Fecundidad deseada y no deseada en América Latina, con particular referencia a algunos aspectos de género

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Políticas sobre desarrollo institucional e innovación en biocombustibles en América Latina y el Caribe: Memoria del diálogo de políticas realizado en la CEPAL, Santiago, el 28 y 29 de marzo de 2011

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Agricultura y cambio climático: nuevas tecnologías en la mitigación y adaptación de la agricultura al cambio climático . Memoria del tercer seminario regional de agricultura y cambio climático, realizado en Santiago, 27 y 28 de septiembre de 2012

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Decay of photo-induced conductivity in Sb-doped SnO2 thin films, using monochromatic light of about bandgap energy

Doping tin dioxide (SnO2) with pentavalent Sb5+ ions leads to an enhancement in the electrical conductivity of this material, because Sb5+ substitutes Sn4+ in the matrix, promoting an electronic density increase in the conduction band, due to the donor-like nature of the doping atom. Results of computational simulation, based on the Density Functional Theory (DFT), of SnO2:4%Sb and SnO2:8%Sb show that the bandgap magnitude is strongly affected by the doping concentration, because the energy value found for 4 at%Sb and 8 at%Sb was 3.27 eV and 3.13 eV, respectively, whereas the well known value for undoped SnO2 is about 3.6 eV. Sb-doped SnO2 thin films were obtained by the sol-gel-dip-coating technique. The samples were submitted to excitation with below theoretical bandgap light (450 nm), as well as above bandgap light (266 nm) at low temperature, and a temperature-dependent increase in the conductivity is observed. Besides, an unusual temperature and time dependent decay when the illumination is removed is also observed, where the decay time is slower for higher temperatures. This decay is modeled by considering thermally activated cross section of trapping centers, and the hypothesis of grain boundary scattering as the dominant mechanism for electronic mobility. © 2012 Elsevier B.V. All rights reserved.

Interface formation of nanostructured heterojunction SnO 2:Eu/GaAs and electronic transport properties

Thin films of tin dioxide (SnO2) are deposited by the sol-gel-dip-coating technique, along with GaAs layers, deposited by the resistive evaporation technique. The as-built heterojunction has potential application in optoelectronic devices, combining the emission from the rare-earth doped transparent oxide (Eu3+-doped SnO2 presents very efficient red emission) with a high mobility semiconductor. The advantage of this structure is the possibility of separation of the rare-earth emission centers from the electron scattering, leading to a strongly indicated combination for electroluminescence. Electrical characterization of the heterojunction SnO2:Eu/GaAs shows a significant conductivity increase when compared to the conductivity of the individual films, and the monochromatic light irradiation (266 nm) at low temperature of the heterojunction GaAs/SnO2:Eu leads to intense conductivity increase. Scanning electron microscopy (SEM) of the heterojunction cross section shows high adherence and good morphological quality of the interfaces substrate/SnO2 and SnO2/GaAs, even though the atomic force microscopy (AFM) image of the GaAs surface shows disordered particles, which increases with sample thickness. On the other hand, the good morphology of the SnO2:Eu surface, shown by AFM, assures the good electrical performance of the heterojunction. The observed improvement on the electrical transport properties is probably related to the formation of short conduction channels at the semiconductors interface, which may exhibit two-dimensional electron gas (2DEG) behavior. © 2012 Elsevier B.V. All rights reserved.

Acta resumida de la 69a sesión celebrada La Paz el martes 28 de mayo de 1957 a las 16.55 horas

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Influência da combinação de dados GPS e GLONASS no georreferenciamento de imóveis rurais

The land question has been a widely discussed topic in Brazil, regarding land tenure. Law No. 10.267/01 was a major breakthrough for the agrarian issue. Since then on all rural properties must be georeferenced to the Brazilian Geodetic System (BGS). Therefore, satellite positioning and conventional methods are extensively used. Changes have been occurring in satellite positioning systems due to the addition of new signals in GPS (Global System Positioning), restructuring of GLONASS (Global Orbiting Navigation Satellite System), and the new systems like Galileo and Compass as well. To evaluate the effects of combining GPS and GLONASS data, several batches of processings were performed on different configurations. The data processing was performed to determine the coordinates of points of basic support and those materializing the neighborhood of the rural properties. As a result, it was found that the use of accurate ephemeris in transporting coordinates to support points has no significant influence, since transportation with broadcast ephemeris also meets the accuracy requirements for the Standard Technique for Georreferencing Rural Properties. On the other hand, when GPS and GLONASS data were used, such combination provides the best results. In the case of neighboring points, the use of GPS and GLONASS data is also recommended because such data meet the precision requirement and showed better results than those from where data were processed separately.

Summary Record of the Sixty-Ninth Meeting Held at La Paz on Tuesday, 28 May 1957, at 4.55 p.m.

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