Recent progresses of Si-based photonics in chinese main land

Si-based photonic materials and devices, including SiGe/Si quantum structures, SOI and InGaAs bonded on Si, PL of Si nanocrystals, SOI photonic crystal filter, Si based RCE (Resonant Cavity Enhanced) photodiodes, SOI TO (thermai-optical) switch matrix were investigated in Institute of Serniconductors, Chinese Academy of Sciences. The main results in recent years are presented in the paper. The mechanism of PL from Si NCs embedded in SiO2 matrix was studied, a greater contribution of the interface state recombination (PL peak in 850 similar to 900 nm) is associated with larger Si NCs and higher interface state density. Ge dots with density of order of 10(11) cm(-2) were obtained by UHV/CVD growth and 193 nm excimer laser annealing. SOI photonic crystal filter with resonant wavelength of 1598 nm and Q factor of 1140 was designed and made. Si based hybrid InGaAs RCE PD with eta of 34.4% and FWHM of 27 nut were achieved by MOCVD growth and bonding technology between InGaAs epitaxial and Si wafers. A 16x16 SOI optical switch matrix were designed and made. A new current driving circuit was used to improve the response speed of a 4x4 SOI rearrangeable nonblocking TO switch matrix, rising and failing time is 970 and 750 ns, respectively.

Photoluminescence degradation in GaN induced by light enhanced surface oxidation

The exponential degradation of the photoluminescence (PL) intensity at the near-band-gap was observed in heavily doped or low-quality GaN with pristine surface under continuous helium-cadmium laser excitation. In doped GaN samples, the degradation speed increased with doping concentration. The oxidation of the surface with laser irradiation was confirmed by x-ray photoemission spectroscopy measurements. The oxidation process introduced many oxygen impurities and made an increase of the surface energy band bending implied by the shift of Ga 3d binding energy. The reason for PL degradation may lie in that these defect states act as nonradiative centers and/or the increase of the surface barrier height reduces the probability of radiative recombination.

Studies of high DC current induced degradation in III-V nitride based heterojunctions

We report experiments on high de current stressing in commercial III-V nitride based heterojunction light-emitting diodes. Stressing currents ranging from 100 mA to 200 mA were used. Degradations in the device properties were investigated through detailed studies of the current-voltage (I-V) characteristics, electroluminescence, deep-level transient Fourier spectroscopy and flicker noise. Our experimental data demonstrated significant distortions in the I-V characteristics subsequent to electrical stressing. The room temperature electro-luminescence of the devices exhibited a 25% decrement in the peak emission intensity. Concentration of the deep-levels was examined by deep-level transient Fourier spectroscopy, which indicated an increase in the density of deep-traps from 2.7 x 10(13) cm(-3) to 4.2 x 10(13) cm(-3) at E-1 = E-C - 1.1 eV. The result is consistent with our study of 1/f noise, which exhibited up to three orders of magnitude increase in the voltage noise power spectra. These traps are typically located at energy levels beyond the range that can be characterized by conventional techniques including DLTS. The two experiments, therefore, provide a more complete picture of trap generation due to high dc current stressing.

毛乌素沙区土壤养分对湿地退化的响应

采用湿地生态理论中空间替代时间的研究方法,以毛乌素沙区退化湿地为研究对象,选择距退化湿地水面不同距离,具有不同地下水位埋深的研究区域代表湿地不同退化阶段,通过分析5个不同阶段退化湿地土壤的有机质、全氮、全磷随水平距离的变化特征,研究了土壤养分对湿地退化不同退化程度的响应特征。结果表明,不同退化阶段土壤有机质与全氮剖面均具有一个明显的富集层,既湿地退化前的泥炭沉积层。该沉积层在剖面中所处深度随退化程度的加剧而逐渐增加,且沉积层以上深度的有机质和全氮含量趋于一致。土壤中全磷含量在剖面波动较大,分布特征无明显规律,不同水平距离全磷平均含量无明显变化规律说明湿地退化对全磷含量无明显影响。以上研究结果表明,由于流动沙丘入侵是导致毛乌素沙地湿地退化的首要原因,湿地退化导致土壤有机质和全氮富集层深度逐渐下移,平均含量逐渐下降,而对全磷影响不大。

Photocatalytic degradation of AZO dyes by supported TiO2+UVin aqueous solution

The photocatalytic degradation performance of photocatalysts TiO2 supported on 13-X, Na-Y, 4A zeolites with different loading content was evaluated using the photocatalytic oxidation of dyes direct fast scarlet 4BS and acid red 3B in aqueous medium. The results showed that the best reaction dosage of TiO2-zeolite catalysts is about 2 g/l and the photocatalytic kinetics follows first order for all supported catalysts. The photocatalytic activity order of the three series catalysts is 13X type >Y type >4A type. The physical state of titanium dioxide on the supports is evaluated by X-ray photoelectron spectra (XPS), powder X-ray diffraction (XRD), BET, and FTIR. (C) 2000 Elsevier Science Ltd. All rights reserved.