In0.25Ga0.75As films growth on the thin GaAs/AlAs buffer layer on the GaAs(001) substrate

Thin GaAs/AlAs and GaAs/GaAs buffer layer structure have been fabricated on the GaAs(001) substrate. The top GaAs buffer layer is decoupled from the host substrate by introduction of a low temperature thin interlayer (AlAs or GaAs), which was mechanically behaved like the compliant substrate. Four hundred nanometer In0.25Ga0.75As films were grown on these substrates and the traditional substrate directly. Photoluminescence (PL), double-crystal X-ray diffraction (DCXRD) and atomic force microscopy (AFM) measurements were used to estimate the quality of the In0.25Ga0.75As layer and the compliant effects of the low temperature buffer layer. All the measurements shown that the qualities of epilayer have been improved and the substrate have been deteriorated severely. The growth technique of the thin GaAs/AlAs structure was found to be simple but very powerful for heteroepitaxy. (C) 2003 Elsevier Science B.V All rights reserved.

Content analyses in GaMnAs by double-crystal X-ray diffraction

A model for analyzing point defects in compound crystals was improved. Based on this modified model, a method for measuring Mn content in GaMnAs was established. A technique for eliminating the zero-drift-error was also established in the experiments of X-ray diffraction. With these methods, the Mn content in GaMnAs single crystals fabricated by the ion-beam epitaxy system was analyzed.

Growing process of CdS nanoclusters in zeolite Y studied by positron annihilation

Zeolite Y has been used as the host to generate CdS nanoclusters. The location of CdS nanoclusters inside zeolite hosts was confirmed by the blue-shifted reflection absorption spectra with respect to that of bulk CdS materials. But which kind of cage inside zeolite Y, sodalite cage or supercage, was preferred for the CdS clusters remained unclear. In this paper, we conducted positron annihilation spectroscopy (PAS) measurements for the first time on a series of CdS/Y zeolite samples and concluded that CdS clusters were not located in supercages but in smaller sodalite cages. The stability of CdS clusters inside the sodalite units was due to the coordination of Cd atoms with the framework oxygen atoms of the double six-ring windows. Moreover, PAS revealed some important information of surface states existing on the interfacial layers between CdS clusters and zeolite Y. (C) 2001 Elsevier Science B,V, All rights reserved.

Microstructure of SiOx : H films prepared by plasma enhanced chemical vapor deposition

The micro-Raman spectroscopy and infrared (IR) spectroscopy have been performed for the study of the microstructure of amorphous hydrogenated oxidized silicon (alpha-SiOx,:H) films prepared by Plasma Enhanced Chemical Vapor Deposition technique. It is found that a-SiOx:H consists of two phases: an amorphous silicon-rich phase and an oxygen-rich phase mainly comprised of HSi-SiO2 and HSi-O-3. The Raman scattering; results exhibit that the frequency of TO-like mode of amorphous silicon red-shifts with decreasing size of silicon-rich region. This is related to the quantum confinement effects, similar to the nanocrystalline silicon.

High-quality-factor EH modes in microcylinder resonators predicted by 3D FDTD simulation

The mode characteristis of a microcylinders with center layer thickness 0.2 mu m and radius 1 mu m are investigated by the three-dimensional (31)) finite-difference time-domain (FDTD) technique and the Pade approximation. The mode quality factor (Q-factor) of the EH71 mode obtained by 3D FDTD increase with the increase of the refractive index of the cladding layer n(2) as n(2) smaller than 3.17, and can be as large as 2.4 x 10(4) as the vertical refractive index distribution is 3.17/3.4/3.17, which is much larger than that of the HE71 mode with the same vertical refractive index distribution.

InN layers grown by MOCVD on SrTiO3 substrates

Epitaxial wurtzite InN thin films have been grown by metal-organic chemical vapor deposition on (1 1 1) SrTiO3 (STO) substrates. Interestingly, twin domain epitaxy induced by the surface reconstruction of STO is observed with the in-plane orientation relationships of [(1) over bar 1 0 0]InN parallel to [<(1)over bar > 1 0]STO and [2 <(1 1)over bar > 0]InN parallel to[<(1)over bar > 1 0]STO, which is helpful to release the strain. The InN films on STO substrates exhibit a strong photoluminescence emission around 0.78 eV. Particularly, using STO substrates opens up a possibility to integrate InN with the functional oxides. (C) 2009 Elsevier B.V. All rights reserved

Substrate temperature dependence of ZnTe epilayers grown on GaAs(001) by molecular beam epitaxy

ZnTe thin films have been grown on GaAs(0 0 1) substrates at different temperatures with constant Zn and Te beam equivalent pressures (BEPs) by molecular beam epitaxy (MBE). In situ reflection high-energy electron diffraction (RHEED) observation indicates that two-dimensional (2D) growth mode can be established after around one-minute three-dimensional (3D) nucleation by increasing the substrate temperature to 340 degrees C. We found that Zn desorption from the ZnTe surface is much greater than that of Te at higher temperatures, and estimated the Zn sticking coefficient by the evolution of growth rate. The Zn sticking coefficient decreases from 0.93 to 0.58 as the temperature is elevated from 320 to 400 degrees C. The ZnTe epilayer grown at 360 degrees C displays the narrowest full-width at half-maximum (FWHM) of 660 arcsec from (0 0 4) reflection in double-crystal X-ray rocking curve (DCXRC) measurements. The surface morphology of ZnTe epilayers is strongly dependent on the substrate temperature, and the root-mean-square (RMS) roughness diminishes drastically with the increase in temperature.

高效DOM实现的技术研究

DOM是目前为止唯一成为W3C正式标准的XML解析模型。本文充分考虑了DOM模型的特点,设计并实现了一个高性能的支持DOM的XML解析器OnceDOMParser。为了提高DOM实现的性能,我们采用用户堆提高对象管理的效率,减少对象在JVM中创建的数量,并采取了数据的延迟装载策略。OnceDOMParser经过了严格的XML兼容性测试和DOM API兼容性测试,多方面的性能测试表明OnceDOMParser性能优越,其平均吞吐量比目前最流行的XML解析器Xerces高43.7%左右。

MPI同步通信顺序模型死锁静态检测算法

静态检测MPI程序同步通信死锁比较困难,通常需要建立程序模型.顺序模型是其他所有复杂模型的基础.通过一种映射方法将顺序模型转化为字符串集合,将死锁检测问题转化为等价的多队列字符申匹配问题,从而设计并实现了一种MPI同步通信顺序模型的静态死锁检测算法.该算法的性能优于通常的环检测方法,并能适应动态消息流.

research on user-centered design and recognition pen gestures

Pen-based user interface has become a hot research field in recent years. Pen gesture plays an important role in Pen-based user interfaces. But it’s difficult for UI designers to design, and for users to learn and use. In this purpose, we performed a research on user-centered design and recognition pen gestures. We performed a survey of 100 pen gestures in twelve famous pen-bases systems to find problems of pen gestures currently used. And we conducted a questionnaire to evaluate the matching degree between commands and pen gestures to discover the characteristics that a good pen gestures should have. Then cognition theories were applied to analyze the advantages of those characteristics in helping improving the learnability of pen gestures. From these, we analyzed the pen gesture recognition effect and presented some improvements on features selection in recognition algorithm of pen gestures. Finally we used a couple of psychology experiments to evaluate twelve pen gestures designed based on the research. It shows those gestures is better for user to learn and use. Research results of this paper can be used for designer as a primary principle to design pen gestures in pen-based systems.

笔式界面软件资源管理模型及其实现

针对目前文档管理模式和WIMP界面交互范式对笔式交互的不足,提出了笔式界面软件文档资源管理的统一模型,能够有效地管理笔式界面软件所产生的文档数据,并且根据此模型实现了笔式界面的文档资源管理系统,采用了PIBG交互范式和实物界面.评估结果表明,根据此模型设计的系统,能够提高用户工作效率,降低用户的认知负担.