Strength of tantalum at high pressures through Richtmyer-Meshkov laser compression experiments and simulations

Strength at extreme pressures (>1 Mbar or 100 GPa) and high strain rates (106-108 s-1) of materials is not well characterized. The goal of the research outlined in this thesis is to study the strength of tantalum (Ta) at these conditions. The Omega Laser in the Laboratory for Laser Energetics in Rochester, New York is used to create such extreme conditions. Targets are designed with ripples or waves on the surface, and these samples are subjected to high pressures using Omega’s high energy laser beams. In these experiments, the observational parameter is the Richtmyer-Meshkov (RM) instability in the form of ripple growth on single-mode ripples. The experimental platform used for these experiments is the “ride-along” laser compression recovery experiments, which provide a way to recover the specimens having been subjected to high pressures. Six different experiments are performed on the Omega laser using single-mode tantalum targets at different laser energies. The energy indicates the amount of laser energy that impinges the target. For each target, values for growth factor are obtained by comparing the profile of ripples before and after the experiment. With increasing energy, the growth factor increased.

Engineering simulations are used to interpret and correlate the measurements of growth factor to a measure of strength. In order to validate the engineering constitutive model for tantalum, a series of simulations are performed using the code Eureka, based on the Optimal Transportation Meshfree (OTM) method. Two different configurations are studied in the simulations: RM instabilities in single and multimode ripples. Six different simulations are performed for the single ripple configuration of the RM instability experiment, with drives corresponding to laser energies used in the experiments. Each successive simulation is performed at higher drive energy, and it is observed that with increasing energy, the growth factor increases. Overall, there is favorable agreement between the data from the simulations and the experiments. The peak growth factors from the simulations and the experiments are within 10% agreement. For the multimode simulations, the goal is to assist in the design of the laser driven experiments using the Omega laser. A series of three-mode and four-mode patterns are simulated at various energies and the resulting growth of the RM instability is computed. Based on the results of the simulations, a configuration is selected for the multimode experiments. These simulations also serve as validation for the constitutive model and the material parameters for tantalum that are used in the simulations.

By designing samples with initial perturbations in the form of single-mode and multimode ripples and subjecting these samples to high pressures, the Richtmyer-Meshkov instability is investigated in both laser compression experiments and simulations. By correlating the growth of these ripples to measures of strength, a better understanding of the strength of tantalum at high pressures is achieved.

Injection Locked Clocking and Transmitter Equalization Techniques for Chip to Chip Interconnects

Semiconductor technology scaling has enabled drastic growth in the computational capacity of integrated circuits (ICs). This constant growth drives an increasing demand for high bandwidth communication between ICs. Electrical channel bandwidth has not been able to keep up with this demand, making I/O link design more challenging. Interconnects which employ optical channels have negligible frequency dependent loss and provide a potential solution to this I/O bandwidth problem. Apart from the type of channel, efficient high-speed communication also relies on generation and distribution of multi-phase, high-speed, and high-quality clock signals. In the multi-gigahertz frequency range, conventional clocking techniques have encountered several design challenges in terms of power consumption, skew and jitter. Injection-locking is a promising technique to address these design challenges for gigahertz clocking. However, its small locking range has been a major contributor in preventing its ubiquitous acceptance.

In the first part of this dissertation we describe a wideband injection locking scheme in an LC oscillator. Phase locked loop (PLL) and injection locking elements are combined symbiotically to achieve wide locking range while retaining the simplicity of the latter. This method does not require a phase frequency detector or a loop filter to achieve phase lock. A mathematical analysis of the system is presented and the expression for new locking range is derived. A locking range of 13.4 GHz–17.2 GHz (25%) and an average jitter tracking bandwidth of up to 400 MHz are measured in a high-Q LC oscillator. This architecture is used to generate quadrature phases from a single clock without any frequency division. It also provides high frequency jitter filtering while retaining the low frequency correlated jitter essential for forwarded clock receivers.

To improve the locking range of an injection locked ring oscillator; QLL (Quadrature locked loop) is introduced. The inherent dynamics of injection locked quadrature ring oscillator are used to improve its locking range from 5% (7-7.4GHz) to 90% (4-11GHz). The QLL is used to generate accurate clock phases for a four channel optical receiver using a forwarded clock at quarter-rate. The QLL drives an injection locked oscillator (ILO) at each channel without any repeaters for local quadrature clock generation. Each local ILO has deskew capability for phase alignment. The optical-receiver uses the inherent frequency to voltage conversion provided by the QLL to dynamically body bias its devices. A wide locking range of the QLL helps to achieve a reliable data-rate of 16-32Gb/s and adaptive body biasing aids in maintaining an ultra-low power consumption of 153pJ/bit.

From the optical receiver we move on to discussing a non-linear equalization technique for a vertical-cavity surface-emitting laser (VCSEL) based optical transmitter, to enable low-power, high-speed optical transmission. A non-linear time domain optical model of the VCSEL is built and evaluated for accuracy. The modelling shows that, while conventional FIR-based pre-emphasis works well for LTI electrical channels, it is not optimum for the non-linear optical frequency response of the VCSEL. Based on the simulations of the model an optimum equalization methodology is derived. The equalization technique is used to achieve a data-rate of 20Gb/s with power efficiency of 0.77pJ/bit.

大功率半导体激光器阵列的封装技术

半导体激光器阵列的应用已基本覆盖了整个光电子领域，成为当今光电子科学的重要技术。本文介绍了半导体激光器阵列的发展及其应用。着重阐述了半导体激光器阵列的封装技术——热沉材料的选择及其结构优化、热沉与半导体激光器阵列之间的焊接技术、半导体激光器阵列的冷却技术、与光纤的耦合技术等。

Wavefront measurement of double-clad pulsed ytterbium fiber laser

Because of high efficiencies, compact structure, and excellent heat dissipation, high-power fiber lasers are extremely useful for applications such as cutting, welding, precision drilling, trimming, sensing, optical transmitter, material processing, micromachining, and so on. However, the wavefront of the double clad fiber laser doped with ytterbium is still unknown. In this paper, wavefront of a fiber laser is measured and the traditional Hartmann-shack wavefront sensing method is adopted. We measured a double clad fiber laser doped with ytterbium which produces pulse wave output at infrared wavelength. The wavefront shape and contour are reconstructed and the result shows that wavefront is slightly focused and not an ideal plane wavefront. Wavefront measurement of fiber laser will be useful to improving the lasers' performance and developing the coherent technique for its applications.

Paths Towards High Efficiency Silicon Photovoltaics

While photovoltaics hold much promise as a sustainable electricity source, continued cost reduction is necessary to continue the current growth in deployment. A promising path to continuing to reduce total system cost is by increasing device efficiency. This thesis explores several silicon-based photovoltaic technologies with the potential to reach high power conversion efficiencies. Silicon microwire arrays, formed by joining millions of micron diameter wires together, were developed as a low cost, low efficiency solar technology. The feasibility of transitioning this to a high efficiency technology was explored. In order to achieve high efficiency, high quality silicon material must be used. Lifetimes and diffusion lengths in these wires were measured and the action of various surface passivation treatments studied. While long lifetimes were not achieved, strong inversion at the silicon / hydrofluoric acid interface was measured, which is important for understanding a common measurement used in solar materials characterization.

Cryogenic deep reactive ion etching was then explored as a method for fabricating high quality wires and improved lifetimes were measured. As another way to reach high efficiency, growth of silicon-germanium alloy wires was explored as a substrate for a III-V on Si tandem device. Patterned arrays of wires with up to 12% germanium incorporation were grown. This alloy is more closely lattice matched to GaP than silicon and allows for improvements in III-V integration on silicon.

Heterojunctions of silicon are another promising path towards achieving high efficiency devices. The GaP/Si heterointerface and properties of GaP grown on silicon were studied. Additionally, a substrate removal process was developed which allows the formation of high quality free standing GaP films and has wide applications in the field of optics.

Finally, the effect of defects at the interface of the amorphous silicon heterojuction cell was studied. Excellent voltages, and thus efficiencies, are achievable with this system, but the voltage is very sensitive to growth conditions. We directly measured lateral transport lengths at the heterointerface on the order of tens to hundreds of microns, which allows carriers to travel towards any defects that are present and recombine. This measurement adds to the understanding of these types of high efficiency devices and may aid in future device design.

梯度补偿法控温晶体的高功率绿光激光器

研究了平均功率超过30 W的稳定高效全固态绿光激光器,分析得出影响全固态腔内倍频激光器倍频效率和输出稳定性的主要因素是倍频晶体局部温升造成的相位失配和热透镜效应,采用温度梯度补偿控温法对大尺寸倍频晶体进行温度控制,降低激光器工作中倍频晶体内外温度梯度从而有效地克服因晶体局部温升造成的倍频相位匹配角失配和热透镜效应。采用三条60 W的半导体激光二极管阵列板条侧面抽运Nd:YAG激光增益介质棒,采用声光调Q,平凹直腔和腔内倍频结构配合温度梯度补偿控温法对大尺寸倍频晶体进行温度控制,得到了稳定高效的532 nm

板条热容激光器的二维热特性

固体热容激光器（SSHCL）作为高功率固体激光器的一个重要发展方向,引起人们广泛关注。数值模拟激光介质板条在热容方式下工作的温度和应力分布是了解该类激光器工作特性的一种有效手段,采用平面应力近似法导出了半导体激光器抽运热容激光介质板的二维温度和应力分布公式,同时也对二维抽运光吸收密度、介质板温度分布和折射率变化进行了分析与讨论。数值计算的结果表明二维效应的温度分布和应力分布要比一维效应给出的分布更均匀。

输出高重复频率脉冲列的全固态激光器

报道了利用声光振幅调制锁模的方法，在激光二极管端面抽运Nd：YVO4激光器上获得320MHz高重复频率脉冲列的实验结果。实验采用平一平腔结构，腔长452mm，耦合输出镜透过率为3．6％。所用声光介质为熔融石英晶体，以铌酸锂作换能器，在驱动功率4．5W时，对1064nm波长衍射效率为50，相应的调制深度为0．31。在最佳锁模状态下，激光二极管抽运功率为3．5W，此时激光平均输出功率为15mw。示波器记录脉冲宽度680ps，实测光束质量因子M^2小于1．5。并在实验基础上对激光器工作的稳定性进行了分析，结果表

激光二极管侧面抽运调Q倍频Nd:YAG激光器

对高平均功率输出的激光二极管侧面抽运电光调Q倍频 Nd:YAG激光器进行了研究，当采用90个60W的脉冲激光二极管阵列抽运时，在重复频率为10Hz下，实现了最大平均功率为1180mW的1064nm红外激光输出，光-光转换效率为11%。腔外倍频获得600mW的532nm绿光输出，倍频效率达到50%以上。

A planar waveguide Nd : YAG laser using active Q-switching of a hybrid unstable resonator

A planar waveguide laser operating in a negative branch unstable resonator is Q-switched by an acoustooptic mod latorin anew configuration, providing effective, high-speed switching. The laser using a 200-mu m Nd:YAG core, face pumped by 10 laser diode bars, has produced 100-W output in a good beam quality at 100-kHz pulse rate, and 4.5 mJ at lower frequency with 15-ns pulse duration.

热畸变对单板条热容激光器输出的影响

开展了激光二极管(LD)抽运的全固态热容激光器的理论与实验研究, 数值模拟了在热容工作条件下侧面抽运的Nd:YAG板条激光器的热透镜效应, 分析了热透镜效应对激光输出的影响, 并进行了相应的实验论证。实验中采用的晶体尺寸为57 mm×40 mm×4 mm, 激光二极管阵列的抽运峰值功率为12 kW, 重复频率为1 kHz, 占空比为20%, 为了获得较高的增益, 将抽运光通过光学系统进行聚焦, 抽运光在晶体侧面的光斑大小为15 mm×57 mm。实验中观察了1 s内的脉冲能量输出的波动情况, 在开始工作的

高重复频率、窄脉宽全固态光纤放大器种子源

高重复频率、窄脉宽的全固态激光器种子源级联光纤放大器是获得高功率脉冲激光输出的有效手段.短上能态寿命的Nd∶YVO4晶体在连续抽运、高重复频率Q开关工作时容易得到接近连续性能的平均输出功率.理论分析了声光(AO)调Q器件中影响输出能量和脉宽大小的主要因素,优化配置了腔型参数.利用激光二极管(LD)光纤耦合模块端面抽运Nd∶YVO4晶体,实现了声-光调Q重复频率100 kHz以上,脉宽20 ns以下,波长1064 nm的激光输出.在抽运功率5.7 W时,得到了脉宽15.3 ns,重复频率150 kHz的种子光输出,在级联单级光纤放大器后,得到了20 W的输出.

两微米瓦级掺铥短光纤激光器

以短的高掺杂浓度的掺铥硅基光纤为增益介质，采用790 nm波长的激光二极管(LD)为抽运源，得到了波长为2 μm的高功率激光输出。当光纤长度为7 cm时，激光器的阈值泵浦功率为135 mW，最大输出功率为1.09 W，斜率效率为9.6%(相对于耦合进光纤的抽运功率)。该激光器的输出稳定性在5%以内。此外，我们还观察分析了工作温度和其他腔结构参量对该激光器工作性能的影响。

瓦级双包层光纤超荧光光源的实验研究

采用大功率半导体激光器抽运25m掺Yb双包层光纤，在单程装置中，前向(SPF)和后向(SPB)分别获得了1．46w和1．82w最大超荧光功率，斜度效率分别为23．4％0和29．2％，3dB带宽最大为11nm。采用特定范围波长双色镜作为前腔镜，形成双程前向(DPF)装置，获得最大超荧光输出功率2．12W，此时斜度效率为43．2％，中心波长在1070nm，输出光谱平坦性较好，3dB带宽从单程的11nm提高到42nm。

Compact continuous-wave blue lasers by direct frequency doubling of laser diodes with periodically poled lithium niobate waveguide crystals

A compact continuous-wave blue laser has been demonstrated by direct frequency doubling of a laser diode with a periodically poled lithium niobate (PPLN) waveguide crystal. The optimum PPLN temperature is near 28 degreesC, and the dependence of waveguide crystals on crystal temperature is less sensitive than that of bulk crystals. A total of 14.8 mW of 488-nm laser power has been achieved. (C) 2005 Optical Society of America.