I. Electronic processes in α-sulfur. II. Polaron motion in a D.C. electric field

Part I: The mobilities of photo-generated electrons and holes in orthorhombic sulfur are determined by drift mobility techniques. At room temperature electron mobilities between 0.4 cm²/V-sec and 4.8 cm²/V-sec and hole mobilities of about 5.0 cm²/V-sec are reported. The temperature dependence of the electron mobility is attributed to a level of traps whose effective depth is about 0.12 eV. This value is further supported by both the voltage dependence of the space-charge-limited, D.C. photocurrents and the photocurrent versus photon energy measurements.

As the field is increased from 10 kV/cm to 30 kV/cm a second mechanism for electron transport becomes appreciable and eventually dominates. Evidence that this is due to impurity band conduction at an appreciably lower mobility (4.10^-4 cm²/V-sec) is presented. No low mobility hole current could be detected. When fields exceeding 30 kV/cm for electron transport and 35 kV/cm for hole transport are applied, avalanche phenomena are observed. The results obtained are consistent with recent energy gap studies in sulfur.

The theory of the transport of photo-generated carriers is modified to include the case of appreciable thermos-regeneration from the traps in one transit time.

Part II: An explicit formula for the electric field E necessary to accelerate an electron to a steady-state velocity v in a polarizable crystal at arbitrary temperature is determined via two methods utilizing Feynman Path Integrals. No approximation is made regarding the magnitude of the velocity or the strength of the field. However, the actual electron-lattice Coulombic interaction is approximated by a distribution of harmonic oscillator potentials. One may be able to find the “best possible” distribution of oscillators using a variational principle, but we have not been able to find the expected criterion. However, our result is relatively insensitive to the actual distribution of oscillators used, and our E-v relationship exhibits the physical behavior expected for the polaron. Threshold fields for ejecting the electron for the polaron state are calculated for several substances using numerical results for a simple oscillator distribution.

π+ photoproduction at angles from 6° to 90° C.M. and energies from 589 to 1269 MeV

The differential cross section for the reaction γp → π⁺n was measured at 32 laboratory photon energies between 589 and 1269 MeV at the Caltech Synchrotron. At each energy, data have been obtained at typically fifteen π⁺ c.m. angles between 6° and 90°. A magnetic spectrometer was used to detect the π⁺ photo-produced in a liquid hydrogen target. Two Cherenkov counters were used to reject the background of positrons and protons. The data clearly show the presence of a pole in the production amplitude due to the one pion exchange. Moravcsik fits to the 32 angular distributions, including data from another experiment, are presented. The extrapolation of these fits to the pole gives a value for the pion-nucleon coupling constant of 14.5 which is consistent with the accepted value. The second and third pion-nucleon resonances are evident as peaks in the total cross section and as changes in the shape of the angular distributions. At the third resonance there is evidence for both a D5/2 and an F5/2 amplitude. The absence of large variations in the 0° and 180° cross sections implies that the second and third resonances are mostly produced from an initial state with helicity ± 3/2.

Photoproduction of charged pion pairs from hydrogen at energies up to 1500 MeV

Charged pion pair photoproduction has been investigated up to a gamma energy of 1500 MeV, using the Caltech 12-inch heavy liquid bubble chamber with a small diameter, high intensity photon beam passing through a central beam tube gaseous hydrogen target surrounded by the sensitive Freon. Scanning, analysis, and data reduction techniques have been developed to deal with the problems of two-vie stereo, hidden event origins, absence of magnetic field, and the range-energy and multiple scattering relationships that occur in the heavy materials. Roughly 5700 pictures have been scanned and analyzed, yielding 754 acceptable events. Cross section and parameter distributions are generally consistent with the results of previous experiments. A statistically insignificant “bump” was observed in the dipion mass spectrum in the region of 500 MeV, the disputed σ meson mass. This region was investigated as carefully as the limited statistics would allow; dipion angular distributions are consistent with isotropy, and there is indication that some of the events in this region might come from decay of an intermediate N*₁₁ (1425) into a proton and dipion.

Photographic materials on pp. 18, 20, 22, and 24 are essential and will not reproduce clearly on Xerox copies. Photographic copies should be ordered.

Spontaneous and stimulated light emission due to radiative recombination in forward biased lead telluride P-N junctions

Since the discovery in 1962 of laser action in semiconductor diodes made from GaAs, the study of spontaneous and stimulated light emission from semiconductors has become an exciting new field of semiconductor physics and quantum electronics combined. Included in the limited number of direct-gap semiconductor materials suitable for laser action are the members of the lead salt family, i.e . PbS, PbSe and PbTe. The material used for the experiments described herein is PbTe . The semiconductor PbTe is a narrow band- gap material (E_g = 0.19 electron volt at a temperature of 4.2°K). Therefore, the radiative recombination of electron-hole pairs between the conduction and valence bands produces photons whose wavelength is in the infrared (λ ≈ 6.5 microns in air).

The p-n junction diode is a convenient device in which the spontaneous and stimulated emission of light can be achieved via current flow in the forward-bias direction. Consequently, the experimental devices consist of a group of PbTe p-n junction diodes made from p –type single crystal bulk material. The p - n junctions were formed by an n-type vapor- phase diffusion perpendicular to the (100) plane, with a junction depth of approximately 75 microns. Opposite ends of the diode structure were cleaved to give parallel reflectors, thereby forming the Fabry-Perot cavity needed for a laser oscillator. Since the emission of light originates from the recombination of injected current carriers, the nature of the radiation depends on the injection mechanism.

The total intensity of the light emitted from the PbTe diodes was observed over a current range of three to four orders of magnitude. At the low current levels, the light intensity data were correlated with data obtained on the electrical characteristics of the diodes. In the low current region (region A), the light intensity, current-voltage and capacitance-voltage data are consistent with the model for photon-assisted tunneling. As the current is increased, the light intensity data indicate the occurrence of a change in the current injection mechanism from photon-assisted tunneling (region A) to thermionic emission (region B). With the further increase of the injection level, the photon-field due to light emission in the diode builds up to the point where stimulated emission (oscillation) occurs. The threshold current at which oscillation begins marks the beginning of a region (region C) where the total light intensity increases very rapidly with the increase in current. This rapid increase in intensity is accompanied by an increase in the number of narrow-band oscillating modes. As the photon density in the cavity continues to increase with the injection level, the intensity gradually enters a region of linear dependence on current (region D), i.e. a region of constant (differential) quantum efficiency.

Data obtained from measurements of the stimulated-mode light-intensity profile and the far-field diffraction pattern (both in the direction perpendicular to the junction-plane) indicate that the active region of high gain (i.e. the region where a population inversion exists) extends to approximately a diffusion length on both sides of the junction. The data also indicate that the confinement of the oscillating modes within the diode cavity is due to a variation in the real part of the dielectric constant, caused by the gain in the medium. A value of τ ≈ 10^-9 second for the minority- carrier recombination lifetime (at a diode temperature of 20.4°K) is obtained from the above measurements. This value for τ is consistent with other data obtained independently for PbTe crystals.

Data on the threshold current for stimulated emission (for a diode temperature of 20. 4°K) as a function of the reciprocal cavity length were obtained. These data yield a value of J’_th = (400 ± 80) amp/cm² for the threshold current in the limit of an infinitely long diode-cavity. A value of α = (30 ± 15) cm^-1 is obtained for the total (bulk) cavity loss constant, in general agreement with independent measurements of free- carrier absorption in PbTe. In addition, the data provide a value of n_s ≈ 10% for the internal spontaneous quantum efficiency. The above value for n_s yields values of t_b ≈ τ ≈ 10^-9 second and t_s ≈ 10^-8 second for the nonradiative and the spontaneous (radiative) lifetimes, respectively.

The external quantum efficiency (n_d) for stimulated emission from diode J-2 (at 20.4° K) was calculated by using the total light intensity vs. diode current data, plus accepted values for the material parameters of the mercury- doped germanium detector used for the measurements. The resulting value is n_d ≈ 10%-20% for emission from both ends of the cavity. The corresponding radiative power output (at λ = 6.5 micron) is 120-240 milliwatts for a diode current of 6 amps.

Upconversion and fluorescence spectral studies of Er3+/Yb3+-codoped Bi(2)Q(3)-GeO2-Ga(2)Q(3)-Na2O glasses

The absorption spectra and upconversion fluorescence spectra of Er3+/-Yb3+-codoped natrium-gallium-germanium-bismuth glasses are measured and investigated. The intense green (533 and 549 nm) and red (672 nm) emission bands were simultaneously observed at room temperature. The quadratic dependence of the green and red emission on excitation power indicates that the two-photon absorption processes occur. The influence of Ga2C3 on upconversion intensity is investigated. The intensity of green emissions increases slowly with increasing Ga2O3 content, while the intensity of red emission increases significantly. The possible upconversion mechanisms for these glasses have also been discussed. The maximum phonon energy of the glasses determined based on the infrared (IR) spectral analysis is as low as 740 cm(-1). The studies indicate that Bi2O3-GeO2-Ga2O3-Na2O glasses may be potential materials for developing upconversion optical devices (c) 2006 Published by Elsevier B.V.

Advanced Monte Carlo Simulation and Machine Learning for Frequency Domain Optical Coherence Tomography

Optical Coherence Tomography(OCT) is a popular, rapidly growing imaging technique with an increasing number of bio-medical applications due to its noninvasive nature. However, there are three major challenges in understanding and improving an OCT system: (1) Obtaining an OCT image is not easy. It either takes a real medical experiment or requires days of computer simulation. Without much data, it is difficult to study the physical processes underlying OCT imaging of different objects simply because there aren't many imaged objects. (2) Interpretation of an OCT image is also hard. This challenge is more profound than it appears. For instance, it would require a trained expert to tell from an OCT image of human skin whether there is a lesion or not. This is expensive in its own right, but even the expert cannot be sure about the exact size of the lesion or the width of the various skin layers. The take-away message is that analyzing an OCT image even from a high level would usually require a trained expert, and pixel-level interpretation is simply unrealistic. The reason is simple: we have OCT images but not their underlying ground-truth structure, so there is nothing to learn from. (3) The imaging depth of OCT is very limited (millimeter or sub-millimeter on human tissues). While OCT utilizes infrared light for illumination to stay noninvasive, the downside of this is that photons at such long wavelengths can only penetrate a limited depth into the tissue before getting back-scattered. To image a particular region of a tissue, photons first need to reach that region. As a result, OCT signals from deeper regions of the tissue are both weak (since few photons reached there) and distorted (due to multiple scatterings of the contributing photons). This fact alone makes OCT images very hard to interpret.

This thesis addresses the above challenges by successfully developing an advanced Monte Carlo simulation platform which is 10000 times faster than the state-of-the-art simulator in the literature, bringing down the simulation time from 360 hours to a single minute. This powerful simulation tool not only enables us to efficiently generate as many OCT images of objects with arbitrary structure and shape as we want on a common desktop computer, but it also provides us the underlying ground-truth of the simulated images at the same time because we dictate them at the beginning of the simulation. This is one of the key contributions of this thesis. What allows us to build such a powerful simulation tool includes a thorough understanding of the signal formation process, clever implementation of the importance sampling/photon splitting procedure, efficient use of a voxel-based mesh system in determining photon-mesh interception, and a parallel computation of different A-scans that consist a full OCT image, among other programming and mathematical tricks, which will be explained in detail later in the thesis.

Next we aim at the inverse problem: given an OCT image, predict/reconstruct its ground-truth structure on a pixel level. By solving this problem we would be able to interpret an OCT image completely and precisely without the help from a trained expert. It turns out that we can do much better. For simple structures we are able to reconstruct the ground-truth of an OCT image more than 98% correctly, and for more complicated structures (e.g., a multi-layered brain structure) we are looking at 93%. We achieved this through extensive uses of Machine Learning. The success of the Monte Carlo simulation already puts us in a great position by providing us with a great deal of data (effectively unlimited), in the form of (image, truth) pairs. Through a transformation of the high-dimensional response variable, we convert the learning task into a multi-output multi-class classification problem and a multi-output regression problem. We then build a hierarchy architecture of machine learning models (committee of experts) and train different parts of the architecture with specifically designed data sets. In prediction, an unseen OCT image first goes through a classification model to determine its structure (e.g., the number and the types of layers present in the image); then the image is handed to a regression model that is trained specifically for that particular structure to predict the length of the different layers and by doing so reconstruct the ground-truth of the image. We also demonstrate that ideas from Deep Learning can be useful to further improve the performance.

It is worth pointing out that solving the inverse problem automatically improves the imaging depth, since previously the lower half of an OCT image (i.e., greater depth) can be hardly seen but now becomes fully resolved. Interestingly, although OCT signals consisting the lower half of the image are weak, messy, and uninterpretable to human eyes, they still carry enough information which when fed into a well-trained machine learning model spits out precisely the true structure of the object being imaged. This is just another case where Artificial Intelligence (AI) outperforms human. To the best knowledge of the author, this thesis is not only a success but also the first attempt to reconstruct an OCT image at a pixel level. To even give a try on this kind of task, it would require fully annotated OCT images and a lot of them (hundreds or even thousands). This is clearly impossible without a powerful simulation tool like the one developed in this thesis.

Inelastic K+p reactions at incident momenta from 1.37 GeV/c to 2.17 GeV/c

A number of recent experiments have suggested the possibility of a highly inelastic resonance in K⁺p scattering. To study the inelastic K⁺p reactions, a 400 K exposure has been taken at the L.R.L. 25 inch bubble chamber. The data are spread over seven K⁺ momenta between 1.37 and 2.17 GeV/c.

Cross-sections have been measured for the reaction K⁺p → pK°π+ which is dominated by the quasi-two body channels K∆ and K*N. Both these channels are strongly peripheral, as at other momenta. The decay of the ∆ is in good agreement with the predictions of the rho-photon analogy of Stodolsky and Sakurai. The data on the K*p channel show evidence of both pseudo scalar and vector exchange.

Cross-sections for the final state pK⁺π+π- shows a strong contribution from the quasi-two body channel K*∆. This reaction is also very peripheral even at threshold. The decay angular distributions indicate the reaction is dominated as at higher momenta by a pion exchange mechanism. The data are also in good agreement with the quark model predictions of Bialas and Zalewski for the K* and ∆ decay.

Photodisintegration of helium-3 at energies between 200 and 600 MEV

We have measured differential cross-sections for the two-body photodisintegration of Helium-3, ɣ + He³ → p + d, between incident photon energies of 200 and 600 MeV, and for center of mass frame angles between 30° and 150°. Both final state particles were detected in arrays of wire spark chambers and scintillation counters; the high momentum particle was analyzed in a magnet spectrometer. The results are interpreted in terms of amplitudes to produce the ∆(1236) resonance in an intermediate state, as well as non-resonant amplitudes. This experiment, together with an (unfinished) experiment on the inverse reaction, p + d → He³ + ɣ, will provide a reciprocity test of time reversal invariance.

Nonlinear response and optical limiting in SrBi2Ta2O9 thin films

SrBi2Ta2O9 (SBT) thin films on quartz substrates were prepared by use of the pulsed-laser deposition technique. The nonlinear refractive indices, n(2), Of the SBT films were measured by use of z-scan techniques with picosecond pulses. Large negative nonlinear refractive indices of 3.84 and 3.58 cm(2)/GW were obtained for the wavelengths 532 nm and 1.064 mum, respectively. The two-photon absorption coefficient was determined to be 7.3 cm/GW for 532 nm. The limiting behavior of SBT thin film on a quartz substrate was investigated in an f/5 defocusing geometry by use of 38-ps-duration, 532-nm, 1.064-mum. laser excitation. (C) 2001 Optical Society of America.

两种新型芴类衍生物的三光子吸收特性研究

研究了两种新型芴类衍生物9，9-二(2-乙基已基)-2，7-二咔唑-9H-芴(简记为DCZF)和9，9-二(2-乙基已基)-2，7-二(2-(4-甲氧基)苯-2，1-乙烯基)芴(简记为BMOSF)在N，N-二甲基甲酰胺(DMF)中的线性吸收和单光子荧光行为，并用脉冲宽度为38ps，重复频率为10Hz的1064 nm Nd：YAG脉冲激光研究了两种化合物的三光子吸收性质．结果表明：两种新材料的最大线性吸收峰分别位于330和380nm，吸收区域覆盖了270-420nm波段．两种化合物的荧光带位于蓝-紫区，中心

一种新型芴类衍生物的光谱性质研究

合成了具有大π共轭性的对称型芴类衍生物9，9-二（2-乙基已基）-2，7-（2-（4-甲氧基）苯-2，1-乙烯基）芴（简写为MO-F1u—MO）。通过元素分析、质谱、紫外-可见光谱和红外光谱对其进行了表征。测试了该染料在乙腈、二氯甲烷、四氢呋喃和正己烷4种不同极性溶剂中的线性吸收光谱和单光子荧光谱。结果发现溶剂效应对吸收光谱和荧光光谱表现出不同程度的影响，对产生这些光谱行为的主要原因进行了讨论。

两种三光子吸收染料光限幅性能的实验研究

研究了两种新型D-π-D结构的芴类衍生物4-{7-[4-（二甲基胺）苯基]-9，9-二（2-乙基己基）-9H-芴-2-}-N，N-二甲基苯胺[缩写为B（DMAP）F]和4-{2-[7-（4-氨基苯乙烯基）-9，9-二（2-乙基己基）-9H-芴-2-]乙烯基}苯胺（缩写为BASF）在四氢呋喃（THF）和N，N-二甲基甲酰胺（DMF）中的线性吸收和单光子荧光行为，用脉冲宽度为38ps，重复频率为10Hz的1064nmNd；YAG脉冲激光研究了两种化合物的三光子吸收性质，结果表明：受溶剂效应的影响，两种化合物在

Optical properties and structure of Sb-rich AgInSbTe phase change thin films

A new composition content quaternary-alloy-based phase change thin film, Sb-rich AgInSbTe, has been prepared by DC-magnetron sputtering on a K9 glass substrate. After the film has been subsequently annealed at 200degreesC for 30 min, it becomes a crystalline thin film. The diffraction peak of antimony (Sb) are observed by shallow (0.5 degree) x-ray diffraction in the quaternary alloy thin film. The analyses of the measurement from differential scanning calorimetry (DSC) show that the crystallization temperature of the phase change thin film is about 190degreesC and increases with the heating rate. By Kissinger plot, the activation energy for crystallization is determined to be 3.05eV. The reflectivity, refractive index and extinction coefficient of the crystalline and amorphous phase change thin films are presented. The optical absorption coefficient of the phase change thin films as a function of photon energy is obtained from the extinction coefficient. The optical band gaps of the amorphous and crystallization phase change thin films are 0.265eV and 1.127eV, respectively.

一种新的芴类衍生物的三光子吸收诱导荧光和光限幅效应研究

通过对新合成的芴的一种具有对称性衍生物4-2-（7-（4-氨基苯乙烯基）-9，9-二（2-乙基己基）-9H-芴-2-）乙烯基）苯胺（BASF）的DMF溶液的研究，发现其具有很强三光子吸收频率上转换荧光发射特性，实验测出上转换荧光的波长范围是456-775nm，在510nm处的荧光强度与入射光强的三次方成正比．在0．03mol／L的浓度下就有明显的三光子吸收诱导的光限幅效应．非线性吸收系数和吸收截面分别为y=4．34×10^20 cm^3／W^2和σ3=2．4×10^-39 cm^6／W^2．

激光二极管阵列的窄线宽、可调谐输出

外腔反馈的激光二极管阵列(LDA)可获得窄线宽、可调谐的光谱输出。外腔由快轴准直镜、准直光学系统和闪耀光栅组成。由于阵列中各发光单元的排列弯曲导致不同波长的光原路返回,引起谱线展宽,在输出光路中加入光谱滤波器,使激光二极管阵列的线宽进一步窄化。这样,激光二极管阵列的输出光谱由自由运转时的2 nm压缩到0.12 nm,在恒定温度23 ℃时,实现了激光在806～818 nm的调谐,调谐范围达12 nm。