Hillocks and hexagonal pits in a thick film grown by HVPE

A GaN film with a thickness of 250 mu m was grown on a GaN/sapphire template in a vertical hydride vapor phase epitaxy (HVPE) reactor. The full-width at half-maximum (FWHM) values of the film were 141 and 498 arcsec for the (0 0 2) and (1 0 2) reflections, respectively. A sharp band-edge emission with a FWHM of 20 meV at 50 K was observed, which corresponded to good crystalline quality of the film. Some almost circular-shaped hillocks located in the spiral growth center were found on the film surface with dimensions of 100 mu m, whose origin was related to screw dislocations and micropipes. Meanwhile, large hexagonal pits also appeared on the film surface, which had six triangular {1 0 (1) over bar 1} facets. The strong emission in the pits was dominated by an impurity-related emission at 377 nm, which could have been a high-concentration oxygen impurity. (c) 2008 Elsevier Ltd. All rights reserved.

The effect of single AlGaN interlayer on the structural properties of GaN epilayers grown on Si (111) substrates

High-quality and nearly crack-free GaN epitaxial layer was obtained by inserting a single AlGaN interlayer between GaN epilayer and high-temperature AlN buffer layer on Si (111) substrate by metalorganic chemical vapor deposition. This paper investigates the effect of AlGaN interlayer on the structural proper-ties of the resulting GaN epilayer. It confirms from the optical microscopy and Raman scattering spectroscopy that the AlGaN interlayer has a remarkable effect on introducing relative compressive strain to the top GaN layer and preventing the formation of cracks. X-ray diffraction and transmission electron microscopy analysis reveal that a significant reduction in both screw and edge threading dislocations is achieved in GaN epilayer by the insertion of AlGaN interlayer. The process of threading dislocation reduction in both AlGaN interlayer and GaN epilayer is demonstrated.

Effect of the ratio of TMIn flow to group III flow on the properties of InGaN/GaN multiple quantum wells

Triple-axis x-ray diffraction (TXRD) and photoluminescence (PL) spectra are used to assess the influence of the ratio of TMIn flow to group III flow on structural defects, such as dislocations and interface roughness, and optical properties of multiple quantum wells(MQWs). In this paper the mean densities of edge and screw dislocations in InGaN/GaN MQWs are obtained by W scan of every satellite peak of (0002) symmetric and (1012) asymmetric diffractions. At the same time, the interface roughness is measured by the radio of the full width at half maximum of satellite peaks to the peak orders. The experimental results showed that the density of dislocation, especially of edge dislocation, and interface roughness increase with the increase of the ratio, which leads to the decrease of PL properties. It also can be concluded that the edge dislocation acts as nonradiative recombination centers in InGaN/GaN MQWs. Also noticed is that the variation of the ratio has more influence on edge dislocation than on screw dislocation.

The influence of AlN buffer layer thickness on the properties of GaN epilayer

The influence of low-temperature AlN buffer layer thickness on GaN epilayer was investigated by triple-axis X-ray diffraction (XRD) and photoluminescence measurements. A method was proposed to measure the screw and edge dislocation densities by XRD. It was found that the buffer layer thickness was a key parameter to affect the quality of GaN epilayer and an appropriate thickness resulted in the best structural and optical properties except the lateral grain size. After the thickness exceeding the appropriate value, the compressive stress in the epilayer decreased as the thickness increased, which led to the redshift of the near-band edge luminescence. The experimental results showed the buffer layer thickness had more influence on edge dislocation than screw type and the former was perhaps the main source of the yellow band. (C) 2004 Elsevier B.V. All rights reserved.

Effect of trimethylgallium flow on the structural and optical properties of InGaN/GaN multiple quantum wells

InGaN/GaN multiple quantum wells (MQWs) are grown by metal-organic chemical vapour deposition on (0001) sapphire substrates. Triple-axis X-ray diffraction (TXRD) and photoluminescence (PL) spectra are used to assess the influence of trimethylgallium (TMGa) flow on structural defects, such as dislocations and interface roughness, and the optical properties of the MQWs. In this paper, a method, involving an ! scan of every satellite peak of TXRD, is presented to measure the mean dislocation density of InGaN/GaN MQWs. The experimental results show that under certain conditions which keep the trimethlyindium flow constant, dislocation density and interface roughness decrease with the increase of TMGa flow, which will improve the PL properties. It can be concluded that dislocations, especially edge dislocations, act as nonradiative recombination centres in InGaN/GaN MQWs. Also noticed is that changing the TMGa flow has more influence on edge dislocations than screw dislocations.

Influence of dislocations on photoluminescence of InGaN/GaN multiple quantum wells

The influence of dislocations on photoluminescence (PL) of InGaN/GaN multiple quantum wells (MQWs) is investigated by triple-axis x-ray diffraction (TAXRD), transmission electron microscopy (TEM), and PL spectra. The omega scan of every satellite peak by TAXRD is adopted to evaluate the mean screw and edge dislocation densities in MQWs. The results show that dislocations can lead to a reduction of the PL-integrated intensity of InGaN/GaN MQWs under certain conditions, with edge dislocations playing a decisive role. Additionally, the dislocations can broaden the PL peak, but the effect becomes evident only under the condition when the interface roughness is relatively low. (C) 2005 American Institute of Physics.

The influence of AlN/GaN superlattice intermediate layer on the properties of GaN grown on Si(111) substrates

AlN/GaN superlattice buffer is inserted between GaN epitaxial layer and Si substrate before epitaxial growth of GaN layer. High-quality and crack-free GaN epitaxial layers can be obtained by inserting AlN/GaN superlattice buffer layer. The influence of AlN/GaN superlattice buffer layer on the properties of GaN films are investigated in this paper. One of the important roles of the superlattice is to release tensile strain between Si substrate and epilayer. Raman spectra show a substantial decrease of in-plane tensile strain in GaN layers by using AlN/GaN superlattice buffer layer. Moreover, TEM cross-sectional images show that the densities of both screw and edge dislocations are significantly reduced. The GaN films grown on Si with the superlattice buffer also have better surface morphology and optical properties.

Effects of buffer layers on the stress and morphology of GaN epilayer grown on Si substrate by MOCVD

Low temperature (LT) AlN interlayer and insertion of superlattice are two effective methods to reduce crack and defects for GaN grown on Si substrate. In this paper, the influence of two kinds of buffer on stress, morphology and defects of GaN/Si are studied and discussed. The results measured by optical microscope and Raman shift show that insertion of superlattice is more effective than insertion of LT-AlN in preventing the formation of cracks in GaN grown on Si substrate. Cross-sectional TEM images show that the not only screw but edge-type dislocation densities are greatly reduced by using the superlattice buffer. (c) 2006 Elsevier B.V. All rights reserved.

Measurement of threading dislocation densities in GaN by wet chemical etching

We demonstrate a technique based on wet chemical etching that enables quick and accurate evaluation of edge- and screw/mixed-type threading dislocations (TDs) in GaN. Large and small etch pits are formed by phosphoric acid on the etched surfaces. The large etch pits are attributed to screw/mixed TDs and the small ones to edge TDs, according to their locations on the surface and Burgers vectors of TDs. Additionally, the origin of small etch pits is confirmed by a transmission electron microscopy. The difference in the size of etch pits is discussed in view of their origin and merging. Overetching at elevated temperatures or for a long time may result in merging of individual etch pits and underestimating of the density of TDs. Wet chemical etching has also been proved efficient in revealing the distribution of TDs in epitaxial lateral overgrowth GaN.

Defects in GaN films grown on Si(111) substrates by metal-organic chemical vapour deposition

We report the transmission-electron microscopy study of the defects in wurtzitic GaN films grown on Si(111) substrates with AIN buffer layers by the metal-organic chemical vapour deposition method. The In0.1Ga0.9N/GaN multiple quantum well (MQW) reduced the dislocation density by obstructing the mixed and screw dislocations passing through the MQW. No evident reduction of the edge dislocations density by the MQW was observed. It was found that dislocations with screw component can be located at the boundaries of sub-grains slightly in-plane misoriented.

Microstructure of GaN films grown on Si(111) substrates by metalorganic chemical vapor deposition

We report the transmission electron microscopy (TEM) study of the microstructure of wurtzitic GaN films grown on Si(I I I) substrates with AlN buffer layers by metalorganic chemical vapor deposition (MOCVD) method. An amorphous layer was formed at the interface between Si and AlN when thick GaN film was grown. We propose the amorphous layer was induced by the large stress at the interface when thick GaN was grown. The In0.1Ga0.9N/GaN multiple quantum well (MQW) reduced the dislocation density by obstructing the mixed and screw dislocations from passing through the MQW. But no evident reduction of the edge dislocations by the MQW was observed. It was found that dislocations located at the boundaries of grains slightly in-plane misoriented have screw component. Inversion domain is also observed. (C) 2003 Elsevier B.V. All rights reserved.

大型制冷机组的冲洗与调试

大型制冷机组部件众多，管路比较复杂，又是必须承受高压的容器，安装、调试都有严格的要求。以30HXC165A制冷机组的现场冲洗、调试为例，详细介绍了大型制冷机组在试运行之前标准的准备工作。这些工作包括吹扫、试压、排污、充注制冷剂和冲洗调试等全部过程及注意事项。本文为大型螺杆式制冷机组这种压力容器设备的运行和维护管理提供了工程实践经验。结果表明：在施工调试过程中，只有各方互相协调，并且严格按照相关文件和规范要求才能顺利完成制冷机组的安装调试，为以后的正常运行打下基础。

云雾山草原区不同植被恢复阶段土壤团聚体活性有机碳分布特征

以宁夏云雾山草原自然保护区不同植被群落为研究对象,对0～20cm土层土壤团聚体活性有机碳分布特征进行分析。结果表明:(1)不同植被群落土壤团聚体活性有机碳含量顺序为退耕草地<百里香群落<铁杆蒿群落<大针茅群落<长芒草群落,与退耕草地相比,封育草地各粒径团聚体活性有机碳含量均显著提高(P<0.05),表明随着植被的恢复土壤团聚体活性有机碳含量提高并趋于稳定,土壤碳汇效应有可能增强。(2)植被恢复主要影响大团聚体(>0.25mm)中活性有机碳含量,其中0.5～0.25mm粒径团聚体中活性有机碳含量最高,微团聚体(<0.25mm)中活性有机碳含量最低。(3)植被恢复前期(退耕草地-铁杆蒿群落)0～10cm土层>0.5mm粒径团聚体中活性有机碳含量较10～20cm土层有所增加,<0.5mm粒径团聚体活性有机碳含量变化不大,恢复至后期到长芒草阶段时,0～10cm土层<0.5mm粒径团聚体中活性有机碳含量也开始提高,各粒径0～10cm土层团聚体活性有机碳含量均比10～20cm土层有所提高。(4)相关性分析表明,土壤团聚体活性有机碳含量与土壤团聚体总有机碳含量呈极显著线性正相关关系(r=0.9394),团聚体活性有机碳含量...

云雾山不同草地群落土壤活性有机碳分布特征

为探讨黄土高原草地植被演替过程活性有机碳的变化规律,揭示草地退耕后的分布特征,在云雾山草原区采集不同草地群落土壤,采用高锰酸钾氧化法对0~100 cm土层活性有机碳进行分析。结果表明:不同草地群落土壤活性有机碳含量均高于坡耕地,活性有机碳含量大小顺序为:长芒草(Stipa bungeanaTrin.)群落>大针茅(Sti-pa grandisP.Smirn.)群落>铁杆蒿(Artemisia gmeliniiWeb.ex Stechm.)群落>百里香(Thymus mongolicusRonn.)群落>退耕草地>坡耕地,且群落间差异达极显著水平(P<0.01);在恢复初期(坡耕地-退耕草地-百里香)活性有机碳含量增加较多,恢复到长芒草群落活性有机碳含量达到最大值,趋于稳定;活性有机碳的密度与含量表现出相同的变化规律,并随着土层的加深而呈现减小趋势。相关性分析表明,活性有机碳含量与土壤总有机碳含量呈极显著线性正相关关系(r=0.9742),土壤活性有机碳比总有机碳更能反映草地植被恢复初期土壤有机碳库的变化。

慢生型大豆根瘤菌GX201与固氮相关的putA、lrp基因的研究

该研究运用分子生物学方法，克隆并测定了慢生型大豆根瘤菌的putA、lrp基因序列，通过BLAST软件分析发现，lrp基因存在putA基因的上游且转录方向相反.将含有gus报告基因的转座子Tn5gusA5转座到以pLAFR3为载体的重组质粒pGXN300后，利用pLAFR3与pPHIJI质粒的不相容性建立了一套适合于慢生型大豆根瘤菌的转座子诱变体系，应用该体系诱变慢生型大豆根瘤菌GX201，成功地构建了putA、lrp基因的突变体GX20108和GX20120.根据已测定的慢生型大豆根瘤菌的putA、lrp基因序列，设计一对核苷酸引物，PCR扩增putA基因的调控调区，研究lrp基因与putA基因的相互作用机制，离体试验证明putA基因的启动子区存在一个与lrp基因相关蛋白结合区域.