Glaze visualization framework for mobile devices

Supervisor: Ian Oakley

Electrical properties of polymer/metal interface in polymer light-emitting devices: electron injection barrier suppression

The electrical characterization of a high efficient multilayer polymer light emitting diode using poly[(2-methoxy-5-hexyloxy)-p-phenylenevinylene] as the emissive layer and an anionic fluorinated surfactant as the electron transport layer was performed. For the sake of comparison, a conventional single layer device was fabricated. The density current vs. voltage measurements revealed that the conventional device has a higher threshold voltage and lower current compared to the surfactant modified device. The effective barrier height for electron injection was suppressed. The influence of the interfaces and bulk contributions to the dc and high frequencies conductivities of the devices was also discussed. (c) 2006 Springer Science + Business Media, Inc.

Effect of ion concentration of ionomer in electron injection layer of polymer light-emitting devices

Polymer light-emitting devices (PLEDs) with poly(2-methoxy-5-hexyloxy)-p-phenylenevinylene (OC1OC6-PPV) as the emissive layer were studied with an electron injection layer of ionomers consisting of copolymers of styrene and methylmethacrylate (PS/PMMA) with 3, 6 and 8 mol% degree of sulfonation. The ionomers were able to form very thin films over the emissive layer, with less than 30 nm. Additionally, the presence of ion pairs of ionomer suppresses the tendency toward dewetting of the thin film of ionomer (similar to 10 nm) which can cause malfunction of the device. The effect of the ionomers was investigated as a function of the ion content. The devices performance, characterized by their current density and luminance intensity versus voltage, showed a remarkable increase with the ionomer layer up to 6 mol% of ionic groups, decreasing after that for the 8 mol% ionomer device. The study of the impedance spectroscopy in the frequency range from 0.1 to 10(6) Hz showed that the injection phenomena dominate over the transport in the electroluminescent polymer bulk. (c) 2006 Elsevier B.V. All rights reserved.

Polymer light emitting devices with Langmuir-Blodgett (LB) films: Enhanced performance due to an electron-injecting layer of ionomers

Polymer light-emitting devices (PLEDs) have been produced with Langmuir-Blodgett (LB) films from poly(2-methoxy-5-hexyloxy)-p-phenylenevinylene (OC1OC6-PPV) as the emissive layer and an ionomer of a copolymer of styrene and methylmethacrylate (PS/PMMA) as an electron-injection layer. The main features of such devices are the low operating voltages, obtainable firstly due to the good quality of the ultrathin LB films that allows PLEDs to be produced reproducibly and secondly due to the improved electrical and luminance properties brought by the electron-injection layer. Also demonstrated is the superior performance of an all-LB device compared to another one produced with cast films of the same materials. Published by Elsevier B.V.

Electrical characterization of poly(amide-imide) for application in organic field effect devices

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Determining the interfacial density of states in metal-insulator-semiconductor devices based on poly(3-hexylthiophene)

Low frequency admittance measurements are used to determine the density of interface states in metal-insulator-semiconductor diodes based on the unintentionally doped, p-type semiconductor poly(3-hexylthiophene). After vacuum annealing at 90 degrees C, interface hole trapping states are shown to be distributed in energy with their density decreasing approximately linearly from similar to 20x10(10) to 5x10(10) cm(-2) eV(-1) over an energy range extending from 0.05 to 0.25 eV above the bulk Fermi level. (c) 2008 American Institute of Physics.

Magnetic field effects on the conductivity of organic bipolar and unipolar devices at room temperature

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Modeling of optoelectronic devices through neuro-fuzzy architectures

The advantages offered by the electronic component LED (Light Emitting Diode) have caused a quick and wide application of this device in replacement of incandescent lights. However, in its combined application, the relationship between the design variables and the desired effect or result is very complex and it becomes difficult to model by conventional techniques. This work consists of the development of a technique, through comparative analysis of neuro-fuzzy architectures, to make possible to obtain the luminous intensity values of brake lights using LEDs from design data.

Effects of hearing protector devices on speech intelligibility

The purpose of this study was to determine the influence of hearing protection devices (HPDs) on the understanding of speech in young adults with normal hearing, both in a silent situation and in the presence of ambient noise. The experimental research was carried out with the following variables: five different conditions of HPD use (without protectors, with two earplugs and with two earmuffs); a type of noise (pink noise); 4 test levels (60, 70, 80 and 90 dB[A]); 6 signal/noise ratios (without noise, + 5, + 10, zero, - 5 and - 10 dB); 5 repetitions for each case, totalling 600 tests with 10 monosyllables in each one. The variable measure was the percentage of correctly heard words (monosyllabic) in the test. The results revealed that, at the lowest levels (60 and 70 dB), the protectors reduced the intelligibility of speech (compared to the tests without protectors) while, in the presence of ambient noise levels of 80 and 90 dB and unfavourable signal/noise ratios (0, -5 and -10 dB), the HPDs improved the intelligibility. A comparison of the effectiveness of earplugs versus earmuffs showed that the former offer greater efficiency in respect to the recognition of speech, providing a 30% improvement over situations in which no protection is used. As might be expected, this study confirmed that the protectors' influence on speech intelligibility is related directly to the spectral curve of the protector's attenuation. (C) 2003 Elsevier B.V. Ltd. All rights reserved.

Comparative degradation of ZnO- and SnO(2)-based polycrystalline non-ohmic devices by current pulse stress

The degradation behaviour of SnO(2)-based varistors (SCNCr) due to current pulses (8/20 mu s) is reported here for the first time in comparison with the ZnO-based commercial varistors (ZnO). Puncturing and/or cracking failures were observed in ZnO-based varistors possessing inferior thermo-mechanical properties in comparison with that found in a SCNCr system free of failures. Both systems presented electric degradation related to the increase in the leakage current and decrease in the electric breakdown field, non-linear coefficient and average value of the potential barrier height. However, it was found that a more severe degradation occurred in the ZnO-based varistors concerning their non-ohmic behaviour, while in the SCNCr system, a strong non-ohmic behaviour remained after the degradation. These results indicate that the degradation in the metal oxide varistors is controlled by a defect diffusion process whose rate depends on the mobility, the concentration of meta-stable defects and the amount of electrically active interfaces. The improved behaviour of the SCNCr system is then inferred to be associated with the higher amount of electrically active interfaces (85%) and to a higher energy necessary to activate the diffusion of the specific defects.

Allocation of protective devices in distribution circuits using nonlinear programming models and genetic algorithms

The optimized allocation of protective devices in strategic points of the circuit improves the quality of the energy supply and the system reliability index. This paper presents a nonlinear integer programming (NLIP) model with binary variables, to deal with the problem of protective device allocation in the main feeder and all branches of an overhead distribution circuit, to improve the reliability index and to provide customers with service of high quality and reliability. The constraints considered in the problem take into account technical and economical limitations, such as coordination problems of serial protective devices, available equipment, the importance of the feeder and the circuit topology. The use of genetic algorithms (GAs) is proposed to solve this problem, using a binary representation that does (1) or does not (0) show allocation of protective devices (reclosers, sectionalizers and fuses) in predefined points of the circuit. Results are presented for a real circuit (134 busses), with the possibility of protective device allocation in 29 points. Also the ability of the algorithm in finding good solutions while improving significantly the indicators of reliability is shown. (C) 2003 Elsevier B.V. All rights reserved.