bonds are present in the suboxide molecules, the top of the respective new valence bands are formed by the corresponding 3p-3p Si-like subbands, which extend up to the Si Fermi level. The changes in stoichiometry and electronic structure have been correlated with the emission of Si+ ions from these surfaces. From the results a general model for the Si+ ion emission is proposed combining the resonant tunneling and local-bond-breaking models.

Improvement of the quality factor of RF integrated inductors by layout optimization

A systematic method to improve the quality (Q) factor of RF integrated inductors is presented in this paper. The proposed method is based on the layout optimization to minimize the series resistance of the inductor coil, taking into account both ohmic losses, due to conduction currents, and magnetically induced losses, due to eddy currents. The technique is particularly useful when applied to inductors in which the fabrication process includes integration substrate removal. However, it is also applicable to inductors on low-loss substrates. The method optimizes the width of the metal strip for each turn of the inductor coil, leading to a variable strip-width layout. The optimization procedure has been successfully applied to the design of square spiral inductors in a silicon-based multichip-module technology, complemented with silicon micromachining postprocessing. The obtained experimental results corroborate the validity of the proposed method. A Q factor of about 17 have been obtained for a 35-nH inductor at 1.5 GHz, with Q values higher than 40 predicted for a 20-nH inductor working at 3.5 GHz. The latter is up to a 60% better than the best results for a single strip-width inductor working at the same frequency.

Systematic trends in self-consistent calculations of linear quantum wires

Systematic trends in the properties of a linear split-gate heterojunction are studied by solving iteratively the Poisson and Schrödinger equations for different gate potentials and temperatures. A two-dimensional approximation is presented that is much simpler in the numerical implementation and that accurately reproduces all significant trends. In deriving this approximation, we provide a rigorous and quantitative basis for the formulation of models that assumes a two-dimensional character for the electron gas at the junction.

Application de nanoparticules luminescentes pour la detection de traces papillaires

Après avoir situé le contexte de la recherche et défini les enjeux principaux du travail, différents types de nanoparticules, ainsi que leurs principales caractéristiques, sont parcourues. L'élaboration de critères de sélection ayant permis de déterminer les types de nanoparticules potentiellement adaptés à !a détection de traces papillaires, l'étude s'est alors focalisée sur deux familles de composés: les quantum dots et les nanoparticules d'oxyde de silicium. Deux types de quantum dots ont été synthétisés : le tellurure de cadmium et le sulfure de zinc). Ils n'ont toutefois pas permis la détection de traces papillaires réalistes. En effet, seules des traces fraîches et enrichies en sécrétions ont pu être mises en évidence. Toutefois, des résultats ont été obtenus avec les deux types de quantum dots pour la détection de traces papillaires sanglantes. Après optimisation, les techniques rivalisent avec les méthodes couramment appliquées en routine. Cependant, l'interaction se produisant entre les traces et les nanoparticules n'a pas pu être déterminé. Les nanoparticules d'oxyde de silicium ont dès lors été appliquées dans le but de comprendre plus en détails les interactions avec les traces papillaires. Ces nanoparticules ont l'avantage d'offrir un très bon contrôle de surface, permettant ainsi une étude détaillée des phénomènes en jeu. Des propriétés de surface variables ont dès lors été obtenues en greffant diverses molécules à la surface des nanoparticules d'oxyde de silicium. Après avoir exploré différentes hypothèses d'interaction, il a pu être déterminé qu'une réaction chimique se produit lors qu'un groupement de type carboxyle est présent à la surface des particules. Ce groupement réagit avec les fonctions amines primaires des sécrétions. L'interaction chimique a ensuite pu être renforcée par l'utilisation d'un catalyseur, permettant d'accélérer la réaction. Dans la dernière partie du travail, les nanoparticules d'oxyde de silicium ont été comparées à une technique utilisée en routine, la fumigation de cyanoacrylate. Bien que des études plus approfondies soient nécessaires, il s'avère que l'application de nanoparticules d'oxyde de silicium permet une détection de très bonne qualité, moins dépendante du donneur que les techniques courantes. Ces résultats sont prometteurs en vue du développement d'une technique possédant une sensibilité et une sélectivité accrue. - Having situated the background of research and identified key issues of work, different types of nanoparticles and their main features are reviewed. The development of selection criteria lead to the identification of nanoparticles types potentially suitable for fingermarks detection. The study focused then On two families of compounds: quantum dots and silicon oxide nanoparticles. Two types of quantum dots were synthesized and characterised: cadmium telluride and zinc sulphide. Unfortunally, they did not allow the detection realistic fingermarks. Indeed, only fresh and groomed fingermarks have been detected. However, results have been obtained with both types of quantum dots for the detection of fingermarks in blood. After optimization procedures, the quantum dots based teshniques compete with the methods currently used in routine. However, the interaction occurring between fingermarks and nanoparticles could not be determined. Silicon oxide nanoparticles have therefore been applied in order to understand in detail the interactions With fingermarks. These nanoparticles have the advantage of providing a very good surface control, allowing am in-depth study of the phenomena involved. Versatile surface properties were therefore obtained by grafting various molecules on the surface of silicon oxide nanoparticles. Different hypotheses were investigated and it was determined that a chemical reaction occurred between the surface functionalised nanoparticles and the fingermark residues. The carboxyl groups on the surface of the particles react with primary amines of the secretions. Therefore, this interaction was improved by the use of a catalyst. In the last part of the work, silicon oxide nanoparticles were compared to a routinely used technique: cyanocrylate fuming. Although further studies are still needed, it appears that the application of silicon oxide nanoparticles allows fingermark detection of very good quality, with a lowered donor dependency. These results are promising for the development of techniques with greater sensitivity and selectivity.

Pauli distorted double folded potential

The enhancement in the production of even-Z nuclei observed in nuclear fission has also been observed in fragments produced from heavy ion collsions. Beams of 40Ar, 40Cl, and 40Ca at 25 MeV/nucleon were impinged on 58Fe and 58Ni targets. The resulting fragments were detected using the MSU 4pi detector array, which had additional silicon detectors for better isotopic resolution. Comparison of the ratios of yields for each element showed enhancement of even-Z fragment production. The enhancement was more pronounced for reactions with a greater difference in the N/Z of the compound system. However, this effect was less for systems that were more neutron rich. The average N/Z for fragments also displayed an odd-even effect with a lower average N/Z for the even-Z fragments. This is related to the greater availability of neutron-poor isotopes for even-Z nuclei

Modelization of surface diffusion of a molecular dimer

A simple model for a dimer molecular diffusion on a crystalline surface, as a function of temperature, is presented. The dimer is formed by two particles coupled by a quadratic potential. The dimer diffusion is modeled by an overdamped Langevin equation in the presence of a two-dimensional periodic potential. Numerical simulation¿s results exhibit some dynamical properties observed, for example, in Si2 diffusion on a silicon [100] surface. They can be used to predict the value of the effective friction parameter. Comparison between our model and experimental measurements is presented.

Neutron diffraction analysis on FINEMET alloys

Neutron diffraction has been used to study in situ the nanocrystallization process of Fe73.5Cu1Nb3Si22.5-xBx (x = 5, 9, and 12) amorphous alloys. Nanocrystallization results in a decrease of both the silicon content and the grain size of the Fe(Si) phase with increasing value of x. By comparing the radial distribution function peak areas with those predicted for ideal bcc and DO3 structure, it can be concluded that the ordering in DO3 Fe(Si) crystals increases with the silicon content.

Leaf application of silicic acid to white oat and wheat

Silicon (Si) is beneficial to plants in several aspects, but there are doubts about the effectiveness of leaf application. The purpose of this work was to evaluate the effects of Si, applied in a newly developed stabilized silicic acid form to the leaf, on nutrition and yield of irrigated white oat and wheat. Two experiments were performed (one per crop) in winter 2008, in Botucatu-SP, Brazil. A completely randomized block design with 14 replications was used. Treatments consisted of a control (without Si application) and Si leaf spraying, at a rate of 2.0 L ha-1 of the commercial product containing 0.8 % soluble Si. Silicon rate was divided in three parts, i.e. applications at tillering, floral differentiation and booting stages. Silicon leaf application increased N, P, K, and Si concentrations in white oat flag leaf, resulting in higher shoot dry matter, number of panicles per m², number of grains per panicle and grain yield increase of 34 %. In wheat, Si leaf application increased K and Si concentrations, shoot dry matter and number of spikes per m², resulting in a grain yield increase of 26.9 %.

Ellipsometric study of a-Si:H thin films deposited by square wave modulated rf glow discharge

Thin films of hydrogenated amorphous silicon (a‐Si:H), deposited by square wave modulated (SQWM) rf silane discharges, have been studied through spectroscopic and real time phase modulated ellipsometry. The SQMW films obtained at low mean rf power density (19 mW/cm2) have shown smaller surface roughness than those obtained in standard continuous wave (cw) rf discharges. At higher rf powers (≥56 mW/cm2), different behaviors depending on the modulating frequency have been observed. On the one hand, at low modulating frequencies (<40 Hz), the SQWM films have shown a significant increase of porosity and surface roughness as compared to cw samples. On the other, at higher modulating frequencies, the material density and roughness have been found to be similar in SQWM and cw films. Furthermore, the deposition rate of the films show more pronounced increases with the modulating frequency as the rf power is increased. Experimental results are discussed in terms of plasma negative charged species which can be relatively abundant in high rf power discharges and cause significant effects on the deposited layers through polymers, clusters, and powder formation.

Electrical and optical properties of Zn-In-Sn-O transparent conducting thin films

Indium tin oxide (ITO) is one of the widely used transparent conductive oxides (TCO) for application as transparent electrode in thin film silicon solar cells or thin film transistors owing to its low resistivity and high transparency. Nevertheless, indium is a scarce and expensive element and ITO films require high deposition temperature to achieve good electrical and optical properties. On the other hand, although not competing as ITO, doped Zinc Oxide (ZnO) is a promising and cheaper alternative. Therefore, our strategy has been to deposit ITO and ZnO multicomponent thin films at room temperature by radiofrequency (RF) magnetron co-sputtering in order to achieve TCOs with reduced indium content. Thin films of the quaternary system Zn-In-Sn-O (ZITO) with improved electrical and optical properties have been achieved. The samples were deposited by applying different RF powers to ZnO target while keeping a constant RF power to ITO target. This led to ZITO films with zinc content ratio varying between 0 and 67%. The optical, electrical and morphological properties have been thoroughly studied. The film composition was analysed by X-ray Photoelectron Spectroscopy. The films with 17% zinc content ratio showed the lowest resistivity (6.6 × 10 - 4 Ω cm) and the highest transmittance (above 80% in the visible range). Though X-ray Diffraction studies showed amorphous nature for the films, using High Resolution Transmission Electron Microscopy we found that the microstructure of the films consisted of nanometric crystals embedded in a compact amorphous matrix. The effect of post deposition annealing on the films in both reducing and oxidizing atmospheres were studied. The changes were found to strongly depend on the zinc content ratio in the films.